IRF IRFP3703PBF

PD - 95481
SMPS MOSFET
IRFP3703PbF
HEXFET® Power MOSFET
Applications
l Synchronous Rectification
l Active ORing
l Lead-Free
VDSS
RDS(on) max
ID
30V
0.0028Ω
210A†
Benefits
l Ultra Low On-Resistance
l Low Gate Impedance to Reduce Switching
Losses
l Fully Avalanche Rated
TO-247AC
Absolute Maximum Ratings
Parameter
ID @ TC = 25°C
ID @ TC = 100°C
IDM
PD @TC = 25°C
PD @TA = 25°C
VGS
dv/dt
TJ, TSTG
Max.
210 †
100 †
Continuous Drain Current, VGS @ 10V
Continuous Drain Current, VGS @ 10V
Pulsed Drain Current 
Power Dissipation
Power Dissipation
Linear Derating Factor
Gate-to-Source Voltage
Peak Diode Recovery dv/dt ƒ
Junction and Storage Temperature Range
Units
A
1000
230
3.8
1.5
± 20
5.0
-55 to + 175
W
W/°C
V
V/ns
°C
Thermal Resistance
Parameter
RθJC
RθCS
RθJA
Junction-to-Case
Case-to-Sink, Flat, Greased Surface
Junction-to-Ambient
Typ.
Max.
Units
–––
0.24
–––
0.65
–––
40
°C/W
Typical SMPS Topologies
l
l
Forward and Bridge Converters with Synchronous Rectification for Telecom and
Industrial Applications
Offline High Power AC/DC Convertors using Synchronous Rectification
Notes  through † are on page 8
www.irf.com
1
7/16/04
IRFP3703PbF
Static @ TJ = 25°C (unless otherwise specified)
Parameter
Drain-to-Source Breakdown Voltage
∆V(BR)DSS/∆TJ Breakdown Voltage Temp. Coefficient
V(BR)DSS
RDS(on)
VGS(th)
IDSS
IGSS
Min.
30
–––
–––
Static Drain-to-Source On-Resistance
–––
Gate Threshold Voltage
2.0
–––
Drain-to-Source Leakage Current
–––
Gate-to-Source Forward Leakage
–––
Gate-to-Source Reverse Leakage
–––
Typ.
–––
0.028
2.3
2.8
–––
–––
–––
–––
–––
Max. Units
Conditions
–––
V
VGS = 0V, ID = 250µA
––– V/°C Reference to 25°C, ID = 1mA
2.8
VGS = 10V, ID = 76A „
mΩ
3.9
VGS = 7.0V, ID = 76A „
4.0
V
VDS = VGS, ID = 250µA
20
VDS = 24V, VGS = 0V
µA
250
VDS = 24V, VGS = 0V, TJ = 150°C
200
VGS = 20V
nA
-200
VGS = -20V
Dynamic @ TJ = 25°C (unless otherwise specified)
gfs
Qg
Qgs
Qgd
td(on)
tr
td(off)
tf
Ciss
Coss
Crss
Coss
Coss
Coss eff.
Parameter
Forward Transconductance
Total Gate Charge
Gate-to-Source Charge
Gate-to-Drain ("Miller") Charge
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
Fall Time
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Output Capacitance
Output Capacitance
Effective Output Capacitance
Min.
150
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
Typ.
–––
209
62
42
18
123
53
24
8250
3000
290
10360
3060
2590
Max. Units
Conditions
–––
S
VDS = 24V, ID = 76A
–––
ID = 76A
–––
nC VDS = 24V
–––
VGS = 10V, „
–––
VDD = 15V, VGS = 10V
–––
ID = 76A
ns
–––
RG = 1.8Ω
–––
VGS = 10V „
–––
VGS = 0V
–––
VDS = 25V
–––
pF
ƒ = 1.0MHz
–––
VGS = 0V, VDS = 1.0V, ƒ = 1.0MHz
–––
VGS = 0V, VDS = 24V, ƒ = 1.0MHz
–––
VGS = 0V, VDS = 0V to 24V …
Avalanche Characteristics
Parameter
EAS
IAR
EAR
Single Pulse Avalanche Energy‚
Avalanche Current
Repetitive Avalanche Energy
Typ.
Max.
