BF 517 NPN Silicon RF Transistor 3 For amplifier and oscillator applications in TV-tuners 2 1 Type Marking BF 517 LRs Pin Configuration 1=B 2=E VPS05161 Package 3=C SOT-23 Maximum Ratings Parameter Symbol Value Unit Collector-emitter voltage VCEO 15 Collector-base voltage VCBO 20 Emitter-base voltage VEBO 2.5 Collector current IC 25 Peak collector current, f 10 MHz ICM 50 Total power dissipation, TS 55 °C F) Ptot 280 mW Junction temperature Tj 150 °C Ambient temperature TA -65 ... 150 Storage temperature Tstg -65 ... 150 V mA Thermal Resistance RthJS Junction - soldering point 340 K/W 1T is measured on the collector lead at the soldering point to the pcb S 1 Oct-26-1999 BF 517 Electrical Characteristics at TA = 25 °C, unless otherwise specified. Parameter Symbol Values Unit min. typ. max. 15 - - V ICBO - - 50 nA hFE 25 - 250 - VCEsat - 0.1 0.5 V fT 1 2 - Ccb 0.3 0.55 0.75 Cce - 0.25 0.4 Cibo - 1.45 - Cobs - 0.8 - F - 2.5 - DC characteristics Collector-emitter breakdown voltage V(BR)CEO IC = 1 mA, IB = 0 Collector-base cutoff current VCB = 15 V, IE = 0 DC current gain IC = 5 mA, VCE = 10 V Collector-emitter saturation voltage IC = 10 mA, IB = 1 mA AC characteristics Transition frequency GHz IC = 5 mA, VCE = 10 V, f = 200 MHz Collector-base capacitance pF VCB = 5 V, f = 1 MHz Collector-emitter capacitance VCE = 5 V, f = 1 MHz Input capacitance VEB = 0.5 V, IC = 0 , f = 1 MHz Output capacitance VCE = 5 V, VBE = 0 , f = 1 MHz Noise figure dB IC = 5 mA, VCE = 10 V, f = 100 MHz, ZS = 75 2 Oct-26-1999 BF 517 Total power dissipation Ptot = f (TA *, TS ) * Package mounted on epoxy 300 mW P tot TS 200 TA 150 100 50 0 0 20 40 60 80 120 °C 100 150 TA,TS Permissible Pulse Load RthJS = f (tp ) Permissible Pulse Load Ptotmax/P totDC = f (tp) 10 3 10 3 Ptotmax / PtotDC K/W RthJS 10 2 - D=0 0.005 0.01 0.02 0.05 0.1 0.2 0.5 10 2 10 1 0.5 0.2 0.1 0.05 0.02 0.01 0.005 D=0 10 0 10 -1 -6 10 10 -5 10 -4 10 -3 10 10 1 -2 s 10 10 0 -6 10 0 tp 10 -5 10 -4 10 -3 10 -2 s 10 0 tp 3 Oct-26-1999 BF 517 Collector-base capacitance Ccb = f (VCB ) Transition frequency f T = f (I C) f = 1MHz V CE = Parameter 1.3 3.0 pF 1.1 10V GHz 5V 3V 0.9 2.0 fT Ccb 1.0 0.8 2V 0.7 1.5 0.6 0.5 1.0 0.4 0.3 1V 0.5 0.2 0.7V 0.1 0.0 0 4 8 12 16 20 V 0.0 0 26 VCB 5 10 15 20 mA 30 IC 4 Oct-26-1999