IRF IRGS4B60K

PD - 95643
IRGB4B60KPbF
IRGS4B60K
IRGSL4B60K
INSULATED GATE BIPOLAR TRANSISTOR
Features
•
•
•
•
•
•
Low VCE (on) Non Punch Through IGBT Technology.
10µs Short Circuit Capability.
Square RBSOA.
Positive VCE (on) Temperature Coefficient.
Maximum Junction Temperature rated at 175°C.
TO-220 is available in PbF as a Lead-Free.
C
VCES = 600V
IC = 6.8A, TC=100°C
G
tsc > 10µs, TJ=150°C
E
Benefits
n-channel
VCE(on) typ. = 2.1V
• Benchmark Efficiency for Motor Control.
• Rugged Transient Performance.
• Low EMI.
• Excellent Current Sharing in Parallel Operation.
D2Pak
TO-220
IRGB4B60KPbF IRGS4B60K
TO-262
IRGSL4B60K
Absolute Maximum Ratings
Max.
Units
VCES
Collector-to-Emitter Voltage
Parameter
600
V
IC @ TC = 25°C
Continuous Collector Current
12
IC @ TC = 100°C
Continuous Collector Current
6.8
ICM
24
ILM
Pulse Collector Current (Ref.Fig.C.T.5)
Clamped Inductive Load current
VGE
Gate-to-Emitter Voltage
±20
V
PD @ TC = 25°C
Maximum Power Dissipation
63
W
c
24
PD @ TC = 100°C Maximum Power Dissipation
Operating Junction and
TJ
TSTG
A
31
-55 to +175
Storage Temperature Range
°C
Soldering Temperature, for 10 sec.
300 (0.063 in. (1.6mm) from case)
Thermal / Mechanical Characteristics
Min.
Typ.
Max.
Units
RθJC
Junction-to-Case- IGBT
Parameter
–––
–––
2.4
°C/W
RθCS
Case-to-Sink, flat, greased surface
–––
0.50
–––
RθJA
Junction-to-Ambient
–––
–––
62
d
RθJA
Junction-to-Ambient (PCB Mount, steady state)
–––
–––
40
Wt
Weight
–––
1.44
–––
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g
1
7/26/04
IRGB4B60KPbF
IRGS/SL4B60K
Electrical Characteristics @ TJ = 25°C (unless otherwise specified)
Parameter
Min. Typ. Max. Units
V(BR)CES
Collector-to-Emitter Breakdown Voltage
600
∆V(BR)CES/∆TJ Temperature Coeff. of Breakdown Voltage —
VCE(on)
Collector-to-Emitter Voltage
—
—
0.28
—
—
2.1
2.5
—
2.5
2.8
—
2.6
2.8
VGE(th)
Gate Threshold Voltage
3.5
4.5
5.5
∆VGE(th)/∆TJ
Threshold Voltage temp. coefficient
—
-8.1
—
gfe
Forward Transconductance
—
1.7
—
—
1.0
150
ICES
Zero Gate Voltage Collector Current
—
54
300
—
300
800
IGES
Gate-to-Emitter Leakage Current
—
—
±100
V
Conditions
Ref.Fig.
VGE = 0V, IC = 500µA
V/°C VGE = 0V, IC = 1mA (25°C-150°C)
IC = 4.0A, VGE = 15V, TJ = 25°C
V
5,6,7
IC = 4.0A, VGE = 15V, TJ = 150°C
9,10,11
IC = 4.0A, VGE = 15V, TJ = 175°C
V
VCE = VGE, IC = 250µA
9,10,11
mV/°C VCE = VGE, IC = 1mA (25°C-150°C)
S VCE = 50V, IC = 4.0A, PW = 80µs
12
VGE = 0V, VCE = 600V
µA
VGE = 0V, VCE = 600V, TJ = 150°C
VGE = 0V, VCE = 600V, TJ = 175°C
nA
VGE = ±20V
Switching Characteristics @ TJ = 25°C (unless otherwise specified)
Parameter
Min. Typ. Max. Units
Qg
Total Gate Charge (turn-on)
—
12
—
Qge
Gate-to-Emitter Charge (turn-on)
—
1.7
—
Conditions
nC
23
VCC = 400V
CT1
Qgc
Gate-to-Collector Charge (turn-on)
—
6.5
—
VGE = 15V
Eon
Turn-On Switching Loss
—
73
80
IC = 4.0A, VCC = 400V
Eoff
Turn-Off Switching Loss
—
47
53
µJ
e
Etot
Total Switching Loss
—
120
130
TJ = 25°C
Turn-On delay time
—
22
28
IC = 4.0A, VCC = 400V
tr
Rise time
—
18
23
Turn-Off delay time
—
100
110
ns
CT4
VGE = 15V, RG = 100Ω, L = 2.5mH
td(on)
td(off)
Ref.Fig.
