PD - 91415E IRHM9160 JANSR2N7425 100V, P-CHANNEL REF: MIL-PRF-19500/660 RADIATION HARDENED POWER MOSFET THRU-HOLE (TO-254AA) ® ™ RAD-Hard HEXFET TECHNOLOGY Product Summary Part Number Radiation Level RDS(on) IRHM9160 100K Rads (Si) 0.073Ω ID QPL Part Number -35A* JANSR2N7425 IRHM93160 -35A* 300K Rads (Si) 0.073Ω JANSF2N7425 International Rectifier’s RAD-Hard HEXFETTM technology provides high performance power MOSFETs for space applications. This technology has over a decade of proven performance and reliability in satellite applications. These devices have been characterized for both Total Dose and Single Event Effects (SEE). The combination of low Rdson and low gate charge reduces the power losses in switching applications such as DC to DC converters and motor control. These devices retain all of the well established advantages of MOSFETs such as voltage control, fast switching, ease of paralleling and temperature stability of electrical parameters. TO-254AA Features: n n n n n n n n n Single Event Effect (SEE) Hardened Low RDS(on) Low Total Gate Charge Proton Tolerant Simple Drive Requirements Ease of Paralleling Hermetically Sealed Ceramic Package Light Weight Absolute Maximum Ratings Pre-Irradiation Parameter ID @ VGS = -12V, TC = 25°C ID @ VGS = -12V, TC = 100°C IDM PD @ TC = 25°C VGS EAS IAR EAR dv/dt TJ T STG Continuous Drain Current Continuous Drain Current Pulsed Drain Current ➀ Max. Power Dissipation Linear Derating Factor Gate-to-Source Voltage Single Pulse Avalanche Energy ➁ Avalanche Current ➀ Repetitive Avalanche Energy ➀ Peak Diode Recovery dv/dt ➂ Operating Junction Storage Temperature Range Lead Temperature Weight Units -35* -24 -152 250 2.0 ±20 500 -35 25 -16 -55 to 150 A W W/°C V mJ A mJ V/ns o 300 ( 0.063 in. (1.6mm) from case for 10s) 9.3 (typical) C g For footnotes refer to the last page *Current is limited by internal wire diameter www.irf.com 1 12/20/01 IRHM9160 Pre-Irradiation Electrical Characteristics @ Tj = 25°C (Unless Otherwise Specified) Min Typ Max Units — — V -0.11 — V/°C — — — — — — 0.073 0.075 -4.0 — -25 -250 IGSS IGSS Qg Q gs Q gd td(on) tr td(off) tf LS + LD Gate-to-Source Leakage Forward Gate-to-Source Leakage Reverse Total Gate Charge Gate-to-Source Charge Gate-to-Drain (‘Miller’) Charge Turn-On Delay Time Rise Time Turn-Off Delay Time Fall Time Total Inductance — — — — — — — — — — — — — — — — — — — 6.8 -100 100 290 72 77 35 170 190 190 — Ciss C oss C rss Input Capacitance Output Capacitance Reverse Transfer Capacitance — — — 6000 1400 400 — — — Test Conditions VGS = 0V, ID =-1.0mA Reference to 25°C, ID = -1.0mA VGS = -12V, ID = -22A➃ VGS = -12V, ID = -35A➃ VDS = VGS, ID = -1.0mA VDS >-15V, IDS = -22A ➃ VDS= -80V ,VGS=0V VDS = -80V, VGS = 0V, TJ = 125°C VGS = -20V VGS = 20V VGS =-12V, ID = -35A VDS = -50V Ω V S( ) Ω Parameter BVDSS Drain-to-Source