PHILIPS BFS25A

DISCRETE SEMICONDUCTORS
DATA SHEET
BFS25A
NPN 5 GHz wideband transistor
Product specification
File under Discrete Semiconductors, SC14
December 1997
Philips Semiconductors
Product specification
NPN 5 GHz wideband transistor
FEATURES
BFS25A
PINNING
• Low current consumption
PIN
• Low noise figure
DESCRIPTION
Code: N6
• Gold metallization ensures
excellent reliability
• SOT323 envelope.
1
base
2
emitter
3
collector
handbook, 2 columns
3
DESCRIPTION
NPN transistor in a plastic SOT323
envelope.
It is designed for use in RF amplifiers
and oscillators in pagers and pocket
phones with signal frequencies up to
2 GHz.
1
2
Top view
MBC870
Fig.1 SOT323.
QUICK REFERENCE DATA
SYMBOL
PARAMETER
CONDITIONS
MIN.
TYP.
MAX.
UNIT
VCBO
collector-base voltage
open emitter
−
−
8
V
VCEO
collector-emitter voltage
open base
−
−
5
V
IC
DC collector current
−
−
6.5
mA
Ptot
total power dissipation
up to Ts = 170 °C; note 1
−
−
32
mW
hFE
DC current gain
IC = 0.5 mA; VCE = 1 V; Tj = 25 °C
50
80
200
fT
transition frequency
IC = 1 mA; VCE = 1 V; f = 1 GHz;
Tamb = 25 °C
3.5
5
−
GHz
GUM
maximum unilateral power gain
Ic = 0.5 mA; VCE = 1 V; f = 1 GHz;
Tamb = 25 °C
−
13
−
dB
F
noise figure
Ic = 0.5 mA; VCE = 1 V; f = 1 GHz;
Tamb = 25 °C
−
1.8
−
dB
MAX.
UNIT
LIMITING VALUES
In accordance with the Absolute Maximum System (IEC 134).
SYMBOL
PARAMETER
CONDITIONS
MIN.
VCBO
collector-base voltage
open emitter
−
8
V
VCEO
collector-emitter voltage
open base
−
5
V
VEBO
emitter-base voltage
open collector
−
2
V
IC
DC collector current
−
6.5
mA
Ptot
total power dissipation
−
32
mW
Tstg
storage temperature
up to Ts = 170 °C; note 1
−65
150
°C
Tj
junction temperature
−
175
°C
Note
1. Ts is the temperature at the soldering point of the collector tab.
December 1997
2
Philips Semiconductors
Product specification
NPN 5 GHz wideband transistor
BFS25A
THERMAL RESISTANCE
SYMBOL
PARAMETER
CONDITIONS
thermal resistance from junction to
soldering point
Rth j-s
THERMAL RESISTANCE
up to Ts = 170 °C; note 1
190 K/W
Note
1. Ts is the temperature at the soldering point of the collector tab.
CHARACTERISTICS
Tj = 25 °C, unless otherwise specified.
SYMBOL
PARAMETER
CONDITIONS
MIN.
TYP.
MAX.
UNIT
IE = 0; VCB = 5 V
−
−
50
nA
ICBO
collector cut-off current
hFE
DC current gain
IC = 0.5 mA; VCE = 1 V
50
80
200
Cre
feedback capacitance
IC = 0; VCB = 1 V; f = 1 MHz
−
0.3
0.45
pF
fT
transition frequency
IC = 1 mA; VCE = 1 V; f = 1 GHz;
Tamb = 25 °C
3.5
5
−
GHz
GUM
maximum unilateral power gain
(note 1)
IC = 0.5 mA; VCE = 1 V; f = 1 GHz;
Tamb = 25 °C
−
13
−
dB
F
noise figure
Γs = Γopt; IC = 0.5 mA; VCE = 1 V;
f = 1 GHz; Tamb = 25 °C
−
1.8
−
dB
Γs = Γopt; IC = 1 mA; VCE = 1 V;
f = 1 GHz; Tamb = 25 °C
−
2
−
dB
Note
1. GUM is the maximum unilateral power gain, assuming S12 is zero and
2
G UM
S 21
- dB.