Units
–––
–––
–––
1700
76
23
mJ
A
mJ
Diode Characteristics
IS
I SM
VSD
t rr
Q rr
2
Parameter
Continuous Source Current
(Body Diode)
Pulsed Source Current
(Body Diode) 
Diode Forward Voltage
Reverse Recovery Time
Reverse RecoveryCharge
Min. Typ. Max. Units
–––
––– 210†
–––
––– 1000
–––
–––
–––
0.8
80
185
1.3
120
275
A
V
ns
nC
Conditions
D
MOSFET symbol
showing the
G
integral reverse
S
p-n junction diode.
TJ = 25°C, IS = 76A, VGS = 0V „
TJ = 25°C, IF = 76A, VDS = 16V
di/dt = 100A/µs „
www.irf.com
IRFP3703PbF
10000
1000
VGS
15V
10V
8.0V
7.0V
6.0V
5.5V
5.0V
BOTTOM 4.5V
1000
100
100
4.5V
10
20µs PULSE WIDTH
TJ = 25 °C
1
0.1
1
10
100
2.0
RDS(on) , Drain-to-Source On Resistance
(Normalized)
TJ = 25 ° C
TJ = 175 ° C
100
V DS = 15V
20µs PULSE WIDTH
5.0
6.0
7.0
8.0
9.0
10.0
VGS , Gate-to-Source Voltage (V)
Fig 3. Typical Transfer Characteristics
www.irf.com
1
10
100
Fig 2. Typical Output Characteristics
10000
10
4.0
20µs PULSE WIDTH
TJ = 175 °C
VDS , Drain-to-Source Voltage (V)
Fig 1. Typical Output Characteristics
1000
4.5V
10
0.1
VDS , Drain-to-Source Voltage (V)
I D , Drain-to-Source Current (A)
VGS
15V
10V
8.0V
7.0V
6.0V
5.5V
5.0V
BOTTOM 4.5V
TOP
I D , Drain-to-Source Current (A)
I D , Drain-to-Source Current (A)
TOP
ID = 260A
1.5
1.0
0.5
0.0
-60 -40 -20
VGS = 10V
0
20
40
60
80 100 120 140 160
TJ , Junction Temperature( °C)
Fig 4. Normalized On-Resistance
Vs. Temperature
3
IRFP3703PbF
VGS = 0V,
f = 1MHz
Ciss = Cgs + Cgd , Cds SHORTED
Crss = Cgd
Coss = Cds + Cgd
C, Capacitance (pF)
12000
10000
Ciss
8000
6000
Coss
4000
2000
0
20
VGS , Gate-to-Source Voltage (V)
14000
10
12
8
4
0
100
FOR TEST CIRCUIT
SEE FIGURE 13
0
40
Fig 5. Typical Capacitance Vs.
Drain-to-Source Voltage
120
160
200
240
280
320
Fig 6. Typical Gate Charge Vs.
Gate-to-Source Voltage
1000
ISD , Reverse Drain Current (A)
80
QG , Total Gate Charge (nC)
VDS , Drain-to-Source Voltage (V)
10000
OPERATION IN THIS AREA LIMITED
BY RDS(on)
ID , Drain Current (A)
100
TJ = 175 ° C
1000
10
TJ = 25 ° C
V GS = 0 V
0.4
0.8
1.2
10us
100us
100
1
0.1
0.0
1.6
2.0
VSD ,Source-to-Drain Voltage (V)
Fig 7. Typical Source-Drain Diode
Forward Voltage
4
VDS = 24V
16
Crss
1
ID = 76A
2.4
1ms
10
TC = 25 ° C
TJ = 175 ° C
Single Pulse
1
10ms
10
100
VDS , Drain-to-Source Voltage (V)
Fig 8. Maximum Safe Operating Area
www.irf.com
IRFP3703PbF
250
RD
V DS
LIMITED BY PACKAGE
VGS
200
D.U.T.
I D , Drain Current (A)
RG
150
+
-VDD
10V
Pulse Width ≤ 1 µs
Duty Factor ≤ 0.1 %
100
Fig 10a. Switching Time Test Circuit
50
VDS
90%
0
25
50
75
100
125
150
175
TC , Case Temperature ( °C)
10%
VGS
Fig 9. Maximum Drain Current Vs.
