IRF IRFH7932TRPBF

PD - 96140A
IRFH7932PbF
HEXFET® Power MOSFET
Applications
l
l
Synchronous MOSFET for Notebook
Processor Power
Synchronous Rectifer MOSFET for Isolated
DC-DC Converters in Networking Systems
VDSS
30V
RDS(on) max
Qg
3.3m @VGS = 10V 34nC
:
Benefits
l
l
l
l
l
l
l
l
Very low RDS(ON) at 4.5V VGS
Low Gate Charge
Fully Characterized Avalanche Voltage and
Current
100% Tested for RG
Lead-Free (Qualified up to 260°C Reflow)
RoHS compliant (Halogen Free)
Low Thermal Resistance
Large Source Lead for more reliable Soldering
S
S
S
D
D
G
D
D
PQFN
Absolute Maximum Ratings
Parameter
Max.
VDS
Drain-to-Source Voltage
30
VGS
± 20
ID @ TA = 25°C
Gate-to-Source Voltage
Continuous Drain Current, VGS @ 10V
ID @ TA = 70°C
Continuous Drain Current, VGS @ 10V
20
ID @ TC = 25°C
104
IDM
Continuous Drain Current, VGS @ 10V
Pulsed Drain Current
PD @TA = 25°C
Power Dissipation
3.1
PD @TA = 70°C
TJ
Linear Derating Factor
Operating Junction and
TSTG
Storage Temperature Range
V
24
c
g
Power Dissipation g
Units
A
192
W
2
g
W/°C
0.03
-55 to + 150
°C
Thermal Resistance
Parameter
f
RθJC
Junction-to-Case
RθJA
Junction-to-Ambient
g
Typ.
Max.
–––
2.2
–––
40
Units
°C/W
Notes  through … are on page 9
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1
06/18/08
IRFH7932PbF
Static @ TJ = 25°C (unless otherwise specified)
Parameter
BVDSS
∆ΒVDSS/∆TJ
Min. Typ. Max. Units
30
–––
Breakdown Voltage Temp. Coefficient
Static Drain-to-Source On-Resistance
–––
–––
0.021
2.5
Gate Threshold Voltage
–––
1.35
3.3
1.8
IDSS
Gate Threshold Voltage Coefficient
Drain-to-Source Leakage Current
–––
–––
-5.9
–––
IGSS
Gate-to-Source Forward Leakage
–––
–––
–––
–––
Gate-to-Source Reverse Leakage
Forward Transconductance
–––
59
–––
–––
V/°C Reference to 25°C, ID = 1mA
VGS = 10V, ID = 25A
mΩ
VGS = 4.5V, ID = 20A
3.9
2.35
V
VDS = VGS, ID = 100µA
––– mV/°C
VDS = 24V, VGS = 0V
1.0
µA
VDS = 24V, VGS = 0V, TJ = 125°C
150
100
VGS = 20V
nA
-100
VGS = -20V
–––
S VDS = 15V, ID = 20A
Total Gate Charge
Pre-Vth Gate-to-Source Charge
–––
–––
34
7.9
51
–––
VDS = 15V
Post-Vth Gate-to-Source Charge
Gate-to-Drain Charge
–––
–––
3.6
11
–––
–––
VGS = 4.5V
ID = 20A
Qgodr
Qsw
Gate Charge Overdrive
Switch Charge (Qgs2 + Qgd)
–––
–––
12
15
–––
–––
Qoss
Output Charge
–––
19
–––
nC
RG
td(on)
tr
Gate Resistance
Turn-On Delay Time
Rise Time
–––
–––
–––
0.7
20
48
–––
–––
–––
Ω
td(off)
tf
Turn-Off Delay Time
Fall Time
–––
–––
23
20
–––
–––
Ciss
Coss
Input Capacitance
Output Capacitance
–––
–––
4270
830
–––
–––
Crss
Reverse Transfer Capacitance
–––
420
–––
RDS(on)
VGS(th)
∆VGS(th)
gfs
Qg
Qgs1
Qgs2
Qgd
–––
V
Conditions
Drain-to-Source Breakdown Voltage
VGS = 0V, ID = 250µA
–––
3.3
e
e
nC
See Fig.17 & 18
ns
pF
VDS = 16V, VGS = 0V
VDD = 15V, VGS = 4.5V
ID = 20A
RG=1.8Ω
See Fig.15
VGS = 0V
VDS = 15V
ƒ = 1.0MHz
Avalanche Characteristics
EAS
Parameter
Single Pulse Avalanche Energy
IAR
Avalanche Current
c
d
Typ.
–––
Max.
