DISCRETE SEMICONDUCTORS DATA SHEET BFG67W BFG67W/X; BFG67W/XR NPN 8 GHz wideband transistor Product specification File under Discrete Semiconductors, SC14 Philips Semiconductors August 1995 Philips Semiconductors Product specification BFG67W BFG67W/X; BFG67W/XR NPN 8 GHz wideband transistor MARKING FEATURES • High power gain TYPE NUMBER • Low noise figure BFG67W V2 • Gold metallization ensures excellent reliability. BFG67W/X V6 BFG67W/XR V7 APPLICATIONS CODE fpage PINNING They are intended for wideband applications in the GHz range such as analog satellite television systems and portable RF communication equipment. DESCRIPTION NPN silicon planar epitaxial transistors in plastic, 4-pin dual-emitter SOT343 and SOT343R packages. PIN DESCRIPTION 4 3 1 2 Top view MBK523 BFG67W (see Fig.1) 1 collector 2 base 3 emitter 4 emitter Fig.1 SOT343. BFG67W/X (see Fig.1) 1 collector 2 emitter 3 base 4 emitter alfpage 3 4 2 BFG67W/XR (see Fig.2) 1 collector 2 emitter 3 base 4 emitter 1 Top view MSB842 Fig.2 SOT343R. QUICK REFERENCE DATA SYMBOL PARAMETER CONDITIONS MIN. TYP. MAX. UNIT VCBO collector-base voltage open emitter − − 20 V VCEO collector-emitter voltage open base − − 10 V IC collector current (DC) − − 50 mA Ptot total power dissipation up to Ts = 85 °C − − 500 mW hFE DC current gain IC = 15 mA; VCE = 5 V 60 100 − Cre feedback capacitance IC = 0; VCE = 8 V; f = 1 MHz − 0.5 − pF fT transition frequency IC = 15 mA; VCE = 8 V; f = 500 MHz; Tamb = 25 °C − 7.5 − GHz GUM maximum unilateral power gain IC = 15 mA; VCE = 8 V; f = 1 GHz; Tamb = 25 °C − 15.5 − dB F noise figure Γs = Γopt; IC = 5 mA; VCE = 8 V; f = 2 GHz − 2.2 − dB August 1995 2 Philips Semiconductors Product specification BFG67W BFG67W/X; BFG67W/XR NPN 8 GHz wideband transistor LIMITING VALUES In accordance with the Absolute Maximum Rating System (IEC 134). SYMBOL PARAMETER CONDITIONS MIN. MAX. UNIT VCBO collector-base voltage open emitter − 20 V VCEO collector-emitter voltage open base − 10 V VEBO emitter-base voltage open collector − 2.5 V IC collector current (DC) − 50 mA Ptot total power dissipation − 500 mW Tstg storage temperature −65 +150 °C Tj junction temperature − 175 °C up to Ts = 85 °C; see Fig.3; note 1 THERMAL CHARACTERISTICS SYMBOL Rth j-s PARAMETER CONDITIONS thermal resistance from junction to soldering point up to Ts = 85 °C; note 1 Note to the “Limiting values” and “Thermal characteristics” 1. Ts is the temperature at the soldering point of the collector pin. MBG248 600 handbook, halfpage P tot (mW) 400 200 0 0 50 100 150 200 T s (o C) Fig.3 Power derating curve. August 1995 3 VALUE UNIT 180 K/W Philips Semiconductors Product specification BFG67W BFG67W/X; BFG67W/XR NPN 8 GHz wideband transistor CHARACTERISTICS Tj = 25 °C (unless otherwise specified). SYMBOL PARAMETER CONDITIONS MIN. TYP. MAX. UNIT V(BR)CBO collector-base breakdown voltage open emitter; IC = 10 µA; IE = 0 − − 20 V V(BR)CEO collector-emitter breakdown voltage open base; IC = 10 mA; IB = 0 − − 10 V V(BR)EBO emitter-base breakdown voltage open collector; IE = 10 µA; IC = 0 − − 2.5 V ICBO collector cut-off current open emitter; VCB = 5 V; IE = 0 − − 50 nA hFE DC current gain IC = 15 mA; VCE = 5 V 60 100 − fT transition frequency IC = 15 mA; VCE = 8 V; f = 500 MHz; − Tamb = 25 °C 7.5 − GHz Cc collector capacitance IE = ie = 0; VCE = 8 V; f = 1 MHz − 0.7 − pF Ce emitter capacitance IC = ic = 0; VEB = 0.5 V; f = 1 MHz − 1.3 − pF Cre feedback capacitance IC = 0; VCE = 8 V; f = 1 MHz − 0.5 − pF GUM maximum unilateral power gain; note 1 IC = 15 mA; VCE = 8 V; f = 1 GHz; Tamb = 25 °C − 15.5 − dB IC = 15 mA; VCE = 8 V; f = 2 GHz; Tamb = 25 °C − 10 − dB Γs = Γopt; IC = 5 mA; VCE = 8 V; f = 1 GHz − 1.3 − dB Γs = Γopt; IC = 15 mA; VCE = 8 V; f = 1 GHz − 1.7 − dB Γs = Γopt; IC = 5 mA; VCE = 8 V; f = 2 GHz − 2.2 − dB F noise figure Note s 21 2 dB. 1. GUM is the maximum unilateral power gain, assuming s12 is zero. G UM = 10 log -----------------------------------------------------------2 ( 1 – s 11 ) ( 1 – s 22 2 ) August 1995 4 Philips Semiconductors Product specification BFG67W BFG67W/X; BFG67W/XR NPN 8 GHz wideband transistor MBB301 MLB984 1 120 handbook, halfpage handbook, halfpage C re (pF) h FE 0.8 80 0.6 0.4 40 0.2 0 0 0 20 40 I C (mA) 0 60 VCE = 5 V. Fig.4 4 8 12 16 V CB (V) IC = 0; f = 1 MHz. DC current gain as a function of collector current; typical values. Fig.5 MLB985 10 handbook, halfpage fT (GHz) 8 6 4 2 0 0 10 20 30 40 I C (mA) f = 2 GHz; VCE = 8 V; Tamb = 25 °C. Fig.6 August 1995 Transition frequency as a function of collector current; typical values. 5 Feedback capacitance as a function of collector-base voltage; typical values. Philips Semiconductors Product specification BFG67W BFG67W/X; BFG67W/XR NPN 8 GHz wideband transistor MLB986 30 MLB987 50 handbook, halfpage handbook, halfpage gain gain (dB) (dB) 40 G UM 20 MSG 30 G max MSG G UM 20 10 G max 10 0 0 10 20 0 30 f = 1 GHz; VCE = 8 V. Fig.7 102 10 I C (mA) 103 f (MHz) 104 IC = 5 mA; VCE = 8 V. Gain as a function of collector current; typical values. Fig.8 MLB988 50 Gain as a function of frequency; typical values. MLB989 50 handbook, halfpage handbook, halfpage gain gain (dB) (dB) 40 G UM 40 MSG MSG 30 30 20 20 G max 10 102 103 f (MHz) 0 104 10 IC = 15 mA; VCE = 8 V. Fig.9 August 1995 G max 10 0 10 G UM 102 103 f (MHz) 104 IC = 30 mA; VCE = 8 V. Gain as a function of frequency; typical values. Fig.10 Gain as a function of frequency; typical values. 6 Philips Semiconductors Product specification BFG67W BFG67W/X; BFG67W/XR NPN 8 GHz wideband transistor MBB308 4 handbook, halfpage f = 2 GHz F (dB) MBB309 4 handbook, halfpage F (dB) I C = 30 mA 3 3 1 GHz 15 mA 900 MHz 5 mA 500 MHz 2 2 1 1 0 10 2 0 1 10 I C (mA) 100 VCE = 8 V. f (MHz) 10 4 VCE = 8 V. Fig.11 Minimum noise figure as a function of collector current; typical values. August 1995 10 3 Fig.12 Minimum noise figure as a function of frequency; typical values. 7 Philips Semiconductors Product specification BFG67W BFG67W/X; BFG67W/XR NPN 8 GHz wideband transistor stability circle 90 o handbook, full pagewidth 1.0 1 135 o 45 o 2 0.5 0.8 0.6 0.2 0.4 5 Γ opt unstable region 180 o F min = 0.95 dB 0.2 0 0.5 1 0.2 2 5 0o F = 1.5 dB 0.2 0 5 F = 2 dB F = 3 dB 0.5 2 135 o 45 o 1 MLB990 1.0 90 o f = 500 MHz; VCE = 8 V; IC = 5 mA; Zo = 50 Ω. Fig.13 Common emitter noise figure circles; typical values. stability circle 90 o 1.0 handbook, full pagewidth 1 135 o 45 o 2 0.5 0.8 0.6 F min = 1.30 dB 0.2 180 o 0.2 0 0.5 unstable region 1 0.4 5 Γ opt 0.2 2 5 0o 0 F = 2 dB 5 0.2 F = 3 dB F = 4 dB 0.5 2 135 o 45 o 1 MLB991 f = 1 GHz; VCE = 8 V; IC = 5 mA; Zo = 50 Ω. 90 o Fig.14 Common emitter noise figure circles; typical values. August 1995 8 1.0 Philips Semiconductors Product specification BFG67W BFG67W/X; BFG67W/XR NPN 8 GHz wideband transistor 90 o 1.0 handbook, full pagewidth 1 135 o 0.5 F = 4 dB 45 o 2 F = 5 dB 0.6 F = 3 dB F min = 2.20 dB 0.2 0.8 0.4 5 Γ opt 180 o 0.2 0 0.5 0.2 1 2 5 0o G max = 10.4 dB 0 G = 10 dB 0.2 5 G = 9 dB 0.5 2 135 o 45 o 1 MLB992 90 o f = 2 GHz; VCE = 8 V; IC = 5 mA; Zo = 50 Ω. Fig.15 Common emitter noise figure circles; typical values. August 1995 9 1.0 Philips Semiconductors Product specification BFG67W BFG67W/X; BFG67W/XR NPN 8 GHz wideband transistor 90 o 1.0 handbook, full pagewidth 1 135 o 45 o 2 0.5 0.8 0.6 0.2 0.4 5 3 GHz 0.2 180 o 0.2 0 0.5 1 2 5 0o 0 40 MHz 5 0.2 0.5 2 135 o 45 o 1 MLB993 1.0 90 o VCE = 8 V; IC = 15 mA; Zo = 50 Ω. Fig.16 Common emitter input reflection coefficient (s11); typical values. 90 o handbook, full pagewidth 135 o 45 o 40 MHz 180 o 3 GHz 50 40 30 20 0o 10 135 o 45 o 90 o MLB994 VCE = 8 V; IC = 15 mA. Fig.17 Common emitter forward transmission coefficient (s21); typical values. August 1995 10 Philips Semiconductors Product specification BFG67W BFG67W/X; BFG67W/XR NPN 8 GHz wideband transistor 90 o handbook, full pagewidth 3 GHz 135 o 45 o 40 MHz 180 o 0.25 0.20 0.15 0.10 0o 0.05 135 o 45 o 90 o MLB995 VCE = 8 V; IC = 15 mA. Fig.18 Common emitter reverse transmission coefficient (s12); typical values. 90 o 1.0 handbook, full pagewidth 1 135 o 45 o 2 0.5 0.8 0.6 0.2 0.4 5 0.2 180 o 0.2 0 0.5 1 2 5 0o 0 40 MHz 0.2 5 3 GHz 0.5 2 135 o 45 o 1 MLB996 1.0 90 o VCE = 8 V; IC = 15 mA; Zo = 50 Ω. Fig.19 Common emitter output reflection coefficient (s22); typical values. August 1995 11 Philips Semiconductors Product specification BFG67W BFG67W/X; BFG67W/XR NPN 8 GHz wideband transistor SPICE parameters for the BFG67W crystal SEQUENCE No. PARAMETER VALUE UNIT SEQUENCE No. PARAMETER VALUE UNIT 1 IS 556.4 aA 36(1) VJS 750.0 mV 2 BF 170.0 − 37(1) MJS 0.000 − 3 NF 0.995 − 38 FC 0.870 − 4 VAF 48.03 V Note 5 IKF 918.1 mA 6 ISE 10.47 fA 1. These parameters have not been extracted, the default values are shown. 7 NE 1.479 − 8 BR 142.1 − 9 NR 0.994 − 10 VAR 2.555 V 11 IKR 9.632 A 12 ISC 438.2 aA 13 NC 1.089 − 14 RB 10.00 Ω 15 IRB 1.000 µA 16 RBM 10.00 Ω 17 RE 655.9 mΩ 18 RC 2.000 Ω 19(1) XTB 0.000 − 20(1) EG 1.110 eV 21(1) XTI 3.000 − 22 CJE 1.137 pF 23 VJE 600.0 mV 24 MJE 0.249 − 25 TF 11.97 ps 26 XTF 25.99 − 27 VTF 1.223 V 28 ITF 197.3 mA Cbe 70 fF 29 PTF 10.03 deg Ccb 50 fF 30 CJC 515.9 fF Cce 115 fF 31 VJC 155.8 mV L1 0.34 nH 32 MJC 56.02 − L2 0.10 nH 33 XCJC 130.0 − L3 0.25 nH 34 TR 1.877 ns LB 0.40 nH 35(1) CJS 0.000 F LE 0.40 nH August 1995 C cb handbook, halfpage L1 LB B L2 B' C be C' E' C Cce LE MBC964 L3 E QLB = 50; QLE = 50; QLB,E(f) = QLB,E√(f/fc); fc = scaling frequency = 1 GHz. Fig.20 Package equivalent circuit SOT343; SOT343R. List of components (see Fig.20) DESIGNATION 12 VALUE UNIT Philips Semiconductors Product specification BFG67W BFG67W/X; BFG67W/XR NPN 8 GHz wideband transistor PACKAGE OUTLINES handbook, full pagewidth 0.2 M A 0.4 0.2 0.2 M B 4 0.1 max 3 1.00 max 0.2 A 1.35 1.15 2.2 2.0 1 0.7 0.5 0.3 0.1 2 0.25 0.10 1.4 1.2 2.2 1.8 B MSB374 Dimensions in mm. Fig.21 SOT343. 