CGY 40 GaAs MMIC ________________________________________________________________________________________________________ Datasheet * Single-stage monolithic microwave IC ( MMICamplifier ) * Application range: 100 MHz to 3 GHz * Gain: 9 dB typ. @ 1.6 GHz * Low noise figure: 2.7 dB typ. @ 1.6 GHz * Bandwidth: 3 GHz typ. @ -3 dB, VSWR < 2 : 1 * Operating voltage range: 3 to 5.5 V * Individual current control with neg. gate bias * Hermetically sealed ceramic stripline package Cerec-X ESD: Electrostatic discharge sensitive device, observe handling precautions! Type Marking Ordering code (tape and reel) CGY 40 40 Q68000-A4444 Maximum ratings Circuit Diagram (Pin Configuration) Package 1) Cerec-X Symbol Value Unit VD VG 5.5 V -3 ... 0 V 8.5 V Input power VDG PIN 16 dBm Channel temperature TCh 150 °C Storage temperature range Tstg -55...+150 °C Total power dissipation (TS < 82°C) 2) Ptot 440 mW RthChS 155 K/W Drain-voltage Current control gate voltage Drain-gate voltage Thermal resistance Channel-soldering point 2) Note: Exceeding any of the max. ratings may cause permanent damage to the device. Appropriate handling is required to protect the electrostatic sensitive MMIC against degradation due to excess voltage or current spikes. Proper ground connection of leads 2 and 4 ( with min. inductance ) is required to achieve the guaranteed RF performance, stable operating conditions and adequate cooling. 1) Dimensions see chapter Package Outlines 2) Ts is measured on the source lead at the soldering point to the PCB. Siemens Aktiengesellschaft pg. 1/5 11.01.1996 HL EH PD 21 CGY 40 GaAs MMIC ________________________________________________________________________________________________________ Electrical Characteristics TA = 25 °C, VG = 0 V, RS = RL = 50 Ω, unless otherwise specified VD = 4.5 V, ( for application circuit see next page ) Characteristics Symbol min typ max Unit Drain current ID - 60 80 mA Power gain G 9.5 8 10.5 9 12 10.5 f = 200 MHz f = 1800 MHz Gain flatness ∆G f = 200 to 1000 MHz f = 800 to 1800 MHz Noise figure 2 dB - 2.5 2.8 4.0 RLIN dB - 13 12 9.5 RLOUT dB - f = 200 to 1000 MHz f = 800 to 1800 MHz Third order intercept point 0.4 1.1 F f = 200 to 1000 MHz f = 800 to 1800 MHz Output return loss dB - f = 200 to 1000 MHz f = 800 to 1800 MHz Input return loss dB 12 12 9.5 IP3 dBm Two tone intermodulation test 31 f1 = 806 MHz, f2 = 810 MHz 32 - P = 10 dBm ( both carriers ) 0 1dB gain compression P1 dB f = 200 to 1800 MHz Gain control dynamic range - 18 - - 30 - - 20 - ∆G f = 200 to 1000 MHz f = 800 to 1800 MHz Siemens Aktiengesellschaft dBm pg. 2/5 dB 11.01.1996 HL EH PD 21 CGY 40 GaAs MMIC ________________________________________________________________________________________________________ Application Circuit ( f = 800 to 1800 MHz ) V D V G C 3 D L Input C L 2 2 C1 3 C 3 4 2 Output CGY40 50Ohm L 1 1 50Ohm 4 50 Ohm Microstripline Legend of components C1 , C2 C3 , C4 L1 L 2 , L3 D Chip capacitors 100 pF Chip capacitors 1 nF For optimized input matching - discrete inductor: approx. 3nH, or - printed microstripline inductor: Z approx. 100 Ω, le approx. 5 mm - discrete inductor: approx. 40 nH, as e.g. 5 turns 0.25 mm copper wire on nylon rod with M3-thread, or - printed microstripline inductor Z diode 5.6 V ( type BZW 22 C5 V 6 ) Siemens Aktiengesellschaft pg. 3/5 11.01.1996 HL EH PD 21 CGY 40 GaAs MMIC ________________________________________________________________________________________________________ Total Power Dissipation Ptot = f (TS;TA) 500 P tot [ mW ] 400 TS 300 TA 200 100 0 Siemens Aktiengesellschaft 0 150 50 pg. 4/5 100 TA ; TS [ °C ] 11.01.1996 HL EH PD 21 CGY 40 GaAs MMIC ________________________________________________________________________________________________________ Typical Common Source S-Parameters VG = 0V f GHz S11 Mag Z0 = 50 Ω VD = 4.5 V S21 Ang Mag S12 Ang Mag S22 Ang Mag Ang 0.2 0.20 -47 3.32 165 0.14 2 0.09 -150 0.4 0.16 -49 3.24 158 0.14 -2 0.09 148 0.6 0.15 -60 3.17 149 0.14 -6 0.11 117 0.8 0.16 -72 3.09 141 0.14 -8 0.13 97 1.0 0.15 -87 3.02 132 0.13 -10 0.16 84 1.2 0.14 -105 2.95 124 0.13 -12 0.19 76 1.4 0.15 -124 2.88 116 0.13 -13 0.21 68 1.6 0.15 -139 2.82 107 0.12 -14 0.22 60 1.8 0.16 -151 2.75 100 0.12 -15 0.24 54 2.0 0.17 -166 2.69 93 0.11 -15 0.25 48 2.2 0.18 -176 2.62 86 0.11 -15 0.26 41 2.4 0.21 173 2.56 80 0.11 -14 0.27 37 2.6 0.21 163 2.48 73 0.11 -14 0.27 32 2.8 0.23 154 2.40 67 0.11 -14 0.27 28 3.0 0.24 146 2.32 61 0.11 -13 0.27 24 3.2 0.26 140 2.24 55 0.11 -12 0.27 20 3.4 0.29 136 2.15 51 0.11 -14 0.26 18 3.6 0.31 127 2.05 44 0.11 -12 0.25 17 3.8 0.32 123 1.94 39 0.11 -11 0.24 14 4.0 0.34 118 1.83 34 0.11 -11 0.23 10 4.2 0.36 115 1.80 29 0.11 -11 0.22 6 Siemens Aktiengesellschaft pg. 5/5 11.01.1996 HL EH PD 21