PD - 94823 IRFZ44RPbF Advanced Process Technology l Ultra Low On-Resistance l Dynamic dv/dt Rating l 175°C Operating Temperature l Fast Switching l Fully Avalanche Rated l Drop in Replacement of the IRFZ44 for Linear/Audio Applications l Lead-Free Description HEXFET® Power MOSFET l D VDSS = 60V RDS(on) = 0.028Ω G ID = 50*A S Advanced HEXFET® Power MOSFETs from International Rectifier utilize advanced processing techniques to achieve extremely low on-resistance per silicon area. This benefit, combined with the fast switching speed and ruggedized device design that HEXFET power MOSFETs are well known for, provides the designer with an extremely efficient and reliable device for use in a wide variety of applications. The TO-220 package is universally preferred for all commercialindustrial applications at power dissipation levels to approximately 50 watts. The low thermal resistance and low package cost of the TO-220 contribute to its wide acceptance throughout the industry. TO-220AB Absolute Maximum Ratings Parameter ID @ TC = 25°C ID @ TC = 100°C IDM PD @TC = 25°C VGS EAS dv/dt TJ TSTG Continuous Drain Current, VGS @ 10V Continuous Drain Current, VGS @ 10V Pulsed Drain Current Power Dissipation Linear Derating Factor Gate-to-Source Voltage Single Pulse Avalanche Energy Peak Diode Recovery dv/dt Operating Junction and Storage Temperature Range Soldering Temperature, for 10 seconds Mounting Torque, 6-32 or M3 screw Max. Units 50* 36 200 150 1.0 ±20 100 4.5 -55 to + 175 A W W/°C V mJ V/ns °C 300 (1.6mm from case ) 10 lbf•in (1.1 N•m) Thermal Resistance Parameter RθJC RθCS RθJA www.irf.com Junction-to-Case Case-to-Sink, Flat, Greased Surface Junction-to-Ambient Typ. Max. Units ––– 0.50 ––– 1.0 ––– 62 °C/W 1 11/10/03 IRFZ44RPbF Electrical Characteristics @ TJ = 25°C (unless otherwise specified) RDS(on) VGS(th) gfs Parameter Drain-to-Source Breakdown Voltage Breakdown Voltage Temp. Coefficient Static Drain-to-Source On-Resistance Gate Threshold Voltage Forward Transconductance Qg Qgs Qgd td(on) tr td(off) tf Gate-to-Source Forward Leakage Gate-to-Source Reverse Leakage Total Gate Charge Gate-to-Source Charge Gate-to-Drain ("Miller") Charge Turn-On Delay Time Rise Time Turn-Off Delay Time Fall Time Min. 60 ––– ––– 2.0 15 ––– ––– ––– ––– ––– ––– ––– ––– ––– ––– ––– Typ. ––– 0.060 ––– ––– ––– ––– ––– ––– ––– ––– ––– ––– 14 110 45 92 IDSS Drain-to-Source Leakage Current LD Internal Drain Inductance ––– 4.5 LS Internal Source Inductance ––– 7.5 Ciss Coss Crss Input Capacitance Output Capacitance Reverse Transfer Capacitance ––– ––– ––– 1900 920 170 V(BR)DSS ∆V(BR)DSS/∆TJ IGSS Max. Units Conditions ––– V VGS = 0V, ID = 250µA ––– V/°C Reference to 25°C, ID = 1mA 0.028 Ω VGS = 10V, ID = 31A 4.0 V VDS = VGS, ID = 250µA ––– S VDS = 25V, ID = 31A 25 VDS = 60V, VGS = 0V µA 250 VDS = 48V, VGS = 0V, TJ = 150°C 100 VGS = 20V nA -100 VGS = -20V 67 ID = 51A 18 nC VDS = 48V 25 VGS = 10V, See Fig. 6 and 13 ––– VDD = 30V ––– ID = 51A ns ––– RG = 9.1Ω ––– RD = 0.55Ω, See Fig. 10 Between lead, ––– 6mm (0.25in.) nH G from package ––– and center of die contact ––– VGS = 0V ––– VDS = 25V ––– pF ƒ = 1.0MHz, See Fig. 5 D S Source-Drain Ratings and Characteristics IS ISM VSD trr Qrr ton Parameter Continuous Source Current (Body Diode) Pulsed Source Current (Body Diode) Diode Forward Voltage Reverse Recovery Time Reverse Recovery Charge Forward Turn-On Time Min. Typ. Max. Units Conditions D MOSFET symbol ––– ––– 50* showing the A G integral reverse ––– ––– 200 S p-n junction diode. ––– ––– 2.5 V TJ = 25°C, IS = 51A, VGS = 0V ––– 120 180 ns TJ = 25°C, IF = 51A ––– 0.53 0.80 µC di/dt = 100A/µs Intrinsic turn-on time is negligible (turn-on is dominated by LS+LD) Notes: Repetitive rating; pulse width limited by ISD ≤ 51A, di/dt ≤ 250A/µs, VDD ≤ V(BR)DSS, VDD = 25V, Starting TJ = 25°C, L = 44µH Pulse width ≤ 300µs; duty cycle ≤ 2%. max. junction temperature. ( See fig. 11 ) TJ ≤ 175°C RG = 25Ω, IAS = 51A. (See Figure 12) * Current limited by the package, (Die Current = 51A) 2 www.irf.com IRFZ44RPbF Fig 2. Typical Output Characteristics