PD -94313C IRG4MC30F Fast Speed IGBT INSULATED GATE BIPOLAR TRANSISTOR Features • • • • • • • C Electrically Isolated and Hermetically Sealed Simple Drive Requirements Latch-proof Fast Speed operation 3 kHz - 8 kHz High operating frequency Switching-loss rating includes all "tail" losses Ceramic eyelets VCES = 600V VCE(on) max =1.7V G @VGE = 15V, IC = 15A E n-channel Benefits • Generation 4 IGBT's offer highest efficiency available • IGBT's optimized for specified application conditions • Designed to be a "drop-in" replacement for equivalent IR Hi-Rel Generation 3 IGBT's Insulated Gate Bipolar Transistors (IGBTs) from International Rectifier have higher usable current densities than comparable bipolar transistors, while at the same time having simpler gate-drive requirements of the familiar power MOSFET. They provide substantial benefits to a host of high-voltage, highcurrent applications. TO-254AA Absolute Maximum Ratings VCES IC @ TC = 25°C IC @ TC = 100°C ICM ILM VGE PD @ TC = 25°C PD @ T C = 100°C TJ TSTG Parameter Max. Units Collector-to-Emitter Breakdown Voltage Continuous Collector Current Continuous Collector Current Pulsed Collector Current ➀ Clamped Inductive Load Current ➁ Gate-to-Emitter Voltage Maximum Power Dissipation Maximum Power Dissipation Operating Junction and Storage Temperature Range Lead Temperature Weight 600 28 15 112 112 ± 20 75 30 -55 to + 150 V A V W °C 300 (0.063in./1.6mm from case for 10s) 9.3 (typical) g Thermal Resistance Parameter R thJC Junction-to-Case www.irf.com Min Typ Max Units — — 1.67 Test Conditions °C/W 1 02/08/02 IRG4MC30F Electrical Characteristics @ TJ = 25°C (unless otherwise specified) Parameter Min. Typ. Collector-to-Emitter Breakdown Voltage 600 ––– Emitter-to-Collector Breakdown Voltage S 18 ––– ∆V(BR)CES/∆TJ Temperature Coeff. of Breakdown Voltage ––– 0.63 ––– ––– VCE(ON) Collector-to-Emitter Saturation Voltage ––– ––– ––– ––– VGE(th) Gate Threshold Voltage 3.0 ––– ∆VGE(th)/∆TJ Temperature Coeff. of Threshold Voltage ––– -11 gfe Forward Transconductance T 14 ––– ––– ––– ICES Zero Gate Voltage Collector Current ––– ––– IGES Gate-to-Emitter Leakage Current ––– ––– V(BR)CES V(BR)ECS Max. Units Conditions ––– V VGE = 0V, IC = 1.0 mA ––– V VGE = 0V, IC = 1.0 A ––– V/°C VGE = 0V, IC = 1.0 mA VGE = 15V 1.7 IC = 15A 2.2 V IC = 28A See Fig.2, 5 2.7 IC = 15A , TJ = 125°C 6.0 VCE = VGE, IC = 1.0 mA ––– mV/°C VCE = VGE, IC = 250 µA ––– S VCE ≥ 15V, IC = 15A 50 VGE = 0V, VCE = 480V µA 1000 VGE = 0V, VCE = 480V, TJ = 125°C ±100 nA VGE = ±20V Switching Characteristics @ TJ = 25°C (unless otherwise specified) Qg Qge Qgc td(on) tr td(off) tf Ets td(on) tr td(off) tr Ets LC+LE Parameter Total Gate Charge (turn-on) Gate - Emitter Charge (turn-on) Gate - Collector Charge (turn-on) Turn-On Delay Time Rise Time Turn-Off Delay Time Fall Time Total Switching Loss Turn-On Delay Time Rise Time Turn-Off Delay Time Rise Time Total Switching Loss Total Inductance Cies Coes Cres Input