DISCRETE SEMICONDUCTORS DATA SHEET dbook, halfpage M3D154 BAS216 High-speed switching diode Product data sheet Supersedes data of 1999 Apr 22 2002 May 28 NXP Semiconductors Product data sheet High-speed switching diode BAS216 FEATURES DESCRIPTION • Small ceramic SMD package The BAS216 is a high-speed switching diode fabricated in planar technology, and encapsulated in the SOD110 very small rectangular ceramic SMD package. • High switching speed: max. 4 ns • Continuous reverse voltage: max. 75 V • Repetitive peak reverse voltage: max. 85 V cathode mark handbook, 4 columns • Repetitive peak forward current: max. 500 mA. a k k a APPLICATIONS • High-speed switching in e.g. surface mounted circuits. bottom view side view top view MAM139 Marking code: A6. Fig.1 Simplified outline (SOD110) and symbol. LIMITING VALUES In accordance with the Absolute Maximum Rating System (IEC 60134). SYMBOL PARAMETER CONDITIONS MIN. MAX. UNIT VRRM repetitive peak reverse voltage − 85 V VR continuous reverse voltage − 75 V IF continuous forward current − 250 mA IFRM repetitive peak forward current − 500 mA IFSM non-repetitive peak forward current t = 1 µs − 4 A t = 1 ms − 1 A t=1s − 0.5 A − 400 mW note 1 square wave; Tj = 25 °C prior to surge; see Fig.4 Tamb = 25 °C; see Fig.2; note 1 Ptot total power dissipation Tstg storage temperature −65 +150 °C Tj junction temperature − 150 °C Note 1. Device mounted on an FR4 printed-circuit board. 2002 May 28 2 NXP Semiconductors Product data sheet High-speed switching diode BAS216 ELECTRICAL CHARACTERISTICS Tj = 25 °C unless otherwise specified. SYMBOL VF IR PARAMETER forward voltage reverse current CONDITIONS MIN. MAX. UNIT see Fig.3 IF = 1 mA − 715 mV IF = 10 mA − 855 mV IF = 50 mA − 1 V IF = 150 mA − 1.25 V VR = 25 V − 30 nA VR = 75 V − 1 µA VR = 25 V; Tj = 150 °C − 30 µA see Fig.5 VR = 75 V; Tj = 150 °C − 50 µA Cd diode capacitance f = 1 MHz; VR = 0; see Fig.6 − 1.5 pF trr reverse recovery time when switched from IF = 10 mA to IR = 10 mA; RL = 100 Ω; measured at IR = 1 mA; see Fig.7 − 4 ns Vfr forward recovery voltage when switched from IF = 10 mA; tr = 20 ns; see Fig.8 − 1.75 V THERMAL CHARACTERISTICS SYMBOL PARAMETER Rth j-tp thermal resistance from junction to tie-point Rth j-a thermal resistance from junction to ambient CONDITIONS note 1 Note 1. Device mounted on an FR4 printed-circuit board. 2002 May 28 3 VALUE UNIT 200 K/W 315 K/W NXP Semiconductors Product data sheet High-speed switching diode BAS216 GRAPHICAL DATA MSA570 MBG382 300 500 handbook, halfpage IF (mA) P tot (mW) (1) (2) (3) 200 250 100 0 0 0 100 Tamb ( o C) 200 1 2 VF (V) (1) Tj = 150 °C; typical values. (2) Tj = 25 °C; typical values. (3) Tj = 25 °C; maximum values. Device mounted on an FR4 printed-circuit board. Fig.2 0 Maximum permissible total power dissipation as a function of ambient temperature. Fig.3 Forward current as a function of forward voltage. MBG704 102 handbook, full pagewidth IFSM (A) 10 1 10−1 1 10 102 103 tp (µs) Based on square wave currents. Tj = 25 °C prior to surge. Fig.4 Maximum permissible non-repetitive peak forward current as a function of pulse duration. 2002 May 28 4 104 NXP Semiconductors Product data sheet High-speed switching diode MSA563 10 5 MBH285 0.6 handbook, halfpage Cd (pF) IR (nA) 10 BAS216 V R = 75 V 4 0.5 75 V 10 3 0.4 25 V 10 2 0.2 0 10 0 100 T j ( o C) 0 200 4 Dotted line: maximum values. Solid lines: typical values. f = 1 MHz; Tj = 25 °C. Fig.5 Fig.6 Reverse current as a function of junction temperature. 2002 May 28 5 8 12 V (V) 16 R Diode capacitance as a function of reverse voltage; typical values. NXP Semiconductors Product data sheet High-speed switching diode BAS216 handbook, full pagewidth tr tp t D.U.T. 10% IF RS = 50 Ω IF SAMPLING OSCILLOSCOPE t rr t R i = 50 Ω V = VR I F x R S (1) 90% VR MGA881 input signal output signal (1) IR = 1 mA. Fig.7 Reverse recovery voltage test circuit and waveforms. I 1 kΩ 450 Ω V I 90% R S = 50 Ω D.U.T. OSCILLOSCOPE V fr R i = 50 Ω 10% MGA882 t tr input signal Fig.8 Forward recovery voltage test circuit and waveforms. 