IRF IRG4BC30KDS

PD -91594C
IRG4BC30KD-S
Short Circuit Rated
UltraFast IGBT
INSULATED GATE BIPOLAR TRANSISTOR WITH
ULTRAFAST SOFT RECOVERY DIODE
C
Features
• High short circuit rating optimized for motor control,
tsc =10µs, @360V VCE (start), TJ = 125°C,
VGE = 15V
• Combines low conduction losses with high
switching speed
• tighter parameter distribution and higher efficiency
than previous generations
• IGBT co-packaged with HEXFREDTM ultrafast,
ultrasoft recovery antiparallel diodes
VCES = 600V
VCE(on) typ. = 2.21V
G
@VGE = 15V, IC = 16A
E
n-ch an nel
Benefits
• Latest generation 4 IGBTs offer highest power
density motor controls possible
• HEXFREDTM diodes optimized for performance
with IGBTs. Minimized recovery characteristic
reduce noise, EMI and switching losses
• This part replaces the IRGBC30KD2-S and
IRGBC30MD2-S products
• For hints see design tip 97003
D 2Pak
Absolute Maximum Ratings
Parameter
VCES
IC @ TC = 25°C
IC @ TC = 100°C
ICM
ILM
IF @ TC = 100°C
IFM
tsc
VGE
PD @ TC = 25°C
PD @ TC = 100°C
TJ
TSTG
Collector-to-Emitter Voltage
Continuous Collector Current
Continuous Collector Current
Pulsed Collector Current Q
Clamped Inductive Load Current R
Diode Continuous Forward Current
Diode Maximum Forward Current
Short Circuit Withstand Time
Gate-to-Emitter Voltage
Maximum Power Dissipation
Maximum Power Dissipation
Operating Junction and
Storage Temperature Range
Soldering Temperature, for 10 sec.
Mounting Torque, 6-32 or M3 Screw.
Max.
Units
600
28
16
58
58
12
58
10
± 20
100
42
-55 to +150
V
A
µs
V
W
°C
300 (0.063 in. (1.6mm) from case)
10 lbf•in (1.1 N•m)
Thermal Resistance
Parameter
RθJC
RθJC
RθCS
RθJA
Wt
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Junction-to-Case - IGBT
Junction-to-Case - Diode
Case-to-Sink, Flat, Greased Surface
Junction-to-Ambient ( PCB Mounted,steady-state)U
Weight
Typ.
Max.
Units
–––
1.2
2.5
–––
40
–––
°C/W
0.5
–––
1.44
g
1
4/24/2000
IRG4BC30KD-S
Electrical Characteristics @ TJ = 25°C (unless otherwise specified)
V(BR)CES
∆V(BR)CES/∆TJ
VCE(on)
VGE(th)
∆VGE(th)/∆TJ
gfe
ICES
VFM
IGES
Parameter
Min. Typ. Max. Units
Collector-to-Emitter Breakdown VoltageS 600 —
—
V
Temperature Coeff. of Breakdown Voltage — 0.54 — V/°C
Collector-to-Emitter Saturation Voltage
— 2.21 2.7
— 2.88 —
V
— 2.36 —
Gate Threshold Voltage
3.0
—
6.0
Temperature Coeff. of Threshold Voltage
—
-12
— mV/°C
Forward Transconductance T
5.4 8.1
—
S
Zero Gate Voltage Collector Current
—
—
250
µA
—
— 2500
Diode Forward Voltage Drop
—
1.4 1.7
V
—
1.3 1.6
Gate-to-Emitter Leakage Current
—
— ±100 nA
Conditions
VGE = 0V, IC = 250µA
VGE = 0V, IC = 1.0mA
IC = 16A
VGE = 15V
See Fig. 2, 5
IC = 28A
IC = 16A, TJ = 150°C
VCE = VGE, IC = 250µA
VCE = VGE, IC = 250µA
VCE = 100V, IC = 16A
VGE = 0V, VCE = 600V
VGE = 0V, VCE = 600V, TJ = 150°C
IC = 12A
See Fig. 13
IC = 12A, TJ = 150°C
VGE = ±20V
Switching Characteristics @ TJ = 25°C (unless otherwise specified)
Qg
Qge
Qgc
td(on)
tr
td(off)
tf
Eon
Eoff
Ets
tsc
Parameter
Total Gate Charge (turn-on)
Gate - Emitter Charge (turn-on)
Gate - Collector Charge (turn-on)
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
Fall Time
Turn-On Switching Loss
Turn-Off Switching Loss
Total Switching Loss
Short Circuit Withstand Time
td(on)
tr
td(off)
tf
Ets
LE
Cies
Coes
Cres
trr
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
Fall Time
Total Switching Loss
Internal Emitter Inductance
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Diode Reverse Recovery Time
Irr
Diode Peak Reverse Recovery Current
Qrr
Diode Reverse Recovery Charge
di(rec)M/dt
Diode Peak Rate of Fall of Recovery
During tb
2
Min.
