FINAL PRODUCT/PROCESS CHANGE NOTIFICATION # 16540 Generic Copy Issue Date: 12-Nov-2010 TITLE: VHVIC 2nd Source Qualification to Gresham FAB PROPOSED FIRST SHIP DATE: 12-Feb-2011 AFFECTED CHANGE CATEGORY(S): Wafer Fab location FOR ANY QUESTIONS CONCERNING THIS NOTIFICATION: Contact your local ON Semiconductor Sales Office or <[email protected]> SAMPLES: Contact your local ON Semiconductor Sales Office ADDITIONAL RELIABILITY DATA: Available Contact your local ON Semiconductor Sales Office or <[email protected]> NOTIFICATION TYPE: Final Product/Process Change Notification (FPCN) Final change notification sent to customers. implementation of the change. FPCNs are issued at least 90 days prior to ON Semiconductor will consider this change approved unless specific conditions of acceptance are provided in writing within 30 days of receipt of this notice. To do so, contact <[email protected]>. DESCRIPTION AND PURPOSE: The purpose of this final PCN is to notify customers of the qualification of a second source for our VHVIC wafer technology at ON Semiconductor’s wafer fabrication facilities in Gresham, Oregon. This qualification is being made to increase the capacity for this technology. This technology is currently produced out of ON Semiconductor’s wafer fabrication facilities in Aizu, Japan. The VHVIC process is being duplicated at the Gresham wafer FAB. No die design changes have occurred. No changes to the device performance, data sheets or packaging have been made. Issue Date: 12-Nov-2010 Rev. 06-Jan-2010 Page 1 of 3 FINAL PRODUCT/PROCESS CHANGE NOTIFICATION #16540 RELIABILITY DATA SUMMARY: Reliability Test Results: NCP1271D65R2G: # 1 2 3 4 5 6 7 8 9 Test HTBB HVTHB HTOL HTSL TC-PC AC-PC UHAST-PC HAST-PC SAT-PC Test Conditions TA=125C, 450V Bias TA=85C, 60%RH, 450V Bias TA=125C, 100V Bias TA=150C -65C to +150C TA=121C, RH=100%, PSI=15 TA=130C, RH=85%, PSI=18.8 no Bias TA=130C, RH=85%, PSI=18.8 Bias Post MSL3 260C Read Points Test @ 1008hrs Test @ 168hrs Test @ 1008hrs Test @ 1008hrs Test @ 500 Cycles Test @ 96hrs Test @ 1008hrs Test @ 1008hrs Pre and Post PC Sample Size 3 lots x 80 units 3 lots x 80 units 3 lots x 80 units 3 lots x 80 units 3 lots x 80 units 3 lots x 80 units 3 lots x 80 units 3 lots x 80 units 3 lot x 5 units Results 0/240 0/240 0/240 0/240 0/240 0/240 0/240 0/240 0/15 Read Points Test @ 1008hrs Test @ 1008hrs Test @ 1008hrs Test @ 500 Cycles Test @ 96hrs Test @ 1008hrs Test @ 1008hrs Pre and Post PC Sample Size 3 lots x 80 units 3 lots x 80 units 3 lots x 80 units 3 lots x 80 units 3 lots x 80 units 3 lots x 80 units 3 lots x 80 units 3 lot x 5 units Results 0/239* 0/240 0/240 0/240 0/240 0/240 0/240 0/15 NCP1396ADR2G: # Test Test Conditions 1 HTBB TA=125C, 450V Bias 2 HTOL TA=125C, 100V Bias 3 HTSL TA=150C 4 TC-PC -65C to +150C 5 AC-PC TA=121C, RH=100%, PSI=15 6 UHAST-PC TA=130C, RH=85%, PSI=18.8 no Bias 7 HAST-PC TA=130C, RH=85%, PSI=18.8 Bias 8 SAT-PC Post MSL3 260C * 1 EOS failure after 504hrs ELECTRICAL CHARACTERISTIC SUMMARY: There is no change in the electrical performance. Datasheet specifications remain unchanged. CHANGED PART IDENTIFICATION: Affected products with date code WW07-2011 and greater may be sourced from either Gresham or Aizu wafer Fabrication site. Issue Date: 12-Nov-2010 Rev. 06-Jan-2010 Page 2 of 3 FINAL PRODUCT/PROCESS CHANGE NOTIFICATION #16540 List of affected General Parts: PART NCP1271D65R2G NCP1271D100R2G NCP1396ADR2G NCP1396BDR2G Issue Date: 12-Nov-2010 Rev. 06-Jan-2010 Page 3 of 3