CGY41 HiRel L- and S-Band GaAs General Purpose Amplifier HiRel Discrete and Microwave Semiconductor Single-stage monolithic microwave IC (MMIC-amplifier ) Application range: 100 MHz to 3 GHz 4 3 1 2 Gain: 9.5 dB typ. @ 1.8 GHz Low noise figure: 2.7 dB typ. @ 1.8 GHz Bandwidth: 3 GHz typ. @ -3 dB, VSWR < 2 : 1 * Operating voltage range: 3 to 5.5 V Input and output matched to 50 Individual current control with neg. gate bias Hermetically sealed ceramic package micro-x ESD: Electrostatic discharge sensitive device, observe handling precautions! Type Marking Ordering Code Circuit Diagram Package (Pin Configuration) CGY41 (ql) (ql) Quality Level: - see below Micro-X P: Professional Quality, Ordering Code: on request H: High Rel Quality, Ordering Code: on request S: Space Quality, Ordering Code: on request (see order instructions for ordering example) IFAG IMM RPD D 1 of 6 Target DATASHEET CGY41 Maximum ratings Symbol Value Unit Drain-voltage VD 5.5 V Gate-voltage VG -4 ... 0.5 V VDG 9.5 V PRFIN 16 dBm TCh 175 °C Tstg -55...+175 °C Ptot 440 mW RthChS 160 K/W Drain-gate voltage RF Input power 1) Channel temperature Storage temperature range Total power dissipation (TS < 82°C) 2) Thermal resistance Channel-soldering point 2) Notes: Exceeding any of the max. ratings may cause permanent damage to the device. Appropriate handling is required to protect the electrostatic sensitive MMIC against degradation due to excess voltage or current spikes. Proper ground connection of leads 2 and 4 ( with min. inductance ) is required to achieve the guaranteed RF performance, stable operating conditions and adequate cooling. 1) @ VD > 4.5 V derating required. 2) Ts is measured on the source lead at the soldering point to the PCB. IFAG IMM RPD D 2 of 6 Target DATASHEET CGY41 Electrical Characteristics TA = 25 °C, VG = 0 V, VD = 4.5 V, RS = RL = 50 Ω unless otherwise specified (for application circuit see next page) Characteristics Symbol min typ max Unit Drain current IDSS 40 60 80 mA Power gain f = 200 MHz f = 1800 MHz G Gain flatness f = 200 to 1000 MHz f = 800 to 1800 MHz Noise figure dB - 0.4 1.1 2 dB dB - 2.5 - - 2.7 4.0 RLIN dB - 13 12 9.5 RLOUT f = 200 to 1000 MHz f = 800 to 1800 MHz Third order intercept point 13 11 F f = 200 to 1000 MHz f = 800 to 1800 MHz Output return loss 10.5 9.5 GF f = 200 to 1000 MHz f = 800 to 1800 MHz Input return loss 9.5 8.5 dB - 12 - - 12 9.5 IP3 dBm Two tone intermodulation test f1 = 806 MHz, f2 = 810 MHz 31 32 - - 18 - P0 = 10 dBm ( both carriers ) 1dB gain compression P1 dB f = 200 to 1800 MHz IFAG IMM RPD D 3 of 6 dBm Target DATASHEET CGY41 Application Circuit ( f = 800 to 1800 MHz ) V D V G C 3 D L L 2 2 C1 Input C 3 C 3 4 2 Output CGY41 50Ohm L 1 1 50Ohm 4 50 Ohm Microstripline Legend of components C1 , C2 C3 , C4 L1 L2, L3 D Chip capacitors 100 pF Chip capacitors 1 nF For optimized input matching - discrete inductor: approx. 3nH, or - printed microstripline inductor: Z approx. 100 le approx. 5 mm - discrete inductor: approx. 40 nH, as e.g. 5 turns 0.25 mm copper wire on nylon rod with M3-thread, or - printed microstripline inductor Z diode 5.6 V ( type BZW 22 C5 V 6 ) IFAG IMM RPD D 4 of 6 Target DATASHEET CGY41 Total Power Dissipation Ptot = f (TS;TA) 500 P tot [ mW ] 400 TS 300 TA 200 100 0 IFAG IMM RPD D 0 150 50 5 of 6 100 TA ; TS [ °C ] Target DATASHEET CGY41 Micro-X Package 4 Edition 2011-02 3 Published by Infineon Technologies AG 1 2 85579 Neubiberg, Germany © Infineon Technologies AG 2011 All Rights Reserved. Attention please! The information given in this document shall in no event be regarded as a guarantee of conditions or characteristics (“Beschaffenheitsgarantie“). With respect to any examples or hints given herein, any typical values stated herein and/or any information regarding the application of the device, Infineon Technologies hereby disclaims any and all warranties and liabilities of any kind, including without limitation warranties of non-infringement of intellectual property rights of an third party. Information For further information on technology, delivery terms and conditions and prices please contact your nearest Infineon Technologies Office (www.infineon.com). Warnings Due to technical requirements components may contain dangerous substances. For information on the types in question please contact your nearest Infineon Technologies Office. Infineon Technologies Components may only be used in life-support devices or systems with the express written approval of Infineon Technologies, if a failure of such components can reasonably be expected to cause the failure of that life-support device or system, or to affect the safety or effectiveness of that device or system. Life support devices or systems are intended to be implanted in the human body, or to support and/or maintain and sustain and/or protect human life. If they fail, it is reasonable to assume that the health of the user or other persons may be endangered. IFAG IMM RPD D 6 of 6 Target DATASHEET