—
—
—
—
—
—
—
—
—
—
10
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
Typ. Max. Units
Conditions
67 100
IC = 16A
11
16
nC
VCC = 400V
See Fig.8
25
37
VGE = 15V
60
—
42
—
TJ = 25°C
ns
160 250
IC = 16A, VCC = 480V
80 120
VGE = 15V, RG = 23Ω
0.60 —
Energy losses include "tail"
0.58 —
mJ and diode reverse recovery
1.18 1.6
See Fig. 9,10,14
—
—
µs
VCC = 360V, TJ = 125°C
VGE = 15V, RG = 10Ω , VCPK < 500V
58
—
TJ = 150°C,
See Fig. 11,14
42
—
IC = 16A, VCC = 480V
ns
210
—
VGE = 15V, RG = 23Ω
160
—
Energy losses include "tail"
1.69 —
mJ and diode reverse recovery
7.5
—
nH
Measured 5mm from package
920
—
VGE = 0V
110
—
pF
VCC = 30V
See Fig. 7
27
—
ƒ = 1.0MHz
42
60
TJ = 25°C See Fig.
ns
80 120
TJ = 125°C
14
IF = 12A
3.5 6.0
TJ = 25°C See Fig.
A
5.6
10
TJ = 125°C
15
VR = 200V
80 180
TJ = 25°C See Fig.
nC
220 600
TJ = 125°C
16
di/dt = 200Aµs
180
—
TJ = 25°C See Fig.
A/µs
160
—
TJ = 125°C
17
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IRG4BC30KD-S
2.5
For both:
D uty cy cle: 50%
TJ = 125°C
55°C
T s ink = 90°C
G ate drive as specified
LOAD CURRENT (A)
2.0
P ow e r Dis sip ation = 1.8 W
1.5
S q u a re w a v e :
6 0% of rate d
volta ge
1.0
I
0.5
Id e a l d io d e s
0.0
0.1
1
10
100
f, Frequency (KHz)
Fig. 1 - Typical Load Current vs. Frequency
(Load Current = IRMS of fundamental)
100
TJ = 25 o C
TJ = 150 o C
10
1
V
= 15V
20µs PULSE WIDTH
GE
0.1
1
10
VCE , Collector-to-Emitter Voltage (V)
Fig. 2 - Typical Output Characteristics
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I C , Collector-to-Emitter Current (A)
I C , Collector-to-Emitter Current (A)
100
TJ = 150 o C
10
TJ = 25 oC
1
V
= 50V
5µs PULSE WIDTH
CC
0.1
5
10
15
VGE , Gate-to-Emitter Voltage (V)
Fig. 3 - Typical Transfer Characteristics
3
IRG4BC30KD-S
4.0
30
V
= 15V
80 us PULSE WIDTH
VCE , Collector-to-Emitter Voltage(V)
GE
Maximum DC Collector Current(A)
25
20
15
10
5
0
25
50
75
100
125
150
I C = 32 A
3.0
I C = 16 A
I C = 8.0A
8A
2.0
1.0
-60 -40 -20
