DISCRETE SEMICONDUCTORS DATA SHEET BFS17A NPN 3 GHz wideband transistor Product specification File under Discrete Semiconductors, SC14 September1995 Philips Semiconductors Product specification NPN 3 GHz wideband transistor BFS17A DESCRIPTION NPN transistor in a plastic SOT23 package. 3 handbook, halfpage APPLICATIONS • It is intended for RF applications such as oscillators in TV tuners. 1 2 Top view PINNING PIN MSB003 DESCRIPTION 1 base 2 emitter 3 collector Marking code: E2p. Fig.1 SOT23. QUICK REFERENCE DATA SYMBOL PARAMETER CONDITIONS TYP. MAX. UNIT VCBO collector-base voltage open emitter − 25 V VCEO collector-emitter voltage open base − 15 V IC DC collector current − 25 mA Ptot total power dissipation up to Ts = 70 °C; note 1 − 300 mW fT transition frequency IC = 25 mA; VCE = 5 V; f = 500 MHz; Tamb = 25 °C 2.8 − GHz GUM maximum unilateral power gain IC = 14 mA; VCE = 10 V; f = 800 MHz 13.5 − dB F noise figure IC = 2 mA; VCE = 5 V; f = 800 MHz; Tamb = 25 °C 2.5 − dB VO output voltage dim = −60 dB; IC = 14 mA; VCE = 10 V; RL = 75 Ω; Tamb = 25 °C; f(p+q−r) = 793.25 MHz 150 − mV LIMITING VALUES In accordance with the Absolute Maximum Rating System (IEC 134). SYMBOL PARAMETER CONDITIONS MIN. MAX. UNIT VCBO collector-base voltage open emitter − 25 V VCEO collector-emitter voltage open base − 15 V VEBO emitter-base voltage open collector − 2.5 V IC DC collector current − 25 mA ICM peak collector current − 50 mA Ptot total power dissipation − 300 mW Tstg storage temperature −65 +150 °C Tj junction temperature − 150 °C up to Ts = 70 °C; note 1 Note to the Quick reference data and the Limiting values 1. Ts is the temperature at the soldering point of the collector pin. September1995 2 Philips Semiconductors Product specification NPN 3 GHz wideband transistor BFS17A THERMAL CHARACTERISTICS SYMBOL Rth j-s PARAMETER CONDITIONS thermal resistance from junction to soldering point VALUE UNIT 260 K/W up to Ts = 70 °C; note 1 Note 1. Ts is the temperature at the soldering point of the collector pin. CHARACTERISTICS Tj = 25 °C unless otherwise specified. SYMBOL PARAMETER ICBO collector cut-off current hFE DC current gain CONDITIONS IE = 0; VCB = 10 V MIN. − TYP. − MAX. 50 IC = 2 mA; VCE = 1 V; Tamb = 25 °C 25 90 − IC = 25 mA; VCE = 1 V; Tamb = 25 °C 25 90 − UNIT nA fT transition frequency IC = 25 mA; VCE = 5 V; f = 500 MHz; Tamb = 25 °C − 2.8 − GHz Cc collector capacitance IE = 0; VCB = 10 V; f = 1 MHz; Tamb = 25 °C − 0.7 − pF Ce emitter capacitance IC = 0; VEB = 0.5 V; f = 1 MHz − 1.25 − pF Cre feedback capacitance IC = 0; VCE = 5 V; f = 1 MHz − 0.6 − pF GUM maximum unilateral power gain note 1 IC = 14 mA; VCE = 10 V; f = 800 MHz − 13.5 − dB F noise figure IC = 2 mA; VCE = 5 V; ZS = 60 Ω; f = 800 MHz; Tamb = 25 °C − 2.5 − dB VO output voltage note 2 − 150 − mV Notes 2 S 21 1. GUM is the maximum unilateral power gain, assuming S12 is zero and G UM = 10 log -------------------------------------------------------------- dB. 2 2 1 – S 11 1 – S 22 2. dim = −60 dB (DIN 45004B); IC = 14 mA; VCE = 10 V; RL = 75 Ω; Tamb = 25 °C; Vp = VO; fp = 795.25 MHz; Vq = VO −6 dB; fq = 803.25 MHz; Vr = VO −6 dB; fr = 805.25 MHz; measured at f(p+q−r) = 793.25 MHz. September1995 3 Philips Semiconductors Product specification NPN 3 GHz wideband transistor BFS17A 1.5 nF handbook, full pagewidth 1.5 nF VCC VBB L3 10 kΩ L2 1 nF 1 nF 75 Ω input L1 1 nF 270 Ω 75 Ω output DUT 18 Ω 3.3 pF 0.68 pF MBB251 L1 = L3 = 5 µH Ferroxcube choke. L2 = 3 turns 0.4 mm copper wire; winding pitch 1 mm; internal diameter 3 mm. Fig.2 Intermodulation distortion and second order intermodulation distortion test circuit. MEA395 100 MEA903 1 handbook, halfpage handbook, halfpage hFE Cc (pF) 50 0.5 0 0 0 10 20 IC (mA) 30 0 VCE = 1 V; Tamb = 25 °C. Fig.3 September1995 4 8 12 VCB (V) 16 IE = 0; f = 1 MHz; Tamb = 25 °C. DC current gain as a function of collector current. Fig.4 4 Collector capacitance as a function of collector-base voltage. Philips Semiconductors Product specification NPN 3 GHz wideband transistor BFS17A MEA904 4 MEA902 5 handbook, halfpage handbook, halfpage fT (GHz) F (dB) 4 3 3 2 2 1 1 0 0 0 20 IC (mA) 0 40 VCE = 5 V; f = 500 MHz; Tamb = 25 °C. Fig.5 IC (mA) 20 VCE = 5 V; Zs = 60 Ω; f = 800 MHz; Tamb = 25 °C. Transition frequency as a function of collector current. September1995 10 Fig.6 5 Minimum noise figure as a function of collector current. Philips Semiconductors Product specification NPN 3 GHz wideband transistor BFS17A PACKAGE OUTLINE 3.0 2.8 handbook, full pagewidth 0.150 0.090 0.55 0.45 B 1.9 0.95 2 1 0.1 max 10 o max 0.2 M A A 1.4 1.2 2.5 max 10 o max 3 1.1 max 30 o max 0.48 0.38 0.1 M A B MBC846 TOP VIEW Dimensions in mm. Fig.7 SOT23. DEFINITIONS Data sheet status Objective specification This data sheet contains target or goal specifications for product development. Preliminary specification This data sheet contains preliminary data; supplementary data may be published later. Product specification This data sheet contains final product specifications. Limiting values Limiting values given are in accordance with the Absolute Maximum Rating System (IEC 134). Stress above one or more of the limiting values may cause permanent damage to the device. These are stress ratings only and operation of the device at these or at any other conditions above those given in the Characteristics sections of the specification is not implied. Exposure to limiting values for extended periods may affect device reliability. Application information Where application information is given, it is advisory and does not form part of the specification. LIFE SUPPORT APPLICATIONS These products are not designed for use in life support appliances, devices, or systems where malfunction of these products can reasonably be expected to result in personal injury. Philips customers using or selling these products for use in such applications do so at their own risk and agree to fully indemnify Philips for any damages resulting from such improper use or sale. September1995 6