Breakdown Voltage -100 ∆BV DSS/∆T J Temperature Coefficient of Breakdown — Voltage RDS(on) Static Drain-to-Source On-State — Resistance — VGS(th) Gate Threshold Voltage -2.0 gfs Forward Transconductance 15 IDSS Zero Gate Voltage Drain Current — — µA nA nC VDD = -50V, ID = -35A, VGS =-12V, RG = 2.35Ω ns nH Measured from drain lead (6mm/0.25in. from package) to source lead (6mm/0.25in. from package) pF VGS = 0V, VDS = -25V f = 1.0MHz Source-Drain Diode Ratings and Characteristics Parameter Min Typ Max Units IS ISM Continuous Source Current (Body Diode) Pulse Source Current (Body Diode) ➀ — — — — -35* -140 A VSD t rr Q RR Diode Forward Voltage Reverse Recovery Time Reverse Recovery Charge — — — — — — -3.3 300 2.1 V nS µC ton Forward Turn-On Time Test Conditions Tj = 25°C, IS = -35A, VGS = 0V ➃ Tj = 25°C, IF = -35A, di/dt ≤ -100A/µs VDD ≤ -50V ➃ Intrinsic turn-on time is negligible. Turn-on speed is substantially controlled by LS + LD. *Current is limited by internal wire diameter Thermal Resistance Parameter RthJC RthCS RthJA Junction-to-Case Case-to-Sink Junction-to-Ambient Min Typ Max Units — — — — 0.50 0.21 — — 48 Test Conditions °C/W Typical socket mount Note: Corresponding Spice and Saber models are available on the G&S Website. For footnotes refer to the last page 2 www.irf.com Radiation Characteristics Pre-Irradiation IRHM9160 International Rectifier Radiation Hardened MOSFETs are tested to verify their radiation hardness capability. The hardness assurance program at International Rectifier is comprised of two radiation environments. Every manufacturing lot is tested for total ionizing dose (per notes 5 and 6) using the TO-3 package. Both pre- and post-irradiation performance are tested and specified using the same drive circuitry and test conditions in order to provide a direct comparison. Table 1. Electrical Characteristics @ Tj = 25°C, Post Total Dose Irradiation ➄➅ Parameter BVDSS VGS(th) IGSS IGSS IDSS RDS(on) RDS(on) VSD 100K Rads(Si)1 Drain-to-Source Breakdown Voltage Gate Threshold Voltage Gate-to-Source Leakage Forward Gate-to-Source Leakage Reverse Zero Gate Voltage Drain Current Static Drain-to-Source ➃ On-State Resistance (TO-3) Static Drain-to-Source ➃ On-State Resistance (TO-254AA) Diode Forward Voltage ➃ Units 300K Rads (Si)2 Test Conditions Min Max Min Max -100 -2.0 — — — — — -4.0 -100 100 -25 0.073 -100 -2.0 — — — — — -5.0 -100 100 -25 0.073 µA Ω VGS = 0V, ID = -1.0mA VGS = VDS, ID = -1.0mA VGS = -20V VGS = 20 V VDS=-80V, VGS =0V VGS = -12V, ID =-22A — 0.073 — 0.073 Ω VGS = -12V, ID =-22A — -3.3 — - 3.3 V VGS = 0V, IS = -35A V nA 1. Part number IRHM9160 (JANSR2N7425) 2. Part number IRHM93160 (JANSF2N7425) International Rectifier radiation hardened MOSFETs have been characterized in heavy ion environment for Single Event Effects (SEE). Single Event Effects