0
20
40
60
80 100 120 140 160
, Junction Temperature ( °C)
TT
J J, Junction Temperature ( °C )
TC , Case Temperature ( ° C)
Fig. 4 - Maximum Collector Current vs. Case
Temperature
Fig. 5 - Typical Collector-to-Emitter Voltage
vs. Junction Temperature
Thermal Response (Z thJC )
10
1
D = 0.50
0.20
P DM
0.10
0.1
0.01
0.00001
0.05
0.02
0.01
t1
t2
SINGLE PULSE
(THERMAL RESPONSE)
0.0001
Notes:
1. Duty factor D = t 1 / t 2
2. Peak TJ = PDM x Z thJC + TC
0.001
0.01
0.1
1
t1 , Rectangular Pulse Duration (sec)
Fig. 6 - Maximum Effective Transient Thermal Impedance, Junction-to-Case
4
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IRG4BC30KD-S
VGE = 0V,
f = 1MHz
Cies = Cge + Cgc , Cce SHORTED
Cres = Cgc
Coes = Cce + Cgc
C, Capacitance (pF)
1200
Cies
900
600
C
oes
300
20
VGE , Gate-to-Emitter Voltage (V)
1500
VCC = 400V
I C = 16A
16
12
8
4
C
res
0
1
10
0
100
0
VCE , Collector-to-Emitter Voltage (V)
Fig. 7 - Typical Capacitance vs.
Collector-to-Emitter Voltage
10
V CC = 480V
V GE = 15V
TJ = 25 ° C
1.40 I C = 16A
1.30
1.20
1.10
1.00
0
10
20
30
40
RG, ,Gate
Gate Resistance
Resistance ((Ohm)
Ω)
RG
Fig. 9 - Typical Switching Losses vs. Gate
Resistance
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40
60
80
Fig. 8 - Typical Gate Charge vs.
Gate-to-Emitter Voltage
Total Switching Losses (mJ)
Total Switching Losses (mJ)
1.50
20
QG , Total Gate Charge (nC)
50
RG = Ohm
23Ω
VGE = 15V
VCC = 480V
IC = 32 A
IC = 16 A
1
IC = 8.0A
8A
0.1
-60 -40 -20
0
20
40
60
80 100 120 140 160
TJ , Junction Temperature ( °C )
Fig. 10 - Typical Switching Losses vs.
Junction Temperature
5
IRG4BC30KD-S
RG
TJ
VCC
4.0 VGE
Ω
= 23
Ohm
= 150 ° C
= 480V
= 15V
100
I C , Collector-to-Emitter Current (A)
Total Switching Losses (mJ)
5.0
3.0
2.0
1.0
VGE = 20V
oC
125°C
T J = 125
10
SAFE OPERATING AREA
0.0
1
0
8
16
24
32
40
1
I C , Collector-to-emitter Current (A)
10
100
1000
VCE , Collector-to-Emitter Voltage (V)
Fig. 11 - Typical Switching Losses vs.
