PD - 91729 IRG4ZH71KD PRELIMINARY Surface Mountable Short Circuit Rated UltraFast IGBT INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE Features • High short circuit rating optimized for motor control, tsc =10µs, VCC = 720V , TJ = 125°C, VGE = 15V • IGBT co-packaged with HEXFRED ultrafast, ultra-soft-recovery antiparallel diodes for use in bridge configurations • Combines low conduction losses with high switching speed • Low profile low inductance SMD-10 Package • Separated control & Power-connections for easy paralleling • Inherently Good coplanarity • Easy solder inspection and cleaning n-channel C VCES = 1200V VCE(ON)typ = 2.89V G @VGE = 15V, IC = 42A E(k) E Benefits • Highest power density and efficiency available • HEXFRED Diodes optimized for performance with IGBTs. Minimized recovery characteristics • IGBTs optimized for specific application conditions Absolute Maximum Ratings Parameter VCES IC @ TC = 25°C IC @ TC = 100°C ICM ILM IF @ TC = 100°C IFM tsc VGE PD @ TC = 25°C PD @ TC = 100°C TJ TSTG Collector-to-Emitter Voltage Continuous Collector Current Continuous Collector Current Pulsed Collector Current Clamped Inductive Load Current Diode Continuous Forward Current Diode Maximum Forward Current Short Circuit Withstand Time Gate-to-Emitter Voltage Maximum Power Dissipation Maximum Power Dissipation Operating Junction and Storage Temperature Range Max. Units 1200 78 42 156 156 42 156 10 ± 20 350 140 -55 to +150 V A µs V W °C Thermal Resistance Parameter RθJC RθJC RθCS Junction-to-Case - IGBT Junction-to-Case - Diode SMD-10 Case-to-Heatsink (typical), * Weight Min. Typ. Max. ––– ––– ––– ––– ––– ––– 0.44 6.0(0.21) 0.36 0.69 ––– ––– Units °C/W g (oz) * Assumes device soldered to 3.0 oz. Cu on 3.0mm IMS/Aluminum board, mounted to flat, greased heatsink. www.irf.com 1 IRG4ZH71KD Electrical Characteristics @ TJ = 25°C (unless otherwise specified) V(BR)CES ∆V(BR)CES/∆TJ VCE(on) VGE(th) ∆VGE(th)/∆TJ gfe ICES VFM IGES Parameter Min. Typ. Max. Units Collector-to-Emitter Breakdown Voltage 1200 — — V Temperature Coeff. of Breakdown Voltage — 0.26 — V/°C Collector-to-Emitter Saturation Voltage — 2.89 3.9 — 3.73 — V — 2.55 — Gate Threshold Voltage 3.0 — 6.0 Temperature Coeff. of Threshold Voltage — -11 — mV/°C Forward Transconductance 23 34 — S Zero Gate Voltage Collector Current — — 500 µA — — 10 mA Diode Forward Voltage Drop — 2.45 3.7 V — 2.40 — Gate-to-Emitter Leakage Current — — ±100 nA Conditions VGE = 0V, IC = 250µA VGE = 0V, IC = 4.0mA IC = 42A VGE = 15V IC = 78A See Fig. 2, 5 IC = 42A, TJ = 150°C VCE = VGE, IC = 250µA VCE = VGE, IC = 1.5mA VCE = 50V, IC = 42A VGE = 0V, VCE = 1200V VGE = 0V, VCE = 1200V, TJ = 150°C IC = 42A See Fig. 13 IC = 42A, TJ = 150°C VGE = ±20V Switching Characteristics @ TJ = 25°C (unless otherwise specified) Qg Qge Qgc td(on) tr td(off) tf Eon Eoff Ets tsc Parameter Total Gate Charge (turn-on) Gate - Emitter Charge (turn-on) Gate - Collector Charge (turn-on) Turn-On Delay Time Rise Time Turn-Off Delay Time Fall Time Turn-On Switching Loss Turn-Off Switching Loss Total Switching Loss Short Circuit Withstand Time td(on) tr td(off) tf Ets LE Cies Coes Cres trr Turn-On Delay Time Rise Time Turn-Off Delay Time Fall Time Total Switching Loss Internal Emitter Inductance Input Capacitance Output Capacitance Reverse Transfer Capacitance Diode Reverse Recovery Time Irr Diode Peak Reverse Recovery Current Qrr Diode Reverse Recovery Charge di(rec)M/dt Diode Peak Rate of Fall of Recovery