1.00 max handbook, full pagewidth 0.2 M A 0.1 max 0.4 0.2 0.2 M B 0.2 3 4 A 1.35 1.15 2.2 2.0 2 0.3 0.1 1 0.25 0.10 0.7 0.5 1.4 1.2 2.2 1.8 B Dimensions in mm. Fig.22 SOT343R. August 1995 13 MSB367 Philips Semiconductors Product specification BFG67W BFG67W/X; BFG67W/XR NPN 8 GHz wideband transistor DEFINITIONS Data Sheet Status Objective specification This data sheet contains target or goal specifications for product development. Preliminary specification This data sheet contains preliminary data; supplementary data may be published later. Product specification This data sheet contains final product specifications. Limiting values Limiting values given are in accordance with the Absolute Maximum Rating System (IEC 134). Stress above one or more of the limiting values may cause permanent damage to the device. These are stress ratings only and operation of the device at these or at any other conditions above those given in the Characteristics sections of the specification is not implied. Exposure to limiting values for extended periods may affect device reliability. Application information Where application information is given, it is advisory and does not form part of the specification. LIFE SUPPORT APPLICATIONS These products are not designed for use in life support appliances, devices, or systems where malfunction of these products can reasonably be expected to result in personal injury. Philips customers using or selling these products for use in such applications do so at their own risk and agree to fully indemnify Philips for any damages resulting from such improper use or sale. August 1995 14 Philips Semiconductors Product specification BFG67W BFG67W/X; BFG67W/XR NPN 8 GHz wideband transistor NOTES August 1995 15 Philips Semiconductors – a worldwide company Argentina: IEROD, Av. Juramento 1992 - 14.b, (1428) BUENOS AIRES, Tel. (541)786 7633, Fax. (541)786 9367 Australia: 34 Waterloo Road, NORTH RYDE, NSW 2113, Tel. (02)805 4455, Fax. (02)805 4466 Austria: Triester Str. 64, A-1101 WIEN, P.O. Box 213, Tel. (01)60 101-1236, Fax. (01)60 101-1211 Belgium: Postbus 90050, 5600 PB EINDHOVEN, The Netherlands, Tel. (31)40 783 749, Fax. (31)40 788 399 Brazil: Rua do Rocio 220 - 5th floor, Suite 51, CEP: 04552-903-SÃO PAULO-SP, Brazil. P.O. Box 7383 (01064-970). Tel. (011)821-2333, Fax. (011)829-1849 Canada: PHILIPS SEMICONDUCTORS/COMPONENTS: Tel. (800) 234-7381, Fax. (708) 296-8556 Chile: Av. Santa Maria 0760, SANTIAGO, Tel. (02)773 816, Fax. (02)777 6730 Colombia: IPRELENSO LTDA, Carrera 21 No. 56-17, 77621 BOGOTA, Tel. (571)249 7624/(571)217 4609, Fax. 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The information presented in this document does not form part of any quotation or contract, is believed to be accurate and reliable and may be changed without notice. No liability will be accepted by the publisher for any consequence of its use. Publication thereof does not convey nor imply any license under patent- or other industrial or intellectual property rights. Printed in The Netherlands 123065/1500/01/pp16 Document order number: Date of release: August 1995 9397 739 20011