Collector-to-Emitter Current
Fig. 12 - Turn-Off SOA
Insta ntane ous Forward C urrent - I F (A )
100
TJ = 15 0°C
TJ = 12 5°C
10
TJ = 2 5°C
1
0.4
0.8
1.2
1.6
2.0
2.4
Fo rwa rd V oltage D rop - V F M (V )
Fig. 13 - Maximum Forward Voltage Drop vs. Instantaneous Forward Current
6
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IRG4BC30KD-S
100
160
VR = 2 0 0 V
T J = 1 2 5 °C
T J = 2 5 °C
VR = 2 0 0 V
T J = 1 2 5 °C
T J = 2 5 °C
120
I IR R M - (A )
t rr - (ns)
I F = 24 A
I F = 1 2A
80
I F = 6 .0 A
I F = 2 4A
I F = 1 2A
10
I F = 6 .0A
40
0
100
d i f /d t - (A /µ s)
1
100
1000
1000
di f /dt - (A /µs)
Fig. 14 - Typical Reverse Recovery vs. dif/dt
Fig. 15 - Typical Recovery Current vs. dif/dt
600
10000
VR = 2 0 0 V
T J = 1 2 5 °C
T J = 2 5 °C
d i(re c )M /d t - (A /µ s)
VR = 2 0 0 V
T J = 1 2 5 °C
T J = 2 5 °C
Q R R - (n C )
400
I F = 24 A
I F = 12 A
200
1000
IF = 6.0 A
I F = 12 A
100
I F = 2 4A
I F = 6.0 A
0
100
d i f /dt - (A /µs)
Fig. 16 - Typical Stored Charge vs. dif/dt
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1000
10
100
1000
d i f /d t - (A /µ s)
Fig. 17 - Typical di(rec)M/dt vs. dif/dt
7
IRG4BC30KD-S
Same ty pe
device as
D .U.T.
430µF
80%
of Vce
90%
D .U .T.
10%
Vge
VC
90%
t d(off)
10%
IC 5%
Fig. 18a - Test Circuit for Measurement of
tf
tr
ILM, Eon, Eoff(diode), trr, Qrr, Irr, td(on), tr, td(off), tf
t d(on)
t=5µs
Eon
Eoff
E ts = (Eon +Eoff )
Fig. 18b - Test Waveforms for Circuit of Fig. 18a, Defining
Eoff, td(off), tf
G A T E V O L T A G E D .U .T .
1 0 % +V g
trr
Q rr =
Ic
∫
trr
id
t
Ic ddt
tx
+Vg
tx
10% Vcc
1 0 % Irr
V cc
D UT VO LTAG E
AN D CU RRE NT
Vce
V pk
Irr
Vcc
1 0 % Ic
Ip k
9 0 % Ic
Ic
D IO D E R E C O V E R Y
W A V E FO R M S
tr
td (o n )
5% Vce
t1
∫
t2
ce ieIcd t dt
Vce
E on = V
t1
t2
E re c =
D IO D E R E V E R S E
REC OVERY ENER GY
t3
Fig. 18c - Test Waveforms for Circuit of Fig. 18a,
Defining Eon, td(on), tr
8
∫
t4
VVd
d idIc
d t dt
t3
t4
Fig. 18d - Test Waveforms for Circuit of Fig. 18a,
Defining Erec, trr, Qrr, Irr
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IRG4BC30KD-S
V g G A T E S IG N AL
D EV IC E UN DE R T E ST
C UR R EN T D.U .T .
V O LT A G E IN D .U.T .
C UR R EN T IN D 1
t0
t1
t2
Figure 18e. Macro Waveforms for Figure 18a's Test Circuit
D.U.T.
L
1 000 V
RL=
Vc *
480V
4 X IC @25°C
0 - 480V
50V
6 00 0µ F
100 V
Figure 20. Pulsed Collector Current
Test Circuit
Figure 19. Clamped Inductive Load Test Circuit
Tape & Reel Information
D2Pak
TRR
1 .6 0 (.0 6 3 )
1 .5 0 (.0 5 9 )
4 .1 0 ( .1 6 1 )
3 .9 0 ( .1 5 3 )
F E E D D I R E C T IO N
1 .8 5 ( .0 7 3 )
1 .6 5 ( .0 6 5 )
1 .6 0 (.0 6 3)
1 .5 0 (.0 5 9)
0 .3 6 8 (.0 1 4 5 )
0 .3 4 2 (.0 1 3 5 )
1 1.6 0 (.4 5 7 )
1 1.4 0 (.4 4 9 )
15 .42 ( .6 09 )
15 .22 ( .6 01 )
2 4 .3 0 (.95 7 )
2 3 .9 0 (.94 1 )
TRL
1 0 .9 0 (.4 2 9)
1 0 .7 0 (.4 2 1)
1 .7 5 ( .0 69 )
1 .2 5 ( .0 49 )
4 .7 2 (.1 3 6 )
4 .5 2 (.1 7 8 )
1 6 .10 (.6 3 4 )
1 5 .90 (.6 2 6 )
F E E D D IR E C T IO N
1 3.50 ( .5 32 )
1 2.80 ( .5 04 )
27 .4 0 ( 1.0 79 )
23 .9 0 ( .94 1)
4
3 3 0.00
( 14 .1 7 3)
M AX .