= 10 log ------------------------------------------------------------2 
2

 1 – S 11   1 – S 22 
December 1997
3
Philips Semiconductors
Product specification
NPN 5 GHz wideband transistor
BFS25A
MRC037
MRC038 - 1
100
handbook,40
halfpage
handbook, halfpage
h FE
P tot
(mW)
80
30
60
20
40
10
20
0
10−3
0
0
50
100
150
Ts (oC)
200
10−2
10−1
1
I C (mA)
10
VCE = 1 V; Tj = 25 °C.
Fig.2 Power derating curve.
Fig.3
DC current gain as a function of collector
current.
MRC032
MRC031
0.5
10
handbook, halfpage
handbook, halfpage
C re
(pF)
fT
(GHz)
8
0.4
VCE = 3 V
1V
0.3
6
0.2
4
0.1
2
0
0
0
1
2
3
4
0
5
VCB (V)
0.5
IC = 0; f = 1 MHz.
f = 1 GHz; Tamb = 25 °C.
Fig.4
Fig.5
Feedback capacitance as a function of
collector-base voltage.
December 1997
4
1
1.5
2
2.5
I C (mA)
Transition frequency as a function of
collector current.
Philips Semiconductors
Product specification
NPN 5 GHz wideband transistor
BFS25A
In Figs 6 to 9, GUM = maximum unilateral power gain;
MSG = maximum stable gain; Gmax = maximum available
gain.
MRC036
20
handbook, halfpage
G UM
(dB)
16
MRC035
25
gain
(dB)
handbook, halfpage
VCE = 3 V
1V
G UM
20
12
15
8
MSG
10
4
5
0
0
0.5
1
1.5
2
2.5
I C (mA)
0
0
0.5
1
1.5
2
2.5
I C (mA)
f = 1 GHz; Tamb = 25 °C.
VCE = 1 V; f = 500 MHz; Tamb = 25 °C.
Fig.7
Fig.6 Gain as a function of collector current.
MRC034
50
Maximum unilateral power gain as a
function of collector current.
MRC033
50
gain
(dB)
handbook, halfpage
handbook, halfpage
gain
(dB)
40
40
G UM
G UM
30
30
20
20
MSG
MSG
10
10
G max
G max
0
0.01
0.1
1
f (GHz)
0
10−2
10
1
f (GHz)
10
IC = 1 mA; VCE = 1 V; Tamb = 25 °C.
IC = 0.5 mA; VCE = 1 V; Tamb = 25 °C.
Fig.8 Gain as a function of frequency.
December 1997
10−1
Fig.9 Gain as a function of frequency.
5
Philips Semiconductors
Product specification
NPN 5 GHz wideband transistor
BFS25A
MCD145
4
MCD146
4
handbook, halfpage
handbook, halfpage
F
(dB)
F
(dB)
f = 2 GHz
3
IC = 2 mA
3
1 GHz
1 mA
500 MHz
2
2
1
1
0
10−1
1
0
102
10
IC (mA)
0.5 mA
103
f (MHz)
104
VCE = 1 V; Tamb = 25 °C.
VCE = 1 V; Tamb = 25 °C.
Fig.10 Minimum noise figure as a function of
collector current.
Fig.11 Minimum noise figure as a function of
frequency.
90°
pot. unst.
region
handbook, full pagewidth
1.0
1
135°
2
0.5
0.8
45°
0.6
stability
circle
180°
0.2
MSG = 13.9 dB
0.2
0
0.5
0.4
5
1
0.2
ΓOPT
5
2
0°
F = 2.5 dB
12 dB
0
F = 4 dB
0.2
10 dB
5
Fmin = 1.9 dB
F = 6 dB
−135°
0.5
2
−45°
1
MRC075
−90°
IC = 1 mA; VCE = 1 V;
f = 500 MHz; Zo = 50 Ω.
Fig.12 Noise circle.
December 1997
6
1.0
Philips Semiconductors
Product specification
NPN 5 GHz wideband transistor
BFS25A
90°
handbook, full pagewidth
1.0
1
135°
0.8
45°
2
0.5
0.6
stability
circle
MSG = 11.1 dB
0.2
0.4
5
ΓOPT
180°
0.2
0
0.5
1
2
10 dB
5
0°
F = 3 dB
F = 4 dB
5
F = 6 dB
0.5
−135°
0
Fmin = 2 dB
8 dB
0.2
0.2
2
−45°
1
MRA076
1.0
−90°
IC = 1 mA; VCE = 1 V;
f = 1 GHz; Zo = 50 Ω.
