IRF IRHMS593Z60

PD-94666B
RADIATION HARDENED
POWER MOSFET
THRU-HOLE (Low-Ohmic TO-254AA)
IRHMS597Z60
30V, P-CHANNEL
5
TECHNOLOGY
™
Product Summary
Part Number Radiation Level
IRHMS597Z60 100K Rads (Si)
IRHMS593Z60 300K Rads (Si)
RDS(on)
0.014Ω
0.014Ω
ID
-45A*
-45A*
International Rectifier’s R5TM technology provides
high performance power MOSFETs for space
applications. These devices have been characterized
for Single Event Effects (SEE) with useful performance
up to an LET of 80 (MeV/(mg/cm2)). The combination
of low RDS(on) and low gate charge reduces the
power losses in switching applications such as DC
to DC converters and motor control. These devices
retain all of the well established advantages of
MOSFETs such as voltage control, fast switching,
ease of paralleling and temperature stability of
electrical parameters.
Low-Ohmic
TO-254AA
Features:
n
n
n
n
n
n
n
n
n
n
Low RDS(on)
Fast Switching
Single Event Effect (SEE) Hardened
Low Total Gate Charge
Simple Drive Requirements
Ease of Paralleling
Hermetically Sealed
Ceramic Eyelets
Electrically Isolated
Light Weight
Absolute Maximum Ratings
Pre-Irradiation
Parameter
ID @ V GS = -12V, TC = 25°C
ID @ VGS = -12V, TC = 100°C
IDM
PD @ TC = 25°C
VGS
EAS
IAR
EAR
dv/dt
TJ
T STG
Continuous Drain Current
Continuous Drain Current
Pulsed Drain Current À
Max. Power Dissipation
Linear Derating Factor
Gate-to-Source Voltage
Single Pulse Avalanche Energy Á
Avalanche Current À
Repetitive Avalanche Energy À
Peak Diode Recovery dv/dt Â
Operating Junction
Storage Temperature Range
Lead Temperature
Weight
Units
-45*
-45*
-180
208
1.67
±20
1250
-45
20.8
-0.6
-55 to 150
A
W
W/°C
V
mJ
A
mJ
V/ns
o
C
300 (0.063in./1.6mm from case for 10s)
9.3 ( Typical )
g
* Current is limited by package
For footnotes refer to the last page
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1
07/05/05
IRHMS597Z60
Pre-Irradiation
Electrical Characteristics @ Tj = 25°C (Unless Otherwise Specified)
Parameter
Min
Drain-to-Source Breakdown Voltage
-30
∆BVDSS /∆T J Temperature Coefficient of Breakdown —
Voltage
RDS(on)
Static Drain-to-Source On-State
—
Resistance
VGS(th)
Gate Threshold Voltage
-2.0
gfs
Forward Transconductance
39
IDSS
Zero Gate Voltage Drain Current
—
—
IGSS
IGSS
Qg
Q gs
Q gd
td(on)
tr
td(off)
tf
LS + LD
Gate-to-Source Leakage Forward
Gate-to-Source Leakage Reverse
Total Gate Charge
Gate-to-Source Charge
Gate-to-Drain (‘Miller’) Charge
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
Fall Time
Total Inductance
—
—
—
—
—
—
—
—
—
—
Typ Max Units
Test Conditions
—
—
V
-0.032
—
V/°C
—
0.014
Ω
VGS = -12V, ID = -45A Ã
—
—
—
—
-4.0
—
-10
-25
V
S( )
—
—
—
—
—
—
—
—
—
6.8
-100
100
160
60
65
35
150
100
80
—
nC
VDS = VGS, ID = -1.0mA
VDS = -15V, IDS = -45A Ã
VDS= -24V ,VGS=0V
VDS = -24V,
VGS = 0V, TJ = 125°C
VGS = -20V
VGS = 20V
VGS =-12V, ID = -45A
VDS = -15V
ns
VDD = -15V, ID = -45A
V GS =-12V, RG = 2.35Ω
Ω
BVDSS
µA
nA
VGS = 0V, ID = -1.0mA
Reference to 25°C, ID = -1.0mA
nH Measured from Drain lead (6mm /0.25in.