N O T ES :
1. C O MF O R M S T O EIA-4 18 .
2. C O N TR O LL IN G D IM EN S IO N : MIL LIM ET ER .
3. D IM EN S IO N M EA SU R ED @ H U B.
4. IN C LU D E S F LAN G E D IST O R T IO N @ O U TER ED G E.
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6 0.00 (2 .3 62)
M IN .
2 6 .4 0 ( 1.03 9 )
2 4 .4 0 ( .9 61 )
3
30 .4 0 (1.19 7)
M A X.
4
9
IRG4BC30KD-S
Notes:
Q Repetitive rating: VGE=20V; pulse width limited by maximum junction temperature (figure 20)
R VCC=80%(VCES), VGE=20V, L=10µH, RG= 23Ω (figure 19)
S Pulse width ≤ 80µs; duty factor ≤ 0.1%.
T Pulse width 5.0µs, single shot.
U When mounted on 1" square PCB (FR-4 or G-10 Material ).
For recommended footprint and soldering techniques refer to application note #AN-994.
D2Pak Package Outline
1 0 .5 4 (.4 1 5 )
1 0 .2 9 (.4 0 5 )
1 .4 0 (.0 55 )
M A X.
-A -
1 .3 2 (.0 5 2 )
1 .2 2 (.0 4 8 )
2
1 .7 8 (.0 7 0 )
1 .2 7 (.0 5 0 )
1
1 0 .1 6 (.4 0 0 )
REF .
-B -
4 .6 9 (.1 8 5 )
4 .2 0 (.1 6 5 )
6 .4 7 (.2 5 5 )
6 .1 8 (.2 4 3 )
3
1 5 .4 9 (.6 1 0 )
1 4 .7 3 (.5 8 0 )
2 .7 9 (.1 1 0 )
2 .2 9 (.0 9 0 )
2 .6 1 (.1 0 3 )
2 .3 2 (.0 9 1 )
5 .2 8 (.2 0 8 )
4 .7 8 (.1 8 8 )
3X
1 .4 0 (.0 5 5 )
1 .1 4 (.0 4 5 )
5 .0 8 (.2 0 0 )
0 .5 5 (.0 2 2 )
0 .4 6 (.0 1 8 )
0 .9 3 (.0 3 7 )
3X
0 .6 9 (.0 2 7 )
0 .2 5 (.0 1 0 )
M
8 .8 9 (.3 5 0 )
REF.
1 .3 9 (.0 5 5 )
1 .1 4 (.0 4 5 )
B A M
M IN IM U M R E C O M M E N D E D F O O T P R IN T
1 1 .43 (.4 5 0 )
NOTES:
1 D IM E N S IO N S A F T E R S O L D E R D IP .
2 D IM E N S IO N IN G & T O L E R A N C IN G P E R A N S I Y 1 4 .5 M , 1 9 8 2 .
3 C O N T R O L L IN G D IM E N S IO N : IN C H .
4 H E A T S IN K & L E A D D IM E N S IO N S D O N O T IN C L U D E B U R R S .
L E A D A S S IG N M E N T S
1 - GATE
2 - D R A IN
3 - SOURCE
8 .8 9 (.3 5 0 )
1 7 .7 8 (.7 0 0 )
3 .8 1 (.1 5 0 )
2 .0 8 (.0 8 2 )
2X
2 .5 4 (.1 0 0 )
2X
IR WORLD HEADQUARTERS: 233 Kansas St., El Segundo, California 90245, USA Tel: (310) 252-7105
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Data and specifications subject to change without notice. 10/00
10
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