SMD Type Product specification BSS670S2L Product Summary Feature VDS •N-Channel 55 V •Enhancement mode RDS(on) 650 mΩ •Logic Level ID 0.54 A SOT 23 Drain pin 3 Type Package Ordering Code Marking BSS670S2L SOT 23 Q67042-S4052 BSs Gate pin1 Source pin 2 Maximum Ratings, at Tj = 25 °C, unless otherwise specified Parameter Symbol Continuous drain current ID Value A TA=25°C 0.54 TA=70°C 0.43 Pulsed drain current ID puls Unit 2.2 TA=25°C Gate source voltage VGS ± 20 V Power dissipation Ptot 0.36 W TA=25°C Operating and storage temperature Tj , Tstg IEC climatic category; DIN IEC 68-1 http://www.twtysemi.com -55... +150 °C 55/150/56 [email protected] 4008-318-123 1 of 3 SMD Type Product specification BSS670S2L Thermal Characteristics Parameter Symbol Values Unit min. typ. max. - - 290 @ min. footprint - - 350 @ 6 cm2 cooling area 1) - - 300 Characteristics Thermal resistance, junction - soldering point RthJS K/W (Pin 3) SMD version, device on PCB: RthJA Electrical Characteristics, at Tj = 25 °C, unless otherwise specified Parameter Symbol Values Unit min. typ. max. V(BR)DSS 55 - - VGS(th) 1.2 1.6 2 Static Characteristics Drain-source breakdown voltage V VGS=0, ID=1mA Gate threshold voltage, V GS = VDS ID=2.7µA Zero gate voltage drain current µA IDSS VDS=55V, V GS=0, T j=25°C - 0.01 1 VDS=55V, V GS=0, T j=150°C - 10 100 IGSS - 1 100 nA RDS(on) - 430 825 mΩ RDS(on) - 346 650 Gate-source leakage current VGS=20V, VDS=0V Drain-source on-state resistance VGS=4.5V, ID=270mA Drain-source on-state resistance VGS=10V, ID=270mA http://www.twtysemi.com [email protected] 4008-318-123 2 of 3 SMD Type Product specification BSS670S2L Electrical Characteristics Parameter Symbol Conditions Values Unit min. typ. max. 0.6 1.2 - S pF Dynamic Characteristics Transconductance gfs VDS≥2*ID*RDS(on)max , ID=0.54A Input capacitance Ciss VGS=0, VDS =25V, - 56 75 Output capacitance Coss f=1MHz - 13 18 Reverse transfer capacitance Crss - 7 10 Turn-on delay time t d(on) VDD=30V, VGS=4.5V, - 9 14 Rise time tr ID=0.54A, - 25 37 - 21 31 - 24 32 - 0.19 0.25 - 0.57 0.86 - 1.7 2.26 Turn-off delay time t d(off) Fall time tf RG =130Ω ns Gate Charge Characteristics Gate to source charge Q gs Gate to drain charge Q gd Gate charge total Qg VDD=40V, ID=0.54A VDD=40V, ID=0.54A, nC VGS=0 to 10V Gate plateau voltage V(plateau) VDD=40V, ID=0.54A - 3.1 - V IS TA=25°C - - 0.38 A - - 2.2 Reverse Diode Inverse diode continuous forward current Inv. diode direct current, pulsed ISM Inverse diode forward voltage VSD VGS =0, IF =0.54A - 0.8 1.1 V Reverse recovery time trr VR =30V, IF =lS , - 51 64 ns Reverse recovery charge Qrr diF /dt=100A/µs - 22 28 nC http://www.twtysemi.com [email protected] 4008-318-123 3 of 3