INFINEON SPU07N20

Preliminary Data
SPD 07N20
SIPMOS Power Transistor
Features
Product Summary
• N channel
Drain source voltage
VDS
200
V
•
Drain-Source on-state resistance
RDS(on)
0.4
Ω
Continuous drain current
ID
7
A
Enhancement mode
• Avalanche rated
• dv/dt rated
Type
Package
Ordering Code
Packaging
SPD07N20
P-TO252
Q67040-S4120-A2 Tape and Reel
SPU07N20
P-TO251
Q67040-S4112-A2 Tube
Maximum Ratings, at Tj = 25 ˚C, unless otherwise specified
Symbol
Parameter
Continuous drain current
Pin 1
G
Value
D
S
Unit
A
ID
TC = 25 ˚C
7
TC = 100 ˚C
4.5
Pulsed drain current
Pin 2 Pin 3
IDpulse
28
EAS
120
EAR
4
dv/dt
6
Gate source voltage
VGS
±20
V
Power dissipation
Ptot
40
W
-55... +175
˚C
TC = 25 ˚C
Avalanche energy, single pulse
mJ
ID = 7 A, VDD = 50 V, RGS = 25 Ω
Avalanche energy, periodic limited by Tjmax
Reverse diode dv/dt
kV/µs
IS = 7 A, V DS = 160 V, di/dt = 200 A/µs,
Tjmax = 175 ˚C
TC = 25 ˚C
Operating and storage temperature
Tj , Tstg
IEC climatic category; DIN IEC 68-1
Data Sheet
55/150/56
1
05.99
SPD 07N20
Thermal Characteristics
Symbol
Parameter
Values
min.
typ.
Unit
max.
Characteristics
Thermal resistance, junction - case
RthJC
-
3.1
Thermal resistance, junction - ambient, leded
RthJA
-
-
100
SMD version, device on PCB:
RthJA
@ min. footprint
-
-
75
@ 6 cm 2 cooling area1)
-
-
50
K/W
Electrical Characteristics, at T j = 25 ˚C, unless otherwise specified
Symbol
Parameter
Values
Unit
min.
typ.
max.
V(BR)DSS
200
-
-
VGS(th)
2.1
3
4
Static Characteristics
Drain- source breakdown voltage
V
VGS = 0 V, ID = 0.25 mA
Gate threshold voltage, VGS = VDS
ID = 1 mA
Zero gate voltage drain current
µA
IDSS
VDS = 200 V, VGS = 0 V, Tj = 25 ˚C
-
0.1
1
VDS = 200 V, VGS = 0 V, Tj = 125 ˚C
-
-
100
-
10
100
Gate-source leakage current
IGSS
nA
VGS = 20 V, VDS = 0 V
Drain-Source on-state resistance
Ω
RDS(on)
VGS = 10 V, ID = 4.5 A
-
0.3
0.4
1 Device on 40mm*40mm*1.5mm epoxy PCB FR4 with 6 cm2 (one layer, 70µm thick) copper area for drain
connection. PCB is vertical without blown air.
Data Sheet
2
05.99
SPD 07N20
Electrical Characteristics, at T j = 25 ˚C, unless otherwise specified
Symbol
Values
Parameter
Unit
min.
typ.
max.
g fs
3
4.2
-
S
Ciss
-
400
530
pF
Coss
-
85
130
Crss
-
45
70
td(on)
-
10
15
tr
-
40
60
td(off)
-
55
75
tf
-
30
40
Dynamic Characteristics
Transconductance
VDS≥2*ID*RDS(on)max , ID = 4.5 A
Input capacitance
VGS = 0 V, VDS = 25 V, f = 1 MHz
Output capacitance
VGS = 0 V, VDS = 25 V, f = 1 MHz
Reverse transfer capacitance
VGS = 0 V, VDS = 25 V, f = 1 MHz
Turn-on delay time
ns
VDD = 30 V, VGS = 10 V, ID = 3 A,
RG = 50 Ω
Rise time
VDD = 30 V, VGS = 10 V, ID = 3 A,
RG = 50 Ω
Turn-off delay time
VDD = 30 V, VGS = 10 V, ID = 3 A,
RG = 50 Ω
Fall time
VDD = 30 V, VGS = 10 V, ID = 3 A,
RG = 50 Ω
Data Sheet
3
05.99
SPD 07N20
Electrical Characteristics, at T j = 25 ˚C, unless otherwise specified
Symbol
Parameter
Values
Unit
min.
typ.
max.