Fig.13 Noise circle.
90°
Gmax = 7. 5 dB
handbook, full pagewidth
1.0
1
135°
2
0.5
0.8
45°
0.6
7 dB
Fmin = 2.4 dB
0.2
0.4
5
ΓOPT
180°
0.2
0
0.5
1
5 dB
0.2
F = 2.5 dB
2
5
0°
0
F = 4 dB
3 dB
0.2
−135°
5
F = 6 dB
0.5
2
−45°
1
MRC051
−90°
IC = 1 mA; VCE = 1 V;
f = 2 GHz; Zo = 50 Ω.
Fig.14 Noise circle.
December 1997
7
1.0
Philips Semiconductors
Product specification
NPN 5 GHz wideband transistor
BFS25A
90°
handbook, full pagewidth
1.0
1
135°
0.8
45°
2
0.5
0.6
0.2
0.4
5
0.2
180°
0.2
0
0.5
1
2
5
0°
40 MHz
0
3 GHz
5
0.2
0.5
−135°
2
−45°
1
MRA052
−90°
IC = 1 mA; VCE = 1 V;
Zo = 50 Ω.
Fig.15 Common emitter input reflection coefficient (S11).
90°
handbook, full pagewidth
135°
45°
3 GHz
40 MHz
180°
5
4
3
2
0°
1
−135°
−45°
−90°
MRC053
IC = 1 mA; VCE = 1 V.
Fig.16 Common emitter forward transmission coefficient (S21).
December 1997
8
1.0
Philips Semiconductors
Product specification
NPN 5 GHz wideband transistor
BFS25A
90°
handbook, full pagewidth
135°
45°
3 GHz
40 MHz
180°
0.5
0.4
0.3
0.2
0°
0.1
−135°
−45°
−90°
MRC054
IC = 1 mA; VCE = 1 V.
Fig.17 Common emitter reverse transmission coefficient (S12).
90°
handbook, full pagewidth
1.0
1
135°
0.8
45°
2
0.5
0.6
0.2
0.4
5
0.2
180°
0.2
0
0.5
1
2
5
40 MHz
0°
0
5
0.2
3 GHz
−135°
0.5
2
−45°
1
MRC055
−90°
IC = 1 mA; VCE = 1 V;
Zo = 50 Ω.
Fig.18 Common emitter output reflection coefficient (S22).
December 1997
9
1.0
Philips Semiconductors
Product specification
NPN 5 GHz wideband transistor
BFS25A
PACKAGE OUTLINE
Plastic surface mounted package; 3 leads
SOT323
D
E
B
A
X
HE
y
v M A
3
Q
A
A1
c
1
2
e1
bp
Lp
w M B
e
detail X
0
1
2 mm
scale
DIMENSIONS (mm are the original dimensions)
UNIT
A
A1
max
bp
c
D
E
e
e1
HE
Lp
Q
v
w
mm
1.1
0.8
0.1
0.4
0.3
0.25
0.10
2.2
1.8
1.35
1.15
1.3
0.65
2.2
2.0
0.45
0.15
0.23
0.13
0.2
0.2
OUTLINE
VERSION
SOT323
December 1997
REFERENCES
IEC
JEDEC
EIAJ
SC-70
10
EUROPEAN
PROJECTION
ISSUE DATE
97-02-28
Philips Semiconductors
Product specification
NPN 5 GHz wideband transistor
BFS25A
DEFINITIONS
Data Sheet Status
Objective specification
This data sheet contains target or goal specifications for product development.
Preliminary specification
This data sheet contains preliminary data; supplementary data may be published later.
Product specification
This data sheet contains final product specifications.
Limiting values
Limiting values given are in accordance with the Absolute Maximum Rating System (IEC 134). Stress above one or
more of the limiting values may cause permanent damage to the device. These are stress ratings only and operation
of the device at these or at any other conditions above those given in the Characteristics sections of the specification
is not implied. Exposure to limiting values for extended periods may affect device reliability.
Application information
Where application information is given, it is advisory and does not form part of the specification.
LIFE SUPPORT APPLICATIONS
These products are not designed for use in life support appliances, devices, or systems where malfunction of these
products can reasonably be expected to result in personal injury. Philips customers using or selling these products for
use in such applications do so at their own risk and agree to fully indemnify Philips for any damages resulting from such
improper use or sale.
December 1997
11