RDS(on) , Drain-to-Source On Resistance (Normalized) Fig 1. Typical Output Characteristics 2.5 ID = 51A 2.0 1.5 1.0 0.5 0.0 -60 -40 -20 0 VGS = 10V 20 40 60 80 100 120 140 160 180 TJ , Junction Temperature ( ° C) Fig 3. Typical Transfer Characteristics www.irf.com Fig 4. Normalized On-Resistance Vs. Temperature 3 IRFZ44RPbF Fig 5. Typical Capacitance Vs. Drain-to-Source Voltage Fig 6. Typical Gate Charge Vs. Gate-to-Source Voltage 1000 ID , Drain Current (A) OPERATION IN THIS AREA LIMITED BY RDS(on) 100 100us 1ms 10 1 10ms TC = 25 °C TJ = 175 °C Single Pulse 1 10 100 1000 VDS , Drain-to-Source Voltage (V) Fig 7. Typical Source-Drain Diode Forward Voltage 4 Fig 8. Maximum Safe Operating Area www.irf.com IRFZ44RPbF V DS 60 LIMITED BY PACKAGE VGS ID , Drain Current (A) 50 RD D.U.T. RG + V DD - 40 10V Pulse Width ≤ 1 µs Duty Factor ≤ 0.1 % 30 Fig 10a. Switching Time Test Circuit 20 VDS 90% 10 0 25 50 75 100 125 150 TC , Case Temperature ( ° C) 175 10% VGS td(on) Fig 9. Maximum Drain Current Vs. Case Temperature tr t d(off) tf Fig 10b. Switching Time Waveforms Thermal Response(Z thJC ) 10 1 D = 0.50 0.20 0.1 PDM 0.10 t1 0.05 0.02 0.01 0.01 0.00001 t2 Notes: 1. Duty factor D = t 1 / t 2 2. Peak TJ = P DM x Z thJC + TC SINGLE PULSE (THERMAL RESPONSE) 0.0001 0.001 0.01 0.1 1 10 t1 , Rectangular Pulse Duration (sec) Fig 11. Maximum Effective Transient Thermal Impedance, Junction-to-Case www.irf.com 5 15V L VDS DRIVER D.U.T RG + - VDD IAS 20V 0.01Ω tp Fig 12a. Unclamped Inductive Test Circuit V(BR)DSS tp A EAS , Single Pulse Avalanche Energy (mJ) IRFZ44RPbF 250 ID 21A 36A BOTTOM 51A TOP 200 150 100 50 0 25 50 75 100 125 150 175 Starting T J, Junction Temperature ( ° C) Fig 12c. Maximum Avalanche Energy Vs. Drain Current I AS Fig 12b. Unclamped Inductive Waveforms Current Regulator Same Type as D.U.T. 50KΩ QG 12V .2µF .3µF 10 V QGS D.U.T. QGD + V - DS VGS VG 3mA Charge Fig 13a. Basic Gate Charge Waveform 6 IG ID Current Sampling Resistors Fig 13b. Gate Charge Test Circuit www.irf.com IRFZ44RPbF Peak Diode Recovery dv/dt Test Circuit + D.U.T Circuit Layout Considerations • Low Stray Inductance • Ground Plane • Low Leakage Inductance Current Transformer + - - + RG • • • • Driver Gate Drive P.W. + dv/dt controlled by RG Driver same type as D.U.T. ISD controlled by Duty Factor "D" D.U.T. - Device Under Test Period D= - VDD P.W. Period VGS=10V * D.U.T. ISD Waveform Reverse Recovery Current Body Diode Forward Current di/dt D.U.T. VDS Waveform Diode Recovery dv/dt Re-Applied Voltage Body Diode VDD Forward Drop Inductor Curent Ripple ≤ 5% ISD * VGS = 5V for Logic Level Devices Fig 14. For N-Channel HEXFETS www.irf.com 7 IRFZ44RPbF TO-220AB Package Outline Dimensions are shown in millimeters (inches) 10.54 (.415) 10.29 (.405) 2.87 (.113) 2.62 (.103) -B- 3.78 (.149) 3.54 (.139) 4.69 (.185) 4.20 (.165) -A- 1.32 (.052) 1.22 (.048) 6.47 (.255) 6.10 (.240) 4 15.24 (.600) 14.84 (.584) LEAD ASSIGNMENTS 1.15 (.045) MIN 1 2 3 4- DRAIN 14.09 (.555) 13.47 (.530) 4- COLLECTOR 4.06 (.160) 3.55 (.140) 3X 3X LEAD ASSIGNMENTS IGBTs, CoPACK 1 - GATE 2 - DRAIN 1- GATE 1- GATE 3 - SOURCE 2- COLLECTOR 2- DRAIN 3- SOURCE 3- EMITTER 4 - DRAIN HEXFET 1.40 (.055) 1.15 (.045) 0.93 (.037) 0.69 (.027) 0.36 (.014) 3X M B A M 0.55 (.022) 0.46 (.018) 2.92 (.115) 2.64 (.104) 2.54 (.100) 2X NOTES: 1 DIMENSIONING & TOLERANCING PER ANSI Y14.5M, 1982. 2 CONTROLLING DIMENSION : INCH 3 OUTLINE CONFORMS TO JEDEC OUTLINE TO-220AB. 4 HEATSINK & LEAD MEASUREMENTS DO NOT INCLUDE BURRS. TO-220AB Part Marking Information E XAMPL E : T HIS IS AN IR F 1010 LOT CODE 1789 AS S E MB L E D ON WW 19, 1997 IN T H E AS S E MB L Y LINE "C" Note: "P" in assembly line position indicates "Lead-Free" INT E R NAT IONAL R E CT IF IE R L OGO AS S E MB L Y L OT CODE PAR T NU MB E R DAT E CODE YE AR 7 = 1997 WE E K 19 L INE C Data and specifications subject to change without notice. IR WORLD HEADQUARTERS: 233 Kansas St., El Segundo, California 90245, USA Tel: (310) 252-7105 TAC Fax: (310) 252-7903 Visit us at www.irf.com for sales contact information.11/03 8 www.irf.com