IRF IRF7MS2907

PD - 94609
HEXFET® POWER MOSFET
THRU-HOLE (Low-ohmic TO-254AA)
IRF7MS2907
75V, N-CHANNEL
Product Summary
Part Number
BVDSS
IRF7MS2907
75V
RDS(on)
ID
0.0055Ω 45A*
Seventh Generation HEXFET® power MOSFETs from
International Rectifier utilize advanced processing
techniques to achieve the lowest possible on-resistance
per silicon unit area. This benefit, combined with the
fast switching speed and ruggedized device design
that HEXFET power MOSFETs are well known for,
provides the designer with an extremely efficient device
for use in a wide variety of applications.
These devices are well-suited for applications such
as switching power supplies, motor controls, inverters, choppers, audio amplifiers and high-energy pulse
circuits.
Low-Ohmic
TO-254AA
Features:
n
n
n
n
n
n
n
Low RDS(on)
Avalanche Energy Ratings
Dynamic dv/dt Rating
Simple Drive Requirements
Ease of Paralleling
Hermetically Sealed
Light Weight
Absolute Maximum Ratings
Parameter
ID @ VGS = 10V, TC = 25°C
ID @ VGS = 10V, TC = 100°C
IDM
PD @ TC = 25°C
VGS
EAS
IAR
EAR
dv/dt
TJ
T STG
Continuous Drain Current
Continuous Drain Current
Pulsed Drain Current ➀
Max. Power Dissipation
Linear Derating Factor
Gate-to-Source Voltage
Single Pulse Avalanche Energy ➁
Avalanche Current ➀
Repetitive Avalanche Energy ➀
Peak Diode Recovery dv/dt ➂
Operating Junction
Storage Temperature Range
Lead Temperature
Weight
Units
45*
45*
180
208
1.67
±20
760
45
20.8
2.2
-55 to 150
A
W
W/°C
V
mJ
A
mJ
V/ns
o
C
300 (0.063in./1.6mm from case for 10s)
4.3 (Typical)
g
* Current is limited by package
For footnotes refer to the last page
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1
04/14/03
IRF7MS2907
Electrical Characteristics @ Tj = 25°C (Unless Otherwise Specified)
Min
Drain-to-Source Breakdown Voltage
∆BV DSS /∆T J Temperature Coefficient of Breakdown
Voltage
RDS(on)
Static Drain-to-Source On-State
Resistance
VGS(th)
Gate Threshold Voltage
g fs
Forward Transconductance
IDSS
Zero Gate Voltage Drain Current
IGSS
IGSS
Qg
Q gs
Q gd
td(on)
tr
td(off)
tf
LS + LD
Gate-to-Source Leakage Forward
Gate-to-Source Leakage Reverse
Total Gate Charge
Gate-to-Source Charge
Gate-to-Drain (‘Miller’) Charge
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
Fall Time
Total Inductance
Typ Max Units
75
—
—
V
—
0.087
—
V/°C
—
—
0.0055
Ω
2.0
70
—
—
—
—
—
—
4.0
—
20
250
V
S( )
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
6.8
100
-100
375
60
150
40
135
175
75
—
Test Conditions
VGS = 0V, ID = 250µA
Reference to 25°C, ID = 1.0mA
VGS = 10V, ID = 45A ➃
nC
VDS = VGS, ID = 250µA
VDS > 15V, IDS = 45A ➃
VDS= 75V ,VGS=0V
VDS = 60V,
VGS = 0V, TJ = 125°C
VGS = 20V
VGS = -20V
VGS = 10V, ID = 45A
VDS = 60V
ns
VDD = 38V, ID = 45A
VGS = 10V, RG = 1..2Ω
Ω
Parameter
BVDSS
µA
nA
nH Measured from Drain lead (6mm /0.25in.
from package) to Source lead (6mm /0.25in.
from package) with Source wires internally
bonded from Source Pin to Drain Pad
Ciss
Coss
Crss
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
—
—
—
12060
2280
605
—
—
—
VGS = 0V, VDS =25V
f = 1.0MHz
pF
Source-Drain Diode Ratings and Characteristics
Parameter
IS
ISM
VSD
trr
QRR
ton
Continuous Source Current (Body Diode)
Pulse Source Current (Body Diode) ➀
Diode Forward Voltage
Reverse Recovery Time
Reverse Recovery Charge
Min Typ Max Units
—
—
—
—
—
—
—
—
—
—
45*
180
1.0
175
850
Test Conditions
A
V
ns
nC
Tj = 25°C, IS = 45A, VGS = 0V ➃
Tj = 25°C, IF = 45A, di/dt ≤ 100A/µs
VDD ≤ 25V ➃
Forward Turn-On Time Intrinsic turn-on time is negligible. Turn-on speed is substantially controlled by LS + LD.
