IRF IR1150STR

Data Sheet No. PD60230 revAa
IR1150S(PbF)
IR1150IS(PbF)
µPFC ONE CYCLE CONTROL PFC IC
Features
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PFC with IR proprietary “One Cycle Control”
Continuous conduction mode (CCM) boost type PFC
No line voltage sense required
Programmable switching frequency (50kHz-200kHz)
Programmable output overvoltage protection
Brownout and output undervoltage protection
Cycle-by-cycle peak current limit
Soft start
User initiated micropower “Sleep Mode”
Open loop protection
Maximum duty cycle limit of 98%
User programmable fixed frequency operation
Min. off time of 150-350ns over freq range
VCC under voltage lockout
Internally clamped 13V gate drive
Fast 1.5A peak gate drive
Micropower startup (<200 µA)
Latch immunity and ESD protection
Parts also available Lead-Free
Description
Package
The µPFC IR1150 is a power factor correction (PFC) control IC designed to operate in continuous
conduction mode (CCM) over a wide range input line voltages. The IR1150 is based on IR's
proprietary "One Cycle Control" (OCC) technique providing a cost effective solution for PFC.
The proprietary control method allows major reductions in component count, PCB area and
design time while delivering the same high system performance as traditional solutions.
The IC is fully protected and eliminates the often noise sensitive line voltage sensing requirements
of existing solutions.
The IR1150 features include programmable switching frequency, programmable dedicated
8-Lead SOIC
over voltage protection, soft start, cycle-by-cycle peak current limit, brownout, open loop,
UVLO and micropower startup current.
In addition, for low standby power requirements (Energy Star, 1W Standby, Blue Angel, etc.), the IC can be driven into sleep
mode with total current consumption below 200µA, by pulling the OVP pin below 0.62V.
IR1150 Application Diagram
+
V OUT
BRIDGE
-
AC LI NE
V cc
AC NEUTRAL
+
IR1150
1
2
3
4
COM
GATE
FREQ
VCC
ISNS
VFB
OVP
COMP
8
7
6
5
+
RTN
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1
IR1150S/IR1150IS(PbF)
Absolute Maximum Ratings
Absolute maximum ratings indicate sustained limits beyond which damage to the device may occur. All voltages are
absolute voltages referenced to COM. Thermal resistance and power dissipation are measured under board mounted and
still air conditions.
Parameters
Symbols
Min.
Max.
VCC voltage
V CC
-0.3
22
V
Freq. voltage
VFREQ.
-0.3
10.5
V
ISNS voltage
VISNS
-10
VFB voltage
V FB
-0.3
10.5
V
COMP voltage
VCOMP
-0.3
10
V
Gate voltage
VGATE
-0.3
18
V
Continuous gate current
IGATE
-5
5
mA
Max peak gate current
IGATEPK
-1.5
1.5
A
Junction temperature
TJ
-40
150
oC
Storage temperature
TS
-55
150
oC
Thermal resistance
RθJA
—
128
° C/W
SOIC-8
Package power dissipation
PD
—
675
mW
SOIC-8 TAMB = 25oC
VESD
—
2
ESD protection
3
Units Remarks
Not internally clamped
V
kV
Human body model*
Recommended Operating Conditions
Recommended operating conditions for reliable operation with margin
Parameters
Symbols
Supply voltage
V CC
Min. Typ.
15
18
Max.
20
Units
Remarks
Junction temperature
TJ
-25
—
125
°C
Ambient temperature
TA
0
—
70
°C
IR1150S
Ambient temperature
TA
-25
—
85
°C
IR1150IS
Switching frequency
FSW
50
—
200
V
kHz
Electrical Characteristics
The electrical characteristics involve the spread of values guaranteed within the specified supply voltage and junction
temperature range TJ from – 25 ° C to 125°C. Typical values represent the median values, which are related to 25°C. If not
otherwise stated, a supply voltage of VCC =15V is assumed for test condition
Supply Section
Parameters
VCC turn-on threshold
VCC turn-off threshold
Symbols
Min. Typ.
Max.
Units
VCC ON
VCC UVLO
12.2
12.7
13.2
V
10.2
10.7
11.2
V
VCC HYST
1.8
—
2.2
V
Remarks
(under voltage lock out)
VCC turn-off hysteresis
*Per EIA/JESD22-A114-B (discharging a 100pF capacitor through a 1.5KΩ series resistor)
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2
IR1150S/IR1150IS(PbF)
Electrical Characteristics cont.
