Previous Datasheet Index Next Data Sheet DISCRETE POWER DIODES and THYRISTORS DATA BOOK D-500 To Order Previous Datasheet Index Next Data Sheet Bulletin I25171/B ST333S SERIES Stud Version INVERTER GRADE THYRISTORS Features 330A All diffused design Center amplifying gate Guaranteed high dv/dt Guaranteed high di/dt High surge current capability Low thermal impedance High speed performance Typical Applications Inverters Choppers Induction heating All types of force-commutated converters Major Ratings and Characteristics Parameters ST333S Units 330 A 75 °C 518 A @ 50Hz 11000 A @ 60Hz 11520 A @ 50Hz 605 KA2s @ 60Hz 550 KA2s 400 to 800 V 10 to 30 µs - 40 to 125 °C IT(AV) @ TC IT(RMS) ITSM I2t V DRM /V RRM tq range TJ case style TO-209AE (TO-118) D-501 To Order Previous Datasheet Index Next Data Sheet ST333S Series ELECTRICAL SPECIFICATIONS Voltage Ratings Voltage V DRM /V RRM , maximum VRSM , maximum I DRM /I RRM max. Code repetitive peak voltage non-repetitive peak voltage @ TJ = TJ max. V V mA 04 400 500 08 800 900 Type number ST333S 50 Current Carrying Capability ITM Frequency ITM ITM o 180 el o 180 el 100µs 50Hz 400Hz 840 650 600 450 1280 1280 1040 910 5430 2150 4350 1560 1000Hz 430 230 1090 730 1080 720 2500Hz 140 60 490 250 400 190 Recovery voltage Vr Voltage before turn-on Vd 50 50 50 50 50 V DRM V DRM Units 50 V DRM A V Rise of on-state current di/dt 50 50 - - - - A/µs Case temperature 50 75 50 75 50 75 °C Equivalent values for RC circuit 10Ω / 0.47µF 10Ω / 0.47µF 10Ω / 0.47µF On-state Conduction Parameter I T(AV) ST333S Units Max. average on-state current 330 A @ Case temperature 75 °C I T(RMS) Max. RMS on-state current I TSM I2 t 518 Max. peak, one half cycle, 11000 non-repetitive surge current 11520 Maximum I2t for fusing t = 10ms No voltage t = 8.3ms reapplied 9250 t = 10ms 100% VRRM 9700 t = 8.3ms reapplied Sinusoidal half wave, 605 t = 10ms No voltage Initial TJ = TJ max t = 8.3ms reapplied 430 A KA2s 390 Maximum I2√t for fusing 180° conduction, half sine wave DC @ 63°C case temperature 550 I 2 √t Conditions 6050 KA2√s t = 10ms 100% VRRM t = 8.3ms reapplied t = 0.1 to 10ms, no voltage reapplied D-502 To Order Previous Datasheet Index Next Data Sheet ST333S Series Fig. 1 - Current Ratings Characteristics Fig. 2 - Current Ratings Characteristics Fig. 3 - On-state Power Loss Characteristics Fig. 4 - On-state Power Loss Characteristics D-506 To Order Previous Datasheet Index Next Data Sheet ST333S Series Fig. 5 - Maximum Non-repetitive Surge Current Fig. 6 - Maximum Non-repetitive Surge Current Fig. 8 - Thermal Impedance ZthJC Characteristic Fig. 7 - On-state Voltage Drop Characteristics Fig. 9 - Reverse Recovered Charge Characteristics Fig. 10 - Reverse Recovery Current Characteristics D-507 To Order Previous Datasheet Index ST333S Series Fig. 11 - Frequency Characteristics Fig. 12 - Frequency Characteristics Fig. 13 - Frequency Characteristics D-508 To Order Next Data Sheet Previous Datasheet Index Next Data Sheet ST333S Series Fig. 14 - Maximum On-state Energy Power Loss Characteristics Fig. 15 - Gate Characteristics D-509 To Order Previous Datasheet Index Next Data Sheet ST333S Series On-state Conduction Parameter V TM Max. peak on-state voltage V T(TO)1 Low level value of threshold voltage V T(TO)2 High level value of threshold voltage r t1 t2 Units 1.51 High level value of forward slope resistance p 0.91 V 0.58 mΩ Maximum holding current 600 Typical latching current 1000 (16.7% x π x IT(AV) < I < π x IT(AV)), TJ = TJ max. (I > π x IT(AV)), TJ = TJ max. 0.58 IL (16.7% x π x IT(AV) < I < π x IT(AV)), TJ = TJ max. (I > π x IT(AV)), TJ = TJ max. 0.92 IH Conditions ITM= 1040A, TJ = TJ max, t = 10ms sine wave pulse Low level value of forward slope resistance r ST333S mA T J = 25°C, I T > 30A T J = 25°C, V A= 12V, Ra = 6Ω, I G = 1A Switching Parameter di/dt Max. non-repetitive rate of rise of turned-on current t t d q ST333S 1000 Typical delay time Max. turn-off