IC = 4.0A
VGE = 15V, RG = 100Ω, L = 2.5mH
CT4
TJ = 25°C
tf
Fall time
—
66
80
Eon
Turn-On Switching Loss
—
130
150
Eoff
Turn-Off Switching Loss
—
83
140
Etot
Total Switching Loss
—
220
280
TJ = 150°C
td(on)
Turn-On delay time
—
22
27
IC = 4.0A, VCC = 400V
tr
Rise time
—
18
22
td(off)
Turn-Off delay time
—
120
130
tf
Fall time
—
79
89
Cies
Input Capacitance
—
190
—
Coes
Output Capacitance
—
25
—
Cres
Reverse Transfer Capacitance
—
6.2
—
RBSOA
Reverse Bias Safe Operating Area
IC = 4.0A, VCC = 400V
µJ
ns
CT4
VGE = 15V, RG = 100Ω, L = 2.5mH
e
13,15
WF1,WF2
14,16
VGE = 15V, RG = 100Ω, L = 2.5mH
CT4
TJ = 150°C
WF1
WF2
VGE = 0V
pF
FULL SQUARE
VCC = 30V
22
f = 1.0MHz
TJ = 150°C, IC = 24A, Vp = 600V
4
VCC=500V,VGE = +15V to 0V,RG = 100Ω
SCSOA
Short Circuit Safe Operating Area
10
—
—
µs
CT3
VCC=360V,VGE = +15V to 0V
WF3
Note  to ƒ are on page 16
2
CT2
TJ = 150°C, Vp = 600V, RG = 100Ω
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IRGB4B60KPbF
IRGS/SL4B60K
12
70
10
60
50
Ptot (W)
IC (A)
8
6
40
30
4
20
2
10
0
0
0
20
40
60
80 100 120 140 160 180
0
T C (°C)
20
40
60
80 100 120 140 160 180
T C (°C)
Fig. 1 - Maximum DC Collector Current vs.
Case Temperature
Fig. 2 - Power Dissipation vs. Case
Temperature
100
100
10
10
IC A)
IC (A)
100µs
1
1ms
1
10ms
0.1
DC
0.01
0
0
1
10
100
1000
VCE (V)
Fig. 3 - Forward SOA
TC = 25°C; TJ ≤ 150°C
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10000
10
100
1000
VCE (V)
Fig. 4 - Reverse Bias SOA
TJ = 150°C; VGE =15V
3
IRGB4B60KPbF
IRGS/SL4B60K
30
25
VGE = 18V
VGE = 15V
VGE = 12V
VGE = 10V
VGE = 8.0V
25
20
ICE (A)
20
ICE (A)
30
VGE = 18V
VGE = 15V
VGE = 12V
VGE = 10V
VGE = 8.0V
15
15
10
10
5
5
0
0
0
2
4
6
8
10
12
0
2
VCE (V)
4
6
8
10
12
VCE (V)
Fig. 5 - Typ. IGBT Output Characteristics
TJ = -40°C; tp = 80µs
Fig. 6 - Typ. IGBT Output Characteristics
TJ = 25°C; tp = 80µs
25
VGE = 18V
VGE = 15V
VGE = 12V
VGE = 10V
VGE = 8.0V
ICE (A)
20
15
10
5
0
0
2
4
6
8
10
12
VCE (V)
Fig. 7 - Typ. IGBT Output Characteristics
TJ = 150°C; tp = 80µs
4
