NPN Silicon AF Transistors BCX 58 BCX 59 High current gain ● Low collector-emitter saturation voltage ● Complementary types: BCX 78, BCX 79 (PNP) ● 2 3 1 Type Marking Ordering Code Pin Configuration 1 2 3 Package1) BCX 58 VIII BCX 58 IX BCX 58 X BCX 59 VIII BCX 59 IX BCX 59 X – Q62702-C619 Q62702-C620 Q62702-C621 Q62702-C623 Q62702-C624 Q62702-C625 C TO-92 B E Maximum Ratings Parameter Symbol BCX 58 Values BCX 59 Unit Collector-emitter voltage VCE0 32 45 Collector-base voltage VCB0 32 45 Emitter-base voltage VEB0 Collector current IC 100 Peak collector current ICM 200 Peak base current IBM 200 Total power dissipation, TC = 70 ˚C Ptot 500 mW Junction temperature Tj 150 ˚C Storage temperature range Tstg V 7 mA – 65 … + 150 Thermal Resistance Junction - ambient Rth JA ≤ 250 Junction - case2) Rth JC ≤ 160 1) 2) K/W For detailed information see chapter Package Outlines. Mounted on Al heat sink 15 mm × 25 mm × 0.5 mm. Semiconductor Group 1 5.91 BCX 58 BCX 59 Electrical Characteristics at TA = 25 ˚C, unless otherwise specified. Parameter Symbol Values min. typ. Unit max. DC characteristics Collector-emitter breakdown voltage IC = 2 mA BCX 58 BCX 59 V(BR)CE0 Collector-base breakdown voltage IC = 10 µA BCX 58 BCX 59 V(BR)CB0 Emitter-base breakdown voltage IE = 1 µA V(BR)EB0 Collector cutoff current VCB = 32 V VCB = 45 V VCB = 32 V, TA = 150 ˚C VCB = 45 V, TA = 150 ˚C ICEX Emitter cutoff current VEB = 4 V IEB0 DC current gain IC = 10 µA, VCE = 5 V BCX 58 VII, BCX 58 VIII, BCX 58 IX, BCX 58 X, IC = 2 mA, VCE = 5 V BCX 58 VII, BCX 58 VIII, BCX 58 IX, BCX 58 X, IC = 100 mA, VCE = 1 V1) BCX 58 VII, BCX 58 VIII, BCX 58 IX, BCX 58 X, hFE – – – – 32 45 – – – – 7 – – – – – – – – – – 20 20 10 10 – – – – 20 20 – – 20 nA – 20 20 40 100 78 145 220 300 – – – – BCX 59 VII BCX 59 VIII BCX 59 IX BCX 59 X 120 180 250 380 170 250 350 500 220 310 460 630 BCX 59 VII BCX 59 VIII BCX 59 IX BCX 59 X 40 45 60 60 – – – – – – – – 2 nA nA µA µA µA BCX 59 VII BCX 59 VIII BCX 59 IX BCX 59 X Pulse test: t ≤ 300 µs, D ≤ 2 %. Semiconductor Group 32 45 ICB0 BCX 58 BCX 59 BCX 58 BCX 59 Collector cutoff current VCE = 32 V, VBE = 0.2 V,TA = 100 ˚C VCE = 45 V, VBE = 0.2 V,TA = 100 ˚C 1) V BCX 58 BCX 59 Electrical Characteristics at TA = 25 ˚C, unless otherwise specified. Parameter Symbol Values Unit min. typ. max. DC characteristics Collector-emitter saturation voltage1) IC = 100 mA, IB = 2.5 mA VCEsat – – 0.5 Base-emitter saturation voltage1) IC = 100 mA, IB = 2.5 mA VBEsat – – 1.0 Base-emitter voltage IC = 10 µA, VCE = 5 V IC = 2 mA, VCE = 5 V IC = 100 mA, VCE = 1 V 1) VBE(on) – 0.55 – 0.52 0.65 0.83 – 0.75 – 1) Pulse test: t ≤ 300 µs, D ≤ 2 %. Semiconductor Group 3 V BCX 58 BCX 59 Electrical Characteristics at TA = 25 ˚C, unless otherwise specified. Parameter Symbol Values Unit min. typ. max. AC characteristics Transition frequency IC = 20 mA, VCE = 5 V, f = 100 MHz fT – 200 – MHz Output capacitance VCB = 10 V, f = 1 MHz Cobo – 3 – pF Input capacitance VCB = 0.5 V, f = 1 MHz Cibo – 8 – Short-circuit input impedance IC = 2 mA, VCE = 5 V, f = 1 kHz BCX 58 VII, BCX 58 VIII, BCX 58 IX, BCX 58 X, h11e – – – – BCX 59 VII BCX 59 VIII BCX 59 IX BCX 59 X Open-circuit reverse voltage transfer ratio IC = 2 mA, VCE = 5 V, f = 1 kHz BCX 58 VII, BCX 59 VII BCX 58 VIII, BCX 59 VIII BCX 58 IX, BCX 59 IX BCX 58 X, BCX 59 X h12e Short-circuit forward current transfer ratio IC = 2 mA, VCE = 5 V, f = 1 kHz BCX 58 VII, BCX 59 VII BCX 58 VIII, BCX 59 VIII BCX 58 IX, BCX 59 IX BCX 58 X, BCX 59 X h21e Open-circuit output admittance IC = 2 mA, VCE = 5 V, f = 1 kHz BCX 58 VII, BCX 58 VIII, BCX 58 IX, BCX 58 X, h22e F 4 – – – – 1.5 2.0 2.0 3.0 – – – – – – – – – BCX 59 VII BCX 59 VIII BCX 59 IX BCX 59 X 2.7 3.6 4.5 7.5 10–4 – – – – Noise figure IC = 0.2 mA, VCE = 5 V, RS = 2 kΩ f = 1 kHz, ∆f = 200 Hz Semiconductor Group kΩ 200 260 330 520 – – – – µS – – – – 18 24 30 50 – – – – – 2 – dB BCX 58 BCX 59 Total power dissipation Ptot = f (TA; TC) Collector current IC = f (VBE) VCE = 5 V (common emitter configuration) Permissible pulse load RthJA = f (tp) DC current gain hFE = f (IC) VCE = 5 V (common emitter configuration) Semiconductor Group 5 BCX 58 BCX 59 Collector cutoff current ICB0 = f (TA) VCB = 45 V Transition frequency fT = f (IC) VCE = 5 V, f = 100 MHz Base-emitter saturation voltage IC = f (VBEsat) hFE = 20 Collector-emitter saturation voltage IC = f (VCEsat) hFE = 20 Semiconductor Group 6