The electrical characteristics involve the spread of values guaranteed within the specified supply voltage and junction
temperature range TJ from – 25° C to 125°C. Typical values represent the median values, which are related to 25°C. If not
otherwise stated, a supply voltage of VCC =15V is assumed for test condition.
Parameters
Operating current
Symbols
ICC
Startup current
ICCSTART
Sleep current
Sleep mode threshold
ISLEEP
VSLEEP
Min. Typ.
Max.
Units
Remarks
—
18
22
mA
CLOAD=1nF fSW=200kHZ
—
36
40
mA
CLOAD=10nF fSW=200kHZ
—
8
10
mA
Standby mode - inactive gate
Internal oscillator running
—
—
175
uA
VCC =V CC ON -0.1V
—
0.565
125
0.615
200
0.665
uA
VOVP<0.5V (typ),VCC =15V
VCC =15V
Min. Typ.
Max.
Units
V
Oscillator Section
Parameters
Switching frequency
Symbols
Remarks
f SW
50
—
200
kHz
RSET = 165kΩ -37kΩ approx.
fSW ACC
—
—
5
%
TA = 25oC
Voltage stability
VSTAB
—
0.2
3
%
13V <VCC <20V
Temperature stability
TSTAB
—
2
—
%
-25oC ≤TJ≤125oC
Initial accuracy
Total variation
fVT
—
10
—
%
Line & temperature
FSTABLT
—
0.1
0.5
%
TAMB = 125 oC, 1000Hrs
Maximum duty cycle
DMAX
93
—
98
%
fSW=200kHz
Minimum duty cycle
DMIN
—
—
0
%
200
300
400
ns
Min. Typ.
Max.
Long term stability
Minimum off time
Toffmin
fSW=50kHz to 200kHz
Protection Section
Parameters
Symbols
Units
Remarks
Open loop protection (OLP)
Vfb threshold
VOLP
17
VOUV
49
19
21
%VREF
53
%VREF
Output under voltage
protection (OUV)
Output over voltage
protection (OVP)
VOVP
104
105.5
107
%VREF
OVP hysteresis
—
350
450
550
mV
VISNS
-1.11
-1.04
-0.96
Peak current limit protection
(IPKLMT) ISNS voltage threshold
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51
Brown out protection
V
3
IR1150S/IR1150IS(PbF)
Internal Voltage Reference Section
Parameters
Symbols
Min. Typ.
Max.
Units
Remarks
7.0
7.1
V
TA = 25oC
—
12
25
mV
13.5V <VCC < 20V
—
0.4
—
%
-25oC ≤TAMB≤125oC
6.8
—
7.1
V
Over V CC and Tj ranges
Reference voltage
V REF
6.9
Line regulation
RREG
Temp stability
TSTAB
Total variation
∆VTOT
Voltage Error Amplifier Section
Parameters
Symbols
Min. Typ.
Max.
Units
30
40
55
µS
±40
65
90
µA
IOVEA
30
20
t ss
—
40
—
ms
VCOMP FLT
—
1.2
1.5
V
@ 1mA (max) initial
V
@ 25µA steady state
Source/sink current
Soft start delay time
45
µA
(calculated)
VCOMP voltage (fault)
TAMB = 25oC
-25oC ≤TAMB≤125oC
RGAIN=1kΩ, CZERO=0.33µF
CPOLE=0.01µF, fXO=28Hz
0.2
Effective VCOMP voltage
Remarks
-25oC ≤TAMB≤125oC
gm
Transconductance
VCOMP EFF
6.05
V
Input bias current
IIB
—
-0.2
-0.5
µA
Open loop bandwidth
BW
—
1
—
MHz
Input offset voltage temp
coefficient
TCIOV
—
—
10
µV/oC
Common mode rejection ratio
CMRR
—
100
—
dB
Output low voltage
VOL
—
—
0.5
V
Output high voltage
V OH
5.71
6.15
6.8
V
VCOMP start voltage
VCOMP START
300
500
700
mV
VFB=0V, -25oC ≤TAMB≤125oC
Current Amplifier Section
Parameters
DC gain
Corner frequency
Symbols
g DC
fC
Min. Typ.
—
2.5
Max.