characterization is illustrated in Fig. a and Table 2. Table 2. Single Event Effect Safe Operating Area Ion LE T MeV/(mg/cm²)) Energy (MeV) VD S(V) Range (µm) @VGS=0V @VGS=5V @VGS=10V @VGS=15V @VGS=20V Cu 28 285 43 -100 -100 -100 -70 -60 Br 36.8 305 39 -100 -100 -70 -50 -40 I 59.9 345 32.8 -60 — — — — -120 -100 VDS -80 Cu -60 Br -40 I -20 0 0 5 10 15 20 VGS Fig a. Single Event Effect, Safe Operating Area For footnotes refer to the last page www.irf.com 3 IRHM9160 1000 Pre-Irradiation 1000 VGS -15V -12V -10V -9.0V -8.0V -7.0V -6.0V BOTTOM -5.0V 100 100 -5.0V 20µs PULSE WIDTH TJ = 25 °C 10 1 10 100 V DS = -50V 20µs PULSE WIDTH 6 7 8 9 10 Fig 3. Typical Transfer Characteristics 11 R DS(on) , Drain-to-Source On Resistance (Normalized) TJ = 150 ° C --I D , Drain-to-Source Current (A) TJ = 25 ° C --VGS , Gate-to-Source Voltage (V) 100 Fig 2. Typical Output Characteristics 3.0 5 10 -VDS , Drain-to-Source Voltage (V) 1000 10 1 Fig 1. Typical Output Characteristics 100 -5.0V 20µs PULSE WIDTH TJ = 150 °C 10 -VDS , Drain-to-Source Voltage (V) 4 VGS -15V -12V -10V -9.0V -8.0V -7.0V -6.0V BOTTOM -5.0V TOP -I D , Drain-to-Source Current (A) -I D , Drain-to-Source Current (A) TOP -38A ID = -35A 2.5 2.0 1.5 1.0 0.5 0.0 -60 -40 -20 VGS = -12V 0 20 40 60 80 100 120 140 160 TJ , Junction Temperature( °C) Fig 4. Normalized On-Resistance Vs.Temperature www.irf.com Pre-Irradiation VGS = 0V, f = 1MHz Ciss = Cgs + Cgd , Cds SHORTED Crss = Cgd Coss = Cds + Cgd 8000 Ciss 6000 4000 C oss 2000 Crss 20 -VGS , Gate-to-Source Voltage (V) 10000 C, Capacitance (pF) IRHM9160 VDS =-80V VDS =-50V VDS =-20V 16 12 8 4 FOR TEST CIRCUIT SEE FIGURE 13 0 0 1 10 0 100 50 100 150 200 250 QG , Total Gate Charge (nC) -VDS , Drain-to-Source Voltage (V) Fig 6. Typical Gate Charge Vs. Gate-to-Source Voltage Fig 5. Typical Capacitance Vs. Drain-to-Source Voltage 1000 1000 OPERATION IN THIS AREA LIMITED BY R DS(on) -II D , Drain Current (A) -ISD , Reverse Drain Current (A) ID = -35A 100 100 TJ = 150 ° C 10 TJ = 25 ° C 1ms 10 V GS = 0 V 1 0.0 1.0 2.0 3.0 4.0 -VSD ,Source-to-Drain Voltage (V) Fig 7. Typical Source-Drain Diode Forward Voltage www.irf.com 5.0 100us 1 10ms TC = 25 ° C TJ = 150 ° C Single Pulse 1 10 100 1000 -VDS , Drain-to-Source Voltage (V) Fig 8. Maximum Safe Operating Area 5 IRHM9160 Pre-Irradiation 40 LIMITED BY PACKAGE VGS 32 -ID , Drain Current (A) RD V DS D.U.T. RG + V DD VGS Pulse Width ≤ 1 µs Duty Factor ≤ 0.1 % 24 16 Fig 10a. Switching Time Test Circuit 8 td(on) tr t d(off) tf VGS 10% 0 25 50 75 100 125 150 TC , Case Temperature ( ° C) 90% VDS Fig 9. Maximum Drain Current Vs. CaseTemperature Fig 10b. Switching Time Waveforms Thermal Response (Z thJC ) 1 0.50 0.1 0.01 0.20 0.10 0.05 0.02 0.01 0.001 0.00001 PDM SINGLE PULSE (THERMAL RESPONSE) t1 t2 Notes: 1. Duty factor D = t 1 / t 2 2. Peak T J = P DM x Z thJC + TC 