IRF IRF6628TRPBF

PD - 97234
IRF6628PbF
IRF6628TRPbF
DirectFET™ Power MOSFET ‚
Typical values (unless otherwise specified)
RoHs Compliant 
VDSS
VGS
RDS(on)
RDS(on)
l Lead-Free (Qualified up to 260°C Reflow)
l Application Specific MOSFETs
25V max ±20V max 1.9mΩ@ 10V 2.5mΩ@ 4.5V
l Ideal for CPU Core DC-DC Converters
Qg tot Qgd
Qgs2
Qrr
Qoss Vgs(th)
l Low Conduction Losses
31nC
12nC
4.1nC
26nC
21nC
1.9V
l High Cdv/dt Immunity
l Low Profile (<0.7mm)
l Dual Sided Cooling Compatible 
l Compatible with existing Surface Mount Techniques 
l
DirectFET™ ISOMETRIC
MX
Applicable DirectFET Outline and Substrate Outline (see p.7,8 for details)
SQ
SX
ST
MQ
MX
MT
MP
Description
The IRF6628PbF combines the latest HEXFET® Power MOSFET Silicon technology with the advanced DirectFETTM packaging to achieve
the lowest on-state resistance in a package that has the footprint of a SO-8 and only 0.6 mm profile. The DirectFET package is compatible
with existing layout geometries used in power applications, PCB assembly equipment and vapor phase, infra-red or convection soldering
techniques, when application note AN-1035 is followed regarding the manufacturing methods and processes. The DirectFET package allows
dual sided cooling to maximize thermal transfer in power systems, improving previous best thermal resistance by 80%.
The IRF6628PbF balances both low resistance and low charge along with ultra low package inductance to reduce both conduction and
switching losses. The reduced total losses make this product ideal for high efficiency DC-DC converters that power the latest generation of
processors operating at higher frequencies. The IRF6628PbF has been optimized for parameters that are critical in synchronous buck
including Rds(on), gate charge and Cdv/dt-induced turn on immunity. The IRF6628PbF offers particularly low Rds(on) and high Cdv/dt
immunity for synchronous FET applications.
Absolute Maximum Ratings
Parameter
Drain-to-Source Voltage
Gate-to-Source Voltage
Continuous Drain Current, VGS @ 10V
Continuous Drain Current, VGS @ 10V
Continuous Drain Current, VGS @ 10V
VGS
ID @ TA = 25°C
ID @ TA = 70°C
ID @ TC = 25°C
IDM
EAS
IAR
g
Pulsed Drain Current
Single Pulse Avalanche Energy
Avalanche Current
g
h
Typical RDS(on) (mΩ)
10
ID = 27A
8
6
4
T J = 125°C
2
T J = 25°C
0
3
4
5
6
7
8
9
10
11
VGS, Gate -to -Source Voltage (V)
Fig 1. Typical On-Resistance vs. Gate Voltage
Notes:
 Click on this section to link to the appropriate technical paper.
‚ Click on this section to link to the DirectFET Website.
ƒ Surface mounted on 1 in. square Cu board, steady state.
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e
e
f
VGS, Gate-to-Source Voltage (V)
VDS
Max.
Units
25
±20
27
22
160
220
38
22
V
A
mJ
A
6.0
ID= 22A
VDS= 20V
VDS= 13V
5.0
4.0
VDS= 5.0V
3.0
2.0
1.0
0.0
0
10
20
30
40
QG Total Gate Charge (nC)
Fig 2. Typical Total Gate Charge vs Gate-to-Source Voltage
„ TC measured with thermocouple mounted to top (Drain) of part.
… Repetitive rating; pulse width limited by max. junction temperature.
† Starting TJ = 25°C, L = 0.16mH, RG = 25Ω, IAS = 22A.
1
07/11/06
IRF6628PbF
Static @ TJ = 25°C (unless otherwise specified)
Parameter
Min.
