PD - 96139A IRFH7923PbF HEXFET® Power MOSFET Applications l l High Frequency Point-of-Load Synchronous Buck Converter for Applications in Neworking & Computing Systems Optimized for Control FET Applications VDSS 30V RDS(on) max Qg 8.7m @VGS = 10V 8.7nC : Benefits l l l l l l l l Very low RDS(ON) at 4.5V VGS Low Gate Charge Fully Characterized Avalanche Voltage and Current 100% Tested for RG Lead-Free (Qualified up to 260°C Reflow) RoHS compliant (Halogen Free) Low Thermal Resistance Large Source Lead for more reliable Soldering S S S D D G D D PQFN Absolute Maximum Ratings Max. Units VDS Drain-to-Source Voltage Parameter 30 V VGS ± 20 ID @ TA = 25°C Gate-to-Source Voltage Continuous Drain Current, VGS @ 10V ID @ TA = 70°C Continuous Drain Current, VGS @ 10V 12 ID @ TC = 25°C Continuous Drain Current, VGS @ 10V Pulsed Drain Current 120 3.1 IDM g g 15 33 c PD @TA = 25°C Power Dissipation PD @TA = 70°C Power Dissipation TJ Linear Derating Factor Operating Junction and TSTG Storage Temperature Range A W 2 g 0.03 -55 to + 150 W/°C °C Thermal Resistance Parameter f RθJC Junction-to-Case RθJA Junction-to-Ambient g Typ. Max. Units ––– 8.3 °C/W ––– 40 Notes through are on page 9 www.irf.com 1 06/18/08 IRFH7923PbF Static @ TJ = 25°C (unless otherwise specified) Parameter Min. Typ. Max. Units Conditions BVDSS ∆ΒVDSS/∆TJ Drain-to-Source Breakdown Voltage Breakdown Voltage Temp. Coefficient 30 ––– ––– 0.024 ––– ––– V VGS = 0V, ID = 250µA V/°C Reference to 25°C, ID = 1mA RDS(on) Static Drain-to-Source On-Resistance ––– ––– 6.8 9.3 8.7 11.9 mΩ VGS(th) ∆VGS(th) Gate Threshold Voltage Gate Threshold Voltage Coefficient 1.35 ––– 1.8 -5.8 2.35 V VDS = VGS, ID = 25µA ––– mV/°C IDSS Drain-to-Source Leakage Current ––– ––– ––– ––– 1.0 150 µA VDS = 24V, VGS = 0V VDS = 24V, VGS = 0V, TJ = 125°C IGSS Gate-to-Source Forward Leakage Gate-to-Source Reverse Leakage ––– ––– ––– ––– 100 -100 nA VGS = 20V VGS = -20V gfs Qg Forward Transconductance Total Gate Charge 29 ––– ––– 8.7 ––– 13 S VDS = 15V, ID = 12A Qgs1 Qgs2 Pre-Vth Gate-to-Source Charge Post-Vth Gate-to-Source Charge ––– ––– 1.8 1.1 ––– ––– Qgd Qgodr Gate-to-Drain Charge Gate Charge Overdrive Switch Charge (Qgs2 + Qgd) ––– ––– 2.7 3.1 ––– ––– Output Charge ––– ––– 3.8 4.9 ––– ––– RG td(on) Gate Resistance Turn-On Delay Time ––– ––– 2.0 7.1 3.0 ––– tr td(off) tf Rise Time Turn-Off Delay Time Fall Time ––– ––– ––– 8.7 8.6 4.9 ––– ––– ––– Ciss Coss Input Capacitance Output Capacitance ––– ––– 1095 235 ––– ––– Crss Reverse Transfer Capacitance ––– 110 ––– Qsw Qoss nC nC VGS = 10V, ID = 15A VGS = 4.5V, ID = 12A e e VDS = 15V VGS = 4.5V ID = 12A See Fig.17 & 18 VDS = 16V, VGS = 0V Ω VDD = 15V, VGS = 4.5V ns pF ID = 12A RG=1.8Ω See Fig.15 VGS = 0V VDS = 15V ƒ = 1.0MHz Avalanche Characteristics EAS Parameter Single Pulse Avalanche Energy IAR Avalanche Current c d Typ. ––– Max. 27 Units mJ ––– 12 A Diode Characteristics Parameter IS Continuous Source Current ISM (Body Diode) Pulsed Source