Qgs
-
5
7.5
Qgd
-
10
22.5
Qg
-
21
31.5
V(plateau)
-
7
-
V
IS
-
-
7
A
I SM
-
-
28
VSD
-
1.3
1.7
V
t rr
-
200
300
ns
Q rr
-
0.6
0.9
µC
Dynamic Characteristics
Gate to source charge
nC
VDD = 160 V, ID = 7 A
Gate to drain charge
VDD = 160 V, ID = 7 A
Gate charge total
VDD = 160 V, ID = 7 A, V GS = 0 to 10 V
Gate plateau voltage
VDD = 160 V, ID = 7 A
Reverse Diode
Inverse diode continuous forward current
TC = 25 ˚C
Inverse diode direct current,pulsed
TC = 25 ˚C
Inverse diode forward voltage
VGS = 0 V, I F = 14 A
Reverse recovery time
VR = 100 V, I F=IS , diF/dt = 100 A/µs
Reverse recovery charge
VR = 100 V, I F=lS , di F/dt = 100 A/µs
Data Sheet
4
05.99
SPD 07N20
Power Dissipation
Drain current
Ptot = f (TC)
ID = f (TC )
parameter: VGS ≥ 10 V
SPD07N20
SPD07N20
45
7.5
A
W
6.0
35
5.0
ID
Ptot
5.5
30
25
4.5
4.0
3.5
20
3.0
15
2.5
2.0
10
1.5
1.0
5
0.5
0
0
20
40
60
80
100
120
˚C
0.0
0
160
20
40
60
80
100
120
TC
160
TC
Safe operating area
Transient thermal impedance
I D = f (V DS)
ZthJC = f (tp )
parameter : D = 0 , T C = 25 ˚C
parameter : D = tp /T
10 2
˚C
SPD07N20
10 1
SPD07N20
K/W
A
/I
D
tp = 22.0µs
V
DS
10 0
R
ID
DS
(o
n)
10 1
Z thJC
=
100 µs
10 -1
1 ms
D = 0.50
0.20
10
0
0.10
10 ms
0.05
10 -2
0.02
0.01
single pulse
DC
10 -1 0
10
10
1
10
2
V
10
10 -3 -7
10
3
VDS
Data Sheet
10
-6
10
-5
10
-4
10
-3
10
-2
s
10
0
tp
5
05.99
SPD 07N20
Typ. output characteristics
Typ. drain-source-on-resistance
I D = f (VDS)
RDS(on) = f (ID)
parameter: tp = 80 µs
parameter: V GS
SPD07N20
17
SPD07N20
Ptot = 40W
1.3
Ω
A
f
VGS [V]
a
14
b
4.5
c
5.0
d
5.5
e
6.0
f
6.5
g
7.0
d h
7.5
ID
12
e
10
8
i
6
c
4
9.0
k
10.0
l
20.0
0.8
0.5
0.4
0.3
0.2
0.1
6
e
0.9
a
4
d
0.6
2
2
c
0.7
b
0
0
b
1.0
8.0
j
a
1.1
4.0
RDS(on)
l
i j kh g
V
8
11
VGS [V] =
a
4.0
0.0
0
VDS
f kg
jh
i
l
b
4.5
c
5.0
2
d
5.5
e
f
6.0 6.5
4
6
g
7.0
h
i
7.5 8.0
8
j
9.0
k
l
10.0 20.0
A
12
ID
Typ. transfer characteristics I D= f (VGS)
Typ. forward transconductance
parameter: tp = 80 µs
gfs = f(ID ); Tj = 25˚C
VDS ≥ 2 x I D x RDS(on) max
parameter: gfs
13
6
A
S
11
10
4
gfs
ID
9
8
7
3
6
5
2
4
3
1
2
1
0
0
1
2
3
4
5
6
7
8
V
0
0
10
VGS
Data Sheet
2
4
6
8
10
12
14
16
18 A 21
ID
6
05.99
SPD 07N20
Gate threshold voltage
Drain-source on-resistance
VGS(th) = f (Tj)
RDS(on) = f (Tj)
parameter : VGS = V DS, ID = 1 mA
parameter : ID = 4.5 A, VGS = 10 V
SPD07N20
5.0
V
1.8
Ω
4.4
4.0
VGS(th)
RDS(on)
1.4
1.2
3.6
max
3.2
2.8
1.0
2.4
0.8
98%
1.6
0.6
min
typ
1.2
0.4
0.8
0.4
0.2
0.0
-60
typ
2.0
0.0
-60
-20
20
60
100
140
˚C
-20
20
60
100
200
˚C
160
Tj
Tj
Typ. capacitances
Forward characteristics of reverse diode
C = f (VDS)
IF = f (VSD )
parameter: V GS = 0 V, f = 1 MHz
parameter: Tj , tp = 80 µs
10
4
10 2
pF
SPD07N20
A
10 3
C
IF
10 1
C iss
10 2
10 0
Coss
Tj = 25 ˚C typ
Tj = 150 ˚C typ
Crss
Tj = 25 ˚C (98%)
Tj = 150 ˚C (98%)
10 1
0
5
10
15
20
25
30
V
10 -1
0.0
40
VDS
Data Sheet
0.4
0.8
1.2
1.6
2.0
2.4
V
3.0
VSD
7
05.99
SPD 07N20
Avalanche Energy EAS = f (Tj)
Typ. gate charge
parameter: ID = 7 A, VDD = 50 V
VGS = f (QGate )
RGS = 25 Ω
parameter: ID puls = 7 A
SPD07N20
130
16
mJ
V
110
100
12
VGS
EAS
90
80
0,2 VDS max
10
0,8 VDS max
70
8
60
50
6
40
4
30
20
2
10
0
20
40
60
80
100
˚C
120
0
0
160
Tj
4
8
12
16
20
24
28
nC 34
Q Gate
Drain-source breakdown voltage
V(BR)DSS = f (Tj)
SPD07N20
245
V
V(BR)DSS
235
230
225
220
215
210
205
200
195
190
185
180
-60
-20
20
60
100
˚C
180
Tj
Data Sheet
8
05.99