I27124 rev. D 02/03 5/ 20MT120UF "FULL-BRIDGE" IGBT MTP UltraFast NPT IGBT Features • UltraFast Non Punch Through (NPT) Technology • Positive VCE(ON)Temperature Coefficient • 10µs Short Circuit Capability • HEXFRED TM Antiparallel Diodes with UltraSoft Reverse Recovery • Low Diode VF • Square RBSOA • Aluminum Nitride DBC • Very Low Stray Inductance Design for High Speed Operation • UL approved (File E78996) VCES = 1200V IC = 40A T C = 25°C Benefits • Optimized for Welding, UPS and SMPS Applications • Rugged with UltraFast Performance • Benchmark Efficiency above 20KHz • Outstanding ZVS and Hard Switching Operation • Low EMI, requires Less Snubbing • Excellent Current Sharing in Parallel Operation • Direct Mounting to Heatsink • PCB Solderable Terminals • Very Low Junction-to-Case Thermal Resistance MMTP Absolute Maximum Ratings Parameters VCES Collector-to-Emitter Breakdown Voltage I Continuos Collector Current C I CM Pulsed Collector Current I LM Clamped Inductive Load Current I F Diode Continuous Forward Current FM Diode Maximum Forward Current I Max Units 1200 V @ TC = 25°C 40 A @ TC = 106°C 20 100 100 @ TC = 106°C 25 100 VGE Gate-to-Emitter Voltage ± 20 VISOL RMS Isolation Voltage, Any Terminal to Case, t = 1 min 2500 PD Maximum Power Dissipation (only IGBT) www.irf.com @ TC = 25°C 240 @ TC = 100°C 96 V W 1 20MT120UF I27124 rev. D 02/03 Electrical Characteristics @ TJ = 25°C (unless otherwise specified) Parameters V(BR)CES ∆V(BR)CES/ ∆T J VCE(ON) Min Typ Max Units Test Conditions Collector-to-Emitter Breakdown Voltage 1200 Temperature Coeff. of Breakdown Voltage Collector-to-Emitter Saturation Voltage VGE(th) Gate Threshold Voltage ∆VGE(th) / Temperature Coeff. of ∆T J Threshold Voltage g fe I CES 3.29 4.42 3.87 5.32 3.99 4 3.59 4.66 4.11 5.70 4.27 6 -14 Transconductance Zero Gate Voltage Collector Current (1) 17.5 0.7 2.9 I GES V V/°C +1.3 Gate-to-Emitter Leakage Current 250 3.0 9.0 ±250 VGE = 0V, I C = 250µA VGE = 0V, I C = 3mA (25-125°C) V VGE VGE VGE VGE VGE V VCE mV/°C VCE S µA mA nA VCE VGE VGE VGE VGE = = = = = = = 15V, I C = 20A 15V, I C = 40A 15V, I C = 20A T J = 125°C 15V, I C = 40A T J = 125°C 15V, I C = 20A T J = 150°C VGE, I C = 250µA VGE, I C = 3mA (25-125°C) = = = = = 50V, IC = 20A, PW = 0V, V CE = 1200V, TJ 0V, V CE = 1200V, TJ 0V, V CE = 1200V, TJ ± 20V 80µs = 25°C = 125°C = 150°C (1) I CES includes also opposite leg overall leakage Switching Characteristics @ TJ = 25°C (unless otherwise specified) Parameters Min Typ Max Units Test Conditions Qg Qge Qgc Eon Eoff Etot Total Gate Charge (turn-on) Gate-Emitter Charge (turn-on) Gate-Collector Charge (turn-on) Turn-On Switching Loss Turn-Off Switching Loss Total Switching Loss 176 19 89 513 402 915 264 30 134 770 603 1373 nC Eon Eoff Etot Turn-On Switching Loss Turn-Off Switching Loss Total Switching Loss 930 610 1540 1395 915 2310 µJ Cies Coes Cres RBSOA Input Capacitance Output Capacitance Reverse Transfer Capacitance Reverse Bias Safe Operating Area 2530 3790 344 516 78 117 full square pF SCSOA Short Circuit Safe Operating Area 2 10 µJ µs IC = 20A VCC = 600V VGE = 15V VCC = 600V, IC = 20A VGE = 15V, Rg = 5Ω, L = 200µH TJ = 25°C, Energy losses include tail and diode reverse recovery VCC = 600V, IC = 20A VGE = 15V, Rg = 5Ω, L = 200µH TJ = 125°C, Energy losses include tail and diode reverse recovery VGE = 0V VCC = 30V f = 1.0 MHz TJ = 150°C, IC = 120A VCC = 1000V, Vp = 1200V Rg = 5Ω, VGE = +15V to 0V TJ = 150°C VCC = 900V, Vp = 1200V Rg = 5Ω, VGE = +15V to 0V www.irf.com 20MT120UF I27124 rev. D 02/03 Diode Characteristics @ TJ = 25°C (unless otherwise specified) Parameters Min V FM Diode Forward Voltage Drop Erec trr Irr Reverse Recovery Energy of the Diode Diode Reverse Recovery Time Peak Reverse Recovery Current Typ Max Units Test Conditions 2.48 3.28 2.44 3.45 2.21 420 98 33 2.94 3.90 2.84 4.14 2.93 630 150 50 V I C = 20A I C = 40A I C = 20A, T J = 125°C I C = 40A, T J = 125°C I C = 20A, T J = 150°C VGE = 15V, Rg = 5Ω, L = 200µH VCC = 600V, IC = 20A T J = 125°C µJ ns A Thermal- Mechanical Specifications Parameters Min TJ Operating Junction Temperature Range TSTG Storage Temperature Range RthJC Junction-to-Case RthCS Case-to-Sink Typ Max Units - 40 150 °C - 40 125 IGBT 0.35 0.52 Diode 0.40 0.61 Module 0.06 °C/ W (Heatsink Compound Thermal Conductivity = 1 W/mK) Clearance ( external shortest distance in air 5.5 mm between two terminals) Creepage (shortest distance along external 8 surface of the insulating material between 2 terminals) T Mounting Torque Wt Weight (2) 3 ± 10% Nm 66 g (oz) (2) A mounting compound is recommended and the torque should be checked after 3 hours to allow for the spread of the compound. Lubricated threads www.irf.com 3 20MT120UF 50 250 40 200 30 150 Ptot (W) IC (A) I27124 rev. D 02/03 20 100 10 50 0 0 20 40 60 80 0 100 120 140 160 0 20 40 60 T C (°C) 80 100 120 140 160 TC (°C) Fig. 1 - Maximum DC Collector Current vs. Case Temperature Fig. 2 - Power Dissipation vs. Case Temperature 1000 1000 100 1 1ms IC (A) IC (A) 100 µs 10 DC 0.1 1 0.01 1 10 100 1000 VCE (V) Fig. 3 - Forward SOA TC = 25°C; TJ ≤ 150°C 4 100 10 µs 10 10000 10 100 1000 10000 VCE (V) Fig. 4 - Reverse Bias SOA TJ = 150°C; VGE =15V www.irf.com 20MT120UF I27124 rev. D 02/03 100 VGE VGE VGE VGE VGE = 15V = 12V = 10V = 8.0V VGE VGE VGE VGE VGE 80 60 ICE (A) ICE (A) 80 100 = 18V 40 20 = 18V = 15V = 12V = 10V = 8.0V 60 40 20 0 0 0 2 4 6 8 10 0 2 VCE (V) VGE VGE VGE VGE VGE 8 10 Fig. 6 - Typ. IGBT Output Characteristics TJ = 25°C; tp = 80µs 120 = 18V = 15V = 12V = 10V = 8.0V -40°C 25°C 125°C 100 80 60 IF (A) I CE (A) 80 6 VCE (V) Fig. 5 - Typ. IGBT Output Characteristics TJ = -40°C; tp = 80µs 100 4 60 40 40 20 20 0 0 0 2 4 6 8 VCE (V) Fig. 7 - Typ. IGBT Output Characteristics TJ = 125°C; tp = 80µs www.irf.com 10 0.0 1.0 2.0 3.0 4.0 5.0 VF (V) Fig. 8 - Typ. Diode Forward Characteristics tp = 80µs 5 20MT120UF I27124 rev. D 02/03 20 20 18 16 ICE = 40A ICE = 20A 16 ICE = 10A ICE = 20A 14 ICE = 10A 14 ICE = 40A 12 VCE (V) VCE (V) 18 10 8 12 10 8 6 6 4 4 2 2 0 0 5 10 15 5 20 10 Fig. 10 - Typical VCE vs. VGE TJ = 25°C Fig. 9 - Typical VCE vs. VGE TJ = -40°C 20 300 18 16 ICE = 10A ICE = 20A 14 ICE = 40A T J = 25°C 250 T J = 150°C 200 12 ICE (A) VCE (V) 20 VGE (V) VGE (V) 10 8 150 100 6 4 50 2 0 5 10 15 VGE (V) Fig. 11 - Typical VCE vs. VGE TJ = 125°C 6 15 20 0 0 5 10 15 20 VGE (V) Fig. 12 - Typ. Transfer Characteristics VCE = 50V; tp = 10µs www.irf.com 20MT120UF I27124 rev. D 02/03 2400 1000 2000 Energy (µJ) Swiching Time (ns) EON 1600 1200 EOFF 800 tdOFF tF 100 tdON 400 tR 0 10 0 10 20 30 40 0 50 10 20 IC (A) Fig. 13 - Typ. Energy Loss vs. IC TJ = 150°C; L=1.4mH; VCE= 400V RG= 5Ω; VGE= 15V 40 50 Fig. 14 - Typ. Switching Time