SIPMOS Small-Signal Transistor SP 0610L ● VDS − 60 V ● ID − 0.18 A ● RDS(on) 10 Ω ● P channel ● Enhancement mode 2 3 1 Type Ordering Code Tape and Reel Information SP 0610 L Q67000-S065 Pin Configuration Marking bulk 1 2 3 D G S Package SP0610L TO-92 Maximum Ratings Parameter Symbol Values Unit Drain-source voltage VDS − 60 V Drain-gate voltage, RGS = 20 kΩ VDGR − 60 Gate-source voltage VGS ± 20 Continuous drain current, TA = 25 ˚C ID − 0.18 A Pulsed drain current, TA = 25 ˚C ID puls − 0.72 Max. power dissipation, TA = 25 ˚C Ptot 0.63 W Operating and storage temperature range Tj, Tstg − 55 … + 150 ˚C Thermal resistance, chip-ambient (without heat sink) RthJA ≤ 200 K/W RthJSR – DIN humidity category, DIN 40 040 – E IEC climatic category, DIN IEC 68-1 – 55/150/56 – SP 0610L Electrical Characteristics at Tj = 25 ˚C, unless otherwise specified. Parameter Symbol Values min. typ. Unit max. Static Characteristics Drain-source breakdown voltage VGS = 0, ID = 0.25 mA V(BR)DSS Gate threshold voltage VGS = VDS, ID = 1 mA VGS(th) Zero gate voltage drain current VDS = − 60 V, VGS = 0 Tj = 25 ˚C IDSS Gate-source leakage current VGS = − 20 V, VDS = 0 IGSS Drain-source on-resistance VGS = − 10 V, ID = − 0.5 A RDS(on) V − 60 – – − 1.0 − 1.5 − 2.0 µA – − 0.1 −1 nA – −1 − 10 Ω – 7 10 0.08 0.13 – Dynamic Characteristics Forward transconductance VDS ≥ 2 × ID × RDS(on)max, ID = − 0.5 A gfs Input capacitance VGS = 0, VDS = − 25 V, f = 1 MHz Ciss Output capacitance VGS = 0, VDS = − 25 V, f = 1 MHz Coss Reverse transfer capacitance VGS = 0, VDS = − 25 V, f = 1 MHz Crss Turn-on time ton, (ton = td(on) + tr) VDD = − 30 V, VGS = −10 V, RGS = 50 Ω, ID = − 0.27 A Turn-off time toff, (toff = td(off) + tf) VDD = − 30 V, VGS = −10 V, RGS = 50 Ω, ID = − 0.27 A S pF – 30 40 – 17 25 – 8 12 td(on) – 7 10 tr – 12 18 td(off) – 10 13 tf – 20 27 ns SP 0610L Electrical Characteristics (cont’d) at Tj = 25 ˚C, unless otherwise specified. Parameter Symbol Values min. typ. Unit max. Reverse Diode Continuous reverse drain current TA = 25 ˚C IS Pulsed reverse drain current TA = 25 ˚C ISM Diode forward on-voltage VSD IF = − 0.18 A, VGS = 0 Package Outline TO-92 Dimensions in mm A – – − 0.18 – – − 0.72 – − 0.85 − 1.2 V SP 0610L Characteristics at Tj = 25 ˚C, unless otherwise specified. Total power dissipation Ptot = f (TA) Safe operating area ID = f (VDS) parameter: D = 0.01, TC = 25 ˚C Typ. output characteristics ID = f (VDS) parameter: tp = 80 µs Typ. drain-source on-resistance RDS(on) = f (ID) parameter: VGS SP 0610L Typ. transfer characteristics ID = f (VGS) parameter: tp = 80 µs, VDS ≥ 2 × ID × RDS(on)max. Typ. forward transconductance gfs = f (ID) parameter: VDS ≥ 2 × ID × RDS(on)max., tp = 80 µs Drain-source on-resistance RDS(on) = f (Tj) parameter: ID = 0.5 A, VGS = 10 V, (spread) Typ. capacitances C = f (VDS) parameter: VGS = 0, f = 1 MHz SP 0610L Gate threshold voltage VGS(th) = f (Tj) parameter: VDS = VGS, ID = 1 mA, (spread) Forward characteristics of reverse diode IF = f (VSD) parameter: tp = 80 µs, Tj, (spread) Drain current ID = f (TA) parameter: VGS ≥ 10 V Drain-source breakdown voltage V(BR) DSS = b × V(BR)DSS (25 ˚C)