Units
—
V/V
200
—
280
kHz
Input offset voltage
V IO
—
1
4
mV
ISNS bias current
Input offset voltage temp
coefficient
ΙIB
—
200
300
µA
TCIOV
—
—
10
µV/oC
—
230
100
350
—
450
dB
ns
600
ns
Common mode rejection ratio
Blanking time
CMRR
TBLANK
150
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Remarks
VFB=0V,-25oC ≤TAMB≤125oC
TAMB = 25oC
-25oC ≤TAMB≤125oC
4
IR1150S/IR1150IS(PbF)
Gate Driver Section
Parameters
Symbols
Min. Typ.
Max.
Units
Remarks
Gate low voltage
VGLO
—
1.2
1.5
V
IGATE=200mA
Gate high voltage
VGTH
—
13
18
V
V CC =20V
Gate high voltage
VGTH
9.5
—
—
V
VCC =11.5V
—
20
—
ns
CLOAD = 1nF, VCC=16V
—
70
—
ns
CLOAD = 10nF, VCC=16V
—
20
—
ns
CLOAD = 1nF, VCC=16V
—
70
—
ns
CLOAD = 10nF, VCC=16V
IOPK
1.5
—
—
A
VG fault
—
—
1.8
V
CLOAD = 10nF, VCC=16V
IGATE=20mA
Rise time
Fall time
Out peak current
Gate voltage @ fault
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tf
5
IR1150S/IR1150IS(PbF)
Block Diagram
BIAS &
REFERENCES
UVLO
7
VCC
2
FREQ
8
GATE
1
COM
SLEEP
0.5V
OVP/EN 4
1.055VREF
CLOCK
1.0V
I SNS 3
MAX
DUTY CYCLE
-
LIMIT
+
Vm
VREF
VFB
6
COMP
5
S
Q
R
Q
FAULT
RESET
FAULT
FAULT PROTECTION
OPEN LOOP PROTECTION
OUTPUT UNDER VOLTAGE
FAULT
Lead Assignments & Definitions
Lead Assignment
Pin#
Symbol
1
COM
Ground
2
FREQ
Frequency Set
IR1150S
COM
1
8
Description
GATE
3
I SNS
Current Sense
FREQ
2
7
V CC
4
OVP/EN
I SNS
3
6
VFB
5
COMP
OVP/EN
4
5
COMP
6
VFB
Output Voltage Sense
7
VCC
IC Supply Voltage
8
GATE
Gate Drive Output
8 LEAD SOIC
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Overvoltage Fault Detect / Enable
Voltage Loop Compensation
6
IR1150S/IR1150IS(PbF)
General Description
The µPFC IR1150 is intended for boost converters
for power factor correction operating at a fixed
frequency in continuous conduction mode. The IC
operates with two loops; an inner current loop and
an outer voltage loop. The inner current loop is fast,
reliable and does not require sensing of the input
voltage in order to create a current reference.
This inner current loop sustains the sinusoidal profile
of the average input current based on the dependency
of the pulse width modulator duty cycle on the input
line voltage in order to determine the analogous input
line current. Thus, the current loop uses the
embedded input voltage signal to control the average
input current to follow the input voltage.
The IR1150 enables excellent THD performance. In
light load conditions, a small distortion occurs at zerocrossing due to the finite boost inductance but this is
negligible and well within EN61000-3-2 Class D
specifications.
The outer voltage loop controls the DC bus voltage.
This voltage is fed into the voltage error amplifier to
control the slope of the integrator ramp and sets the
amplitude of the average input current.
The two loops combine to control the amplitude,
phase and shape of the input current, with respect to
the input voltage, giving near-unity power factor.
The IC is designed for robust operation and provides protection from system level over current, over
voltage, under voltage, and brownout conditions.
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IC Supply
The UVLO circuit monitors the VCC pin and maintains
the gate drive signal inactive until the VCC pin voltage
reaches the UVLO turn on threshold, (VCC ON). As soon
as the VCC voltage exceeds this threshold, provided
that the VFB pin voltage is greater than 20%VREF, the
gate drive will begin switching (under Soft Start) and
increase the pulse width to its maximum value as
demanded by the output voltage error amplifier. If
the voltage on the VCC pin falls below the UVLO turn
off threshold, (VCC UVLO), the IC turns off, gate drive is
terminated, and the turn on threshold must again be
exceeded in order to re-start the process and move
into Soft Start mode.
Soft Start
Soft Start controls the rate of rise of the output voltage
error amplifier in order to obtain a linear control of
the increasing duty cycle as a function of time. The
Soft Start time is controlled by voltage error amplifier
compensation components selected, and is user
programmable based on desired loop crossover
frequency.
Frequency Select
The switching frequency of the IC is programmable
by an external resistor at the FREQ pin. The design
incorporates min/max restrictions such that the
minimum and maximum operating frequency fall
within the range of 50-200kHz.