Capacitance Output Capacitance Reverse Transfer Capacitance Min. ––– ––– ––– ––– ––– ––– ––– ––– ––– ––– ––– ––– ––– ––– Typ. ––– ––– ––– ––– ––– ––– ––– ––– ––– ––– ––– ––– ––– 6.8 Max. Units Conditions 77 IC = 15A 12 nC VCC = 300V See Fig. 8 24 VGE = 15V 42 TJ = 25°C 30 IC = 15A, VCC = 480V ns 300 VGE = 15V, RG = 7.5Ω 300 Energy losses include "tail" 2.0 mJ See Fig. 10, 11, 13, 14 25 TJ = 125°C, 20 ns IC = 15A, VCC = 480V 450 VGE = 15V, RG = 7.5Ω 550 Energy losses include "tail" 3.0 mJ See Fig. 13, 14 ––– nH Measured from Collector lead (6mm/ 0.25in. from package) to Emitter lead (6mm / 0.25in. from package) ––– 1100 ––– VGE = 0V ––– 74 ––– pF VCC = 30V See Fig. 7 ––– 14 ––– ƒ = 1.0MHz Notes: Q Repetitive rating; VGE = 20V, pulse width limited by max. junction temperature. ( See fig. 13b ) R VCC = 80%(VCES), VGE = 20V, L = 100µH, RG = 7.5Ω, S Pulse width ≤ 80µs; duty factor ≤ 0.1%. T Pulse width 5.0µs, single shot. (See fig. 13a) 2 www.irf.com IRG4MC30F 40 Square wave: Triangular wave: 60% of rated voltage Load Current ( A ) 30 Clamp voltage: 80% of rated Ideal diodes 20 For both: Duty cycle : 50% Tj = 125°C Tsink = 90°C Gate drive as specified Power Dissipation = 19W 10 0 0.1 1 10 100 f , Frequency ( kHz ) Fig. 1 - Typical Load Current vs. Frequency (For square wave, I=IRMS of fundamental; for triangular wave, I=IPK) I C , Collector-to-Emitter Current (A) I C , Collector-to-Emitter Current (A) 1000 1000 100 100 10 TJ = 150 °C TJ = 25 ° C V = 15V 20µs PULSE WIDTH GE 1 0.1 1 10 VCE , Collector-to-Emitter Voltage (V) Fig. 2 - Typical Output Characteristics www.irf.com TJ = 150 °C 10 TJ = 25 ° C V = 50V 5µs PULSE WIDTH CC 1 5 10 15 20 VGE , Gate-to-Emitter Voltage (V) Fig. 3 - Typical Transfer Characteristics 3 IRG4MC30F 2.5 VCE , Collector-to Emitter Voltage (V) 25 20 15 10 5 VGE = 15V IC = 30A 80µs PULSE WIDTH 2.0 IC = 15A 1.5 IC = 7.5A 1.0 0 25 50 75 100 125 150 -60 -40 -20 T C , Case Temperature ( °C) 0 20 40 60 80 100 120 140 160 T J , Junction Temperature (°C) Fig. 4 - Maximum Collector Current vs. Case Temperature Fig. 5 - Collector-to-Emitter Voltage vs. Junction Temperature 10 Thermal Response (Z thJC) Maximum DC Collector Current(A) 30 1 D = 0.50 0.20 0.10 P DM 0.05 0.1 0.01 0.00001 0.02 0.01 t1 SINGLE PULSE (THERMAL RESPONSE) t2 Notes: 1. Duty factor D =t 1 / t2 2. Peak TJ = PDM x Z thJC + TC 0.0001 0.001 0.01 0.1 1 t1 , Rectangular Pulse Duration (sec) Fig. 6 - Maximum Effective Transient Thermal Impedance, Junction-to-Case 4 www.irf.com IRG4MC30F VGE = 0V, f = 1MHz Cies = Cge + Cgc , Cce SHORTED Cres = Cgc Coes = Cce + Cgc C, Capacitance (pF) 1600 Cies 1200 800 Coes 400 C res 20 VGE , Gate-to-Emitter Voltage (V) 2000 VCC = 300V 400V I C = 15A 16 12 8 4 0 0 1 10 0 100 10 20 30 40 50 QG , Total Gate Charge (nC) VCE , Collector-to-Emitter Voltage (V) Fig. 8 - Typical Gate Charge vs. Gate-to-Emitter Voltage Fig. 7 - Typical Capacitance vs. Collector-to-Emitter Voltage 1.55 100 1.50 VCC = 480V VGE = 15V RG = 7.5Ω VGE = 15V TJ = 25°C I C = 15A VCC = 480V Total Switching Losses (mJ) Total Switching Losses (mJ) 1.45 1.40 1.35 10 IC = 30A IC = 15A IC = 7.5A 1 0.1 0 10 20 30 40 50 R G, Gate Resistance ( Ω ) Fig. 9 - Typical Switching Losses vs. Gate Resistance www.irf.com -60 -40 -20 0 20 40 60 80 100 120 140 160 T J, Junction Temperature (°C) Fig. 10 - Typical Switching Losses vs. Junction Temperature 5 IRG4MC30F 1000 6.0 Total Switching Losses (mJ) 5.0 IC, Collector-to-Emitter Current (A) RG = 7.5Ω TJ = 125°C 150°C VGE = 15V VCC = 480V 4.0 3.0 2.0 1.0 100 SAFE OPERATING AREA 10 1 0.0 5 10 15 20 25 IC , Collector Current (A) Fig. 11 - Typical Switching Losses vs. Collector-to-Emitter Current 6 VGE = 20V T J = 125° 30 0.1 1 10 100 1000 VCE , Collector-to-Emitter Voltage (V) Fig. 12 - Turn-Off SOA www.irf.com IRG4MC30F L D .U .T. VC * 50V RL = 0 - 720V 1 00 0V 720V 4 X IC@25°C 480µF 960V Q R * Driver s am e ty pe as D .U .T.; Vc = 80% of V ce (m ax ) * Note: D ue to the 50V pow er s upply, pulse w idth a nd inductor w ill inc rea se to obta in ra ted Id. Fig. 13a - Clamped Inductive Fig. 13b - Pulsed Collector Load Test Circuit Current Test Circuit IC L D river* D .U .T. VC Fig. 14a - Switching Loss Test Circuit 50V 1000V Q * Driver same type as D.U.T., VC = 720V R S Q R 9 0% 1 0% S VC 90 % Fig. 14b - Switching Loss t d (o ff) 10 % IC 5% Waveforms tf tr t d (o n ) t=5µ s E on E o ff E ts = ( Eo n +E o ff ) www.irf.com 7 IRG4MC30F Case Outline and Dimensions — TO-254AA 0.12 [.005] 0.12 [.005] 6.60 [.260] 6.32 [.249] 13.84 [.545] 13.59 [.535] 3.78 [.149] 3.53 [.139] A 20.32 [.800] 20.07 [.790] 17.40 [.685] 16.89 [.665] 1 C 2 13.84 [.545] 13.59 [.535] B 6.60 [.260] 6.32 [.249] 13.84 [.545] 13.59 [.535] 3.78 [.149] 3.53 [.139] 1.27 [.050] 1.02 [.040] 1.27 [.050] 1.02 [.040] A 22.73 [.895] 21.21 [.835] 20.32 [.800] 20.07 [.790] 17.40 [.685] 16.89 [.665] 1 2 13.84 [.545] 13.59 [.535] B R 1.52 [.060] 3 3 17.40 [.685] 16.89 [.665] 0.84 [.033] MAX. 4.82 [.190] 3.81 [.150] 4.06 [.160] 3.56 [.140] 3X 1.14 [.045] 0.89 [.035] 3.81 [.150] 3X 1.14 [.045] 0.89 [.035] 2X 0.36 [.014] 0.36 [.014] B A 3.81 [.150] 3.81 [.150] B A NOTE S: 1. DIME NSIONING & T OLERANCING PER ASME Y14.5M-1994. 2. ALL DIME NSIONS ARE SHOWN IN MILLIMETE RS [INCHES]. 3. CONT ROLLING DIMENSION: INCH. 4. CONF ORMS T O JEDEC OUT LINE T O-254AA. PIN ASSIGNMENTS 1 = COLLECTOR 2 = EMITTER 3 = GATE CAUTION BERYLLIA WARNING PER MIL-PRF-19500 Packages containing beryllia shall not be ground, sandblasted, machined, or have other operations performed on them which will produce beryllia or beryllium dust. Furthermore, beryllium oxide packages shall not be placed in acids that will produce fumes containing beryllium. IR WORLD HEADQUARTERS: 233 Kansas St., El Segundo, California 90245, USA Tel: (310) 252-7105 TAC Fax: (310) 252-7903 Visit us at www.irf.com for sales contact information. Data and specifications subject to change without notice. 02/02 8 www.irf.com