* Current is limited by package
Thermal Resistance
Parameter
RthJC
Junction-to-Case
Min Typ Max
—
—
0.6
Units
Test Conditions
°C/W
Note: Corresponding Spice and Saber models are available on the G&S Website.
For footnotes refer to the last page
2
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IRF7MS2907
1000
1000
VGS
15V
10V
8.0V
7.0V
6.0V
5.5V
5.0V
BOTTOM 4.5V
TOP
ID , Drain-to-Source Current (A)
ID , Drain-to-Source Current (A)
VGS
TOP
15V
10V
8.0V
7.0V
6.0V
5.5V
5.0V
BOTTOM 4.5V
100
100
4.5V
20µs PULSE WIDTH
Tj = 25°C
20µs PULSE WIDTH
Tj = 150°C
10
10
0.1
1
10
0.1
100
Fig 1. Typical Output Characteristics
R DS(on) , Drain-to-Source On Resistance
(Normalized)
2.5
T J = 150°C
T J = 25°C
10
VDS = 25V
20µs PULSE
WIDTH
15
1
3
3.5
4
4.5
5
5.5
6
VGS, Gate-to-Source Voltage (V)
Fig 3. Typical Transfer Characteristics
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10
100
Fig 2. Typical Output Characteristics
1000
100
1
VDS , Drain-to-Source Voltage (V)
VDS , Drain-to-Source Voltage (V)
ID , Drain-to-Source Current ( Α)
4.5V
ID = 45A
2.0
1.5
1.0
0.5
0.0
-60 -40 -20
VGS = 10V
0
20
40
60
80 100 120 140 160
TJ , Junction Temperature ( °C)
Fig 4. Normalized On-Resistance
Vs. Temperature
3
IRF7MS2907
VGS = 0V,
f = 1MHz
Ciss = Cgs + Cgd , Cds SHORTED
Crss = Cgd
Coss = Cds + Cgd
C, Capacitance (pF)
16000
Ciss
12000
8000
C
oss
4000
C
rss
20
VGS , Gate-to-Source Voltage (V)
20000
0
1
10
ID = 45A
16
12
8
4
FOR TEST CIRCUIT
SEE FIGURE 13
0
100
0
100
VDS , Drain-to-Source Voltage (V)
300
400
500
Fig 6. Typical Gate Charge Vs.
Gate-to-Source Voltage
1000
1000
OPERATION IN THIS AREA
LIMITED BY RDS(on)
ID, Drain-to-Source Current (A)
ISD , Reverse Drain Current ( Α)
200
QG , Total Gate Charge (nC)
Fig 5. Typical Capacitance Vs.
Drain-to-Source Voltage
T J = 150°C
100
100
T J = 25°C
10
1
VGS = 0V
0.1
0.2
0.4
0.6
0.8
1.0
1.2
VSD , Source-to-Drain Voltage (V)
Fig 7. Typical Source-Drain Diode
Forward Voltage
4
VDS = 60V
VDS = 37V
VDS = 15V
100µs
1ms
10
1
1.4
Tc = 25°C
Tj = 150°C
Single Pulse
0.1
1
10ms
10
100
1000
VDS , Drain-toSource Voltage (V)
Fig 8. Maximum Safe Operating Area
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IRF7MS2907
160
LIMITED BY PACKAGE
I D , Drain Current (A)
RD
V DS
VGS
D.U.T.
RG
120
+
-V DD
VGS
Pulse Width ≤ 1 µs
Duty Factor ≤ 0.1 %
80
Fig 10a. Switching Time Test Circuit
40
VDS
90%
0
25
50
75
100
TC , Case Temperature
125
150
( °C)
Fig 9. Maximum Drain Current Vs.