2002 May 28 6 t tp output signal NXP Semiconductors Product data sheet High-speed switching diode BAS216 PACKAGE OUTLINE Very small ceramic rectangular surface mounted package D SOD110 E A y cathode identifier DIMENSIONS (mm are the original dimensions) 1 2 0 0.5 1 mm UNIT A max. D E y mm 1.6 2.10 1.90 1.40 1.10 0.1 scale OUTLINE VERSION REFERENCES IEC JEDEC EIAJ ISSUE DATE 97-04-14 SOD110 2002 May 28 EUROPEAN PROJECTION 7 NXP Semiconductors Product data sheet High-speed switching diode BAS216 DATA SHEET STATUS DOCUMENT STATUS(1) PRODUCT STATUS(2) DEFINITION Objective data sheet Development This document contains data from the objective specification for product development. Preliminary data sheet Qualification This document contains data from the preliminary specification. Product data sheet Production This document contains the product specification. Notes 1. Please consult the most recently issued document before initiating or completing a design. 2. The product status of device(s) described in this document may have changed since this document was published and may differ in case of multiple devices. The latest product status information is available on the Internet at URL http://www.nxp.com. above those given in the Characteristics sections of this document is not implied. Exposure to limiting values for extended periods may affect device reliability. DISCLAIMERS General ⎯ Information in this document is believed to be accurate and reliable. However, NXP Semiconductors does not give any representations or warranties, expressed or implied, as to the accuracy or completeness of such information and shall have no liability for the consequences of use of such information. Terms and conditions of sale ⎯ NXP Semiconductors products are sold subject to the general terms and conditions of commercial sale, as published at http://www.nxp.com/profile/terms, including those pertaining to warranty, intellectual property rights infringement and limitation of liability, unless explicitly otherwise agreed to in writing by NXP Semiconductors. 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Applications ⎯ Applications that are described herein for any of these products are for illustrative purposes only. NXP Semiconductors makes no representation or warranty that such applications will be suitable for the specified use without further testing or modification. Limiting values ⎯ Stress above one or more limiting values (as defined in the Absolute Maximum Ratings System of IEC 60134) may cause permanent damage to the device. Limiting values are stress ratings only and operation of the device at these or any other conditions 2002 May 28 8 NXP Semiconductors Customer notification This data sheet was changed to reflect the new company name NXP Semiconductors. No changes were made to the content, except for the legal definitions and disclaimers. Contact information For additional information please visit: http://www.nxp.com For sales offices addresses send e-mail to: [email protected] © NXP B.V. 2009 All rights are reserved. Reproduction in whole or in part is prohibited without the prior written consent of the copyright owner. The information presented in this document does not form part of any quotation or contract, is believed to be accurate and reliable and may be changed without notice. No liability will be accepted by the publisher for any consequence of its use. Publication thereof does not convey nor imply any license under patent- or other industrial or intellectual property rights. Printed in The Netherlands 613514/05/pp9 Date of release: 2002 May 28 Document order number: 9397 750 09729