PD - 91684A PRELIMINARY IRG4PSC71KD Short Circuit Rated UltraFast IGBT INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE C Features • Hole-less clip/pressure mount package compatible with TO-247 and TO-264, with reinforced pins • High abort circuit rating IGBTs, optimized for motorcontrol • Minimum switching losses combined with low conduction losses • Tightest parameter distribution • IGBT co-packaged with ultrafast soft recovery antiparallel diode • Creepage distance increased to 5.35mm VCES = 600V VCE(on) typ. = 1.83V G @VGE = 15V, IC = 60A E n-ch an nel Benefits • Highest current rating copack IGBT • Maximum power density, twice the power handling of the TO-247, less space than TO-264 • HEXFREDTM diode optimized for operation with IGBT, to minimize EMI, noise and switching losses SUPER - 247 Absolute Maximum Ratings Parameter VCES IC @ TC = 25°C IC @ TC = 100°C ICM ILM IF @ TC = 100°C IFM tsc VGE PD @ TC = 25°C PD @ TC = 100°C TJ TSTG Collector-to-Emitter Voltage Continuous Collector Current Continuous Collector Current Pulsed Collector Current Clamped Inductive Load Current Diode Continuous Forward Current Diode Maximum Forward Current Short Circuit Withstand Time Gate-to-Emitter Voltage Maximum Power Dissipation Maximum Power Dissipation Operating Junction and Storage Temperature Range Soldering Temperature, for 10 sec. Max. Units 600 85 60 200 200 50 200 10 ± 20 350 140 -55 to +150 V A µs V W °C 300 (0.063 in. (1.6mm) from case) Thermal Resistance\ Mechanical Parameter RθJC RθJC RθCS RθJA www.irf.com Junction-to-Case - IGBT Junction-to-Case - Diode Case-to-Sink, flat, greased surface Junction-to-Ambient, typical socket mount Recommended Clip Force Weight Min. Typ. Max. ––– ––– ––– ––– 20.0(2.0) ––– ––– ––– 0.24 ––– ––– 6 (0.21) 0.36 0.69 ––– 38 ––– ––– Units °C/W N (kgf) g (oz) 1 5/11/99 IRG4PSC71KD Electrical Characteristics @ TJ = 25°C (unless otherwise specified) V(BR)CES ∆V(BR)CES/∆TJ VCE(on) VGE(th) ∆VGE(th)/∆TJ gfe ICES VFM IGES Parameter Min. Typ. Max. Units Collector-to-Emitter Breakdown Voltage 600 — — V Temperature Coeff. of Breakdown Voltage — 0.5 — V/°C Collector-to-Emitter Saturation Voltage — 1.83 2.3 — 2.20 — V — 1.81 — Gate Threshold Voltage 3.0 — 6.0 Temperature Coeff. of Threshold Voltage — -8.0 — mV/°C Forward Transconductance 31 46 — S Zero Gate Voltage Collector Current — — 500 µA — — 13 mA Diode Forward Voltage Drop — 1.4 1.7 V — 1.3 — Gate-to-Emitter Leakage Current — — ±100 nA Conditions VGE = 0V, IC = 250µA VGE = 0V, IC = 10mA IC = 60A VGE = 15V See Fig. 2, 5 IC = 100A IC = 60A, TJ = 150°C VCE = VGE, IC = 250µA VCE = VGE, IC = 1.5mA VCE = 50V, IC = 60A VGE = 0V, VCE = 600V VGE = 0V, VCE = 600V, TJ = 150°C IC = 60A See Fig. 13 IC = 60A, TJ = 150°C VGE = ±20V Switching Characteristics @ TJ = 25°C (unless otherwise specified) Qg Qge Qgc td(on) tr td(off) tf Eon Eoff Ets tsc Parameter Total Gate Charge (turn-on) Gate - Emitter Charge (turn-on) Gate - Collector Charge (turn-on) Turn-On Delay Time Rise Time Turn-Off Delay Time Fall Time Turn-On Switching Loss Turn-Off Switching Loss Total Switching Loss Short Circuit Withstand Time td(on) tr td(off) tf Ets LE Cies Coes Cres trr Turn-On Delay Time Rise Time Turn-Off Delay Time Fall Time Total Switching Loss Internal Emitter Inductance Input Capacitance Output Capacitance Reverse Transfer Capacitance Diode Reverse Recovery Time Irr Diode Peak Reverse Recovery Current Qrr Diode Reverse Recovery Charge di(rec)M /dt Diode Peak Rate of Fall of Recovery During tb 2 Min. — — — — — — — — — — 10 — — — — — — — — — — — — — — — — — Typ. Max. Units Conditions 340 510 IC = 60A 44 66 nC VCC = 400V See Fig.8 160 240 VGE = 15V 82 — 107 — TJ = 25°C ns 282 423 IC = 60A, VCC = 480V 97 146 VGE = 15V, RG = 5.0Ω 3.95 — Energy losses include "tail" 2.33 — mJ and diode reverse recovery 6.28 7.7 See Fig. 9,10,18 — — µs VCC = 360V, TJ = 125°C VGE = 15V, RG = 5.0Ω , VCPK < 500V 87 — TJ = 150°C, See Fig. 11,18 104 — IC = 60A, VCC = 480V ns 374 — VGE = 15V, RG = 5.0Ω 143 — Energy losses include "tail" 8.5 — mJ and diode reverse recovery 13 — nH Measured 5mm from package 6900 — VGE = 0V 730 — pF VCC = 30V See Fig. 7 190 — ƒ = 1.0MHz 82 120 ns TJ = 25°C See Fig. 140 210 TJ = 125°C 14 IF = 60A 8.2 12 A TJ = 25°C See Fig. 13 20 TJ = 125°C 15 VR = 200V 364 546 nC TJ = 25°C See Fig. 1084 1625 TJ = 125°C 16 di/dt = 200A/µs 328 — A/µs TJ = 25°C See Fig. 266 — TJ = 125°C 17 www.irf.com IRG4PSC71KD 60 LOAD CURRENT (A) F o r b o th : D u ty c y c le : 5 0 % TJ = 1 2 5 ° C T sink = 9 0 ° C G a te d riv e a s s p e c ifie d 45 P o w e r D is s ip a tio n = 58 W S q u a re w a v e : 6 0% of rate d volta ge 30 I 15 Id e a l d io d e s 0 0.1 1 10 100 f, Frequency (KHz) Fig. 1 - Typical Load Current vs. Frequency (Load Current = IRMS of fundamental) Ic , Collector-to-Emitter Current (A) 100 I C , Collector-to-Emitter Current (A) 1000 1000 100 TJ = 1 5 0 °C 10 TJ = 2 5 °C VG E = 15 V 2 0µ s P U L SE W ID TH A 1 0 1 2 3 VC E , C olle ctor-to-Em itter Vo ltag e (V) Fig. 2 - Typical Output Characteristics www.irf.com 4 TJ = 150 °C 10 TJ = 25 °C V CC = 50V 5µs PULSE WIDTH 1 5 6 7 8 9 10 11 VGE , Gate-to-Emitter Voltage (V) Fig. 3 - Typical Transfer Characteristics 3 IRG4PSC71KD 100 3.0 VCE , Collector-to-Emitter Voltage(V) Maximum DC Collector Current (A) LIM ITED BY PA C KA G E 80 60 40 20 V G E = 15 V A 0 25 50 75 100 125 I C = 120 A 2.0 I C = 60 A I C = 30 A 1.0 -60 -40 -20 150 0 20 40 60 80 100 120 140 160 TJ , Junction Temperature ( ° C) TC , C ase Tem p era ture (°C ) Fig. 4 - Maximum Collector Current vs. Case Temperature VGE = 15V 80 us PULSE WIDTH Fig. 5 - Typical Collector-to-Emitter Voltage vs. Junction Temperature Thermal Response (ZthJC) 1 D = 0 .50 0.1 0 .20 PDM 0 .1 0 0.05 0.0 2 0.01 t 1 t2 SIN G L E PU L SE (T HE R M A L R ES PO N SE ) Notes: 1. Duty factor D = t 1 / t2 2. Peak TJ = PDM x Z thJC + TC 0.01 0.0001 0.001 0.01 0.1 1 10 A 100 t 1 , R e ctang ular Pulse D uratio n (sec) Fig. 6 - Maximum Effective Transient Thermal Impedance, Junction-to-Case 4 www.irf.com IRG4PSC71KD 10000 VGE , Gate-to-Emitter Voltage (V) 8000 C, Capacitance (pF) 20 VGE = 0V, f = 1MHz Cies = Cge + Cgc , Cce SHORTED Cres = Cgc Coes = Cce + Cgc C ies 6000 4000 2000 Coes VCC = 400V I C = 60A 16 12 8 4 C res 0 1 10 0 100 0 VCE , Collector-to-Emitter Voltage (V) Fig. 7 - Typical Capacitance vs. Collector-to-Emitter Voltage Total Switching Losses (mJ) Total Switching Losses (mJ) V CC = 480V V GE = 15V TJ = 25 ° C I C = 60A 12.0 10.0 8.0 6.0 0 10 20 30 40 RG , Gate Resistance ( Ω ) Fig. 9 - Typical Switching Losses vs. Gate Resistance www.irf.com (Ω) 200 300 400 Fig. 8 - Typical Gate Charge vs. Gate-to-Emitter Voltage 100 14.0 100 QG , Total Gate Charge (nC) 50 RG = 5.0 Ω VGE = 15V VCC = 480V IC = 120 A 10 IC = 60 A IC = 30 A 1 -60 -40 -20 0 20 40 60 80 100 120 140 160 TJ , Junction Temperature ( ° C ) Fig. 10 - Typical Switching Losses vs. Junction Temperature 5 IRG4PSC71KD RG TJ VCC 20 VGE 1000 = 5.0 Ω = 150 °C = 480V = 15V I C, Collector Current (A) Total Switching Losses (mJ) 24 16 12 8 VGE = 20V T J = 125 oC 100 4 SAFE OPERATING AREA 10 0 30 60 90 1 120 10 100 1000 VCE , Collector-to-Emitter Voltage (V) I C , Collector Current (A) Fig. 11 - Typical Switching Losses vs. Collector-to-Emitter Current Fig. 12 - Turn-Off SOA Instantaneous forward current - IF (A) 1000 100 10 T J = 1 5 0 °C T J = 1 2 5 °C TJ = 2 5 °C 1 0.4 0.8 1.2 1.6 2.0 2.4 F o rw a rd V o lta g e D ro p - V F M (V ) Fig. 13 - Maximum Forward Voltage Drop vs. Instantaneous Forward Current 6 www.irf.com IRG4PSC71KD 100 200 VR = 2 0 0 V T J = 1 2 5 °C T J = 2 5 °C VR = 2 0 0 V T J = 1 2 5 °C T J = 2 5 °C 160 Irr- ( A) trr- (nC) 120 10 I F = 30 A I F = 6 0A I F = 1 20 A 80 40 I F = 30A I F = 6 0A I F = 1 20A 0 100 d i f /d t - (A /µ s) 1 100 1000 1000 d i f /d t - (A /µ s ) Fig. 15 - Typical Recovery Current vs. dif/dt Fig. 14 - Typical Reverse Recovery vs. dif/dt 10000 4000 VR = 2 0 0 V T J = 1 2 5 °C T J = 2 5 °C VR = 2 0 0 V T J = 1 2 5 °C T J = 2 5 °C di (rec) M/dt- (A /µs) Qrr- (nC) 3000 I F = 3 0A