BUZ 103SL-4 Preliminary data SIPMOS ® Power Transistor • Quad-channel • Enhancement mode • Logic level • Avalanche-rated • dv/dt rated Type VDS ID RDS(on) Package Ordering Code BUZ 103SL-4 55 V 4.8 A 0.055 Ω P-DSO-28 C67078-S. . . .- . . Maximum Ratings Parameter Symbol Continuous drain current one channel active ID TA = 25 °C Values Unit A 4.8 Pulsed drain current one channel active IDpuls TA = 25 °C 19.2 EAS Avalanche energy, single pulse mJ ID = 4.8 A, VDD = 25 V, RGS = 25 Ω L = 12 mH, Tj = 25 °C 140 Reverse diode dv/dt dv/dt kV/µs IS = 4.8 A, VDS = 40 V, diF/dt = 200 A/µs Tjmax = 175 °C 6 Gate source voltage VGS Power dissipation ,one channel active Ptot TA = 25 °C ± 14 V W 2.4 Operating temperature Tj -55 ... + 175 Storage temperature Tstg -55 ... + 175 IEC climatic category, DIN IEC 68-1 Semiconductor Group °C 55 / 175 / 56 1 05/Sep/1997 BUZ 103SL-4 Preliminary data Thermal Characteristics Symbol Parameter Values Unit min. typ. max. Thermal resistance, junction - soldering point 1) RthJS - tbd - Thermal resistance, junction - ambient 2) RthJA - 62.5 - K/W 1) Device on 50mm*50mm*1.5mm epoxy PCB FR4 with 6 cm2 (one layer,70µm thick) copper area for Drain connection. PCB is vertical without blown air. 2) one channel active Electrical Characteristics, at Tj = 25°C, unless otherwise specified Parameter Symbol Values min. typ. Unit max. Static Characteristics Drain- source breakdown voltage V(BR)DSS VGS = 0 V, ID = 0.25 mA, Tj = 25 °C Gate threshold voltage 55 - - 1.2 1.6 2 VGS(th) VGS=VDS, ID = 50 µA Zero gate voltage drain current V IDSS µA VDS = 55 V, VGS = 0 V, Tj = -40 °C - - 0.1 VDS = 55 V, VGS = 0 V, Tj = 25 °C - 0.1 1 VDS = 55 V, VGS = 0 V, Tj = 150 °C - - 100 Gate-source leakage current IGSS VGS = 20 V, VDS = 0 V Drain-Source on-resistance - 10 100 Ω RDS(on) VGS = 5 V, ID = 4.8 A Semiconductor Group nA - 2 0.0403 0.055 05/Sep/1997 BUZ 103SL-4 Preliminary data Electrical Characteristics, at Tj = 25°C, unless otherwise specified Parameter Symbol Values min. typ. Unit max. Dynamic Characteristics Transconductance gfs VDS≥ 2 * ID * RDS(on)max, ID = 0 A Input capacitance tbd pF - 770 960 - 230 290 - 130 165 Crss VGS = 0 V, VDS = 25 V, f = 1 MHz Turn-on delay time - Coss VGS = 0 V, VDS = 25 V, f = 1 MHz Reverse transfer capacitance - Ciss VGS = 0 V, VDS = 25 V, f = 1 MHz Output capacitance S td(on) ns VDD = 30 V, VGS = 5 V, ID = 4.8 A RG = 6.5 Ω Rise time - 50 75 - 30 45 - 20 30 - 40 60 tr VDD = 30 V, VGS = 5 V, ID = 4.8 A RG = 6.5 Ω Turn-off delay time td(off) VDD = 30 V, VGS = 5 V, ID = 4.8 A RG = 6.5 Ω Fall time tf VDD = 30 V, VGS = 5 V, ID = 4.8 A RG = 6.5 Ω Gate charge at threshold Qg(th) VDD = 40 V, ID ≥ 0.1 A, VGS =0 to 1 V Gate charge at 5.0 V 2 - 20 30 - 32.6 50 V(plateau) VDD = 40 V, ID = 28 A Semiconductor Group 1.33 Qg(total) VDD = 40 V, ID = 4.8 A, VGS =0 to 10 V Gate plateau voltage - Qg(5) VDD = 40 V, ID = 4.8 A, VGS =0 to 5 V Gate charge total nC V - 3 2.94 05/Sep/1997 BUZ 103SL-4 Preliminary data Electrical Characteristics, at Tj = 25°C, unless otherwise specified Parameter Symbol Values min. typ. Unit