SMD Type Product specification BSS7728N SIPMOS Small-Signal-Transistor Feature Product Summary • N-Channel VDS 60 V • Enhancement mode RDS(on) 5 Ω • Logic Level ID 0.2 A • dv/dt rated SOT-23 Drain pin 3 Gate pin1 Source pin 2 Type Package BSS7728N SOT-23 Ordering Code Tape and Reel Information Marking Q67042-S4189 E6327: 3000 pcs/reel sSK Maximum Ratings, at Tj = 25 °C, unless otherwise specified Parameter Symbol Continuous drain current ID Value Unit A TA=25°C 0.2 TA=70°C 0.16 I D puls 0.8 dv/dt 6 Gate source voltage VGS ±20 V Power dissipation Ptot 0.36 W -55... +150 °C Pulsed drain current TA=25°C Reverse diode dv/dt kV/µs IS=0.2A, VDS=48V, di/dt=200A/µs, Tjmax=150°C TA=25°C Operating and storage temperature IEC climatic category; DIN IEC 68-1 http://www.twtysemi.com [email protected] T j , Tstg 55/150/56 4008-318-123 1 of 3 SMD Type Product specification BSS7728N Thermal Characteristics Parameter Symbol Values Unit min. typ. max. - - 350 Characteristics Thermal resistance, junction - ambient RthJA K/W at minimal footprint Electrical Characteristics, at Tj = 25 °C, unless otherwise specified Parameter Symbol Values Unit min. typ. max. V(BR)DSS 60 - - VGS(th) 1.3 1.9 2.3 Static Characteristics Drain-source breakdown voltage V VGS=0, ID=250µA Gate threshold voltage, V GS = VDS ID=26µA Zero gate voltage drain current µA I DSS VDS=60V, VGS =0, Tj=25°C - - 0.1 VDS=60V, VGS =0, Tj=150°C - - 5 I GSS - 1 10 nA RDS(on) - 4.3 7.5 Ω RDS(on) - 2.7 5 Gate-source leakage current VGS=20V, VDS=0 Drain-source on-state resistance VGS=4.5V, ID=0.05A Drain-source on-state resistance VGS=10V, ID=0.5A http://www.twtysemi.com [email protected] 4008-318-123 2 of 3 SMD Type Product specification BSS7728N Electrical Characteristics, at Tj = 25 °C, unless otherwise specified Parameter Symbol Conditions Values Unit min. typ. max. 0.1 0.2 - S pF Dynamic Characteristics Transconductance gfs VDS≥2*ID*RDS(on)max, ID=0.16A Input capacitance Ciss VGS=0, VDS=25V, - 37 56 Output capacitance Coss f=1MHz - 7.3 11 Reverse transfer capacitance Crss - 2.9 4.4 Turn-on delay time td(on) VDD=30V, VGS=10V, - 2.7 4 Rise time tr ID=0.2A, RG=6Ω - 2.7 4.1 Turn-off delay time td(off) - 6.1 9.1 Fall time tf - 9 13 - 0.12 0.18 - 0.43 0.65 - 1 1.5 V(plateau) VDD =48V, ID = 0.2 A - 3.8 - V IS - - 0.2 A - - 0.8 ns Gate Charge Characteristics Gate to source charge Q gs Gate to drain charge Q gd Gate charge total Qg VDD =48V, ID =0.2A VDD =48V, ID =0.2A, nC VGS =0 to 10V Gate plateau voltage Reverse Diode Inverse diode continuous TA=25°C forward current Inv. diode direct current, pulsedISM Inverse diode forward voltage VSD VGS=0, IF=IS - 0.84 1.2 V Reverse recovery time trr VR=30V, IF =lS , - 11.5 17.5 ns Reverse recovery charge Qrr diF/dt=100A/µs - 2.6 4 nC http://www.twtysemi.com [email protected] 4008-318-123 3 of 3