DISCRETE SEMICONDUCTORS DATA SHEET BFS25A NPN 5 GHz wideband transistor Product specification File under Discrete Semiconductors, SC14 December 1997 Philips Semiconductors Product specification NPN 5 GHz wideband transistor FEATURES BFS25A PINNING • Low current consumption PIN • Low noise figure DESCRIPTION Code: N6 • Gold metallization ensures excellent reliability • SOT323 envelope. 1 base 2 emitter 3 collector handbook, 2 columns 3 DESCRIPTION NPN transistor in a plastic SOT323 envelope. It is designed for use in RF amplifiers and oscillators in pagers and pocket phones with signal frequencies up to 2 GHz. 1 2 Top view MBC870 Fig.1 SOT323. QUICK REFERENCE DATA SYMBOL PARAMETER CONDITIONS MIN. TYP. MAX. UNIT VCBO collector-base voltage open emitter − − 8 V VCEO collector-emitter voltage open base − − 5 V IC DC collector current − − 6.5 mA Ptot total power dissipation up to Ts = 170 °C; note 1 − − 32 mW hFE DC current gain IC = 0.5 mA; VCE = 1 V; Tj = 25 °C 50 80 200 fT transition frequency IC = 1 mA; VCE = 1 V; f = 1 GHz; Tamb = 25 °C 3.5 5 − GHz GUM maximum unilateral power gain Ic = 0.5 mA; VCE = 1 V; f = 1 GHz; Tamb = 25 °C − 13 − dB F noise figure Ic = 0.5 mA; VCE = 1 V; f = 1 GHz; Tamb = 25 °C − 1.8 − dB MAX. UNIT LIMITING VALUES In accordance with the Absolute Maximum System (IEC 134). SYMBOL PARAMETER CONDITIONS MIN. VCBO collector-base voltage open emitter − 8 V VCEO collector-emitter voltage open base − 5 V VEBO emitter-base voltage open collector − 2 V IC DC collector current − 6.5 mA Ptot total power dissipation − 32 mW Tstg storage temperature up to Ts = 170 °C; note 1 −65 150 °C Tj junction temperature − 175 °C Note 1. Ts is the temperature at the soldering point of the collector tab. December 1997 2 Philips Semiconductors Product specification NPN 5 GHz wideband transistor BFS25A THERMAL RESISTANCE SYMBOL PARAMETER CONDITIONS thermal resistance from junction to soldering point Rth j-s THERMAL RESISTANCE up to Ts = 170 °C; note 1 190 K/W Note 1. Ts is the temperature at the soldering point of the collector tab. CHARACTERISTICS Tj = 25 °C, unless otherwise specified. SYMBOL PARAMETER CONDITIONS MIN. TYP. MAX. UNIT IE = 0; VCB = 5 V − − 50 nA ICBO collector cut-off current hFE DC current gain IC = 0.5 mA; VCE = 1 V 50 80 200 Cre feedback capacitance IC = 0; VCB = 1 V; f = 1 MHz − 0.3 0.45 pF fT transition frequency IC = 1 mA; VCE = 1 V; f = 1 GHz; Tamb = 25 °C 3.5 5 − GHz GUM maximum unilateral power gain (note 1) IC = 0.5 mA; VCE = 1 V; f = 1 GHz; Tamb = 25 °C − 13 − dB F noise figure Γs = Γopt; IC = 0.5 mA; VCE = 1 V; f = 1 GHz; Tamb = 25 °C − 1.8 − dB Γs = Γopt; IC = 1 mA; VCE = 1 V; f = 1 GHz; Tamb = 25 °C − 2 − dB Note 1. GUM is the maximum unilateral power gain, assuming S12 is zero and 2 G UM S 21 - dB. = 10 log ------------------------------------------------------------2 2 1 – S 11 1 – S 22 December 1997 3 Philips Semiconductors Product specification NPN 5 GHz wideband transistor BFS25A MRC037 