vs. IC TJ = 150°C; L=1.4mH; VCE= 400V RG= 100Ω; VGE= 15V 2000 1000 1600 EON tdOFF Swiching Time (ns) Energy (µJ) 30 IC (A) 1200 EOFF 800 tF 100 tdON 400 tR 0 10 0 10 20 30 40 RG ( ) Fig. 15 - Typ. Energy Loss vs. RG TJ = 150°C; L=1.4mH; VCE= 400V ICE= 5.0A; VGE= 15V www.irf.com 50 60 0 10 20 30 40 50 60 RG ( ) Fig. 16 - Typ. Switching Time vs. RG TJ = 150°C; L=1.4mH; VCE= 400V ICE= 5.0A; VGE= 15V 7 20MT120UF I27124 rev. D 02/03 40 40 RG = 5.0Ω 30 RG = 10 Ω IRR (A) IRR (A) 30 R G = 30 Ω 20 R G = 50 Ω 10 20 10 0 0 0 5 10 15 20 25 30 35 0 10 20 30 IF (A) 40 3.0 35 2.5 30 2.0 Q RR (µC) IRR (A) 50 60 Fig. 18 - Typical Diode IRR vs. RG TJ = 150°C; IF = 5.0A Fig. 17 - Typical Diode IRR vs. IF TJ = 150°C 25 5.0Ω 10 Ω 20A 50Ω 1.0 15 0.5 30A 30Ω 1.5 20 10A 0.0 10 0 200 400 600 diF /dt (A/µs) Fig. 19- Typical Diode I RR vs. diF/dt VCC= 400V; VGE= 15V; ICE= 5.0A; TJ = 150°C 8 40 RG ( Ω) 800 1000 0 200 400 600 800 1000 1200 diF /dt (A/µs) Fig. 20 - Typical Diode QRR VCC= 400V; VGE= 15V;TJ = 150°C www.irf.com 20MT120UF I27124 rev. D 02/03 10000 Capacitance (pF) Cies 1000 Coes 100 Cres 10 0 20 40 60 80 100 VCE (V) Fig. 21- Typ. Capacitance vs. VCE VGE= 0V; f = 1MHz 16 14 600V 12 VGE (V) 10 8 6 4 2 0 0 40 80 120 160 200 Q G , Total Gate Charge (nC) Fig. 22 - Typical Gate Charge vs. VGE ICE = 5.0A; L = 600µH www.irf.com 9 20MT120UF I27124 rev. D 02/03 1 Thermal Response ( Z thJC ) D = 0.50 0.20 0.1 0.10 0.05 0.02 0.01 0.01 τJ R1 R1 τJ τ1 R2 R2 τ2 τ1 R3 R3 τC τ τ2 τ3 τ3 Ci= τi/Ri Ci= i/Ri 0.001 Ri (°C/W) τi (sec) 0.161 0.000759 0.210 0.017991 0.147 0.06094 Notes: 1. Duty Factor D = t1/t2 2. Peak Tj = P dm x Zthjc + Tc SINGLE PULSE ( THERMAL RESPONSE ) 0.0001 1E-006 1E-005 0.0001 0.001 0.01 0.1 1 10 t1 , Rectangular Pulse Duration (sec) Fig 23. Maximum Transient Thermal Impedance, Junction-to-Case (IGBT) 1 Thermal Response ( Z thJC ) D = 0.50 0.1 0.20 0.10 0.05 0.01 0.02 0.01 τJ R1 R1 τJ τ1 τ1 R2 R2 τ2 R3 R3 τC τ τ2 τ3 τ3 Ci= τi/Ri Ci= i/Ri 0.001 Ri (°C/W) τi (sec) 0.238 0.001017 0.312 0.033081 0.061 0.77744 Notes: 1. Duty Factor D = t1/t2 2. Peak Tj = P dm x Zthjc + Tc SINGLE PULSE ( THERMAL RESPONSE ) 0.0001 1E-006 1E-005 0.0001 0.001 0.01 0.1 1 10 t1 , Rectangular Pulse Duration (sec) Fig 24. Maximum Transient Thermal Impedance, Junction-to-Case (DIODE) 10 www.irf.com 20MT120UF I27124 rev. D 02/03 L L VCC DUT 0 80 V DUT 1000V Rg 1K Fig. CT.1 - Gate Charge Circuit (turn-off) Fig. CT.2 - RBSOA Circuit diode clamp / DUT L Driver D C 900V - 5V DUT / DRIVER DUT VCC Rg Fig. CT.3 - S.C. SOA Circuit www.irf.com Fig. CT.4 - Switching Loss Circuit 11 20MT120UF I27124 rev. D 02/03 Outline Table Electrical Diagram Resistance in ohms Dimensions in millimetres 12 www.irf.com 20MT120UF I27124 rev. D 02/03 Ordering Information Table Device Code 20 1 MT 120 2 3 U F 4 5 1 - Current rating 2 - Essential Part Number (20 = 20A) 3 - Voltage code (120 = 1200V) 4 - Speed/ Type (U 5 - Circuit Configuration (F 6 - Special Option = Ultra Fast IGBT) = Full Bridge) Data and specifications subject to change without notice. This product has been designed and qualified for Industrial Level. Qualification Standards can be found on IR's Web site. IR WORLD HEADQUARTERS: 233 Kansas St., El Segundo, California 90245, USA Tel: (310) 252-7105 TAC Fax: (310) 252-7309 Visit us at www.irf.com for sales contact information. 01/03 www.irf.com 13