from package) to Source lead (6mm /0.25in.
from package) with Source wires internally
bonded from Source Pin to Drain Pad
Ciss
Coss
Crss
Rg
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Gate Resistance
—
—
—
—
7844
4508
564
2.1
—
—
—
—
pF
VGS = 0V, VDS = -25V
f = 1.0MHz
Ω
f = 1.0MHz, open drain
Source-Drain Diode Ratings and Characteristics
Parameter
Min Typ Max Units
IS
ISM
VSD
t rr
Q RR
Continuous Source Current (Body Diode)
Pulse Source Current (Body Diode) À
Diode Forward Voltage
Reverse Recovery Time
Reverse Recovery Charge
ton
Forward Turn-On Time
—
—
—
—
—
—
—
—
—
—
-45*
-180
-5.0
150
440
Test Conditions
A
V
ns
nC
Tj = 25°C, IS = -45A, VGS = 0V Ã
Tj = 25°C, IF =-45A, di/dt ≤ -100A/µs
VDD ≤ -25V Ã
Intrinsic turn-on time is negligible. Turn-on speed is substantially controlled by LS + LD.
* Current is limited by package
Thermal Resistance
Parameter
RthJC
RthCS
RthJA
Junction-to-Case
Case-to-Sink
Junction-to-Ambient
Min Typ Max Units
—
—
—
—
0.21
—
0.6
—
48
Test Conditions
°C/W
Typical socket mount
Note: Corresponding Spice and Saber models are available on International Rectifier Web site.
For footnotes refer to the last page
2
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Radiation Characteristics
Pre-Irradiation
IRHMS597Z60
International Rectifier Radiation Hardened MOSFETs are tested to verify their radiation hardness capability.
The hardness assurance program at International Rectifier is comprised of two radiation environments.
Every manufacturing lot is tested for total ionizing dose (per notes 5 and 6) using the TO-3 package. Both
pre- and post-irradiation performance are tested and specified using the same drive circuitry and test
conditions in order to provide a direct comparison.
Table 1. Electrical Characteristics @ Tj = 25°C, Post Total Dose Irradiation ÄÅ
Parameter
BVDSS
VGS(th)
IGSS
IGSS
IDSS
RDS(on)
RDS(on)
VSD
100K Rads(Si)1
Min Max
Drain-to-Source Breakdown Voltage
Gate Threshold Voltage
Gate-to-Source Leakage Forward
Gate-to-Source Leakage Reverse
Zero Gate Voltage Drain Current
Static Drain-to-Source Ã
On-State Resistance (TO-3)
Static Drain-to-Source On-State Ã
Resistance(Low-OhmicTO-254AA)
Diode Forward Voltage Ã
300KRads(Si)2
Min
Max
Units
Test Conditions
-30
-2.0
—
—
—
—
—
-4.0
-100
100
-10
0.014
-30
-2.0
—
—
—
—
—
-4.0
-100
100
-10
0.014
nA
µA
Ω
VGS = 0V, ID = -1.0mA
V GS = VDS, ID = -1.0mA
VGS =-20V
VGS = 20 V
VDS = -24V, VGS =0V
VGS = -12V, ID = -45A
—
0.014
—
0.014
Ω
VGS = -12V, ID = -45A
—
-5.0
—
-5.0
V
VGS = 0V, IS = -45A
V
1. Part number IRHMS597Z60
2. Part number IRHMS593Z60
International Rectifier radiation hardened MOSFETs have been characterized in heavy ion environment for
Single Event Effects (SEE). Single Event Effects characterization is illustrated in Fig. a and Table 2.