14
Units
mJ
–––
20
A
Diode Characteristics
Parameter
IS
Continuous Source Current
ISM
(Body Diode)
Pulsed Source Current
VSD
Min. Typ. Max. Units
–––
–––
Conditions
MOSFET symbol
3.9
A
D
showing the
integral reverse
G
(Body Diode)
Diode Forward Voltage
–––
–––
200
–––
–––
1.0
V
p-n junction diode.
TJ = 25°C, IS = 20A, VGS = 0V
trr
Qrr
Reverse Recovery Time
Reverse Recovery Charge
–––
–––
21
33
32
50
ns
nC
TJ = 25°C, IF = 20A, VDD = 15V
di/dt = 300A/µs
See Fig.16
ton
Forward Turn-On Time
2
c
S
e
e
Intrinsic turn-on time is negligible (turn-on is dominated by LS+LD)
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IRFH7932PbF
1000
1000
100
BOTTOM
10
TOP
1
0.1
2.3V
≤ 60µs PULSE WIDTH
Tj = 25°C
ID, Drain-to-Source Current (A)
ID, Drain-to-Source Current (A)
TOP
VGS
10V
5.0V
4.5V
3.5V
3.0V
2.7V
2.5V
2.3V
1
10
BOTTOM
10
2.3V
1
≤ 60µs PULSE WIDTH
Tj = 150°C
0.1
0.01
0.1
100
0.1
100
1
10
100
VDS, Drain-to-Source Voltage (V)
VDS, Drain-to-Source Voltage (V)
Fig 2. Typical Output Characteristics
Fig 1. Typical Output Characteristics
1000
2.0
RDS(on) , Drain-to-Source On Resistance
(Normalized)
ID, Drain-to-Source Current (A)
VGS
10V
5.0V
4.5V
3.5V
3.0V
2.7V
2.5V
2.3V
100
T J = 150°C
10
T J = 25°C
1
0.1
VDS = 15V
≤ 60µs PULSE WIDTH
0.01
1.0
2.0
3.0
4.0
VGS, Gate-to-Source Voltage (V)
Fig 3. Typical Transfer Characteristics
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5.0
ID = 25A
VGS = 10V
1.5
1.0
0.5
-60 -40 -20
0
20
40
60
80 100 120 140 160
T J , Junction Temperature (°C)
Fig 4. Normalized On-Resistance
Vs. Temperature
3
IRFH7932PbF
100000
14
VGS, Gate-to-Source Voltage (V)
VGS = 0V,
f = 1 MHZ
C iss = C gs + C gd, C ds SHORTED
C rss = C gd
C, Capacitance (pF)
C oss = C ds + C gd
10000
Ciss
Coss
1000
Crss
ID= 20A
12
VDS= 24V
VDS= 15V
10
8
6
4
2
0
100
1
10
0
100
20
40
60
80
100
QG Total Gate Charge (nC)
VDS, Drain-to-Source Voltage (V)
Fig 6. Typical Gate Charge Vs.
Gate-to-Source Voltage
Fig 5. Typical Capacitance Vs.
Drain-to-Source Voltage
1000
1000
ID, Drain-to-Source Current (A)
ISD, Reverse Drain Current (A)
OPERATION IN THIS AREA
LIMITED BY R DS(on)
100
100
T J = 150°C
10
T J = 25°C
1
100µsec
1msec
10
10msec
1
T A = 25°C
Tj = 150°C
Single Pulse
VGS = 0V
0.1
0.1
0.2
0.4
0.6
0.8
1.0
1.2
1.4
VSD, Source-to-Drain Voltage (V)
Fig 7. Typical Source-Drain Diode
Forward Voltage
4
1.6
0
1
10
100
VDS, Drain-to-Source Voltage (V)
Fig 8. Maximum Safe Operating Area
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IRFH7932PbF
VGS(th) Gate threshold Voltage (V)
30
ID , Drain Current (A)
25
20
15
10
5
2.0
ID = 100µA
1.6
1.2
0.8
0
25
50
75
100
125
-75
150
-50
-25
0
25
50
75
100
125
150
T J , Temperature ( °C )
T J , Ambient Temperature (°C)
Fig 9. Maximum Drain Current Vs.
