IRF IRF6100PBF

PD - 96012B
IRF6100PbF
HEXFET® Power MOSFET
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Ultra Low RDS(on) per Footprint Area
Low Thermal Resistance
P-Channel MOSFET
One-third Footprint of SOT-23
Super Low Profile (<.8mm)
Available Tested on Tape & Reel
Lead-Free
VDSS
RDS(on) max
ID
-20V
0.065Ω@VGS = -4.5V
-5.1A
0.095Ω@VGS = -2.5V
-4.1A
Description
True chip-scale packaging is available from International
Rectifier. Through the use of advanced processing techniques, and a unique packaging concept, extremely low
on-resistance and the highest power densities in the
industry have been made available for battery and load
management applications. These benefits, combined with
the ruggedized device design , that International Rectifier
is well known for, provides the designer with an ex-
D
G
S
tremely efficient and reliable device.
FlipFET™ ISOMETRIC
The FlipFET™ package, is one-third the footprint of a
comparable SOT-23 package and has a profile of less
than .8mm. Combined with the low thermal resistance of
the die level device, this makes the FlipFET™ the best
device for application where printed circuit board space is
at a premium and in extremely thin application environments such as battery packs, cell phones and PCMCIA
cards.
Absolute Maximum Ratings
Parameter
VDS
ID @ TA = 25°C
ID @ TA = 70°C
IDM
PD @TA = 25°C
PD @TA = 70°C
VGS
TJ, TSTG
Drain- Source Voltage
Continuous Drain Current, VGS @ 4.5V
Continuous Drain Current, VGS @ 4.5V
Pulsed Drain Current 
Power Dissipationƒ
Power Dissipationƒ
Linear Derating Factor
Gate-to-Source Voltage
Junction and Storage Temperature Range
Max.
Units
-20
±5.1
±3.5
±35
2.2
1.4
17
± 12
-55 to + 150
V
A
W
mW/°C
V
°C
Thermal Resistance
Symbol
RθJA
RθJ-PCB
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Parameter
Junction-to-Ambientƒ
Junction-to-PCB mounted
Typ.
Max.
Units
°C/W
35
56.5
–––
1
05/17/06
IRF6100PbF
Electrical Characteristics @ TJ = 25°C (unless otherwise specified)
∆V(BR)DSS/∆TJ
Parameter
Drain-to-Source Breakdown Voltage
Breakdown Voltage Temp. Coefficient
RDS(on)
Static Drain-to-Source On-Resistance
VGS(th)
gfs
Gate Threshold Voltage
Forward Transconductance
IDSS
Drain-to-Source Leakage Current
IGSS
Gate-to-Source Forward Leakage
Gate-to-Source Reverse Leakage
Total Gate Charge
Gate-to-Source Charge
Gate-to-Drain ("Miller") Charge
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
Fall Time
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
V(BR)DSS
Qg
Qgs
Qgd
td(on)
tr
td(off)
tf
Ciss
Coss
Crss
Min.
-20
–––
–––
–––
-0.45
9.8
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
Typ. Max. Units
Conditions
––– –––
V
VGS = 0V, ID = -250µA
-0.010 ––– V/°C Reference to 25°C, ID = -1mA
––– 0.065
VGS = -4.5V, ID = -5.1A ‚
Ω
––– 0.095
VGS = -2.5V, ID = -4.1A ‚
––– -1.2
V
VDS = VGS, ID = -250µA
––– –––
S
VDS = -10V, ID = -5.1A
––– -1.0
VDS = -20V, VGS = 0V
µA
––– -25
VDS = -16V, VGS = 0V, TJ = 125°C
––– 100
VGS = 12V
nA
––– -100
VGS = -12V
14
21
ID = -5.1A
1.9 2.9
nC
VDS = -16V
5.0 7.5
VGS = -5.0V
12 –––
VDD = -10V
12 –––
ID = -1.0A
ns
50 –––
RG = 5.8Ω
50 –––
VGS = -4.5V ‚
1230 –––
VGS = 0V
250 –––
pF
VDS = -15V
180 –––
ƒ = 1.0MHz, See Fig. 5
Source-Drain Ratings and Characteristics
IS
ISM
VSD
trr
Qrr
Parameter
Continuous Source Current
(Body Diode)
Pulsed Source Current
(Body Diode) 
Diode Forward Voltage
Reverse Recovery Time
Reverse RecoveryCharge
Min. Typ. Max. Units
–––
–––
-2.2
–––
–––
-33
–––
–––
–––
–––
48
34
-1.2
72
51
A
V
ns
nC
Conditions
MOSFET symbol
showing the
G
integral reverse
p-n junction diode.
TJ = 25°C, IS = -2.2A, VGS = 0V ‚
TJ = 25°C, IF = -2.2A
di/dt = 100A/µs ‚
D
S
Notes:
 Repetitive rating; pulse width limited by
max. junction temperature.
ƒ When mounted on 1 inch square 2oz copper on FR-4.
‚ Pulse width ≤ 400µs; duty cycle ≤ 2%.