Drain-to-Source Breakdown Voltage
25
–––
–––
∆ΒVDSS/∆TJ
RDS(on)
Breakdown Voltage Temp. Coefficient
–––
16
–––
Static Drain-to-Source On-Resistance
–––
1.9
2.5
–––
2.5
3.3
V
Gate Threshold Voltage
1.35
1.9
2.35
V
∆VGS(th)/∆TJ
IDSS
Gate Threshold Voltage Coefficient
–––
-6.0
–––
mV/°C
Drain-to-Source Leakage Current
–––
–––
1.0
µA
gfs
Qg
–––
–––
150
Gate-to-Source Forward Leakage
–––
–––
100
Gate-to-Source Reverse Leakage
–––
–––
-100
VGS = 0V, ID = 250µA
mV/°C Reference to 25°C, ID = 1mA
mΩ VGS = 10V, ID = 27A i
VGS = 4.5V, ID = 22A i
VGS(th)
IGSS
Conditions
Typ. Max. Units
BVDSS
VDS = VGS, ID = 100µA
VDS = 20V, VGS = 0V
VDS = 20V, VGS = 0V, TJ = 125°C
nA
VGS = 20V
VGS = -20V
S
VDS = 13V, ID = 22A
Forward Transconductance
100
–––
–––
Total Gate Charge
–––
31
47
Qgs1
Pre-Vth Gate-to-Source Charge
–––
7.5
–––
Qgs2
Post-Vth Gate-to-Source Charge
–––
4.1
–––
Qgd
Gate-to-Drain Charge
–––
12
–––
ID = 22A
Qgodr
Gate Charge Overdrive
Switch Charge (Qgs2 + Qgd)
–––
7.4
–––
See Fig. 15
Qsw
–––
16
–––
Qoss
RG
Output Charge
Gate Resistance
–––
–––
21
1.2
–––
2.2
td(on)
Turn-On Delay Time
–––
20
–––
VDD = 13V, VGS = 4.5Vi
ID = 22A
VDS = 13V
nC
nC
VGS = 4.5V
VDS = 16V, VGS = 0V
Ω
tr
Rise Time
–––
83
–––
td(off)
Turn-Off Delay Time
–––
17
–––
Clamped Inductive Load
tf
Fall Time
–––
6.7
–––
Ciss
Input Capacitance
–––
3770
–––
See Fig. 17
VGS = 0V
Coss
Output Capacitance
–––
970
–––
Crss
Reverse Transfer Capacitance
–––
500
–––
Min.
Typ. Max. Units
ns
pF
VDS = 15V
ƒ = 1.0MHz
Diode Characteristics
Parameter
IS
Continuous Source Current
–––
–––
3.5
–––
–––
220
(Body Diode)
ISM
Pulsed Source Current
Conditions
MOSFET symbol
A
showing the
integral reverse
VSD
Diode Forward Voltage
–––
–––
1.0
V
p-n junction diode.
TJ = 25°C, IS = 22A, VGS = 0V i
trr
Reverse Recovery Time
–––
21
32
ns
TJ = 25°C, IF = 22A
Qrr
Reverse Recovery Charge
–––
26
39
nC
di/dt = 250A/µs iSee Fig. 18
(Body Diode)g
Notes:
… Repetitive rating; pulse width limited by max. junction temperature.
‡ Pulse width ≤ 400µs; duty cycle ≤ 2%.
2
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IRF6628PbF
Absolute Maximum Ratings
e
e
f
Max.
Units
2.8
1.8
96
270
-40 to + 150
W
Parameter
Power Dissipation
Power Dissipation
Power Dissipation
Peak Soldering Temperature
Operating Junction and
Storage Temperature Range
PD @TA = 25°C
PD @TA = 70°C
PD @TC = 25°C
TP
TJ
TSTG
°C
Thermal Resistance
Parameter
em
km
lm
fm
RθJA
RθJA
RθJA
RθJC
RθJ-PCB
Junction-to-Ambient
Junction-to-Ambient
Junction-to-Ambient
Junction-to-Case
Junction-to-PCB Mounted
Linear Derating Factor
e
Typ.
Max.
Units
–––
12.5
20
–––
1.0
45
–––
–––
1.3
–––
°C/W
0.022
W/°C
Thermal Response ( Z thJA )
100
10
1
D = 0.50
0.20
0.10
0.05
0.02
0.01
τJ
0.1
R1
R1
τJ
τ1
R2
R2
R3
R3
τA
τ1
τ2
τ2
τ3
τ4
τ3
Ci= τi/Ri
Ci= τi/Ri
0.01
0.001
1E-006
0.0001
τ4
τA
τi (sec)
1.2801
0.000322
8.7256
0.164798
21.75
2.2576
13.2511
69
Notes:
1. Duty Factor D = t1/t2
2. Peak Tj = P dm x Zthja + Tc
SINGLE PULSE
( THERMAL RESPONSE )
1E-005
Ri (°C/W)
R4
R4
0.001
0.01
0.1
1
10
100
1000
t1 , Rectangular Pulse Duration (sec)
Fig 3. Maximum Effective Transient Thermal Impedance, Junction-to-Ambient 
Notes:
‰ Used double sided cooling , mounting pad.
Š Mounted on minimum footprint full size board with metalized
‹ Rθ is measured at TJ of approximately 90°C.
back and with small clip heatsink.
ƒ Surface mounted on 1 in. square Cu
(still air).