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20
20
18
18
16
16
14
14
12
10
ICE = 2.0A
ICE = 4.0A
8
ICE = 8.0A
VCE (V)
VCE (V)
IRGB4B60KPbF
IRGS/SL4B60K
12
10
ICE = 2.0A
ICE = 4.0A
8
ICE = 8.0A
6
6
4
4
2
2
0
0
5
10
15
20
5
10
VGE (V)
15
20
VGE (V)
Fig. 8 - Typical VCE vs. VGE
TJ = -40°C
Fig. 9 - Typical VCE vs. VGE
TJ = 25°C
20
30
ID, Drain-to-Source Current (Α)
18
16
VCE (V)
14
12
10
ICE = 2.0A
ICE = 4.0A
8
ICE = 8.0A
6
4
25
T J = 25°C
20
15
TJ = 150°C
10
5
2
0
0
5
10
15
VGE (V)
Fig. 10 - Typical VCE vs. VGE
TJ = 150°C
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20
0
5
10
15
20
VGS , Gate-to-Source Voltage (V)
Fig. 11 - Typ. Transfer Characteristics
VCE = 360V; tp = 10µs
5
IRGB4B60KPbF
IRGS/SL4B60K
350
1000
300
Swiching Time (ns)
Energy (µJ)
td OFF
EON
250
200
150
EOFF
100
tF
100
tdON
10
tR
50
0
1
1
2
3
4
5
6
7
8
9
10
0
2
Fig. 12 - Typ. Energy Loss vs. IC
TJ = 150°C; L=2.5mH; VCE= 400V,
RG= 100Ω; VGE= 15V
6
8
10
Fig. 13 - Typ. Switching Time vs. IC
TJ = 150°C; L=2.5mH; VCE= 400V
RG= 100Ω; VGE= 15V
350
1000
300
EON
Swiching Time (ns)
250
Energy (µJ)
4
IC (A)
IC (A)
200
EOFF
150
100
tdOFF
100
tF
tdON
50
tR
0
10
0
100
200
300
400
RG ( Ω)
Fig. 14 - Typ. Energy Loss vs. RG
TJ = 150°C; L=2.5mH; VCE= 400V
ICE= 4.0A; VGE= 15V
6
500
0
100
200
300
400
500
RG ( Ω)
Fig. 15 - Typ. Switching Time vs. RG
TJ = 150°C; L=2.5mH; VCE= 400V
ICE= 4.0A; VGE= 15V
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IRGB4B60KPbF
IRGS/SL4B60K
1000
16
14
Cies
300V
400V
100
10
VGE (V)
Capacitance (pF)
12
Coes
6
Cres
10
8
4
2
1
0
0
20
40
60
80
100
0
2
VCE (V)
4
6
8
10
12
14
Q G , Total Gate Charge (nC)
Fig. 17 - Typical Gate Charge vs. VGE
ICE = 4.0A; L = 3150µH
Fig. 16- Typ. Capacitance vs. VCE
VGE= 0V; f = 1MHz
Thermal Response ( Z thJC )
10
1
D = 0.50
0.20
0.10
0.1
τJ
0.05
0.02
0.01
R1
R1
τJ
τ1
τ1
R2
R2
τ2
τ3
τ2
Ci= τi/Ri
Ci= i/Ri
SINGLE PULSE
( THERMAL RESPONSE )
0.01
R3
R3
τC
τ
τ3
Ri (°C/W) τi (sec)
0.0429 0.000001
1.3417
0.000178
1.0154
0.000627
Notes:
1. Duty Factor D = t1/t2
2. Peak Tj = P dm x Zthjc + Tc