I F = 60A I F = 120 A 2000 I F = 120 A 1000 I F = 60A I F = 30A 1000 0 100 d i f /dt - (A /µ s) 1000 Fig. 16 - Typical Stored Charge vs. dif/dt www.irf.com 100 100 1000 d i f /d t - (A /µ s) Fig. 17 - Typical di(rec)M/dt vs. dif/dt 7 IRG4PSC71KD 90% Vge Same ty pe device as D .U.T. +Vge V ce 430µF 80% of Vce D .U .T. Ic 9 0 % Ic 10% Vce Ic 5 % Ic td (o ff) tf E o ff = Fig. 18a - Test Circuit for Measurement of ILM, Eon, Eoff(diode), trr, Qrr, Irr, td(on), tr, td(off), tf t1 ∫ t1 + 5 µ S V c e icIcd tdt Vce t1 t2 Fig. 18b - Test Waveforms for Circuit of Fig. 18a, Defining Eoff, td(off), tf G A T E V O L T A G E D .U .T . 1 0 % +V g trr Q rr = Ic ∫ trr id t Ic ddt tx +Vg tx 10% Vcc 1 0 % Irr V cc D UT VO LTAG E AN D CU RRE NT Vce V pk Irr Vcc 1 0 % Ic Ip k 9 0 % Ic Ic D IO D E R E C O V E R Y W A V E FO R M S tr td (o n ) 5% Vce t1 ∫ t2 ce ieIcd t dt E on = V Vce t1 t2 E re c = D IO D E R E V E R S E REC OVERY ENER GY t3 Fig. 18c - Test Waveforms for Circuit of Fig. 18a, Defining Eon, td(on), tr 8 ∫ t4 VVd d idIc d t dt t3 t4 Fig. 18d - Test Waveforms for Circuit of Fig. 18a, Defining Erec, trr, Qrr, Irr www.irf.com IRG4PSC71KD V g G A T E S IG N A L D E V IC E U N D E R T E S T C U R R E N T D .U .T . V O L T A G E IN D .U .T . C U R R E N T IN D 1 t0 t1 t2 Figure 18e. Macro Waveforms for Figure 18a's Test Circuit D.U.T. L 1000V Vc* RL= 480V 4 X IC @25°C 0 - 480V 50V 6000µ F 100 V Figure 19. Clamped Inductive Load Test Circuit www.irf.com Figure 20. Pulsed Collector Current Test Circuit 9 IRG4PSC71KD Notes: Repetitive rating: VGE=20V; pulse width limited by maximum junction temperature (figure 20) VCC=80%(VCES), VGE=20V, L=10µH, RG= 5.0Ω (figure 19) Pulse width ≤ 80µs; duty factor ≤ 0.1% Pulse width 5.0µs, single shot Current limited by the package, (Die current = 100A) Case Outline and Dimensions — Super-247 Dimensions are shown in millimeters WORLD HEADQUARTERS: 233 Kansas St., El Segundo, California 90245, Tel: (310) 322 3331 IR GREAT BRITAIN: Hurst Green, Oxted, Surrey RH8 9BB, UK Tel: ++ 44 1883 732020 IR CANADA: 15 Lincoln Court, Brampton, Ontario L6T3Z2, Tel: (905) 453 2200 IR GERMANY: Saalburgstrasse 157, 61350 Bad Homburg Tel: ++ 49 6172 96590 IR ITALY: Via Liguria 49, 10071 Borgaro, Torino Tel: ++ 39 11 451 0111 IR FAR EAST: K&H Bldg., 2F, 30-4 Nishi-Ikebukuro 3-Chome, Toshima-Ku, Tokyo Japan 171 Tel: 81 3 3983 0086 IR SOUTHEAST ASIA: 1 Kim Seng Promenade, Great World City West Tower, 13-11, Singapore 237994 Tel: ++ 65 838 4630 IR TAIWAN:16 Fl. Suite D. 207, Sec. 2, Tun Haw South Road, Taipei, 10673, Taiwan Tel: 886-2-2377-9936 http://www.irf.com/ Data and specifications subject to change without notice. 5/99 10 www.irf.com