Case Temperature
10%
VGS
td(on)
tr
t d(off)
tf
Fig 10b. Switching Time Waveforms
Thermal Response (Z thJC )
1
D = 0.50
0.20
0.1
0.10
0.05
0.02
0.01
SINGLE PULSE
(THERMAL RESPONSE)
PDM
0.01
t1
t2
Notes:
1. Duty factor D = t1 / t 2
2. Peak T J = P DM x Z thJC + TC
0.001
0.00001
0.0001
0.001
0.01
0.1
1
t1 , Rectangular Pulse Duration (sec)
Fig 11. Maximum Effective Transient Thermal Impedance, Junction-to-Case
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IRF7MS2907
1 5V
EAS , Single Pulse Avalanche Energy (mJ)
2000
ID
20A
28.5A
BOTTOM
45A
TOP
1600
D R IV E R
L
VDS
1200
D .U .T.
RG
+
V
- DD
IA S
2V
0V
GS
tp
A
0 .0 1 Ω
Fig 12a. Unclamped Inductive Test Circuit
V (B R )D SS
800
400
0
25
50
75
100
125
150
Starting TJ , Junction Temperature ( °C)
tp
Fig 12c. Maximum Avalanche Energy
Vs. Drain Current
IAS
Current Regulator
Same Type as D.U.T.
Fig 12b. Unclamped Inductive Waveforms
50KΩ
12V
.2µF
.3µF
QG
10V
D.U.T.
QGS
+
V
- DS
QGD
VGS
VG
3mA
IG
Charge
Fig 13a. Basic Gate Charge Waveform
6
ID
Current Sampling Resistors
Fig 13b. Gate Charge Test Circuit
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IRF7MS2907
Footnotes:
 Repetitive Rating; Pulse width limited by
ƒ ISD ≤ 45A, di/dt ≤ 380A/µs,
maximum junction temperature.
‚ VDD = 25 V, Starting TJ = 25°C, L= 0.75mH
Peak I AS = 45A, VGS =10V, RG= 25Ω
„ Pulse width ≤ 300 µs; Duty Cycle ≤ 2%
VDD ≤ 75V, TJ ≤ 150°C
Case Outline and Dimensions — Low-ohmic TO-254AA
0.12 [.005]
6.60 [.260]
6.32 [.249]
13.84 [.545]
13.59 [.535]
3.78 [.149]
3.53 [.139]
A
20.32 [.800]
20.07 [.790]
17.40 [.685]
16.89 [.665]
1
2
C
2X
B
A
22.73 [.895]
21.21 [.835]
3
17.40 [.685]
16.89 [.665]
0.84 [.033]
MAX.
0.36 [.014]
4.82 [.190]
3.81 [.150]
2
3.81 [.150]
2X
13.84 [.545]
13.59 [.535]
1.27 [.050]
1.02 [.040]
B
R 1.52 [.060]
3
4.06 [.160]
3.56 [.140]
1.14 [.045]
0.89 [.035]
3X
3.81 [.150]
1.14 [.045]
0.89 [.035]
0.36 [.014]
B A
B A
NOTES :
1.
2.
3.
4.
20.32 [.800]
20.07 [.790]
17.40 [.685]
16.89 [.665]
1
3X
3.81 [.150]
13.84 [.545]
13.59 [.535]
1.27 [.050]
1.02 [.040]
0.12 [.005]
6.60 [.260]
6.32 [.249]
13.84 [.545]
13.59 [.535]
3.78 [.149]
3.53 [.139]
PIN AS S IGNMENTS
DIMENS IONING & TOLERANCING PER AS ME Y14.5M-1994.
ALL DIME NS IONS ARE S HOWN IN MILLIMETERS [INCHES ].
CONTROLLING DIMENS ION: INCH.
CONFORMS T O JEDEC OUTLINE T O-254AA.
1 = DRAIN
2 = S OURCE
3 = GATE
CAUTION
BERYLLIA WARNING PER MIL-PRF-19500
Packages containing beryllia shall not be ground, sandblasted, machined, or have other operations performed on them
which will produce beryllia or beryllium dust. Furthermore, beryllium oxide packages shall not be placed in acids
that will produce fumes containing beryllium.
IR WORLD HEADQUARTERS: 233 Kansas St., El Segundo, California 90245, USA Tel: (310) 252-7105
TAC Fax: (310) 252-7903
Visit us at www.irf.com for sales contact information.
Data and specifications subject to change without notice. 04/03
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