Previous Datasheet Index Next Data Sheet DISCRETE POWER DIODES and THYRISTORS DATA BOOK D-460 To Order Previous Datasheet Index Next Data Sheet Bulletin I25179/B ST183S SERIES Stud Version INVERTER GRADE THYRISTORS Features 195A All diffused design Center amplifying gate Guaranteed high dv/dt Guaranteed high di/dt High surge current capability Low thermal impedance High speed performance Typical Applications Inverters Choppers Induction heating All types of force-commutated converters Major Ratings and Characteristics Parameters ST183S Units 195 A 85 °C 306 A @ 50Hz 4900 A @ 60Hz 5130 A @ 50Hz 120 KA2s @ 60Hz 110 KA2s 400 to 800 V 10 to 20 µs - 40 to 125 °C IT(AV) @ TC IT(RMS) ITSM I2t V DRM /V RRM tq range TJ case style TO-209AB (TO-93) D-461 To Order Previous Datasheet Index Next Data Sheet ST183S Series ELECTRICAL SPECIFICATIONS Voltage Ratings Voltage V DRM /V RRM , maximum VRSM , maximum I DRM /I RRM max. Code repetitive peak voltage non-repetitive peak voltage @ TJ = TJ max. V V mA 04 400 500 08 800 900 Type number ST183S 40 Current Carrying Capability ITM Frequency ITM ITM o 180 el o 180 el 100µs 50Hz 400Hz 570 560 370 360 900 940 610 630 7040 3200 5220 2280 1000Hz 500 300 925 610 1780 1200 2500Hz 340 190 760 490 880 560 Recovery voltage Vr Voltage before turn-on Vd 50 50 50 50 50 V DRM V DRM Units 50 V DRM A V Rise of on-state current di/dt 50 50 - - - - A/µs Case temperature 60 85 60 85 60 85 °C Equivalent values for RC circuit 47Ω / 0.22µF 47Ω / 0.22µF 47Ω / 0.22µF On-state Conduction Parameter I T(AV) ST183S Units Max. average on-state current 195 A @ Case temperature 85 °C I T(RMS) Max. RMS on-state current I TSM I2 t 306 Max. peak, one half cycle, 4900 non-repetitive surge current 5130 Maximum I2t for fusing t = 10ms No voltage t = 8.3ms reapplied 4120 t = 10ms 100% VRRM 4310 t = 8.3ms reapplied Sinusoidal half wave, 120 t = 10ms No voltage Initial TJ = TJ max 85 A KA2s 78 Maximum I2√t for fusing 180° conduction, half sine wave DC @ 74°C case temperature 110 I 2 √t Conditions 1200 KA2√s t = 8.3ms reapplied t = 10ms 100% VRRM t = 8.3ms reapplied t = 0.1 to 10ms, no voltage reapplied D-462 To Order Previous Datasheet Index Next Data Sheet ST183S Series Fig. 1 - Current Ratings Characteristics Fig. 2 - Current Ratings Characteristics Fig. 3 - On-state Power Loss Characteristics Fig. 4 - On-state Power Loss Characteristics D-466 To Order Previous Datasheet Index Next Data Sheet ST183S Series Fig. 5 - Maximum Non-repetitive Surge Current Fig. 6 - Maximum Non-repetitive Surge Current Fig. 7 - On-state Voltage Drop Characteristics Fig. 8 - Thermal Impedance ZthJC Characteristic Fig. 10 - Reverse Recovery Current Characteristics Fig. 9 - Reverse Recovered Charge Characteristics D-467 To Order Previous Datasheet Index ST183S Series Fig. 11 - Frequency Characteristics Fig. 12 - Frequency Characteristics Fig. 13 - Frequency Characteristics D-468 To Order Next Data Sheet Previous Datasheet Index Next Data Sheet ST183S Series Fig. 14 - Maximum On-state Energy Power Loss Characteristics Fig. 15 - Gate Characteristics D-469 To Order Previous Datasheet Index Next Data Sheet ST183S Series On-state Conduction Parameter V TM Max. peak on-state voltage V T(TO)1 Low level value of threshold voltage V T(TO)2 High level value of threshold voltage r t1 Low level value of forward slope resistance r t2 High level value of forward slope resistance ST183S Units 1.80 p 1.40 V 0.67 mΩ Maximum holding current 600 Typical latching current 1000 (16.7% x π x IT(AV) < I < π x IT(AV)), TJ = TJ max. (I > π x IT(AV)), TJ = TJ max. 0.58 IL (16.7% x π x IT(AV) < I < π x IT(AV)), TJ = TJ max. (I > π x IT(AV)), TJ = TJ max. 1.45 IH Conditions ITM= 600A, TJ = TJ max, t = 10ms sine wave pulse mA T J = 25°C, I T > 30A T J = 25°C, V A= 12V, Ra = 6Ω, I G = 1A Switching Parameter di/dt Max. non-repetitive rate of rise of turned-on current t t d q ST183S 1000 Typical delay time Max. turn-off time Units