Case Temperature
td(on)
tr
t d(off)
tf
Fig 10b. Switching Time Waveforms
Thermal Response (Z thJC )
1
D = 0.50
0.20
0.1
0.10
0.05
0.02
0.01
0.01
SINGLE PULSE
(THERMAL RESPONSE)
PDM
t1
t2
0.001
0.00001
Notes:
1. Duty factor D = t 1 / t 2
2. Peak TJ = P DM x Z thJC + TC
0.0001
0.001
0.01
0.1
1
t1, Rectangular Pulse Duration (sec)
Fig 11. Maximum Effective Transient Thermal Impedance, Junction-to-Case
www.irf.com
5
IRFP3703PbF
ID
31A
54A
76A
TOP
5000
DRIVER
L
VDS
EAS , Single Pulse Avalanche Energy (mJ)
6000
15V
BOTTOM
4000
D.U.T
RG
+
V
- DD
IAS
20V
tp
0.01Ω
A
3000
2000
Fig 12a. Unclamped Inductive Test Circuit
1000
V(BR)DSS
tp
0
25
50
75
100
125
150
175
Starting TJ , Junction Temperature ( °C)
Fig 12c. Maximum Avalanche Energy
Vs. Drain Current
I AS
Fig 12b. Unclamped Inductive Waveforms
Current Regulator
Same Type as D.U.T.
QG
10 V
QGS
50KΩ
12V
.2µF
.3µF
QGD
D.U.T.
+
V
- DS
VGS
VG
3mA
IG
ID
Current Sampling Resistors
Charge
Fig 13a. Basic Gate Charge Waveform
6
Fig 13b. Gate Charge Test Circuit
www.irf.com
IRFP3703PbF
Peak Diode Recovery dv/dt Test Circuit
+
D.U.T
Circuit Layout Considerations
• Low Stray Inductance
• Ground Plane
• Low Leakage Inductance
Current Transformer
ƒ
+
‚
-
-
„
+

RG
•
•
•
•
Driver Gate Drive
P.W.
+
dv/dt controlled by RG
Driver same type as D.U.T.
ISD controlled by Duty Factor "D"
D.U.T. - Device Under Test
Period
D=
-
VDD
P.W.
Period
VGS=10V
*
D.U.T. ISD Waveform
Reverse
Recovery
Current
Body Diode Forward
Current
di/dt
D.U.T. VDS Waveform
Diode Recovery
dv/dt
Re-Applied
Voltage
Body Diode
VDD
Forward Drop
Inductor Curent
Ripple ≤ 5%
ISD
* VGS = 5V for Logic Level Devices
Fig 14. For N-Channel HEXFET® Power MOSFET
www.irf.com
7
IRFP3703PbF
TO-247AC Package Outline
Dimensions are shown in millimeters (inches)
TO-247AC Part Marking Information
EXAMPLE: T HIS IS AN IRFPE30
WIT H ASSEMBLY
LOT CODE 5657
ASSEMBLED ON WW 35, 2000
IN THE AS SEMBLY LINE "H"
Note: "P" in assembly line
position indicates "Lead-Free"
INT ERNATIONAL
RECT IFIER
LOGO
ASSEMBLY
LOT CODE
PART NUMBER
IRFPE30
56
035H
57
DAT E CODE
YEAR 0 = 2000
WEEK 35
LINE H
Notes:
 Repetitive rating; pulse width limited by
„ Pulse width ≤ 300µs; duty cycle ≤ 2%.
‚ Starting TJ = 25°C, L = 0.6mH
… Coss eff. is a fixed capacitance that gives the same charging time
max. junction temperature.
as Coss while VDS is rising from 0 to 80% VDSS
RG = 25Ω, IAS = 76A.
ƒ ISD ≤ 76A, di/dt ≤ 100A/µs, VDD ≤ V(BR)DSS,
TJ ≤ 175°C
† Calculated continuous current based on maximum allowable
junction temperature. Package limitation current is 90A
Data and specifications subject to change without notice.
This product has been designed and qualified for the Industrial market.
Qualification Standards can be found on IR’s Web site.
IR WORLD HEADQUARTERS: 233 Kansas St., El Segundo, California 90245, USA Tel: (310) 252-7105
TAC Fax: (310) 252-7903
Visit us at www.irf.com for sales contact information.7/04
8
www.irf.com
Note: For the most current drawings please refer to the IR website at:
http://www.irf.com/package/