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‰ Mounted to a PCB with
small clip heatsink (still air)
Š Mounted on minimum
footprint full size board with
metalized back and with small
clip heatsink (still air)
3
IRF6628PbF
1000
1000
100
BOTTOM
TOP
ID, Drain-to-Source Current (A)
ID, Drain-to-Source Current (A)
TOP
VGS
10V
5.0V
4.5V
4.0V
3.5V
3.0V
2.8V
2.5V
100
10
≤60µs PULSE WIDTH
1
Tj = 25°C
BOTTOM
10
2.5V
≤60µs PULSE WIDTH
2.5V
Tj = 150°C
0.1
1
0.1
1
10
100
1000
0.1
Fig 4. Typical Output Characteristics
100
1000
2.0
VDS = 15V
≤60µs PULSE WIDTH
ID = 27A
Typical RDS(on) (Normalized)
ID, Drain-to-Source Current (A)
10
Fig 5. Typical Output Characteristics
1000
100
T J = 150°C
T J = 25°C
T J = -40°C
10
1
V DS, Drain-to-Source Voltage (V)
VDS, Drain-to-Source Voltage (V)
1
0.1
V GS = 10V
1.5
1.0
V GS = 4.5V
0.5
1
2
3
4
5
20
VGS = 0V,
f = 1 MHZ
C iss = C gs + C gd, C ds SHORTED
C rss = C gd
Vgs = 3.5V
Vgs = 4.0V
Vgs = 4.5V
Vgs = 5.0V
Vgs = 10V
18
16
Typical RDS(on) ( mΩ)
C oss = C ds + C gd
10000
Ciss
Coss
1000
20 40 60 80 100 120 140 160
Fig 7. Normalized On-Resistance vs. Temperature
Fig 6. Typical Transfer Characteristics
100000
-60 -40 -20 0
T J , Junction Temperature (°C)
VGS, Gate-to-Source Voltage (V)
C, Capacitance(pF)
VGS
10V
5.0V
4.5V
4.0V
3.5V
3.0V
2.8V
2.5V
Crss
14
TJ = 25°C
12
10
8
6
4
2
0
100
1
10
100
VDS, Drain-to-Source Voltage (V)
Fig 8. Typical Capacitance vs.Drain-to-Source Voltage
4
0
50
100
150
200
250
ID, Drain Current (A)
Fig 9. Typical On-Resistance vs.
Drain Current and Gate Voltage
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IRF6628PbF
1000
ID, Drain-to-Source Current (A)
ISD, Reverse Drain Current (A)
1000
OPERATION IN THIS AREA
LIMITED BY R DS(on)
100
100
10
T J = 150°C
T J = 25°C
T J = -40°C
1
100µsec
10
1msec
10msec
1
0.1
VGS = 0V
T A = 25°C
T J = 150°C
Single Pulse
0.01
0
0.4
0.6
0.8
1.0
0.01
1.2
Fig 10. Typical Source-Drain Diode Forward Voltage
1.00
10.00
100.00
Fig11. Maximum Safe Operating Area
3.0
Typical VGS(th) Gate threshold Voltage (V)
160
140
120
ID, Drain Current (A)
0.10
VDS, Drain-to-Source Voltage (V)
VSD, Source-to-Drain Voltage (V)
100
80
60
40
20
2.5
2.0
ID = 100µA
1.5
50
75
100
125
ID = 1mA
ID = 1.0A
1.0
0.5
0
25
ID = 250µA
-75 -50 -25
150
0
25
50
75 100 125 150
T J , Temperature ( °C )
T C , Case Temperature (°C)
Fig 12. Maximum Drain Current vs. Case Temperature
Fig 13. Typical Threshold Voltage vs. Junction
Temperature
EAS , Single Pulse Avalanche Energy (mJ)
160
ID
7.0A
8.1A
BOTTOM 22A
140
TOP
120
100
80
60
40
20
0
25
50
75
100
125
150
Starting T J , Junction Temperature (°C)
Fig 14. Maximum Avalanche Energy vs. Drain Current
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5
IRF6628PbF
Current Regulator
Same Type as D.U.T.
Id
Vds
50KΩ
Vgs
.2µF
12V
.3µF
+
V
- DS
D.U.T.
Vgs(th)
VGS
3mA
IG
ID
Qgs1 Qgs2
Current Sampling Resistors
Fig 15a. Gate Charge Test Circuit
Qgd
Qgodr
Fig 15b. Gate Charge Waveform
V(BR)DSS
15V
DRIVER
L
VDS
tp
D.U.T
V
RGSG
+
V
- DD
IAS
20V
tp
A
I AS
0.01Ω
Fig 16b. Unclamped Inductive Waveforms
Fig 16a. Unclamped Inductive Test Circuit
LD
VDS
VDS
90%
+
VDD D.U.T
VGS
Pulse Width < 1µs
Duty Factor < 0.1%
Fig 17a. Switching Time Test Circuit
6
10%
VGS
td(on)
tr
td(off)
tf
Fig 17b. Switching Time Waveforms
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IRF6628PbF
D.U.T
Driver Gate Drive
+
ƒ
+
‚
-
„
*
D.U.T. ISD Waveform
Reverse
Recovery
Current
+

RG
•
•
•
•
di/dt controlled by RG
Driver same type as D.U.T.