Conditions A/µs TJ = TJ max, VDRM = rated VDRM TJ = 25°C, VDM = rated VDRM, ITM = 50A DC, t = 1µs p 1.1 Min 10 ITM = 2 x di/dt Max 20 µs Resistive load, Gate pulse: 10V, 5Ω source TJ = TJ max, ITM = 300A, commutating di/dt = 20A/µs VR = 50V, t = 500µs, dv/dt: see table in device code p Blocking Parameter dv/dt Maximum critical rate of rise of off-state voltage IRRM IDRM Max. peak reverse and off-state leakage current ST183S Units Conditions 500 V/µs TJ = TJ max., linear to 80% VDRM, higher value available on request 40 mA ST183S Units TJ = TJ max, rated V DRM/V RRM applied Triggering Parameter PGM Maximum peak gate power PG(AV) Maximum average gate power 10 IGM Max. peak positive gate current 10 +VGM Maximum peak positive gate voltage 20 -VGM Maximum peak negative gate voltage 5 IGT Max. DC gate current required to trigger VGT Max. DC gate voltage required to trigger Conditions 60 W TJ = TJ max, f = 50Hz, d% = 50 A TJ = TJ max, t ≤ 5ms V TJ = TJ max, t ≤ 5ms 200 mA 3 V p p TJ = TJ max, VA = 12V, Ra = 6Ω IGD Max. DC gate current not to trigger 20 mA VGD Max. DC gate voltage not to trigger 0.25 V TJ = TJ max, rated VDRM applied D-463 To Order Previous Datasheet Index Next Data Sheet ST183S Series Thermal and Mechanical Specifications Parameter ST183S TJ Max. junction operating temperature range -40 to 125 T Max. storage temperature range -40 to 150 stg RthJC Max. thermal resistance, junction to case 0.105 RthCS Max. thermal resistance, case to heatsink 0.04 T Mounting torque, ± 10% wt Conditions °C DC operation K/W Mounting surface, smooth, flat and greased 31 Nm (275) (Ibf-in) 24.5 Nm (210) (Ibf-in) 280 g Approximate weight Case style Units Non lubricated threads Lubricated threads TO-209AB (TO-93) See Outline Table ∆RthJC Conduction (The following table shows the increment of thermal resistence RthJC when devices operate at different conduction angles than DC) Conduction angle Sinusoidal conduction Rectangular conduction Units 180° 0.016 0.012 120° 0.019 0.020 90° 0.025 0.027 60° 0.036 0.037 30° 0.060 0.060 K/W Conditions TJ = TJ max. Ordering Information Table Device Code ST 18 3 S 08 P F N 0 1 2 3 4 5 6 7 8 9 1 - Thyristor 2 - Essential part number 3 - 3 = Fast turn off 4 - S = Compression bonding Stud 5 - Voltage code: Code x 100 = VRRM (See Voltage Ratings table) 6 - P = Stud base 3/4" 16UNF-2A dv/dt - tq combinations available M = Stud base metric threads M16 x 1.5 7 dv/dt (V/µs) 8 - Reapplied dv/dt code (for tq test condition) - tq code 9 - 0 = Eyelet terminals (Gate and Aux. Cathode Leads) t (µs) q 1 = Fast-on terminals (Gate and Aux. Cathode Leads) 2 = Flag terminals (For Cathode and Gate Terminals) 10 - Critical dv/dt: 10 12 15 18 20 20 50 100 200 400 CN CM CL CP CK DN DM DL DP DK EN EM EL EP EK FN * FM FL * FP FK HN HM HL HP HK *Standard part number. All other types available only on request. None = 500V/µsec (Standard value) L 10 = 1000V/µsec (Special selection) D-464 To Order Previous Datasheet Index Next Data Sheet ST183S Series Outline Table CERAMIC HOUSING 16.5 (0.65) MAX. 8.5 (0.33) DIA. )M I N. 2.6 (0.10) MAX. 17 0 (6 .6 9 ) 1 57 (6.18 ) C.S. 0.4 mm (.0006 s.i.) . 20 C.S. 16mm 2 2 IN (0. FLEXIBLE LEAD RED SILICON RUBBER )M 79 9 .5 (0. 37 4.3 (0.17) DIA (.025 s.i.) Fast-on Terminals AMP. 280000-1 REF-250 RED CATHODE WHITE GATE 10 (0.39) WHITE SHRINK M A X. 1 2.5 ( 0.49 ) M A X . 22.5 (0.88) MAX. DIA. 2 1 (0 .8 3) 2 9 (1 .1 4) M A X. 70 ( 2.75 ) M IN . 215 (8.46) RED SHRINK Case Style TO-209AB (TO-93) SW 27 All dimensions in millimeters (inches) 1/2"-20UNF-2A 29.5 (1.16) MAX. CERAMIC HOUSING 22 (0.89) FLAG TERMINALS DIA. 6.5 (0.25) Case Style TO-209AB (TO-93) Flag All dimensions in millimeters (inches) DIA. 27.5 (1.08) MAX. 1 6 (0 .63 ) M A X . 38 .5 (1 .5 2 ) M A X . 1.5 (0.06) DIA. 2 7 .5 (1 .08 ) M A X . 8 0 ( 3 .1 5 ) M A X . 1 3 ( 0.5 1 ) 14 (0.55) SW 32 3/4"-16UNF-2A* *FOR METRIC DEVICE. M16 X 1.5 - LENGHT 21 (0.83) MAX. 3 (0.12) D-465 To Order