0.0001 0.001 0.01 0.1 1 t1 , Rectangular Pulse Duration (sec) Fig 11. Maximum Effective Transient Thermal Impedance, Junction-to-Case 6 www.irf.com Pre-Irradiation IRHM9160 L VDS IA S tp VD D A D R IV E R 0.0 1Ω 15V Fig 12a. Unclamped Inductive Test Circuit IAS EAS , Single Pulse Avalanche Energy (mJ) D .U .T RG -20V VGS 1200 ID -17A -25A BOTTOM -35A TOP 1000 800 600 400 200 0 25 50 75 100 125 150 Starting TJ , Junction Temperature ( °C) Fig 12c. Maximum Avalanche Energy Vs. Drain Current tp V (BR)DSS Fig 12b. Unclamped Inductive Waveforms Current Regulator Same Type as D.U.T. 50KΩ QG -12V 12V .2µF .3µF -12V QGS QGD D.U.T. +VDS VGS VG -3mA Charge Fig 13a. Basic Gate Charge Waveform www.irf.com IG ID Current Sampling Resistors Fig 13b. Gate Charge Test Circuit 7 IRHM9160 Pre-Irradiation Foot Notes: ➃ Pulse width ≤ 300 µs; Duty Cycle ≤ 2% ➄ Total Dose Irradiation with VGS Bias. ➀ Repetitive Rating; Pulse width limited by maximum junction temperature. ➁ VDD = -25V, starting TJ = 25°C, L=0.82mH Peak IL = -35A, VGS =-12V ➂ ISD ≤ -35A, di/dt ≤ -480A/µs, VDD ≤ -100V, TJ ≤ 150°C 12 volt VGS applied and VDS = 0 during irradiation per MIL-STD-750, method 1019, condition A. ➅ Total Dose Irradiation with VDS Bias. -80 volt VDS applied and VGS = 0 during irradiation per MlL-STD-750, method 1019, condition A. Case Outline and Dimensions — TO-254AA 0.12 [.005] 0.12 [.005] 6.60 [.260] 6.32 [.249] 13.84 [.545] 13.59 [.535] 3.78 [.149] 3.53 [.139] A 20.32 [.800] 20.07 [.790] 17.40 [.685] 16.89 [.665] 13.84 [.545] 13.59 [.535] B C 2 22.73 [.895] 21.21 [.835] 20.32 [.800] 20.07 [.790] 17.40 [.685] 16.89 [.665] 17.40 [.685] 16.89 [.665] 0.84 [.033] MAX. 4.82 [.190] 3.81 [.150] 3.81 [.150] 2X 1.14 [.045] 0.89 [.035] 0.36 [.014] 2X 3.81 [.150] 13.84 [.545] 13.59 [.535] B R 1.52 [.060] 3 4.06 [.160] 3.56 [.140] 3X 1.14 [.045] 0.89 [.035] 0.36 [.014] B A B A NOT ES : 1. 2. 3. 4. 2 3 3X 3.81 [.150] 1.27 [.050] 1.02 [.040] A 1 1 6.60 [.260] 6.32 [.249] 13.84 [.545] 13.59 [.535] 3.78 [.149] 3.53 [.139] 1.27 [.050] 1.02 [.040] DIME NS IONING & T OLE RANCING PE R AS ME Y14.5M-1994. ALL DIMENS IONS ARE S HOWN IN MILLIMETE RS [INCHES ]. CONT ROLLING DIME NS ION: INCH. CONFORMS T O JEDEC OUT LINE TO-254AA. PIN AS S IGNME NT S 1 = DRAIN 2 = S OURCE 3 = GAT E CAUTION BERYLLIA WARNING PER MIL-PRF-19500 Packages containing beryllia shall not be ground, sandblasted, machined or have other operations performed on them which will produce beryllia or beryllium dust. Furthermore, beryllium oxide packages shall not be placed in acids that will produce fumes containing beryllium. IR WORLD HEADQUARTERS: 233 Kansas St., El Segundo, California 90245, USA Tel: (310) 252-7105 TAC Fax: (310) 252-7903 Visit us at www.irf.com for sales contact information. Data and specifications subject to change without notice. 12/01 8 www.irf.com