During tb 2 Min. — — — — — — — — — — 10 Typ. 380 48 120 80 45 215 220 3.64 3.17 6.81 — — — — — — — — — — — — — — — — — — 91 48 430 400 14.6 2.0 5620 400 94 107 160 10 16 680 1400 250 320 Max. Units Conditions 570 IC = 42A 72 nC VCC = 400V See Fig.8 180 VGE = 15V — — TJ = 25°C ns 320 IC = 42A, VCC = 800V 330 VGE = 15V, RG = 5.0Ω — Energy losses include "tail" — mJ and diode reverse recovery 9.8 See Fig. 9,10,18 — µs VCC = 720V, TJ = 125°C VGE = 15V, RG = 5.0Ω — TJ = 150°C, See Fig. 10,11,18 — IC = 42A, VCC = 800V ns — VGE = 15V, RG = 5.0Ω, — Energy losses include "tail" — mJ and diode reverse recovery — nH Measured 5mm from package — VGE = 0V — pF VCC = 30V See Fig. 7 — ƒ = 1.0MHz 160 ns TJ = 25°C See Fig. 240 TJ = 125°C 14 IF = 42A 15 A TJ = 25°C See Fig. 24 TJ = 125°C 15 VR = 200V 1020 nC TJ = 25°C See Fig. 2100 TJ = 125°C 16 di/dt = 200A/µs — A/µs TJ = 25°C See Fig. — TJ = 125°C 17 www.irf.com IRG4ZH71KD 40 LOAD CURRENT (A) F or b oth: D uty c y c le : 50% T J = 12 5° C T sink = 90 °C G a te d riv e a s s pe c ified 30 P ow er D is s ipation = 44 W S q u a re w a v e : 60% of rated voltage 20 I 10 Id e a l d io d es 0 0.1 1 10 100 f, Frequency (KHz) Fig. 1 - Typical Load Current vs. Frequency (Load Current = IRMS of fundamental) 1000 100 I C , Collector-to-Emitter Current (A) I C , Collector Current (A) 1000 100 TJ = 150 ° C 10 TJ = 25 °C V GE = 15V 80µs PULSE WIDTH 1 1.0 2.0 3.0 4.0 5.0 VCE , Collector-to-Emitter Voltage (V) Fig. 2 - Typical Output Characteristics www.irf.com TJ = 150 ° C TJ = 25 °C 10 V CC = 50V 5µs PULSE WIDTH 1 5 6 7 8 9 VGE , Gate-to-Emitter Voltage (V) Fig. 3 - Typical Transfer Characteristics 3 IRG4ZH71KD 5.0 VCE , Collector-to-Emitter Voltage(V) Maximum DC Collector Current(A) 80 60 40 20 0 25 50 75 100 125 4.0 IC = 84 A 3.0 IC = 42 A IC = 21 A 2.0 1.0 -60 -40 -20 150 TC , Case Temperature (° C) Fig. 4 - Maximum Collector Current vs. Case Temperature VGE = 15V 80 us PULSE WIDTH 0 20 40 60 80 100 120 140 160 TJ , Junction Temperature (° C) Fig. 5 - Typical Collector-to-Emitter Voltage vs. Junction Temperature T he rm a l R es p on se (Zth JC ) 1 D = 0.50 0.1 0.20 PDM 0.10 t 1 t2 0.05 0.02 0.01 Notes: 1. Duty factor D = t S IN G LE P U LS E (TH E R M A L R E S P O N S E ) 1 / t2 2. Peak TJ = PDM x Z thJC + TC 0.01 0.0001 0.001 0.01 0.1 1 10 A 100 t 1 , R e cta n g u la r P u ls e D u ra tio n (se c) Fig. 6 - Maximum Effective Transient Thermal Impedance, Junction-to-Case 4 www.irf.com IRG4ZH71KD VGE = Cies = Cres = Coes = C, Capacitance (pF) 6000 0V, f = 1MHz Cge + Cgc , Cce SHORTED Cgc Cce + Cgc Cies 4000 2000 Coes 20 VGE , Gate-to-Emitter Voltage (V) 8000 VCC = 400V I C = 42A 16 12 8 4 Cres 0 1 10 0 100 0 VCE , Collector-to-Emitter Voltage (V) Total Switching Losses (mJ) Total Switching Losses (mJ) 100 15 10 5 10 20 30 40 50 RG , Gate Resistance (Ω) Fig. 9 - Typical Switching Losses vs. Gate Resistance www.irf.com 240 320 400 Fig. 8 - Typical Gate Charge vs. Gate-to-Emitter Voltage V CC = 800V V GE = 15V TJ = 25 ° C I C = 42A 0 160 QG , Total Gate Charge (nC) Fig. 7 - Typical Capacitance vs. Collector-to-Emitter Voltage 20 80 RG = 5.0 Ω VGE = 15V VCC = 800V IC = 84 A IC = 42 A 10 IC = 21 A 1 -60 -40 -20 0 20 40 60 80 100 120 140 160 TJ , Junction Temperature (° C ) Fig. 10 - Typical Switching Losses vs. Junction Temperature 5 IRG4ZH71KD 1000 = 5.0Ω = 150 ° C = 800V = 15V I C , Collector Current (A) RG TJ VCC VGE 30 VGE = 20V T J = 125 oC 100 20 10 10 SAFE OPERATING AREA 1 0 20 30 40 50 