0.001
1E-006
1E-005
0.0001
0.001
0.01
0.1
1
t1 , Rectangular Pulse Duration (sec)
Fig 18. Maximum Transient Thermal Impedance, Junction-to-Case (IGBT)
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7
IRGB4B60KPbF
IRGS/SL4B60K
L
L
VCC
DUT
80 V
+
-
0
DUT
480V
Rg
1K
Fig.C.T.2 - RBSOA Circuit
Fig.C.T.1 - Gate Charge Circuit (turn-off)
diode clamp /
DUT
Driver
L
- 5V
360V
DC
DUT /
DRIVER
DUT
VCC
Rg
Fig.C.T.3 - S.C.SOA Circuit
Fig.C.T.4 - Switching Loss Circuit
R=
DUT
VCC
ICM
VCC
Rg
Fig.C.T.5 - Resistive Load Circuit
8
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IRGB4B60KPbF
IRGS/SL4B60K
700
14
700
12
600
14
tf
600
tr
12
Vce
Vce
500
10
Ice
500
90% Ice
8
400
6
5% Ice
200
Vce (V)
Ice (A)
Vce (V)
5% Vce
10% Ice
5% Vce
300
8
6
4
200
4
100
2
100
2
0
0
0
Ice (A)
400
300
10
90% Ice
Ice
0
Eon
Loss
Eoff Loss
-100
-2
0.4
0.6
0.8
1
-100
0.35
1.2
0.45
Time (uS)
0.65
Time (uS)
Fig. WF1- Typ. Turn-off Loss Waveform
@ TJ = 150°C using Fig. CT.4
Fig. WF2- Typ. Turn-on Loss Waveform
@ TJ = 150°C using Fig. CT.4
400
40
Vce
350
35
300
30
25
250
200
20
I(A)
CE (A)
Ice
150
15
I
VCE (V)
-2
0.55
100
10
50
5
0
0
-5
-50
30
40
50
60
70
Time (uS)
Fig. WF3- Typ. S.C Waveform
@ TC = 150°C using Fig. CT.3
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9
IRGB4B60KPbF
IRGS/SL4B60K
TO-220AB Package Outline
Dimensions are shown in millimeters (inches)
2.87 (.113)
2.62 (.103)
10.54 (.415)
10.29 (.405)
-B-
3.78 (.149)
3.54 (.139)
4.69 (.185)
4.20 (.165)
-A-
1.32 (.052)
1.22 (.048)
6.47 (.255)
6.10 (.240)
4
15.24 (.600)
14.84 (.584)
LEAD ASSIGNMENTS
1.15 (.045)
MIN
1
2
3
1234-
14.09 (.555)
13.47 (.530)
1.40 (.055)
1.15 (.045)
2 - DRAIN
GATE
3 - SOURCE
DRAIN
SOURCE
4 - DRAIN
DRAIN
IGBTs, CoPACK
1- GATE
2- COLLECTOR
3- EMITTER
4- COLLECTOR
4.06 (.160)
3.55 (.140)
3X
3X
LEAD ASSIGNMENTS
HEXFET
1 - GATE
0.93 (.037)
0.69 (.027)
0.36 (.014)
3X
M
B A M
2.92 (.115)
2.64 (.104)
2.54 (.100)
2X
NOTES:
1 DIMENSIONING & TOLERANCING PER ANSI Y14.5M, 1982.
2 CONTROLLING DIMENSION : INCH
0.55 (.022)
0.46 (.018)