Gate Drive
The gate drive is a totem pole driver with 1.5A
capability. If higher currents are required, additional
external drivers can be used.
7
IR1150S/IR1150IS(PbF)
Detailed Pin Description
COM: Ground
This is the ground potential pin of the integrated control circuit. All internal devices are referenced to this
point.
VFB: Output Voltage Feedback
The output voltage of the boost converter is sensed
via a resistive divider and fed into this pin, which is
the inverting input of the output voltage error amplifier.
The impedance of the divider string must be low
enough so as to not introduce substantial error due
to the input bias currents of the amplifier, yet high
enough so as to minimize power dissipation. A typical
value of external divider impedance is 1MΩ.
The error amplifier is a transconductance type which
yields high output impedance, thus increasing the
noise immunity of the error amplifier output. This also
eliminates input divider string interaction with
compensation feedback capacitors and reducing the
loading of divider string due to a low impedance
output of the amplifier.
COMP: Voltage Loop Compensation
External circuitry from this pin to ground
compensates the system voltage loop and soft start
time. This is the output of the voltage error amplifier.
This pin will be discharged via internal resistance
when a fault mode occurs.
GATE: Gate Drive Output
This is the gate drive output of the IC. Drive voltage is
internally limited and provides ±1.5A peak with
matched rise and fall times.
FREQ: Frequency Set
This is the user programmable frequency pin. An
external resistor from this pin to the COM pin programs the frequency. The operational switching frequency range for the device is 50kHz – 200kHz.
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ISNS: Current Sense input
This pin is the inverting Current Sense Input & Peak
Current Limit. The voltage at this pin is the negative
voltage drop, sensed across the system current
sense resistor, representing the inductor current.
This voltage is fed into the Peak Current Limit protection comparator with threshold arond -1V. This protection circuit incorporates a leading edge blanking
circuit following the comparator to improve noise
immunity of the protection process.
The current sense signal is also fed into the current
sense amplifier. The signal is amplified, filtered of
high frequency noise and then injected into a summing node where it is subtracted from the compensation voltage VCOMP.
The signal on this pin must be previously filtered
with an RC cell to provide additional noise immunity.
The input impedance of this pin is 5kΩ.
VCC: Supply Voltage
This is the supply voltage pin of the IC and it is
monitored by the under voltage lockout circuit. It is
possible to turn off the IC by pulling this pin below
the minimum turn off threshold voltage, without
damage to the IC.
To prevent noise problems, a bypass ceramic
capacitor connected to VCC and COM should be
placed as close as possible to the IR1150S.
This pin is not internally clamped, therefore damage
will occur if the maximum voltage is exceeded.
OVP/EN: Over Voltage Protection / Enable
This pin is the input to the over voltage protection
comparator the threshold of which is internally programmed to 105.5% of VREF.
A resistive divider feeds this pin from the output voltage to COM and inhibits the gate drive whenever the
threshold is exceeded. Normal operation resumes
when the voltage level on this pin decreases to below the pin threshold.
This pin is also used to activate “sleep” mode by
pulling the voltage level below 0.62V (typ).
8
IR1150S/IR1150IS(PbF)
Operating States
UVLO Mode
Normal Mode
The IC remains in the UVLO condition until the voltage
on the VCC pin exceeds the VCC turn on threshold
voltage, VCC ON.
During the time the IC remains in the UVLO state,
the gate drive circuit is inactive and the IC draws a
quiescent current of ICC START. The UVLO mode is
accessible from any other state of operation whenever
the IC supply voltage condition of VCC < VCC UVLO
occurs.
The IC enters normal operating mode once the soft
start transition has been completed. At this point the
gate drive is switching and the IC draws a maximum
of ICC from the supply voltage source. The device
will initiate another soft start sequence in the event
of a shutdown due to a fault, which activates the
protection circuitry, or if the supply voltage drops below
the UVLO turn off threshold of VCC UVLO.
Standby Mode
The IC is in this state if the supply voltage has
exceeded VCC ON and the VFB pin voltage is less
than 20% of VREF . The oscillator is running and all
internal circuitry is biased in this state but the gate is
inactive. This state is accessible from any other state
of operation except OVP. The IC enters this state
whenever the VFB pin voltage has decreased to 50%
of VREF when operating in normal mode or during a
peak current limit fault condition, or 20% VREF when
operating in soft start mode.