time Units Conditions A/µs TJ = TJ max, VDRM = rated VDRM TJ= 25°C, VDM = rated VDRM, ITM = 50A DC, t = 1µs p 1.0 Min 10 ITM = 2 x di/dt Max 30 µs Resistive load, Gate pulse: 10V, 5Ω source TJ = TJ max, ITM = 550A, commutating di/dt = 40A/µs VR = 50V, t = 500µs, dv/dt: see table in device code p Blocking Parameter dv/dt Maximum critical rate of rise of off-state voltage IRRM IDRM Max. peak reverse and off-state leakage current ST333S Units Conditions 500 V/µs TJ = TJ max. linear to 80% VDRM, higher value available on request 50 mA ST333S Units TJ = TJ max, rated V DRM/V RRM applied Triggering Parameter PGM Maximum peak gate power PG(AV) Maximum average gate power 10 IGM Max. peak positive gate current 10 +VGM Maximum peak positive gate voltage 20 -VGM Maximum peak negative gate voltage 5 IGT Max. DC gate current required to trigger VGT Max. DC gate voltage required to trigger Conditions 60 W TJ = TJ max, f = 50Hz, d% = 50 A TJ = TJ max, t ≤ 5ms V TJ = TJ max, t ≤ 5ms 200 mA 3 V p p TJ = 25°C, VA = 12V, Ra = 6Ω IGD Max. DC gate current not to trigger 20 mA VGD Max. DC gate voltage not to trigger 0.25 V TJ = TJ max, rated VDRM applied D-503 To Order Previous Datasheet Index Next Data Sheet ST333S Series Thermal and Mechanical Specifications Parameter ST333S Units TJ Max. junction operating temperature range -40 to 125 T Max. storage temperature range -40 to 150 stg RthJC Max. thermal resistance, junction to case 0.10 RthCS Max. thermal resistance, case to heatsink 0.03 T Mounting torque, ± 10% wt °C DC operation K/W 48.5 Nm (425) (Ibf-in) 535 g Approximate weight Case style Conditions TO-209AE (TO-118) Mounting surface, smooth, flat and greased Non lubricated threads See Outline Table ∆RthJC Conduction (The following table shows the increment of thermal resistence RthJC when devices operate at different conduction angles than DC) Conduction angle Sinusoidal conduction Rectangular conduction Units 180° 0.011 0.008 120° 0.013 0.014 90° 0.017 0.018 60° 0.025 0.026 30° 0.041 0.042 K/W Conditions TJ = TJ max. Ordering Information Table Device Code ST 33 3 S 08 P F M 0 1 2 3 4 5 6 7 8 9 1 - Thyristor 2 - Essential part number 3 - 3 = Fast turn off 4 - S = Compression bonding Stud 5 - Voltage code: Code x 100 = VRRM (See Voltage Ratings table) 6 - P = Stud base 3/4" 16UNF-2A 7 8 - Reapplied dv/dt code (for tq test condition) - tq code 9 - 0 = Eyelet terminals (Gate and Aux. Cathode Leads) 10 M = Stud base metric threads M24 x 1.5 1 = Fast-on terminals (Gate and Aux. Cathode Leads) 3 = Threaded top terminal 3/8" 24UNF-2A 10 - Critical dv/dt: None = 500V/µsec (Standard value) L = 1000V/µsec (Special selection) dv/dt - tq combinations available dv/dt (V/µs) 20 10 CN 12 CM 15 CL t (µs) q 18 CP 20 CK 25 -30 -- 50 DN DM DL DP DK --- 100 EN EM EL EP EK --- *Standard part number. All other types available only on request. D-504 To Order 200 -FM * FL * FP FK FJ -- 400 --HL HP HK HJ HH Previous Datasheet Index Next Data Sheet ST333S Series Outline Table CERAMIC HOUSING 22 (0.87) MAX. 4.5 (0.18) MAX. IN . 9. 5( 0 .3 7) MI N. 4.3 (0.17) DIA. )M WHITE GATE RED SILICON RUBBER FLEXIBLE LEAD (0.078 s.i.) Fast-on Terminals AMP. 280000-1 REF-250 47 ( 1.85) M A X. RED SHRINK 21 ( 0.82) M A X . 2 4 5 (9 .6 5) 25 5 (1 0. 04 ) WHITE SHRINK MAX. C.S. 50mm 2 24 5 (9 .6 5) ± 1 0 (0 .3 9) RED CATHODE 38 (1.50) MAX. DIA. 2 7 .5 (1.08) 22 (0 .86 10.5 (0.41) NOM. SW 45 Case Style TO-209AE (TO-118) 3/4"16 UNF-2A All dimensions in millimeters (inches) 49 (1.92) MAX. * FOR METRIC DEVICE: M24 X 1.5 - LENGHT SCREW 21 (0.83) MAX. CERAMIC HOUSING 17 (0.67) DIA. 2 5 (0 . 9 8 ) 3/8"-24UNF-2A 8 0 .5 ( 3 .1 7 ) M A X. 2 7 .5 ( 1. 0 8 ) with top thread terminal 3/8" All dimensions in millimeters (inches) SW 45 3/4"-16UNF-2A * * FOR METRIC DEVICE: M24 x 1.5 - LENGHT SCREW 21 (0.83) MAX. D-505 To Order M AX . 4 7 (1 . 8 5) 2 1 ( 0 .8 3 ) Case Style TO-209AE (TO-118) M AX . 7 7 .5 ( 3 .0 5 ) 38 (1.5) DIA. MAX.