IRF IR51H737

Previous Datasheet
Index
Next Data Sheet
Data Sheet No. PD-6.057D
IR51H737
SELF-OSCILLATING HALF-BRIDGE
Features
n
n
n
n
Product Summary
Output Power MOSFETs in half-bridge configuration
300V Rated Breakdown Voltage
High side gate drive designed for bootstrap operation
Accurate timing control for both Power MOSFETs
Matched delay to get 50% duty cycle
Matched deadtime of 1.2us
Internal oscillator with programmable frequency
1
f =
n
n
1. 4 × (RT + 75 Ω ) × CT
Zener clamped Vcc for offline operation
Half-bridge output is out of phase with RT
VIN (max)
300V
Duty Cycle
50%
Deadtime
1.2µs
RDS(on)
0.75Ω
Ω
PD (TA = 25 ºC)
2.0W
Package
Description
The IR51H737 is a high voltage, high speed, selfoscillating half-bridge. Proprietary HVIC and latch
immune CMOS technologies, along with the
HEXFET® power MOSFET technology, enable
ruggedized single package construction. The front-end
features a programmable oscillator which functions
similar to the CMOS 555 timer. The supply to the
control circuit has a zener clamp to simplify offline
operation. The output features two HEXFETs in a
half-bridge configuration with an internally set
deadtime designed for minimum cross-conduction in
the half-bridge. Propagation delays for the high and
low side power MOSFETs are matched to simplify use
in 50% duty cycle applications. The device can
operate up to 300 volts.
IR51H737
9506
Typical Connection
U P
T O
3 0 0 V
D C
B U S
V IN
IR 5 1 H 7 3 7
1
6
V
C C
V
B
2
9
R
T
V IN
R T
3
7
C
T
V O
C T
T O
4
C O M
C O M
To Order
L O A D
Previous Datasheet
Index
Next Data Sheet
IR51H737
Absolute Maximum Ratings
Absolute Maximum Ratings indicate sustained limits beyond which damage to the device may occur. All
voltage parameters are absolute voltages referenced to COM, all currents are defined positive into any lead.
The Thermal Resistance and Power Dissipation ratings are measured under board mounted and still air
conditions.
Symbol
VIN
VB
VO
VRT
VCT
ICC
IRT
dv/dt
PD
RθJA
TJ
TS
TL
Parameter
Definition
High Voltage Supply
High Side Floating Supply Absolute Voltage
Half-Bridge Output Voltage
RT Voltage
CT Voltage
Supply Current (Note 1)
RT Output Current
Peak Diode Recovery dv/dt
Package Power Dissipation @ TA ≤ +25ºC
Thermal Resistance, Junction to Ambient
Junction Temperature
Storage Temperature
Lead Temperature (Soldering, 10 seconds)
Min.
Max.
-0.3
-0.3
-0.3
-0.3
-0.3
---5
-------55
-55
---
300
325
VIN + 0.3
VCC + 0.3
VCC + 0.3
25
5
3.4
2.00
60
150
150
300
Units
V
mA
V/ns
W
ºC/W
ºC
Recommended Operating Conditions
The Input/Output logic timing diagram is shown in Figure 1. For proper operation the device should be used
within the recommended conditions.
Symbol
VB
VIN
VO
ID
ICC
TA
Note 1:
Parameter
Definition
High Side Floating Supply Absolute Voltage
High Voltage Supply
Half-Bridge Output Voltage
Continuous Drain Current
(TA = 25ºC)
(TA = 85ºC)
Supply Current (Note 1)
Ambient Temperature
Min.
Max.
VO + 10
---5
-------40
VO + VCLAMP
300
300
1.3
0.8
5
125
Units
V
A
mA
ºC
Because of the IR51H737's application specificity toward off-line supply systems, this IC contains a
zener clamp structure between the chip VCC and COM which has a nominal breakdown voltage of
15.6V. Therefore, the IC supply voltage is normally derived by current feeding the VCC lead
(typically by means of a high value resistor connected between the chip VCC and the rectified line
voltage and a local decoupling capacitor from VCC to COM) and allowing the internal zener clamp
circuit to determine the nominal supply voltage. Therefore, this circuit should not be driven by a DC,
low impedance power source of greater than VCLAMP.
To Order
Previous Datasheet
Index
Next Data Sheet
IR51H737
Dynamic Electrical Characteristics
VBIAS (VCC, VB) = 12V unless otherwise specified.
Symbol
Parameter
Definition
TA = 25ºC
Min. Typ. Max. Units
trr
Qrr
Reverse Recovery Time (MOSFET Body Diode)
Reverse Recovery Charge (MOSFET Body Diode)
-----
320
1.5
-----
ns
µC
DT
Deadtime, LS Turn-Off to HS Turn-On &
HS Turn-Off to LS Turn-On
RT Duty Cycle
---
1.2
---
µs
---
50
---
%
D
Test Conditions
IF = 1.3 A
di/dt = 100A/µs
f OSC = 20 kHz
Static Electrical Characteristics
VBIAS (VCC, VB) = 12V unless otherwise specified.