max. Reverse Diode Inverse diode continuous forward current IS TA = 25 °C Inverse diode direct current, pulsed - - 19.2 V 0.9 1.6 trr ns - 55 85 Qrr VR = 30 V, IF=lS, diF/dt = 100 A/µs Semiconductor Group 4.8 - VR = 30 V, IF=lS, diF/dt = 100 A/µs Reverse recovery charge - VSD VGS = 0 V, IF = 9.6 A Reverse recovery time - ISM TA = 25 °C Inverse diode forward voltage A nC - 4 93 140 05/Sep/1997 BUZ 103SL-4 Preliminary data Power dissipation Ptot = ƒ(TA) Drain current ID = ƒ(TA) parameter: VGS ≥ 5 V 5.0 2.8 W A 2.4 Ptot ID 2.2 2.0 4.0 3.5 1.8 3.0 1.6 2.5 1.4 1.2 2.0 1.0 1.5 0.8 0.6 1.0 0.4 0.5 0.2 0.0 0.0 0 20 40 60 80 100 120 140 °C 180 0 20 40 60 80 100 120 140 TA Safe operating area ID = ƒ(VDS) parameter: D = 0, TC = 25°C ID 10 2 S = A R ( DS on 180 Transient thermal impedance Zth JA = ƒ(tp) parameter: D = tp / T /I D 10 2 °C TA VD K/W ) 10 1 tp = 1.4ms ZthJC 10 1 10 ms 10 0 10 -1 10 0 10 -2 D = 0.50 0.20 10 -3 0.10 10 -1 0.05 10 -4 0.02 DC 0.01 10 -5 single pulse 10 -2 0 10 10 1 V 10 10 -6 -8 -7 -6 -5 -4 -3 -2 -1 0 10 10 10 10 10 10 10 10 s 10 2 VDS Semiconductor Group tp 5 05/Sep/1997 BUZ 103SL-4 Preliminary data Typ. drain-source on-resistance RDS (on) = ƒ(ID) parameter: tp = 80 µs, Tj = 25 °C Typ. output characteristics ID = ƒ(VDS) parameter: tp = 80 µs 11 A 0.17 Pj tot = 2W a Ω lki hgf e b d ID VGS [V] a 2.0 9 8 7 6 5 4 c 3 b 2.5 c 3.0 d 3.5 e 4.0 f 4.5 g 5.0 h 5.5 i 6.0 j 7.0 k 8.0 l 10.0 0.14 RDS (on) 0.12 0.10 0.08 c 0.06 d e f g hi j 0.04 2 0.02 1 b 0 a 0.0 0.5 1.0 1.5 2.0 2.5 3.0 3.5 4.0 V 0.00 0 5.0 VGS [V] = a 2.0 2.5 3.0 b 3.5 2 c 4.0 d 4.5 e f 5.0 5.5 4 g 6.0 6 h i j 7.0 8.0 10.0 8 A 11 ID VDS Typ. transfer characteristics ID = f (VGS) parameter: tp = 80 µs VDS≥2 x ID x RDS(on)max 90 A ID 70 60 50 40 30 20 10 0 0 1 2 3 Semiconductor Group 4 5 6 7 8 V VGS 10 6 05/Sep/1997 BUZ 103SL-4 Preliminary data Drain-source on-resistance RDS (on) = ƒ(Tj) parameter: ID = 4.8 A, VGS = 5 V Gate threshold voltage VGS (th) = ƒ(Tj) parameter: VGS = VDS, ID = 50 µA 0.15 4.6 Ω V 0.13 4.0 RDS (on)0.12 VGS(th) 3.6 0.11 3.2 0.10 2.8 0.09 0.08 2.4 98% 98% 0.07 2.0 0.06 typ typ 0.05 1.6 0.04 1.2 2% 0.03 0.8 0.02 0.01 0.00 -60 0.4 -20 20 60 100 °C 0.0 -60 180 -20 20 60 100 °C Tj 180 Tj Typ. capacitances Forward characteristics of reverse diode IF = ƒ(VSD) parameter: Tj, tp = 80 µs C = f (VDS) parameter:VGS = 0V, f = 1MHz 10 4 10 3 A C IF pF 10 2 10 3 Ciss 10 1 Tj = 25 °C typ Tj = 175 °C typ Tj = 25 °C (98%) Coss Tj = 175 °C (98%) 10 2 0 Crss 5 10 Semiconductor Group 15 20 25 30 V 40 VDS 7 10 0 0.0 0.4 0.8 1.2 1.6 2.0 2.4 V 3.0 VSD 05/Sep/1997 BUZ 103SL-4 Preliminary data Avalanche energy EAS = ƒ(Tj) parameter: ID = 4.8 A, VDD = 25 V RGS = 25 Ω, L = 12 mH Typ. gate charge VGS = ƒ(QGate) parameter: ID puls = 5 A 16 150 mJ V 130 EAS 120 VGS 110 12 100 10 90 80 8 70 60 0,2 VDS max 6 0,8 VDS max 50 40 4 30 20 10 0 20 2 40 60 80 100 120 140 °C 0 0 180 Tj 5 10 15 20 25 30 35 40 nC 50 QGate Drain-source breakdown voltage V(BR)DSS = ƒ(Tj) 65 V V(BR)DSS 61 59 57 55 53 51 49 -60 -20 20 60 100 °C 180 Tj Semiconductor Group 8 05/Sep/1997