BFG 193 NPN Silicon RF Transistor • For low noise, high-gain amplifiers up to 2GHz • For linear broadband amplifiers • fT = 8GHz F = 1.3dB at 900MHz ESD: Electrostatic discharge sensitive device, observe handling precaution! Type Marking Ordering Code Pin Configuration Package BFG 193 SOT-223 BFG193 Q62702-F1291 1=E 2=B 3=E 4=C Maximum Ratings Parameter Symbol Collector-emitter voltage VCEO 12 Collector-emitter voltage VCES 20 Collector-base voltage VCBO 20 Emitter-base voltage VEBO 2 Collector current IC 80 Base current IB 10 Total power dissipation Ptot TS ≤ 87 °C Values Unit V mA mW 600 Junction temperature Tj Ambient temperature TA - 65 ... + 150 Storage temperature Tstg - 65 ... + 150 150 °C Thermal Resistance Junction - soldering point 1) RthJS ≤ 105 K/W 1) TS is measured on the collector lead at the soldering point to the pcb. Semiconductor Group 1 Dec-13-1996 BFG 193 Electrical Characteristics at TA = 25°C, unless otherwise specified. Parameter Symbol Values min. typ. Unit max. DC Characteristics Collector-emitter breakdown voltage V(BR)CEO IC = 1 mA, IB = 0 Collector-emitter cutoff current 12 100 nA - - 100 IEBO µA - - 1 hFE IC = 30 mA, VCE = 8 V Semiconductor Group - ICBO VEB = 1 V, IC = 0 DC current gain µA - VCB = 10 V, IE = 0 Emitter-base cutoff current - ICES VCE = 20 V, VBE = 0 Collector-base cutoff current V 50 2 100 200 Dec-13-1996 BFG 193 Electrical Characteristics at TA = 25°C, unless otherwise specified. Parameter Symbol Values min. typ. Unit max. AC Characteristics Transition frequency fT IC = 50 mA, VCE = 8 V, f = 500 MHz Collector-base capacitance 6 pF - 0.6 0.9 - 0.4 - - 2 - Cce VCE = 10 V, f = 1 MHz Emitter-base capacitance 8 Ccb VCB = 10 V, f = 1 MHz Collector-emitter capacitance GHz Ceb VEB = 0.5 V, f = 1 MHz F Noise figure dB IC = 10 mA, VCE = 8 V, ZS = ZSopt f = 900 MHz - 1.3 - f = 1.8 GHz - 2.1 - f = 900 MHz - 15.5 - f = 1.8 GHz - 10 - f = 900 MHz - 13.5 - f = 1.8 GHz - 8 - Power gain 2) Gma IC = 30 mA, VCE = 8 V, ZS = ZSopt ZL = ZLopt Transducer gain |S21e|2 IC = 30 mA, VCE = 8 V, ZS =ZL= 50 Ω 2) Gma = |S21/S12| (k-(k2-1)1/2) Semiconductor Group 3 Dec-13-1996 BFG 193 Total power dissipation Ptot = f (TA*, TS) * Package mounted on epoxy 700 mW 600 Ptot 550 TS 500 450 400 350 300 TA 250 200 150 100 50 0 0 20 40 60 80 100 120 °C 150 TA ,TS Permissible Pulse Load RthJS = f (tp) Permissible Pulse Load Ptotmax/PtotDC = f (tp) 10 2 10 3 K/W RthJS Ptotmax/PtotDC D=0 0.005 0.01 0.02 0.05 0.1 0.2 0.5 10 2 10 1 0.5 0.2 0.1 0.05 0.02 0.01 0.005 D=0 10 1 10 0 -7 10 10 -6 10 -5 10 Semiconductor Group -4 10 -3 10 -2 -1 10 s 10 tp 0 4 10 0 -7 10 10 -6 10 -5 10 -4 10 -3 10 -2 -1 10 s 10 tp 0 Dec-13-1996 BFG 193 Collector-base capacitance Ccb = f (VCB) VBE = vbe = 0, f = 1MHz Transition frequency fT = f (IC) VCE = Parameter 1.1 9.0 pF Ccb 10V GHz 0.9 fT 7.0 5V 0.8 6.0 0.7 0.6 5.0 0.5 4.0 0.4 3V 2V 3.0 0.3 1V 2.0 0.7V 0.2 1.0 0.1 0.0 0.0 0 4 8 12 16 V VR 22 0 10 20 30 40 50 Power Gain Gma, Gms = f(IC) Power Gain Gma, Gms = f(IC) f = 0.9GHz f = 1.8GHz VCE = Parameter VCE = Parameter 20 60 70 mA IC 90 12 10V dB 5V dB G G 10V 16 3V 5V 8 3V 14 2V 2V 12 6 10 4 8 1V 1V 2 6 0.7V 0.7V 4 0 0 10 20 Semiconductor Group 30 40 50 60 70 mA IC 90 0 5 10 20 30 40 50 60 70 mA IC 90 Dec-13-1996 BFG 193 Power Gain Gma, Gms = f(VCE):_____ |S21 |2 Intermodulation Intercept Point IP3=f(IC) = f(VCE):--------- (3rd order, Output, ZS=ZL=50Ω) f = Parameter VCE = Parameter, f = 900MHz 35 18 IC=30mA 0.9GHz dB G 8V 0.9GHz 14 IP3 dBm 5V 12 1.8GHz 25 3V 10 1.8GHz 8 2V 20 6 4 15 1V 2 0 0 2 4 6 8 V 10 0 12 10 20 30 40 50 60 VR Power Gain Gma, Gms = f(f) Power Gain |S21|2= f(f) VCE = Parameter VCE = Parameter 35 mA IC 80 32 IC=30mA dB IC=30mA dB G S21 26 25 22 20 18 14 15 10 10 6 10V 2V 1V 5 2 0.7V 0 0.0 0.5 1.0 Semiconductor Group 1.5 2.0 2.5 GHz f 10V 2V 1V -2 0.0 3.5 6 0.7V 0.5 1.0 1.5 2.0 2.5 GHz f 3.5 Dec-13-1996