Soft Start Mode
Fault Protection Mode
The fault mode will be activated when any of the
protection circuits are activated. The IC protection
circuits include Supply Voltage Under Voltage Lockout
(UVLO), Output Over Voltage Protection (OVP), Open
Loop Protection (OLP), Output Undervoltage
Protection (OUV), and Peak Current Limit Protection
(IPK LIMIT).
Sleep Mode
The sleep mode is initiated by pulling the OVP pin
below 0.62V (typ). In this mode the IC draws a very
low quiescent supply current.
This state is activated once the VCC voltage has
exceeded V CCON and the V FB pin voltage has
exceeded 20% of VREF.
The soft start time, which is defined as the time
required for the duty cycle to linearly increase from
zero to maximum, is dependent upon the values
selected for compensation of the voltage loop pin
COMP to pin COM. Throughout the soft start cycle,
the output of the voltage error amplifier (pin COMP)
charges through the compensation network. This
forces a linear rise of the voltage at this node which
in turn forces a linear increase in the gate drive duty
cycle from 0. This controlled duty cycle reduces
system component stress during start up conditions
as the input current amplitude is increasing linearly.
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9
IR1150S/IR1150IS(PbF)
AC POWER ON
Gate Inactive
Oscillator Inactive
STATE & TRANSITIONS
DIAGRAM
UVLO
VCC < VCCon
Gate Inactive
Oscillator Inactive
I CC MAX = 200uA
Sleep
VOVP <0.7V
Gate Inactive
Oscillator Inactive
I CC max = 200uA
VCC > VCCon
VCC < VCC UVLO
STAND- BY
VFB < 20% VREF
Gate Inactive
Oscillator Active
I CC MAX = 4mA
VOVP >0.7V
VOVP <0.7V
VFB > 20%VREF
VFB < 50%VREF
VFB < 20% VREF
V CC < VCC UVLO
I PK LIMIT
V CC < VCC UVLO
FAULT
VISNS < -1.0V
VISNS < -1.0V
Present PulseTerminated
Oscillator Active
VISNS > -1.0V
SOFT START
VFB < 80% VREF
Gate Active
Oscillator Active
Pulse Width Increasing
0- 97 % Duty Cycle
VOVP <0.7V
VFB > 80%VREF
V CC < VCC UVLO
VISNS < -1.0V
VISNS > -1.0V
NORMAL
Gate Active
Oscillator Active
I CC MAX = 28 mA
VFB < 50%VREF
VOVP <0.7V
VOVP < 101% VREF
VOVP > 105%VREF
OVP FAULT
VOVP > 105%VREF
Gate Inactive
Oscillator Active
VOVP <0.7V
V CC < VCC UVLO
VOVP <0.7V
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10
100
13 V
10
12 V
VVCC
Thresholds
UVLO
Thresholds
CC UVLO
I SUPPLY
IR1150S/IR1150IS(PbF)
1
0.1
11 V
VCCONON
VCC
10 V
VCCUVLO
UVLO
VCC
0.01
5V
10 V
15 V
20 V
Supply voltage
9V
-50 °C
25 V
300 kHz
150 °C
250 kHz
Switching Frequency (typ.) - f SW
250 kHz
Switching Frequency
50 °C
100 °C
Temperature
Fig. 2 - Under Voltage Lockout vs.
Temperature
Fig.1 - Supply Current
200 kHz
150 kHz
100 kHz
50 kHz
0 kHz
0k
50 k
100 k
150 k
Programming Resistor
Fig. 3 - Oscillator Frequency vs.
Programming Resistor
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0 °C
200 k
200 kHz
RF
RF=37k
R
RF=78k
F
150 kHz
R
RF=165k
F
100 kHz
50 kHz
0 kHz
-50 °C
0 °C
50 °C
100 °C
Temperature
150 °C
Fig. 4 - Oscillator Frequency vs.