MRC038 - 1 100 handbook,40 halfpage handbook, halfpage h FE P tot (mW) 80 30 60 20 40 10 20 0 10−3 0 0 50 100 150 Ts (oC) 200 10−2 10−1 1 I C (mA) 10 VCE = 1 V; Tj = 25 °C. Fig.2 Power derating curve. Fig.3 DC current gain as a function of collector current. MRC032 MRC031 0.5 10 handbook, halfpage handbook, halfpage C re (pF) fT (GHz) 8 0.4 VCE = 3 V 1V 0.3 6 0.2 4 0.1 2 0 0 0 1 2 3 4 0 5 VCB (V) 0.5 IC = 0; f = 1 MHz. f = 1 GHz; Tamb = 25 °C. Fig.4 Fig.5 Feedback capacitance as a function of collector-base voltage. December 1997 4 1 1.5 2 2.5 I C (mA) Transition frequency as a function of collector current. Philips Semiconductors Product specification NPN 5 GHz wideband transistor BFS25A In Figs 6 to 9, GUM = maximum unilateral power gain; MSG = maximum stable gain; Gmax = maximum available gain. MRC036 20 handbook, halfpage G UM (dB) 16 MRC035 25 gain (dB) handbook, halfpage VCE = 3 V 1V G UM 20 12 15 8 MSG 10 4 5 0 0 0.5 1 1.5 2 2.5 I C (mA) 0 0 0.5 1 1.5 2 2.5 I C (mA) f = 1 GHz; Tamb = 25 °C. VCE = 1 V; f = 500 MHz; Tamb = 25 °C. Fig.7 Fig.6 Gain as a function of collector current. MRC034 50 Maximum unilateral power gain as a function of collector current. MRC033 50 gain (dB) handbook, halfpage handbook, halfpage gain (dB) 40 40 G UM G UM 30 30 20 20 MSG MSG 10 10 G max G max 0 0.01 0.1 1 f (GHz) 0 10−2 10 1 f (GHz) 10 IC = 1 mA; VCE = 1 V; Tamb = 25 °C. IC = 0.5 mA; VCE = 1 V; Tamb = 25 °C. Fig.8 Gain as a function of frequency. December 1997 10−1 Fig.9 Gain as a function of frequency. 5 Philips Semiconductors Product specification NPN 5 GHz wideband transistor BFS25A MCD145 4 MCD146 4 handbook, halfpage handbook, halfpage F (dB) F (dB) f = 2 GHz 3 IC = 2 mA 3 1 GHz 1 mA 500 MHz 2 2 1 1 0 10−1 1 0 102 10 IC (mA) 0.5 mA 103 f (MHz) 104 VCE = 1 V; Tamb = 25 °C. VCE = 1 V; Tamb = 25 °C. Fig.10 Minimum noise figure as a function of collector current. Fig.11 Minimum noise figure as a function of frequency. 90° pot. unst. region handbook, full pagewidth 1.0 1 135° 2 0.5 0.8 45° 0.6 stability circle 180° 0.2 MSG = 13.9 dB 0.2 0 0.5 0.4 5 1 0.2 ΓOPT 5 2 0° F = 2.5 dB 12 dB 0 F = 4 dB 0.2 10 dB 5 Fmin = 1.9 dB F = 6 dB −135° 0.5 2 −45° 1 MRC075 −90° IC = 1 mA; VCE = 1 V; f = 500 MHz; Zo = 50 Ω. Fig.12 Noise circle. December 1997 6 1.0 Philips Semiconductors Product specification NPN 5 GHz wideband transistor BFS25A 90° handbook, full pagewidth 1.0 1 135° 0.8 45° 2 0.5 0.6 stability circle MSG = 11.1 dB 0.2 0.4 5 ΓOPT 180° 0.2 0 0.5 1 2 10 dB 5 0° F = 3 dB F = 4 dB 5 F = 6 dB 0.5 −135° 0 Fmin = 2 dB 8 dB 0.2 0.2 2 −45° 1 MRA076 1.0 −90° IC = 1 mA; VCE = 1 V; f = 1 GHz; Zo = 50 Ω. Fig.13 Noise circle. 90° Gmax = 7. 5 dB handbook, full pagewidth 1.0 1 135° 2 0.5 0.8 45° 0.6 7 dB Fmin = 2.4 dB 0.2 0.4 5 ΓOPT 180° 0.2 0 0.5 1 5 dB 0.2 F = 2.5 dB 2 5 0° 0 F = 4 dB 3 dB 0.2 −135° 5 F = 6 dB 0.5 2 −45° 1 MRC051 −90° IC = 1 mA; VCE = 1 V; f = 2 GHz; Zo = 50 Ω. Fig.14 Noise circle. December 1997 7 1.0 Philips Semiconductors Product specification NPN 5 GHz wideband transistor BFS25A 90° handbook, full pagewidth 1.0 1 135° 0.8 45° 2 0.5 0.6 0.2 0.4 5 0.2 180° 0.2 0 0.5 1 2 5 0° 40 MHz 0 3 GHz 5 0.2 0.5 −135° 2 −45° 1 MRA052 −90° IC = 1 mA; VCE = 1 V; Zo = 50 Ω. Fig.15 Common emitter input reflection coefficient (S11). 