DISCRETE SEMICONDUCTORS DATA SHEET BFG17A NPN 3 GHz wideband transistor Product specification File under Discrete Semiconductors, SC14 1995 Sep 12 Philips Semiconductors Product specification NPN 3 GHz wideband transistor DESCRIPTION BFG17A PINNING NPN wideband transistor in a microminiature plastic SOT143 surface mounting envelope with double emitter bonding. It is intended for use in wideband aerial amplifiers using SMD technology. PIN DESCRIPTION handbook, 2 columns 4 Code: E6 1 collector 2 base 3 emitter 4 emitter 3 1 2 Top view MSB014 Fig.1 SOT143. QUICK REFERENCE DATA SYMBOL PARAMETER CONDITIONS MIN. TYP. MAX. UNIT VCBO collector-base voltage open emitter − − 25 V VCEO collector-emitter voltage open base − − 15 V IC DC collector current − − 50 mA Ptot total power dissipation up to Ts = 85 °C; note 1 − − 300 mW hFE DC current gain IC = 25 mA; VCE = 1 V; Tamb = 25 °C 20 − 150 fT transition frequency IC = 25 mA; VCE = 5 V; f = 500 MHz; Tamb = 25 °C − 2.8 − Cre feedback capacitance IC = 0; VCE = 5 V; f = 1 MHz − 0.4 − pF GUM maximum unilateral power gain IC = 15 mA; VCE = 10 V; f = 800 MHz; Tamb = 25 °C − 15 − dB F noise figure IC = 2 mA; VCE = 5 V; f = 800 MHz; Tamb = 25 °C; ZS = 60 Ω; bs = opt. − 2.5 − dB GHz LIMITING VALUES In accordance with the Absolute Maximum System (IEC 134). SYMBOL PARAMETER CONDITIONS MIN. MAX. UNIT VCBO collector-base voltage open emitter − 25 V VCEO collector-emitter voltage open base − 15 V VEBO emitter-base voltage open collector − 2.5 V IC DC collector current − 50 mA Ptot total power dissipation − 300 mW Tstg storage temperature −65 +150 °C Tj junction temperature − 175 °C up to Ts = 85 °C; note 1 Note 1. Ts is the temperature at the soldering point of the collector tab. 1995 Sep 12 2 Philips Semiconductors Product specification NPN 3 GHz wideband transistor BFG17A THERMAL CHARACTERISTICS SYMBOL Rth j-s PARAMETER CONDITIONS VALUE thermal resistance from junction up to Ts = 85 °C; note 1 to soldering point 290 UNIT K/W Note 1. Ts is the temperature at the soldering point of the collector tab. CHARACTERISTICS Tj = 25 °C unless otherwise specified. SYMBOL PARAMETER CONDITIONS MIN. TYP. MAX. UNIT ICBO collector cut-off current IE = 0; VCB = 10 V − − 50 hFE DC current gain IC = 25 mA; VCE = 1 V; Tamb = 25 °C 20 75 150 fT transition frequency IC = 25 mA; VCE = 5 V; f = 500 MHz; Tamb = 25 °C − 2.8 − GHz Cc collector capacitance IE = 0; VCB = 10 V; f = 1 MHz; Tamb = 25 °C − 0.7 − pF Ce emitter capacitance IC = 0; VEB = 0.5 V; f = 1 MHz − 1.25 − pF Cre feedback capacitance IC = 0; VCE = 5 V; f = 1 MHz − 0.4 − pF GUM maximum unilateral power gain (note 1) IC = 15 mA; VCE = 10 V; f = 800 MHz; Tamb = 25 °C − 15 − dB F noise figure IC = 2 mA; VCE = 5 V; f = 800 MHz; Tamb = 25 °C; ZS = 60 Ω; bs = opt. − 2.5 − dB Vo output voltage note 2 − 150 − mV Notes nA s 21 2 dB. . 1. GUM is the maximum unilateral power gain, assuming S12 is zero and G UM = 10 log -----------------------------------------------------------( 1 – s 11 2 ) ( 1 – s 22 2 ) 2. dim = −60 dB (DIN 45004B, para. 6,3: 3-tone); IC = 14 mA; VCE = 10 V; ZL = 75 Ω. Vp = Vo; fp = 795.25 MHz; Vq = Vo −6 dB; fq = 803.25 MHz; Vr = Vo −6 dB; fr = 805.25 MHz; measured at f(p+q−r) = 793.25 MHz. 1995 Sep 12 3 Philips Semiconductors Product specification NPN 3 GHz wideband transistor BFG17A 1.5 nF handbook, full pagewidth 1.5 nF VCC VBB L3 10 kΩ L2 1 nF 1 nF L1 1 nF 75 Ω input 270 Ω 75 Ω output DUT 18 Ω 3.3 pF 0.68 pF MBB251 (1) (2) L1 = L3 = 5 µH Ferroxcube choke. L2 = 3 turns 0.4 mm copper wire, internal diameter 3 mm, winding pitch 1 mm. Fig.2 Intermodulation distortion and second order intermodulation distortion MATV test circuit. MBB374 120 MBB370 1.2 handbook, halfpage handbook, halfpage Cc h FE (pF) 80 0.8 40 0.4 0 0 0 10 20 I C (mA) 0 30 1995 Sep 12 8 12 16 V CB (V) VCE = 1 V; Tamb = 25 °C. Fig.3 4 IE = 0; f = 1 MHz; Tamb = 25 °C DC current gain as function of collector current. Fig.4 4 Collector capacitance as a function of collector-base voltage. Philips Semiconductors Product specification NPN 3 GHz wideband transistor BFG17A MBB373 MBB371 4 40 handbook, halfpage handbook, halfpage G UM (dB) fT (GHz) 30 3 20 10 2 0 10 20 I C (mA) 0 102 30 VCE = 5 V; f = 500 MHz; Tamb = 25 °C. Fig.5 Transition frequency as a function of collector current. Fig.6 MBB372 5 F (dB) 4 3 2 1 0 4 8 12 16 20 I C (mA) VCE = 5 V; f = 800 MHz; Tamb = 25 °C; ZS = 60 Ω; bs = opt. Fig.7 1995 Sep 12 f (MHz) 104 IC = 15 mA; VCE = 10 V; Tamb = 25 °C. handbook, halfpage 0 10 3 Minimum noise figure as a function of collector current. 5 Maximum unilateral power gain as a function of frequency. Philips Semiconductors Product specification NPN 3 GHz wideband transistor BFG17A 1 handbook, full pagewidth 0.5 2 0.2 5 2000 MHz 1200 +j 0.2 0 1000 10 1500 0.5 1 2 5 ∞ 10 800 –j 500 10 40 MHz 0.2 5 200 100 2 0.5 MBB375 1 IC = 15 mA; VCE = 10 V;Tamb = 25 °C; Zo = 50 Ω. Fig.8 Common emitter input reflection coefficient (S11). 90 o handbook, full pagewidth 60 o 120 o 150 o 30 o 100 200 500 40 MHz 800 50 180 o 30 10 0o 2000 MHz 30 o 150 o 60 o 120 o 90 o MBB378 IC = 15 mA; VCE = 10 V;Tamb = 25 °C. Fig.9 Common emitter forward transmission coefficient (S21). 1995 Sep 12 6 Philips Semiconductors Product specification NPN 3 GHz wideband transistor BFG17A 1 handbook, full pagewidth 0.5 2 0.2 5 10 +j 0.2 0 0.5 1 2 5 ∞ 10 40 MHz –j 500 200 800 1500 1000 100 1200 2000 MHz 0.2 10 5 2 0.5 MBB376 1 IC = 15 mA; VCE = 10 V;Tamb = 25 °C. Fig.10 Common emitter reverse transmission coefficient (S12). 2000 MHz 90 o handbook, full pagewidth 60 o 120 o 1500 1200 150 o 30 o 1000 800 500 180 o 1.0 0.6 0.2 200 100 40 MHz 0o 30 o 150 o 60 o 120 o 90 o MBB377 IC = 15 mA; VCE = 10 V;Tamb = 25 °C; Zo = 50 Ω. Fig.11 Common emitter output reflection coefficient (S22). 1995 Sep 12 7 Philips Semiconductors Product specification NPN 3 GHz wideband transistor BFG17A PACKAGE OUTLINE handbook, full pagewidth 0.75 0.60 3.0 2.8 0.150 0.090 B 1.9 4 3 0.1 max o 10 max 0.2 M A B A 1.4 1.2 2.5 max o 10 max 1 1.1 max o 30 max 0.88 2 0 0.1 0.48 0 0.1 1.7 TOP VIEW Dimensions in mm. Fig.12 SOT143. 1995 Sep 12 8 0.1 M A B MBC845 Philips Semiconductors Product specification NPN 3 GHz wideband transistor BFG17A DEFINITIONS Data sheet status Objective specification This data sheet contains target or goal specifications for product development. Preliminary specification This data sheet contains preliminary data; supplementary data may be published later. Product specification This data sheet contains final product specifications. Short-form specification The data in this specification is extracted from a full data sheet with the same type number and title. For detailed information see the relevant data sheet or data handbook. Limiting values Limiting values given are in accordance with the Absolute Maximum Rating System (IEC 134). Stress above one or more of the limiting values may cause permanent damage to the device. These are stress ratings only and operation of the device at these or at any other conditions above those given in the Characteristics sections of the specification is not implied. Exposure to limiting values for extended periods may affect device reliability. Application information Where application information is given, it is advisory and does not form part of the specification. LIFE SUPPORT APPLICATIONS These products are not designed for use in life support appliances, devices, or systems where malfunction of these products can reasonably be expected to result in personal injury. Philips customers using or selling these products for use in such applications do so at their own risk and agree to fully indemnify Philips for any damages resulting from such improper use or sale. 1995 Sep 12 9