Temperature
11
IR1150S/IR1150IS(PbF)
50 uS
EA Transconductance (typ.) - g m
Reference Voltage (typ.) - VREF
7.10 V
7.05 V
7.00 V
6.95 V
6.90 V
6.85 V
45 uS
40 uS
35 uS
30 uS
-50 °C
0 °C
50 °C
100 °C
Temperature
150 °C
-50 °C
Fig. 5 - Reference Voltage
Current Sense DC Gain
Error Amplifier Current Source/Sink
150 °C
2.70
50 uA
40 uA
IO (source)
30 uA
IO (sink)
20 uA
10 uA
2.60
2.50
2.40
2.30
0 °C
50 °C
100 °C
Temperature
Fig.7 - Voltage Error Amplifier
Source/Sink Current
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50 °C
100 °C
Temperature
Fig. 6 - Voltage Error Amplifier
Transconductance
60 uA
-50 °C
0 °C
150 °C
-50 °C
0 °C
50 °C
100 °C
Temperature
150 °C
Fig. 8 - Current Sense Amplifier DC Gain
12
IR1150S/IR1150IS(PbF)
IR1150 Timing Diagrams
IC Supply Voltage (VCC )
Vcc
13.0V (typ)
11.0V (typ)
t
UVLO
NORMAL
UVLO
Vcc Under Voltage Lockout
106% VREF
Feedback Voltage (VFB)
100% VREF
82% VREF
51% VREF
19% VREF
t
OLP
SOFT START
OVP
NORMAL
OUV
OLP
Output Protection
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13
IR1150S/IR1150IS(PbF)
Case outline
D
DIM
B
5
A
FOOTPRINT
8
6
7
6
5
H
E
1
2
3
0.25 [.010]
4
A
6.46 [.255]
MIN
.0532
.0688
1.35
1.75
A1 .0040
6X
e
e1
.0098
0.10
0.25
.013
.020
0.33
0.51
c
.0075
.0098
0.19
0.25
D
.189
.1968
4.80
5.00
E
.1497
.1574
3.80
4.00
e
.050 BASIC
0.25 [.010]
A1
0.635 BASIC
H
.2284
.2440
5.80
6.20
K
.0099
.0196
0.25
0.50
L
.016
.050
0.40
1.27
y
0°
8°
0°
8°
y
0.10 [.004]
8X L
8X c
7
C A B
NOTES:
1. DIMENSIONING & TOLERANCING PER ASME Y14.5M-1994.
5 DIMENSION DOES NOT INCLUDE MOLD PROTRUSIONS.
MOLD PROTRUSIONS NOT TO EXCEED 0.15 [.006].
2. CONTROLLING DIMENSION: MILLIMETER
6 DIMENSION DOES NOT INCLUDE MOLD PROTRUSIONS.
MOLD PROTRUSIONS NOT TO EXCEED 0.25 [.010].
3. DIMENSIONS ARE SHOWN IN MILLIMETERS [INC HES].
4. OUTLINE CONFORMS TO JEDEC OUTLINE MS-012AA.
8-Lead SOIC
www.irf.com
.025 BASIC
1.27 BASIC
K x 45°
A
C
8X b
8X 1.78 [.070]
MAX
b
e1
3X 1.27 [.050]
MILLIMETERS
MAX
A
8X 0.72 [.028]
INCHES
MIN
7 DIMENSION IS THE LENG TH OF LEAD FOR SOLDERING TO
A SUBSTRATE.
01-6027
01-0021 11 (MS-012AA)
14
IR1150S/IR1150IS(PbF)
Tape & Reel Information
Dimensions are shown in millimeters (inches)
TERMINAL NUMBER 1
12.3 ( .484 )
11.7 ( .461 )
8.1 ( .318 )
7.9 ( .312 )
FEED DIRECTION
NOTES:
1. OUTLINE CONFORMS TO EIA-481 & EIA-541.
2. CONTROLLING DIMENSION : MILLIMETER.
330.00
(12.992)
MAX.
14.40 ( .566 )
12.40 ( .488 )
NOTES :
1. CONTROLLING DIMENSION : MILLIMETER.
2. OUTLINE CONFORMS TO EIA-481 & EIA-541.
www.irf.com
15
IR1150S/IR1150IS(PbF)
PART MARKING INFORMATION
?
?
P
( )
MARKING CODE
Lead Free Released
Non-Lead Free
Released
LOT CODE
ORDER INFORMATION
Basic Part
8-Lead SOIC IR1150STR order IR1150STR
8-Lead SOIC IR1150ISTR order IR1150ISTR
Lead-free Part
8-Lead SOIC IR1150S order IR1150STRPbF
8-Lead SOIC IR1150ISTR order IR1150ISTRPbF
The IR1150S(PbF) has been designed and qualified for the Consumer Market
The IR1150IS(PbF) has been designed and qualified for the Industrial Market
Qualification Standards can be found on IR’s Web site.
WORLD HEADQUARTERS: 233 Kansas Street, El Segundo, California 90245 Tel: (310) 252-7105
http://www.irf.com/ Data and specifications subject to change without notice.
6/13/2005
www.irf.com
16