Symbol
Parameter
Definition
TA = 25ºC
Min. Typ. Max. Units
Supply Characteristics
VCCUV+ VCC Supply Undervoltage Positive Going
Threshold
VCCUV- VCC Supply Undervoltage Negative Going
Threshold
IQCC
Quiescent VCC Supply Current
VCLAMP VCC Zener Shunt Clamp Voltage
Floating Supply Characteristics
IQBS
Quiescent VBS Supply Current
IOS
Offset Supply Leakage Current--Oscillator I/O Characteristics
f OSC
Oscillator Frequency
---
---
8.4
---
---
8.0
---
-----
300
15.6
-----
µA
V
---
30
V
---
µA
20
---
V
50
-----
CT Input Current
CT Undervoltage Lockout
--RT High Level Output Voltage, VCC - RT
VRT-
RT Low Level Output Voltage
VRTUV
RT Undervoltage Lockout, VCC - RT
VCT+
2/3 VCC Threshold
VCT1/3 VCC Threshold
Output Characteristics
RDS(on) Static Drain-to-Source On-Resistance
VSD
Diode Forward Voltage
--0.8
100
100
---
--- 0.001
----20
--200
--20
--200
--100
--8.0
--4.0
1.0
µA
2.5V < V
----mV
--------V
---
---
---
---
To Order
0.75
ICC = 5 mA
B
kHz
ICT
VCTUV
VRT+
Test Conditions
Ω
V
= VIN = 300V
RT = 35.7 kΩ,
CT = 1 nF
RT = 7.04 kΩ,
CT = 1 nF
< VCCUV+
IRT = -100 µA
IRT = -1 mA
IRT = 100 µA
IRT = 1 mA
2.5V < VCC < VCCUV+
CC
ID = 800mA
Tj = 150 ºC
Previous Datasheet
Index
Next Data Sheet
IR51H737
Functional Block Diagram
VB
VIN
6
1
9
IRFC737LC
V CC
2
RT
7
IR2151
3
VO
IRFC737LC
CT
4
COM
Lead Definitions
Lead
Description
Symbol
VCC
RT
CT
Logic and internal gate drive supply voltage. An internal zener clamp diode at 15.6 V nominal is
included to allow the Vcc to be current fed directly from VIN typically by means of a high value
resistor.
Oscillator timing resistor input; a resistor is connected from RT to CT . RT is out of phase with
the half-bridge output (VO).
Oscillator timing capacitor output; a capacitor is connected from CT to COM in order to program
the oscillator frequency according to the following equation:
1
f =
VB
VIN
VO
COM
1. 4 × (RT + 75 Ω ) × CT
where 75Ω is the effective impedance of the RT output stage.
High side gate drive floating supply. For bootstrap operation a high voltage fast recovery diode is
needed to feed from VCC to VB.
High voltage supply.
Half-bridge output.
Logic and low side of half-bridge return.
To Order
Previous Datasheet
Index
Next Data Sheet
IR51H737
Lead Assignments
1
2
VCC RT
3
4
CT COM
6
7
9
VB
V0
VIN
9 Lead SIP w/o Leads 5 & 8
IR51H737
VCCUV+
RT
VCLAMP
50%
50%
VCC
90%
RT
HIGH
SIDE
CT
10%
DT
V+
VO
LOW
SIDE
0
Figure 1. Input/Output Timing Diagram
90%
10%
Figure 2. Deadtime Waveform Definitions
To Order
Previous Datasheet
Index
Next Data Sheet
IR51H737
Package Outline
WORLD HEADQUARTERS: 233 Kansas St., El Segundo, California 90245, Tel: (310) 322 3331
EUROPEAN HEADQUARTERS: Hurst Green, Oxted, Surrey RH8 9BB, UK Tel: ++ 44 1883 732020
IR CANADA: 7321 Victoria Park Ave., Suite 201, Markham, Ontario L3R 2Z8, Tel: (905) 475 1897
IR GERMANY: Saalburgstrasse 157, 61350 Bad Homburg Tel: ++ 49 6172 96590
IR ITALY: Via Liguria 49, 10071 Borgaro, Torino Tel: ++ 39 11 451 0111
IR FAR EAST: 171 (K&H Bldg.), 30-4 Nishi-ikebukuro 3-Chome, Toshima-ku, Tokyo Japan Tel: 81 3 3983 0086
IR SOUTHEAST ASIA: 315 Outram Road, #10-02 Tan Boon Liat Building, Singapore 0316 Tel: 65 221 8371
http://www.irf.com
Sales Offices, Agents and Distributors in Major Cities Throughout the World.
© 1996 International Rectifier Printed in U.S.A. 3-96
To Order
Data and specifications subject to change without notice.