Ambient Temperature
Fig 10. Threshold Voltage Vs. Temperature
100
Thermal Response ( Z thJA )
D = 0.50
10
0.20
0.10
0.05
0.02
0.01
1
τJ
0.1
SINGLE PULSE
( THERMAL RESPONSE )
0.01
R1
R1
τJ
τ1
R2
R2
R3
R3
Ri (°C/W)
R4
R4
τaC
τ
τ2
τ1
τ3
τ2
τ3
Ci= τi/Ri
Ci i/Ri
τ4
τ4
1.337662
τi (sec)
0.000128
5.012987
0.023270
17.95455
1.0678
15.70617
38.4
Notes:
1. Duty Factor D = t1/t2
2. Peak Tj = P dm x Zthja + Tc
0.001
1E-006
1E-005
0.0001
0.001
0.01
0.1
1
10
100
t1 , Rectangular Pulse Duration (sec)
Fig 11. Maximum Effective Transient Thermal Impedance, Junction-to-Ambient
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5
16
40
ID = 25A
14
EAS , Single Pulse Avalanche Energy (mJ)
RDS(on), Drain-to -Source On Resistance ( mΩ)
IRFH7932PbF
12
10
8
T J = 125°C
6
4
2
T J = 25°C
0
2
3
4
5
6
7
8
9
10
ID
5.86A
6.91A
BOTTOM 20.0A
35
TOP
30
25
20
15
10
5
0
25
VGS, Gate-to-Source Voltage (V)
50
75
100
125
150
Starting T J , Junction Temperature (°C)
Fig 12. On-Resistance vs. Gate Voltage
Fig 13. Maximum Avalanche Energy
vs. Drain Current
V DS
15V
V GS
L
VDS
D.U.T
RG
+
V
- DD
IAS
20V
D.U.T.
RG
DRIVER
RD
+
-V DD
V10V
GS
Pulse Width ≤ 1 µs
Duty Factor ≤ 0.1
A
0.01Ω
tp
Fig 14a. Unclamped Inductive Test Circuit
V(BR)DSS
tp
Fig 15a. Switching Time Test Circuit
VDS
90%
10%
VGS
I AS
Fig 14b. Unclamped Inductive Waveforms
6
td(on)
tr
td(off)
tf
Fig 15b. Switching Time Waveforms
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IRFH7932PbF
D.U.T
Driver Gate Drive
P.W.
+
ƒ
-
‚
-
-
„
*
D.U.T. ISD Waveform
Reverse
Recovery
Current
+

RG
• dv/dt controlled by RG
• Driver same type as D.U.T.
• I SD controlled by Duty Factor "D"
• D.U.T. - Device Under Test
P.W.
Period
VGS=10V
Circuit Layout Considerations
• Low Stray Inductance
• Ground Plane
• Low Leakage Inductance
Current Transformer
+
D=
Period
V DD
+
-
Body Diode Forward
Current
di/dt
D.U.T. VDS Waveform
Diode Recovery
dv/dt
Re-Applied
Voltage
Body Diode
VDD
Forward Drop
Inductor Curent
ISD
Ripple ≤ 5%
* VGS = 5V for Logic Level Devices
Fig 16. Peak Diode Recovery dv/dt Test Circuit for N-Channel
HEXFET® Power MOSFETs
Current Regulator
Same Type as D.U.T.
Id
Vds
Vgs
50KΩ
12V
.2µF
.3µF
D.U.T.
+
V
- DS
Vgs(th)
VGS
3mA
IG
ID
Qgs1 Qgs2
Qgd
Qgodr
Current Sampling Resistors
Fig 17. Gate Charge Test Circuit
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Fig 18. Gate Charge Waveform
7
IRFH7932PbF
PQFN Package Details
PQFN Part Marking
INTERNATIONAL
RECTIFIER LOGO
6
DATE CODE
XXXX
ASSEMBLY SITE CODE
(Per SCOP 200-002)
PART NUMBER
XYWWX
XXXXX
MARKING CODE
(Per Marking Spec.)
PIN 1
IDENTIFIER
LOT CODE
(Eng Mode - Min. last 4 digits of EATI #)
(Prod Mode - 4 digits SPN code)
TOP MARKING (LASER)
Note: For the most current drawing please refer to IR website at: http://www.irf.com/package/
8
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IRFH7932PbF
PQFN Tape and Reel
Note: For the most current drawing please refer to IR website at: http://www.irf.com/package/
Notes:
 Repetitive rating; pulse width limited by max. junction temperature.
‚ Starting TJ = 25°C, L = 0.071mH, RG = 25Ω, IAS = 20A.
ƒ Pulse width ≤ 400µs; duty cycle ≤ 2%.
„ Rthjc is guaranteed by design
… When mounted on 1 inch square 2 oz copper pad on 1.5x1.5 in. board of FR-4 material.
Data and specifications subject to change without notice.
This product has been designed and qualified for the Consumer market.
Qualification Standards can be found on IR’s Web site.
IR WORLD HEADQUARTERS: 233 Kansas St., El Segundo, California 90245, USA Tel: (310) 252-7105
TAC Fax: (310) 252-7903
Visit us at www.irf.com for sales contact information.06/2008
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9