ISD controlled by Duty Factor "D"
D.U.T. - Device Under Test
VDD
P.W.
Period
VGS=10V
Circuit Layout Considerations
• Low Stray Inductance
• Ground Plane
• Low Leakage Inductance
Current Transformer
-
D=
Period
P.W.
Body Diode Forward
Current
di/dt
D.U.T. VDS Waveform
Diode Recovery
dv/dt
Re-Applied
Voltage
+
Body Diode
VDD
Forward Drop
Inductor
Current
Inductor Curent
-
Ripple ≤ 5%
ISD
* VGS = 5V for Logic Level Devices
Fig 18. Diode Reverse Recovery Test Circuit for N-Channel
HEXFET® Power MOSFETs
DirectFET™ Board Footprint, MX Outline
(Medium Size Can, X-Designation).
Please see DirectFET application note AN-1035 for all details regarding the assembly of DirectFET.
This includes all recommendations for stencil and substrate designs.
G = GATE
D = DRAIN
S = SOURCE
D
D
S
G
S
D
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D
7
IRF6628PbF
DirectFET™ Outline Dimension, MX Outline
(Medium Size Can, X-Designation).
Please see DirectFET application note AN-1035 for all details regarding the assembly of DirectFET. This includes
all recommendations for stencil and substrate designs.
DIMENSIONS
METRIC
CODE
A
B
C
D
E
F
G
H
J
K
L
M
R
P
MIN
6.25
4.80
3.85
0.35
0.68
0.68
1.38
0.80
0.38
0.88
2.28
0.616
0.020
0.08
MAX
6.35
5.05
3.95
0.45
0.72
0.72
1.42
0.84
0.42
1.01
2.41
0.676
0.080
0.17
IMPERIAL
MIN
0.246
0.189
0.152
0.014
0.027
0.027
0.054
0.032
0.015
0.035
0.090
0.0235
0.0008
0.003
MAX
0.250
0.201
0.156
0.018
0.028
0.028
0.056
0.033
0.017
0.039
0.095
0.0274
0.0031
0.007
DirectFET™ Part Marking
8
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IRF6628PbF
DirectFET™ Tape & Reel Dimension
(Showing component orientation).
NOTE: Controlling dimensions in mm
Std reel quantity is 4800 parts. (ordered as IRF6628TRPBF). For 1000 parts on 7"
reel, order IRF6628TR1PBF
STANDARD OPTION
METRIC
CODE
MAX
MIN
A
330.0
N.C
B
20.2
N.C
C
12.8
13.2
D
1.5
N.C
E
100.0
N.C
F
N.C
18.4
G
12.4
14.4
H
11.9
15.4
REEL DIMENSIONS
(QTY 4800)
TR1 OPTION
IMPERIAL
METRIC
MIN
MAX
MIN
MAX
12.992
N.C
177.77 N.C
0.795
N.C
19.06
N.C
0.504
13.5
0.520
12.8
0.059
1.5
N.C
N.C
3.937
58.72
N.C
N.C
N.C
N.C
0.724
13.50
0.488
11.9
0.567
12.01
0.469
11.9
0.606
12.01
(QTY 1000)
IMPERIAL
MIN
MAX
6.9
N.C
0.75
N.C
0.53
0.50
0.059
N.C
2.31
N.C
N.C
0.53
0.47
N.C
0.47
N.C
LOADED TAPE FEED DIRECTION
CODE
A
B
C
D
E
F
G
H
DIMENSIONS
IMPERIAL
METRIC
MIN
MAX
MIN
MAX
0.311
0.319
7.90
8.10
0.154
0.161
3.90
4.10
0.469
11.90
0.484
12.30
0.215
5.45
0.219
5.55
0.201
5.10
0.209
5.30
0.256
0.264
6.50
6.70
0.059
1.50
N.C
N.C
0.059
1.50
0.063
1.60
Data and specifications subject to change without notice.
This product has been designed and qualified for the Consumer market.
Qualification Standards can be found on IR’s Web site.
IR WORLD HEADQUARTERS: 233 Kansas St., El Segundo, California 90245, USA Tel: (310) 252-7105
TAC Fax: (310) 252-7903
Visit us at www.irf.com for sales contact information.07/06
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9