90° handbook, full pagewidth 135° 45° 3 GHz 40 MHz 180° 5 4 3 2 0° 1 −135° −45° −90° MRC053 IC = 1 mA; VCE = 1 V. Fig.16 Common emitter forward transmission coefficient (S21). December 1997 8 1.0 Philips Semiconductors Product specification NPN 5 GHz wideband transistor BFS25A 90° handbook, full pagewidth 135° 45° 3 GHz 40 MHz 180° 0.5 0.4 0.3 0.2 0° 0.1 −135° −45° −90° MRC054 IC = 1 mA; VCE = 1 V. Fig.17 Common emitter reverse transmission coefficient (S12). 90° handbook, full pagewidth 1.0 1 135° 0.8 45° 2 0.5 0.6 0.2 0.4 5 0.2 180° 0.2 0 0.5 1 2 5 40 MHz 0° 0 5 0.2 3 GHz −135° 0.5 2 −45° 1 MRC055 −90° IC = 1 mA; VCE = 1 V; Zo = 50 Ω. Fig.18 Common emitter output reflection coefficient (S22). December 1997 9 1.0 Philips Semiconductors Product specification NPN 5 GHz wideband transistor BFS25A PACKAGE OUTLINE Plastic surface mounted package; 3 leads SOT323 D E B A X HE y v M A 3 Q A A1 c 1 2 e1 bp Lp w M B e detail X 0 1 2 mm scale DIMENSIONS (mm are the original dimensions) UNIT A A1 max bp c D E e e1 HE Lp Q v w mm 1.1 0.8 0.1 0.4 0.3 0.25 0.10 2.2 1.8 1.35 1.15 1.3 0.65 2.2 2.0 0.45 0.15 0.23 0.13 0.2 0.2 OUTLINE VERSION SOT323 December 1997 REFERENCES IEC JEDEC EIAJ SC-70 10 EUROPEAN PROJECTION ISSUE DATE 97-02-28 Philips Semiconductors Product specification NPN 5 GHz wideband transistor BFS25A DEFINITIONS Data Sheet Status Objective specification This data sheet contains target or goal specifications for product development. Preliminary specification This data sheet contains preliminary data; supplementary data may be published later. Product specification This data sheet contains final product specifications. Limiting values Limiting values given are in accordance with the Absolute Maximum Rating System (IEC 134). Stress above one or more of the limiting values may cause permanent damage to the device. These are stress ratings only and operation of the device at these or at any other conditions above those given in the Characteristics sections of the specification is not implied. Exposure to limiting values for extended periods may affect device reliability. Application information Where application information is given, it is advisory and does not form part of the specification. LIFE SUPPORT APPLICATIONS These products are not designed for use in life support appliances, devices, or systems where malfunction of these products can reasonably be expected to result in personal injury. Philips customers using or selling these products for use in such applications do so at their own risk and agree to fully indemnify Philips for any damages resulting from such improper use or sale. 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