SIPMOS Small-Signal Transistor ● ● ● ● ● ● ● BSP 135 VDS 600 V ID 0.100 A RDS(on) 60 Ω N channel Depletion mode High dynamic resistance Available grouped in VGS(th) Type Ordering Code Tape and Reel Information Pin Configuration Marking Package BSP 135 Q62702-S655 E6327: 1000 pcs/reel 1 2 3 4 G D S D BSP 135 SOT-223 BSP 135 Q67000-S283 E6906: 1000 pcs/reel VGS(th) selected in groups: (see page 219) Maximum Ratings Parameter Symbol Values Unit Drain-source voltage VDS 600 V Drain-gate voltage, RGS = 20 kΩ VDGR 600 Gate-source voltage VGS ± 14 Gate-source peak voltage, aperiodic Vgs ± 20 Continuous drain current, TA = 44 ˚C ID 0.100 A Pulsed drain current, TA = 25 ˚C ID puls 0.30 Max. power dissipation, TA = 25 ˚C Ptot 1.7 W Operating and storage temperature range Tj, Tstg – 55 … + 150 ˚C Thermal resistance 1) chip-ambient chip-soldering point RthJS RthJA RthJS 72 12 K/W DIN humidity category, DIN 40 040 – E – IEC climatic category, DIN IEC 68-1 – 55/150/56 1) Transistor on epoxy pcb 40 mm × 40 mm × 1.5 mm with 6 cm2 copper area for drain connection. Semiconductor Group 1 09.96 BSP 135 Electrical Characteristics at Tj = 25 ˚C, unless otherwise specified. Parameter Symbol Values Unit min. typ. max. 600 – – − 1.8 − 1.5 − 0.7 – – – – 100 200 – 10 100 – 40 60 0.01 0.04 – Static Characteristics Drain-source breakdown voltage VGS = − 3 V, ID = 0.25 mA V(BR)DSS Gate threshold voltage VDS = 3 V, ID = 1 mA VGS(th) Drain-source cutoff current VDS = 600 V, VGS = − 3 V Tj = 25 ˚C Tj = 125 ˚C IDSS Gate-source leakage current VGS = 20 V, VDS = 0 IGSS Drain-source on-resistance VGS = 0 V, ID = 0.01 A RDS(on) V nA µA nA Ω Dynamic Characteristics Forward transconductance VDS ≥ 2 × ID × RDS(on)max, ID = 0.01 A gfs Input capacitance VGS = − 3 V, VDS = 25 V, f = 1 MHz Ciss Output capacitance VGS = − 3 V, VDS = 25 V, f = 1 MHz Coss Reverse transfer capacitance VGS = − 3 V, VDS = 25 V, f = 1 MHz Crss Turn-on time ton, (ton = td(on) + tr) S pF – 110 150 – 8 12 – 3 5 td(on) – 4 6 VDD = 30 V, VGS = − 3 V ... + 5 V, RGS = 50 Ω, ID = 0.2 A tr – 10 15 Turn-off time toff, (toff = td(off) + tf) td(off) – 15 20 VDD = 30 V, VGS = − 3 V ... + 5 V, RGS = 50 Ω, ID = 0.2 A tf – 20 30 Semiconductor Group 2 ns BSP 135 Electrical Characteristics (cont’d) at Tj = 25 ˚C, unless otherwise specified. Parameter Symbol Values Unit min. typ. max. – – 0.100 – – 0.300 Reverse Diode Continuous reverse drain current TA = 25 ˚C IS Pulsed reverse drain current TA = 25 ˚C ISM Diode forward on-voltage IF = 0.2 A, VGS = 0 VSD VGS(th) Grouping Symbol ∆VGS(th) Range of VGS(th) Threshold voltage selected in groups P R S T U V W A 1): – 0.90 Limit Values Unit Test Condition – min. max. – 0.15 V – 0.95 – 1.08 – 1.21 – 1.34 – 1.47 – 1.60 – 1.73 – 0.80 – 0.93 – 1.06 – 1.19 – 1.32 – 1.45 – 1.58 V V V V V V V VGS(th) 1) A specific group cannot be ordered separately. Each reel only contains transistors from one group. Package Outline SOT-223 Dimensions in mm Semiconductor Group V 3 1.30 VDS1 = 0.2 V; VDS2 = 3 V; ID = 1 mA BSP 135 Characteristics at Tj = 25 ˚C, unless otherwise specified Total power dissipation Ptot = f (TA) Safe operating area ID = f (VDS) parameter: D = 0.01, TC = 25 ˚C Typ. output characteristics ID = f (VDS) parameter: tp = 80 µs Typ. drain-source on-resistance RDS(on) = f (ID) parameter: VGS Semiconductor Group 4 BSP 135 Typ. transfer characteristics ID = f (VGS) parameter: tp = 80 µs, VDS ≥ 2 × ID × RDS(on)max. Typ. forward transconductance gfs = f (ID) parameter: VDS ≥ 2 × ID × RDS(on)max., tp = 80 µs Drain-source on-resistance RDS(on) = f (Tj) parameter: ID = 0.01 A, VGS = 0 V, (spread) Typ. capacitances C = f (VDS) parameter: VGS = 0, f = 1 MHz Semiconductor Group 5 BSP 135 Gate threshold voltage VGS(th) = f (Tj) parameter: VDS = 3 V, ID = 1 mA, (spread) Forward characteristics of reverse diode IF = f (VSD) parameter: tp = 80 µs, Tj, (spread) Drain current ID = f (TA) parameter: VGS ≥ 3 V Transient thermal impedance ZthJA = f (tp) parameter: D = tp / T Semiconductor Group 6 BSP 135 Safe operating area ID = f (VDS) parameter: D = 0, TC = 25 ˚C Drain-source breakdown voltage V(BR) DSS = b × V(BR)DSS (25 ˚C) Semiconductor Group 7