Table 2. Single Event Effect Safe Operating Area
Ion
VDS (V)
Range
(µm) @VGS=0V @VGS=5V @VGS=10V @VGS=15V @VGS=20V
36
- 30
- 30
- 30
- 30
- 30
31
- 30
- 30
- 30
- 30
- 25
27
- 30
- 30
- 30
- 25
—
Energy
(MeV)
278.5
320
332
VDS
Br
I
Au
LET
(MeV/(mg/cm2))
37.5
59.7
81.4
-35
-30
-25
-20
-15
-10
-5
0
Br
I
Au
0
5
10
15
20
VGS
Fig a. Single Event Effect, Safe Operating Area
For footnotes refer to the last page
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3
IRHMS597Z60
10000
10000
VGS
TOP
-15V
-12V
-10V
-9.0V
-8.0V
-7.0V
-6.0V
BOTTOM -5.0V
1000
100
-5.0V
10
60µs PULSE WIDTH
Tj = 25°C
1000
100
-5.0V
10
60µs PULSE WIDTH
Tj = 150°C
1
1
0.1
1
10
0.1
100
1
10
100
-VDS , Drain-to-Source Voltage (V)
-VDS , Drain-to-Source Voltage (V)
Fig 2. Typical Output Characteristics
Fig 1. Typical Output Characteristics
1000
RDS(on) , Drain-to-Source On Resistance
(Normalized)
-I D, Drain-to-Source Current (A)
1.5
T J = 150°C
100
T J = 25°C
VDS = -20V
15 WIDTH
60µs PULSE
10
ID = -45A
1.0
VGS = -12V
0.5
5
5.5
6
6.5
7
-VGS, Gate-to-Source Voltage (V)
Fig 3. Typical Transfer Characteristics
4
VGS
-15V
-12V
-10V
-9.0V
-8.0V
-7.0V
-6.0V
BOTTOM -5.0V
TOP
-I D, Drain-to-Source Current (A)
-I D, Drain-to-Source Current (A)
Pre-Irradiation
-60 -40 -20
0
20
40
60
80 100 120 140 160
TJ , Junction Temperature (°C)
Fig 4. Normalized On-Resistance
Vs. Temperature
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Pre-Irradiation
14000
20
-VGS, Gate-to-Source Voltage (V)
VGS = 0V,
f = 1 MHz
C iss = C gs + C gd, C ds SHORTED
C rss = C gd
12000
C, Capacitance (pF)
IRHMS597Z60
C oss = C ds + C gd
10000
Ciss
8000
Coss
6000
4000
2000
16
12
8
4
FOR TEST CIRCUIT
SEE FIGURE 13
Crss
0
0
1
10
100
0
20
40
60
80 100 120 140 160 180
QG, Total Gate Charge (nC)
-VDS, Drain-to-Source Voltage (V)
Fig 6. Typical Gate Charge Vs.
Gate-to-Source Voltage
Fig 5. Typical Capacitance Vs.
Drain-to-Source Voltage
1000
1000
-I D, Drain-to-Source Current (A)
-I SD , Reverse Drain Current (A)
VDS= -24V
VDS= -15V
ID = -45A
T J = 150°C
100
TJ = 25°C
10
OPERATION IN THIS AREA
LIMITED BY R DS(on)
1ms
VGS = 0V
10
1
0
1
2
3
-V SD , Source-to-Drain Voltage (V)
Fig 7. Typical Source-Drain Diode
Forward Voltage
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4
100µs
100
Tc = 25°C
Tj = 150°C
Single Pulse
1
10ms
10
100
-VDS , Drain-to-Source Voltage (V)
Fig 8. Maximum Safe Operating Area
5
IRHMS597Z60
Pre-Irradiation
120
V GS
100
-ID , Drain Current (A)
RD
V DS
LIMITED BY PACKAGE
D.U.T.
RG
-
+
80
V DD
V GS
Pulse Width ≤ 1 µs
Duty Factor ≤ 0.1 %
60
40
Fig 10a. Switching Time Test Circuit
20
td(on)
tr
t d(off)
tf
VGS
0
10%
25
50
75
100
125
150
TC , Case Temperature ( ° C)
90%
Fig 9. Maximum Drain Current Vs.