60 70 80 1 90 10 100 1000 10000 VCE , Collector-to-Emitter Voltage (V) I C , Collector Current (A) Fig. 11 - Typical Switching Losses vs. Collector Current Fig. 12 - Turn-Off SOA 1000 Instantaneous forward current - IF (A) Total Switching Losses (mJ) 40 100 TJ = 150°C TJ = 125°C TJ = 25°C 10 1 0.0 2.0 4.0 6.0 Forward Voltage Drop - V FM (V) Fig. 13 - Typical Forward Voltage Drop vs. Instantaneous Forward Current 6 www.irf.com IRG4ZH71KD 300 100 I F = 84A I F = 42A I F = 21A I F = 84A I F = 42A I F = 21A Irr- ( A) trr- (nC) 200 10 100 V R = 2 00 V T J = 12 5 °C T J = 25 °C VR = 200 V T J = 12 5°C T J = 25 °C 0 100 di f /dt - (A/µ s) 1 100 1000 1000 d i f /dt - (A /µ s ) Fig. 15 - Typical Recovery Current vs. dif/dt Fig. 14 - Typical Reverse Recovery vs. dif/dt 5000 10000 VR = 2 00V T J = 12 5°C T J = 25 °C 4000 I F = 84A di (rec) M/dt- (A /µs) I F = 42A I F = 84A Qrr- (nC) 3000 I F = 42A I F = 21A 2000 IF = 21A 1000 1000 V R = 2 00V T J = 1 2 5 °C T J = 2 5 °C 0 100 di f /dt - (A/µ s) 1000 Fig. 16 - Typical Stored Charge vs. dif/dt www.irf.com 100 100 1000 di f /dt - (A/µ s) Fig. 17 - Typical di(rec)M/dt vs. dif/dt 7 IRG4ZH71KD 90% V ge Same type device as D .U.T. +V ge V ce 430µF 80% of Vce D .U .T. Ic 90% Ic 10% V ce Ic 5% Ic td (off) tf E off = Fig. 18a - Test Circuit for Measurement of ∫ Vce Ic dt t1+5µ S V ce ic dt t1 ILM, Eon, Eoff(diode), trr, Qrr, Irr, td(on), tr, td(off), tf t1 t2 Fig. 18b - Test Waveforms for Circuit of Fig. 18a, Defining Eoff, td(off), tf G A T E V O LT A G E D .U .T . 10% + V g trr Q rr = Ic trr id Icdtdt tx ∫ +V g tx 10% V c c 10% Irr Vcc D U T V O LT A G E AND CURRENT Vce V pk Irr Vcc 10% Ic Ipk 90% Ic Ic D IO D E R E C O V E R Y W AVEFORMS tr td(on) 5% V c e t1 ∫ t2 c e ieIcdt dt E on = VVce t1 t2 E rec = D IO D E R E V E R S E RECOVERY ENERG Y t3 Fig. 18c - Test Waveforms for Circuit of Fig. 18a, Defining Eon, td(on), tr 8 ∫ Vc Ic dt t4 V d id dt t3 t4 Fig. 18d - Test Waveforms for Circuit of Fig. 18a, Defining Erec, trr, Qrr, Irr www.irf.com IRG4ZH71KD V g G A T E S IG N A L D E V IC E U N D E R T E S T C U R R E N T D .U .T . V O LT A G E IN D .U .T . C U R R E N T IN D 1 t0 t1 t2 Figure 18e. Macro Waveforms for Figure 18a's Test Circuit D.U.T. L 1000V Vc* RL= 960V 4 X IC @25°C 0 - 960V 50V 600 0µ F 100 V Figure 19. Clamped Inductive Load Test Circuit Figure 20. Pulsed Collector Current Test Circuit Notes: ➀ Repetitive rating: VGE=20V; pulse width limited by maximum junction temperature (figure 20) ➁ VCC=80%(VCES), VGE=20V, L=10µH, RG= 5.0Ω (figure 19) ➂ Pulse width ≤ 80µs; duty factor ≤ 0.1% ➃ Pulse width 5.0µs, single shot www.irf.com 9 IRG4ZH71KD Case Outline — SMD-10 17.30 Dimensions are shown in millimeters 14.20 E(k) G 4.27 n/c 0.90 5.55 29.00 C 0.90 E E Recommended footprint WORLD HEADQUARTERS: 233 Kansas St., El Segundo, California 90245, Tel: (310) 322 3331 EUROPEAN HEADQUARTERS: Hurst Green, Oxted, Surrey RH8 9BB, UK Tel: ++ 44 1883 732020 IR CANADA: 7321 Victoria Park Ave., Suite 201, Markham, Ontario L3R 2Z8, Tel: (905) 475 1897 IR GERMANY: Saalburgstrasse 157, 61350 Bad Homburg Tel: ++ 49 6172 96590 IR ITALY: Via Liguria 49, 10071 Borgaro, Torino Tel: ++ 39 11 451 0111 IR FAR EAST: K&H Bldg., 2F, 30-4 Nishi-Ikebukuro 3-Chome, Toshima-Ku, Tokyo Japan 171 Tel: 81 3 3983 0086 IR SOUTHEAST ASIA: 315 Outram Road, #10-02 Tan Boon Liat Building, Singapore 0316 Tel: 65 221 8371 http://www.irf.com/ Data and specifications subject to change without notice. 5/98 10 www.irf.com