3 OUTLINE CONFORMS TO JEDEC OUTLINE TO-220AB.
4 HEATSINK & LEAD MEASUREMENTS DO NOT INCLUDE BURRS.
TO-220AB Part Marking Information
E XAMPL E : T HIS IS AN IR F 1010
L OT CODE 1789
AS S E MB L E D ON WW 19, 1997
IN T HE AS S E MB L Y L INE "C"
Note: "P" in assembly line
position indicates "Lead-Free"
INT E R NAT IONAL
R E CT IF IE R
L OGO
AS S E MB L Y
L OT CODE
10
PAR T NU MB E R
DAT E CODE
YE AR 7 = 1997
WE E K 19
L INE C
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IRGB4B60KPbF
IRGS/SL4B60K
D2Pak Package Outline
Dimensions are shown in millimeters (inches)
D2Pak Part Marking Information
T HIS IS AN IRF 530S WIT H
L OT CODE 8024
AS S E MBL E D ON WW 02, 2000
IN T H E AS S E MB LY LINE "L"
INT E RNAT IONAL
RE CT IF IE R
LOGO
Note: "P" in as s embly line
pos ition indicates "Lead-F ree"
PART NUMB E R
F 530S
AS S E MB LY
LOT CODE
DAT E CODE
YE AR 0 = 2000
WE E K 02
LINE L
OR
INT E RNAT IONAL
RE CT IFIER
LOGO
AS S E MBL Y
L OT CODE
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PART NU MBE R
F 530S
DAT E CODE
P = DES IGNATE S LE AD-F R EE
PRODUCT (OPT IONAL )
YEAR 0 = 2000
WE EK 02
A = AS S EMB LY S IT E CODE
11
IRGB4B60KPbF
IRGS/SL4B60K
TO-262 Package Outline
Dimensions are shown in millimeters (inches)
TO-262 Part Marking Information
E XAMPLE : T HIS IS AN IRL 3103L
L OT CODE 1789
AS S E MB LE D ON WW 19, 1997
IN T HE AS S E MB LY LINE "C"
Note: "P" in as s embly line
pos ition indicates "Lead-F ree"
INT E R NAT IONAL
RE CT IF IE R
LOGO
AS S E MB LY
LOT CODE
PAR T NU MB E R
DAT E CODE
YE AR 7 = 1997
WE E K 19
LINE C
OR
INT E R NAT IONAL
R E CT IF IE R
LOGO
AS S E MB L Y
LOT CODE
12
PAR T NU MB E R
DAT E CODE
P = DE S IGNAT E S L E AD-F RE E
PR ODU CT (OPT IONAL)
YE AR 7 = 1997
WE E K 19
A = AS S E MB L Y S IT E CODE
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IRGB4B60KPbF
IRGS/SL4B60K
D2Pak Tape & Reel Information
Dimensions are shown in millimeters (inches)
TRR
1.60 (.063)
1.50 (.059)
4.10 (.161)
3.90 (.153)
FEED DIRECTION 1.85 (.073)
1.65 (.065)
1.60 (.063)
1.50 (.059)
0.368 (.0145)
0.342 (.0135)
11.60 (.457)
11.40 (.449)
15.42 (.609)
15.22 (.601)
24.30 (.957)
23.90 (.941)
TRL
10.90 (.429)
10.70 (.421)
1.75 (.069)
1.25 (.049)
4.72 (.136)
4.52 (.178)
16.10 (.634)
15.90 (.626)
FEED DIRECTION
13.50 (.532)
12.80 (.504)
27.40 (1.079)
23.90 (.941)
4
330.00
(14.173)
MAX.
60.00 (2.362)
MIN.
NOTES :
1. COMFORMS TO EIA-418.
2. CONTROLLING DIMENSION: MILLIMETER.
3. DIMENSION MEASURED @ HUB.
4. INCLUDES FLANGE DISTORTION @ OUTER EDGE.
26.40 (1.039)
24.40 (.961)
3
30.40 (1.197)
MAX.
4
Notes:
 VCC = 80% (VCES), VGE = 20V, L = 100µH, RG = 50Ω.
‚ When mounted on 1" square PCB ( FR-4 or G-10 Material ). For recommended footprint and soldering techniques
refer to application note #AN-994.
ƒ Energy losses include "tail" and diode reverse recovery, using Diode FD059H06A5.
TO-220AB package is not recommended for Surface Mount Application.
Data and specifications subject to change without notice.
This product has been designed and qualified for Industrial market.
Qualification Standards can be found on IR’s Web site.
IR WORLD HEADQUARTERS: 233 Kansas St., El Segundo, California 90245, USA Tel: (310) 252-7105
TAC Fax: (310) 252-7903
Visit us at www.irf.com for sales contact information. 07/04
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13
Note: For the most current drawings please refer to the IR website at:
http://www.irf.com/package/