INFINEON Q68000

GaAs MMIC
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CGY 31
Two-stage monolithic microwave IC (MMIC amplifier)
All-gold metallization
Chip fully passivated
Operating voltage range: 3 to 6 V
50 Ω input/output; RLIN RLOUT > 10 dB
Gain: 18 dB at 1.6 GHz
Low noise figure: 4 dB at 1.6 GHz
3 dB bandwidth: 2 GHz
Hermetically sealed package
ESD: Electrostatic discharge sensitive device, observe handling precautions!
Type
Ordering Code Circuit Diagram (Pin Configuration)
CGY 31 Q68000-A6887
TO-12
1
2
3
4
1)
RF output, VS
Interstage, VS
RF input
RF and DC
ground, case
For detailed information see chapter Package Outlines.
Semiconductor Group
Package1)
1
CGY 31
Maximum Ratings
Parameter
Symbol
Values
Unit
Supply voltage, TC ≤ 80 ˚C
VS
6
V
Total power dissipation, TC ≤ 50 ˚C
Ptot
2
W
Channel temperature
Tch
150
˚C
Storage temperature range
Tstg
– 55 … + 150
RthchC
50
Thermal Resistance
Channel - case
K/W
Note: Exceeding any of the maximum ratings may cause permanent damage to the device.
Appropriate handling procedures are required to protect the electrostatic sensitive IC
against degradation due to excess voltage or excess current spikes. Excellent ground
connection of lead 4 and the package (e. g. soldered on microstripline laminate) is
required to achieve guaranteed RF performance and stable operation conditions and
provides adequate heat sink. Low parasitic capacitance of the bias network to port 2
gives optimum gain and flatness. Input and output connections must be DC isolated by
coupling capacitors.
Semiconductor Group
2
CGY 31
Electrical Characteristics
at TA = 25 ˚C, VS = 4.5 V, RS = RL = 50 Ω , unless otherwise specified,
(for application circuit see next page).
Parameter
Symbol
Values
Unit
min.
typ.
max.
Operating current
Iop
–
160
200
mA
Power gain
f = 800 MHz to 1800 MHz
G
15
18
–
dB
Gain flatness
f = 800 MHz to 1800 MHz
∆G
–
2.0
2.5
Noise figure
f = 800 MHz to 1800 MHz
F
–
4.0
5.0
Input return loss
f = 800 MHz to 1800 MHz
RLIN
–
13
9.5
Output return loss
f = 800 MHz to 1800 MHz
RLOUT
–
12
9.5
Third order intercept point
two-tone intermodulation test
f1= 806 MHz, f2= 810 MHz,
Po = 10 dBm (both carriers)
IP3
31
32.5
–
1 dB gain compression
f = 800 MHz to 1800 MHz
P1dB
–
19
–
Semiconductor Group
3
dBm
CGY 31
Application Circuit
f = 800 MHz to 1800 MHz
Legend of components
C1, C2, C3
: 100 pF
: 1 nF
R1
L1
39 Ω
70 nH
Resistor, e.g. l = 4 mm; ∅1.8 mm with axial leads
Inductance, e.g. 8 turns, 0.25 mm enamelled copper wire
wound on R. The geometrical combination of L1 and R
influences the frequency response.
L2
40 nH
Inductance, e.g. 5 turns, 0.25 enamelled copper wire
wound on M3-nylon rod.
D
6V2
Zener diode, 1.3 W (type BZW 22 C 6 V 2).
Chip capacitors
Note: For lower frequencies (f = 100 … 900 MHz) the performance of CGY 31 is comparable
to that of CGY 21, if an interstage circuit with L1 = 1 µH is connected.
Semiconductor Group
4
CGY 31
Total power dissipation Ptot = f (TC)
Max. supply voltage VSmax = f (TC)
Operating current Iop = f (VS)
Semiconductor Group
5
CGY 31
Power gain G = f (f)
VS = 4.5 V, RS = RL = 50 Ω
Power gain G = f (VS)
RS = RL = 50 Ω
Power output G = f (Pout)
VS = 4.5 V, RS = RL = 50 Ω
f = 0.8 GHz
Semiconductor Group
6
CGY 31
Third order intercept point IP3 = f (VS)
f = 0.8 GHz, RS = RL = 50 Ω
The intermodulation ratio dIM can easily be
determined.
dIM = 2 (IP3 – P0)
IP3 = Intercept point
dIM = Intermodulation ratio
P0 = Power level of each carrier in dBm
Noise figure F = f (VS)
RS = RL = 50 Ω
Noise figure F = f (f)
VS = 4.5 V, RS = RL = 50 Ω
Semiconductor Group
7
CGY 31
S Parameters
f
S11
GHz
MAG
S21
ANG
S12
S22
MAG
ANG
MAG
ANG
MAG
ANG
7.77
8.93
9.04
9.16
9.15
8.99
8.62
8.15
7.52
6.80
6.06
5.45
4.81
4.15
3.43
2.68
23
– 12
– 34
– 52
– 71
– 90
– 109
– 127
– 145
– 162
– 179
165
150
135
121
110
0.007
0.008
0.008
0.009
0.009
0.010
0.010
0.011
0.011
0.011
0.012
0.011
0.012
0.012
0.012
0.014
31
21
21
22
28
27
29
30
29
32
33
35
36
36
41
40
0.25
0.21
0.21
0.22
0.23
0.24
0.25
0.27
0.30
0.33
0.35
0.36
0.36
0.35
0.34
0.33
– 19
– 20
– 23
– 30
– 34
– 36
– 35
– 31
– 26
– 22
– 17
– 13
– 11
– 10
– 13
– 20
VS = 4.5 V, Z0 = 50 Ω
0.1
0.3
0.5
0.7
0.9
1.1
1.3
1.5
1.7
1.9
2.1
2.3
2.5
2.7
2.9
3.1
0.42
0.28
0.26
0.25
0.24
0.24
0.23
0.22
0.19
0.16
0.12
0.06
0.02
0.06
0.11
0.15
– 35
– 42
– 51
– 64
– 72
– 76
– 78
– 77
– 73
– 71
– 66
– 56
– 8
107
108
111
S11 = f (f)
VS = 4.5 V, Z0 = 50 Ω
Semiconductor Group
S12 = f (f)
VS = 4.5 V, Z0 = 50 Ω
8
CGY 31
S Parameters (continued)
S21 = f (f)
VS = 4.5 V, Z0 = 50 Ω
Semiconductor Group
S22 = f (f)
VS = 4.5 V, Z0 = 50 Ω
9