Current VSD Min. Typ. Max. Units ––– ––– Conditions MOSFET symbol 3.9 A D showing the integral reverse G (Body Diode) Diode Forward Voltage ––– ––– 120 ––– ––– 1.0 V p-n junction diode. TJ = 25°C, IS = 12A, VGS = 0V trr Qrr Reverse Recovery Time Reverse Recovery Charge ––– ––– 12 11 18 17 ns nC TJ = 25°C, IF = 12A, VDD = 15V di/dt = 300A/µs ton Forward Turn-On Time 2 c S e e Intrinsic turn-on time is negligible (turn-on is dominated by LS+LD) www.irf.com IRFH7923PbF 1000 1000 ID, Drain-to-Source Current (A) 100 BOTTOM 10 TOP ID, Drain-to-Source Current (A) TOP VGS 10V 5.0V 4.5V 3.5V 3.0V 2.7V 2.5V 2.3V 100 1 2.3V 0.1 BOTTOM 10 2.3V 1 ≤60µs PULSE WIDTH ≤60µs PULSE WIDTH Tj = 25°C 0.01 0.1 1 Tj = 150°C 0.1 10 0.1 100 1 10 100 V DS, Drain-to-Source Voltage (V) V DS, Drain-to-Source Voltage (V) Fig 2. Typical Output Characteristics Fig 1. Typical Output Characteristics 1000 2.0 RDS(on) , Drain-to-Source On Resistance (Normalized) ID, Drain-to-Source Current (A) VGS 10V 5.0V 4.5V 3.5V 3.0V 2.7V 2.5V 2.3V 100 T J = 150°C 10 T J = 25°C 1 VDS = 15V ≤60µs PULSE WIDTH 0.1 1 2 3 4 5 VGS, Gate-to-Source Voltage (V) Fig 3. Typical Transfer Characteristics www.irf.com 6 ID = 15A VGS = 10V 1.5 1.0 0.5 -60 -40 -20 0 20 40 60 80 100 120 140 160 T J , Junction Temperature (°C) Fig 4. Normalized On-Resistance Vs. Temperature 3 IRFH7923PbF 10000 14.0 VGS = 0V, f = 1 MHZ C iss = C gs + C gd, C ds SHORTED C rss = C gd VGS, Gate-to-Source Voltage (V) ID= 12A C, Capacitance (pF) C oss = C ds + C gd Ciss 1000 Coss Crss 100 12.0 VDS= 24V VDS= 15V 10.0 8.0 6.0 4.0 2.0 10 0.0 1 10 100 0 VDS, Drain-to-Source Voltage (V) 15 20 25 Fig 6. Typical Gate Charge Vs. Gate-to-Source Voltage 1000 ID, Drain-to-Source Current (A) 1000 ISD, Reverse Drain Current (A) 10 QG, Total Gate Charge (nC) Fig 5. Typical Capacitance Vs. Drain-to-Source Voltage OPERATION IN THIS AREA LIMITED BY R DS(on) 100 100 T J = 150°C 10 T J = 25°C 1.00 100µsec 1msec 10 10msec 1 T A = 25°C Tj = 150°C Single Pulse VGS = 0V 0.1 0.10 0.2 0.4 0.6 0.8 1.0 1.2 VSD, Source-to-Drain Voltage (V) Fig 7. Typical Source-Drain Diode Forward Voltage 4 5 0 1 10 100 VDS, Drain-to-Source Voltage (V) Fig 8. Maximum Safe Operating Area www.irf.com IRFH7923PbF 16 2.2 VGS(th) , Gate Threshold Voltage (V) ID, Drain Current (A) 14 12 10 8 6 4 2 2.0 1.8 1.4 1.2 0 25 50 75 100 125 ID = 25µA 1.6 1.0 150 -75 -50 -25 T J , Junction Temperature (°C) 0 25 50 75 100 125 150 T J , Temperature ( °C ) Fig 9. Maximum Drain Current Vs. Ambient Temperature Fig 10. Threshold Voltage Vs. Temperature Thermal Response ( Z thJA ) °C/W 100 D = 0.50 10 0.20 0.10 0.05 1 0.02 0.01 τJ 0.1 SINGLE PULSE ( THERMAL RESPONSE ) 0.01 0.001 1E-006 1E-005 0.0001 0.001 R1 R1 τJ τ1 R2 R2 R3 R3 R4 R4 Ri (°C/W) R5 R5 τa τ2 τ1 τ2 τ3 τ3 Ci= τi/Ri Ci i Ri 0.01 τ4 τ4 τ5 τ5 2.185739 6.878609 10.36243 11.05530 9.52069 τi (sec) 0.000402 0.013524 0.33841 4.926 63.0 Notes: 1. Duty Factor D = t1/t2 2. Peak Tj = P dm x Zthja + Tc 0.1 1 10 100 t1 , Rectangular Pulse Duration (sec) Fig 11. Maximum Effective Transient Thermal Impedance, Junction-to-Ambient www.irf.com 5 25 120 ID = 15A 20 15 T J = 125°C 10 T J = 25°C EAS , Single Pulse Avalanche Energy (mJ) RDS(on), Drain-to -Source On Resistance (m Ω) IRFH7923PbF 5 ID 2.32A 3.30A BOTTOM 12.0A TOP 100 80 60 40 20 0 2 4 6 8 10 12 14 16 18 20 25 50 75 VGS, Gate -to -Source Voltage (V) Fig 12. On-Resistance vs. Gate Voltage V DS V GS L + V - DD IAS 20V 150 RD D.U.T. RG DRIVER D.U.T RG 125 Fig 13. Maximum Avalanche Energy vs. Drain Current 15V VDS 100 Starting T J , Junction Temperature (°C) + -V DD V10V GS Pulse Width ≤ 1 µs Duty Factor ≤ 0.1 A 0.01Ω tp Fig 14a. Unclamped Inductive Test Circuit V(BR)DSS tp Fig 15a. Switching Time Test Circuit VDS 90% 10% VGS I AS Fig 14b. Unclamped Inductive Waveforms 6 td(on) tr td(off) tf Fig 15b. Switching Time Waveforms www.irf.com IRFH7923PbF D.U.T Driver Gate Drive P.W. + - - - * D.U.T. ISD Waveform Reverse Recovery Current + RG • dv/dt controlled by RG • Driver same type as D.U.T. • I SD controlled by Duty Factor "D" • D.U.T. - Device Under Test P.W. Period VGS=10V Circuit Layout Considerations • Low Stray Inductance • Ground Plane • Low Leakage Inductance Current Transformer + D= Period V DD + - Body Diode Forward Current di/dt D.U.T. VDS Waveform Diode Recovery dv/dt Re-Applied Voltage Body Diode VDD Forward Drop Inductor Curent ISD Ripple ≤ 5% * VGS = 5V for Logic Level Devices Fig 16. Peak Diode Recovery dv/dt Test Circuit for N-Channel HEXFET® Power MOSFETs Current Regulator Same Type as D.U.T. Id Vds Vgs 50KΩ 12V .2µF .3µF D.U.T. + V - DS Vgs(th) VGS 3mA IG ID Qgs1 Qgs2 Qgd Qgodr Current Sampling Resistors Fig 17. Gate Charge Test Circuit www.irf.com Fig 18. Gate Charge Waveform 7 IRFH7923PbF PQFN Package Details PQFN Part Marking INTERNATIONAL RECTIFIER LOGO 6 DATE CODE XXXX ASSEMBLY SITE CODE (Per SCOP 200-002) PART NUMBER XYWWX XXXXX MARKING CODE (Per Marking Spec.) PIN 1 IDENTIFIER LOT CODE (Eng Mode - Min. last 4 digits of EATI #) (Prod Mode - 4 digits SPN code) TOP MARKING (LASER) Note: For the most current drawing please refer to IR website at: http://www.irf.com/package/ 8 www.irf.com IRFH7923PbF PQFN Tape and Reel Note: For the most current drawing please refer to IR website at: http://www.irf.com/package/ Notes: Repetitive rating; pulse width limited by max. junction temperature. Starting TJ = 25°C, L = 0.39mH, RG = 25Ω, IAS = 12A. Pulse width ≤ 400µs; duty cycle ≤ 2%. Rthjc is guaranteed by design When mounted on 1 inch square 2 oz copper pad on 1.5x1.5 in. board of FR-4 material. Data and specifications subject to change without notice. This product has been designed and qualified for the Consumer market. Qualification Standards can be found on IR’s Web site. IR WORLD HEADQUARTERS: 233 Kansas St., El Segundo, California 90245, USA Tel: (310) 252-7105 TAC Fax: (310) 252-7903 Visit us at www.irf.com for sales contact information.06/2008 www.irf.com 9