2
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IRF6100PbF
100
100
VGS
-7.00V
-5.00V
-4.50V
-2.50V
-1.80V
-1.50V
-1.20V
BOTTOM -1.00V
10
1
-1.00V
0.1
20µs PULSE WIDTH
TJ = 25 °C
0.01
0.1
1
10
10
1
RDS(on) , Drain-to-Source On Resistance
(Normalized)
-I D , Drain-to-Source Current (A)
2.0
TJ = 25 ° C
TJ = 150 ° C
10
V DS = -15V
20µs PULSE WIDTH
2.5
-VGS , Gate-to-Source Voltage (V)
Fig 3. Typical Transfer Characteristics
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1
10
100
Fig 2. Typical Output Characteristics
100
2.0
20µs PULSE WIDTH
TJ = 150 °C
-VDS , Drain-to-Source Voltage (V)
Fig 1. Typical Output Characteristics
1.5
-1.00V
0.1
0.1
100
-VDS , Drain-to-Source Voltage (V)
1
1.0
VGS
-7.00V
-5.00V
-4.50V
-2.50V
-1.80V
-1.50V
-1.20V
BOTTOM -1.00V
TOP
-I D , Drain-to-Source Current (A)
-I D , Drain-to-Source Current (A)
TOP
3.0
ID = -5.1A
1.5
1.0
0.5
0.0
-60 -40 -20
VGS = -4.5V
0
20
40
60
80 100 120 140 160
TJ , Junction Temperature ( °C)
Fig 4. Normalized On-Resistance
Vs. Temperature
3
IRF6100PbF
VGS = 0V,
f = 1MHz
Ciss = Cgs + Cgd , Cds SHORTED
Crss = Cgd
Coss = Cds + Cgd
C, Capacitance (pF)
1600
Ciss
1200
800
400
0
Coss
Crss
1
10
10
-VGS , Gate-to-Source Voltage (V)
2000
VDS =-16V
8
6
4
2
0
100
ID = -5.1A
0
Fig 5. Typical Capacitance Vs.
Drain-to-Source Voltage
8
12
16
20
24
Fig 6. Typical Gate Charge Vs.
Gate-to-Source Voltage
1000
100
OPERATION IN THIS AREA LIMITED
BY RDS(on)
100
10
-IID , Drain Current (A)
-ISD , Reverse Drain Current (A)
4
QG , Total Gate Charge (nC)
-VDS , Drain-to-Source Voltage (V)
TJ = 150 ° C
TJ = 25 ° C
1
0.1
0.0
V GS = 0 V
0.4
0.8
1.2
1.6
2.0
-VSD ,Source-to-Drain Voltage (V)
Fig 7. Typical Source-Drain Diode
Forward Voltage
4
2.4
10us
10
100us
1ms
1
10ms
TA = 25 ° C
TJ = 150 ° C
Single Pulse
0.1
0.1
1
10
100
-VDS , Drain-to-Source Voltage (V)
Fig 8. Maximum Safe Operating Area
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IRF6100PbF
6.0
RD
V DS
-ID , Drain Current (A)
5.0
VGS
D.U.T.
RG
4.0
-
+
VDD
VGS
3.0
Pulse Width ≤ 1 µs
Duty Factor ≤ 0.1 %
2.0
Fig 10a. Switching Time Test Circuit
1.0
td(on)
0.0
tr
t d(off)
tf
VGS
25
50
75
100
125
TC , Case Temperature ( °C)
10%
150
90%
Fig 9. Maximum Drain Current Vs.
Case Temperature
VDS
Fig 10b. Switching Time Waveforms
Thermal Response (Z thJA )
100
D = 0.50
0.20
10
0.10
0.05
0.02
1
PDM
0.01
t1
SINGLE PULSE
(THERMAL RESPONSE)
0.1
0.00001
t2
Notes:
1. Duty factor D = t 1 / t 2
2. Peak TJ = P DM x Z thJA + TA
0.0001
0.001
0.01
0.1
1
10
t1 , Rectangular Pulse Duration (sec)
Fig 11. Maximum Effective Transient Thermal Impedance, Junction-to-Ambient
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5
0.08
RDS (on) , Drain-to-Source On Resistance (Ω)
RDS(on) , Drain-to -Source On Resistance (Ω)
IRF6100PbF
0.07
0.06
0.05
ID = -5.1A
0.04
0.03
1.0
2.0
3.0
4.0
5.0
6.0
7.0
0.16
0.12
0.08
VGS = -2.5V
VGS = -4.5V
0.04
0
10
-V GS, Gate -to -Source Voltage (V)
Fig 12. Typical On-Resistance Vs. Gate
Voltage
20
30
40
-I D , Drain Current (A)
Fig 13. Typical On-Resistance Vs. Drain
Current
Current Regulator
Same Type as D.U.T.
50KΩ
QG
QGS
.2µF
.3µF
QGD
D.U.T.
+VDS
VGS
VG
-3mA
Charge
Fig 14a. Basic Gate Charge Waveform
6
12V
IG
ID
Current Sampling Resistors
Fig 14b. Gate Charge Test Circuit
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IRF6100PbF
20
1.0
16
Power Dissipation (W)
-VGS(th) Gate threshold Voltage (V)
1.1
0.9
ID = -250µA
0.8
0.7
0.6
12
8
4
0.5
0
0.4
-75
-50
-25
0
25
50
75
100
125
150
T J , Temperature ( °C )
Fig 15. Threshold Voltage Vs. Temperature
0.001
0.010
0.100
1.000
10.000
Pulsewidth (sec)
Fig 16. Maximum Power Dissipation
Vs. Time
FlipFET™ Part Marking Information
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7
IRF6100PbF
FlipFET™ Outline Dimension and Tape and Reel
(Refer to application note AN-1011 for details about board mounting the 0.8mm ball pitch Flip FET)
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Tape and Reel
Data and specifications subject to change without notice.
This product has been designed and qualified for the Consumer market.
Qualification Standards can be found on IR’s Web site.
IR WORLD HEADQUARTERS: 233 Kansas St., El Segundo, California 90245, USA Tel: (310) 252-7105
TAC Fax: (310) 252-7903
Visit us at www.irf.com for sales contact information.05/06
8
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