Case Temperature
VDS
Fig 10b. Switching Time Waveforms
1
Thermal Response ( Z thJC )
D = 0.50
0.20
0.1
0.10
0.05
0.02
0.01
0.01
P DM
t1
SINGLE PULSE
( THERMAL RESPONSE )
t2
0.001
Notes:
1. Duty Factor D = t1/t2
2. Peak Tj = P dm x Zthjc + Tc
0.0001
1E-006
1E-005
0.0001
0.001
0.01
0.1
1
t1 , Rectangular Pulse Duration (sec)
Fig 11. Maximum Effective Transient Thermal Impedance, Junction-to-Case
6
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Pre-Irradiation
IRHMS597Z60
-
D.U.T
RG
VGS
-20V
+
IAS
tp
VVDD
DD
DRIVER
A
0.01Ω
15V
Fig 12a. Unclamped Inductive Test Circuit
I AS
EAS, Single Pulse Avalanche Energy (mJ)
L
VDS
3500
ID
-20A
-28.5A
BOTTOM -45A
TOP
3000
2500
2000
1500
1000
500
0
25
50
75
100
125
°
Starting TJ , Junction Temperature (°C)
150
Fig 12c. Maximum Avalanche Energy
Vs. Drain Current
tp
V(BR)DSS
Fig 12b. Unclamped Inductive Waveforms
Current Regulator
Same Type as D.U.T.
QG
-12 V
QGS
50KΩ
-12V
12V
.2µF
.3µF
QGD
D.U.T.
+VDS
VGS
VG
-3mA
Charge
Fig 13a. Basic Gate Charge Waveform
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IG
ID
Current Sampling Resistors
Fig 13b. Gate Charge Test Circuit
7
IRHMS597Z60
Pre-Irradiation
Footnotes:
à Pulse width ≤ 300 µs; Duty Cycle ≤ 2%
Ä Total Dose Irradiation with VGS Bias.
À Repetitive Rating; Pulse width limited by
maximum junction temperature.
Á VDD = -25V, starting TJ = 25°C, L =1.1mH
Peak IL = -45A, VGS = -12V
 ISD ≤ -45A, di/dt ≤ -184A/µs,
VDD ≤ -30V, TJ ≤ 150°C
-12 volt VGS applied and VDS = 0 during
irradiation per MIL-STD-750, method 1019, condition A.
Å Total Dose Irradiation with VDS Bias.
-24 volt VDS applied and VGS = 0 during
irradiation per MlL-STD-750, method 1019, condition A.
Case Outline and Dimensions — Low-Ohmic TO-254AA
0.12 [.005]
13.84 [.545]
13.59 [.535]
3.78 [.149]
3.53 [.139]
6.60 [.260]
6.32 [.249]
A
20.32 [.800]
20.07 [.790]
17.40 [.685]
16.89 [.665]
1
C
2
2X
B
3
14.48 [.570]
12.95 [.510]
3X
3.81 [.150]
13.84 [.545]
13.59 [.535]
1.27 [.050]
1.02 [.040]
0.84 [.033]
MAX.
1.14 [.045]
0.89 [.035]
0.36 [.014]
3.81 [.150]
B A
NOT ES :
1.
2.
3.
4.
DIMENSIONING & TOLERANCING PER ASME Y14.5M-1994.
ALL DIMENSIONS ARE SHOWN IN MILLIMETERS [INCHES].
CONTROLLING DIMENSION: INCH.
CONFORMS TO JEDEC OUTLINE TO-254AA.
PIN ASSIGNMENTS
1 = DRAIN
2 = SOURCE
3 = GATE
CAUTION
BERYLLIA WARNING PER MIL-PRF-19500
Package containing beryllia shall not be ground, sandblasted, machined, or have other operations performed on them
which will produce beryllia or beryllium dust. Furthermore, beryllium oxide packages shall not be placed in acids that
will produce fumes containing beryllium.
IR WORLD HEADQUARTERS: 233 Kansas St., El Segundo, California 90245, USA Tel: (310) 252-7105
IR LEOMINSTER : 205 Crawford St., Leominster, Massachusetts 01453, USA Tel: (978) 534-5776
TAC Fax: (310) 252-7903
Visit us at www.irf.com for sales contact information.
Data and specifications subject to change without notice. 07/2005
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