BUZ 110S SIPMOS Power Transistor Features Product Summary • N channel Drain source voltage VDS • Drain-Source on-state resistance RDS(on) Continuous drain current ID Enhancement mode • Avalanche rated 55 V 0.01 Ω 80 A • dv/dt rated • 175 ˚C operating temperature Type Package Ordering Code Packaging BUZ110S P-TO220-3-1 Q67040-S4005-A2 Tube BUZ110S E3045A P-TO263-3-2 Q67040-S4005-A6 Tape and Reel BUZ110S E3045 P-TO263-3-2 Q67040-S4005-A5 Tube Pin 1 Pin 2 Pin 3 G D S Maximum Ratings, at Tj = 25 ˚C unless otherwise specified Parameter Symbol Continuous drain current ID Value A TC = 25 ˚C, limited by bond wire 80 TC = 100˚C 66 Pulsed drain current Unit IDpulse 320 EAS 460 EAR 20 dv/dt 6 Gate source voltage VGS ±20 V Power dissipation Ptot 200 W -55... +175 ˚C TC = 25 ˚C Avalanche energy, single pulse mJ ID = 80 A, VDD = 25 V, RGS = 25 Ω Avalanche energy, periodic limited by Tjmax Reverse diode dv/dt kV/µs IS = 80 A, VDS = 40 V, di/dt = 200 A/µs, Tjmax = 175 ˚C TC = 25 ˚C Operating and storage temperature T j , Tstg IEC climatic category; DIN IEC 68-1 Data Book 55/175/56 1 05.99 BUZ 110S Thermal Characteristics Symbol Parameter Values Unit min. typ. max. Characteristics Thermal resistance, junction - case RthJC - - 0.75 Thermal resistance, junction - ambient, leded RthJA - - 62 SMD version, device on PCB: RthJA @ min. footprint - - 62 @ 6 cm 2 cooling area1) - - 40 K/W Electrical Characteristics, at Tj = 25 ˚C, unless otherwise specified Parameter Symbol Values Unit min. typ. max. V(BR)DSS 55 - - Gate threshold voltage, VGS = VDS ID = 200 µA VGS(th) 2.1 3 4 Zero gate voltage drain current I DSS Static Characteristics Drain- source breakdown voltage V VGS = 0 V, ID = 0.25 mA µA VDS = 50 V, VGS = 0 V, T j = 25 ˚C - 0.1 1 VDS = 50 V, VGS = 0 V, T j = 150 ˚C - - 100 - 10 100 Gate-source leakage current I GSS nA VGS = 20 V, VDS = 0 V Drain-Source on-state resistance Ω RDS(on) VGS = 10 V, ID = 66 A - 0.009 0.01 1 Device on 40mm*40mm*1.5mm epoxy PCB FR4 with 6 cm2 (one layer, 70µm thick) copper area for drain connection. PCB is vertical without blown air. Data Book 2 05.99 BUZ 110S Electrical Characteristics, at Tj = 25 ˚C, unless otherwise specified Parameter Symbol Values Unit min. typ. max. g fs 30 49 - S Ciss - 2420 3025 pF Coss - 745 930 Crss - 380 475 t d(on) - 20 30 tr - 35 55 t d(off) - 45 70 tf - 30 45 Dynamic Characteristics Transconductance VDS≥2*ID*RDS(on)max , ID = 66 A Input capacitance VGS = 0 V, VDS = 25 V, f = 1 MHz Output capacitance VGS = 0 V, VDS = 25 V, f = 1 MHz Reverse transfer capacitance VGS = 0 V, VDS = 25 V, f = 1 MHz Turn-on delay time ns VDD = 30 V, V GS = 10 V, ID = 80 A, RG = 3.9 Ω Rise time VDD = 30 V, V GS = 10 V, ID = 80 A, RG = 3.9 Ω Turn-off delay time VDD = 30 V, V GS = 10 V, ID = 80 A, RG = 3.9 Ω Fall time VDD = 30 V, V GS = 10 V, ID = 80 A, RG = 3.9 Ω Data Book 3 05.99 BUZ 110S Electrical Characteristics, at Tj = 25 ˚C, unless otherwise specified Symbol Parameter Values Unit min. typ. max. Q gs - 17 26 Q gd - 41 61.5 Qg - 85 130 V(plateau) - 5.8 - V IS - - 80 A I SM - - 320 VSD - 1.3 2 V t rr - 80 120 ns Q rr - 0.17 0.25 µC Dynamic Characteristics Gate to source charge nC VDD = 40 V, ID = 80 A Gate to drain charge VDD = 40 V, ID = 80 A Gate charge total VDD = 40 V, ID = 80 A, VGS = 0 to 10 V Gate plateau voltage VDD = 40 V, ID = 80 A Reverse Diode Inverse diode continuous forward current TC = 25 ˚C Inverse diode direct current,pulsed TC = 25 ˚C Inverse diode forward voltage VGS = 0 V, I F = 160 A Reverse recovery time VR = 30 V, IF=IS , diF/dt = 100 A/µs Reverse recovery charge VR = 30 V, IF=l S , diF/dt = 100 A/µs Data Book 4 05.99 BUZ 110S Power Dissipation Drain current Ptot = f (TC) ID = f (TC ) parameter: VGS ≥ 10 V BUZ110S BUZ110S 220 90 W A 180 70 160 ID Ptot 60 140 120 50 100 40 80 30 60 20 40 10 20 0 0 20 40 60 80 0 0 100 120 140 160 ˚C 190 20 40 60 80 100 120 140 160 ˚C 190 TC TC Safe operating area Transient thermal impedance I D = f (V DS) ZthJC = f (tp ) parameter : D = 0 , T C = 25 ˚C parameter : D = tp /T 10 3 BUZ110S 10 1 BUZ110S K/W tp = 8.7µs 10 µs 10 0 DS (o n) ID = V DS 10 2 Z thJC /I D A 10 -1 R 100 µs D = 0.50 10 -2 10 1 0.20 0.10 1 ms 0.05 10 ms 0.02 10 -3 DC 0.01 single pulse 10 0 -1 10 10 0 10 1 V 10 10 -4 -7 10 2 VDS Data Book 10 -6 10 -5 10 -4 10 -3 10 -2 s 10 0 tp 5 05.99 BUZ 110S Typ. output characteristics Typ. drain-source-on-resistance I D = f (VDS) RDS(on) = f (ID) parameter: tp = 80 µs parameter: V GS BUZ110S 190 BUZ110S Ptot = 200W A 0.032 l c k j 160 d e f g h Ω i VGS [V] a 4.0 h 4.5 c 5.0 d 5.5 e 6.0 f 6.5 g 7.0 h 7.5 i 8.0 j 9.0 k 10.0 d l 20.0 ID g 120 100 f 80 e 60 0.024 RDS(on) b 140 0.020 0.016 i 0.012 j k 0.008 40 l c 20 0.004 VGS [V] = b c 5.0 a 0 0.0 0.5 1.0 1.5 2.0 2.5 3.0 3.5 4.0 V 5.0 0.000 0 VDS d 5.5 20 e f 6.0 6.5 40 60 g 7.0 h i 7.5 8.0 80 j 9.0 100 k l 10.0 20.0 140 A 170 120 ID Typ. transfer characteristics I D= f (VGS) parameter: tp = 80 µs Typ. forward transconductance VDS ≥ 2 x I D x RDS(on) max parameter: gfs gfs = f(ID ); Tj = 25˚C 80 55 S A 45 40 50 gfs ID 60 35 30 40 25 30 20 15 20 10 10 5 0 2.5 3.0 3.5 4.0 4.5 5.0 V 0 0 6.0 VGS Data Book 10 20 30 40 50 A 65 ID 6 05.99 BUZ 110S Gate threshold voltage Drain-source on-resistance VGS(th) = f (Tj) RDS(on) = f (Tj) parameter : VGS = V DS, ID = 200 µA parameter : ID = 66 A, VGS = 10 V BUZ110S 5.0 V 0.034 Ω 4.4 4.0 VGS(th) RDS(on) 0.028 0.024 0.020 3.6 3.2 2.8 max 2.4 0.016 98% typ 2.0 0.012 1.6 typ 1.2 0.008 0.8 0.004 0.000 -60 min 0.4 0.0 -60 -20 20 60 100 140 ˚C -20 20 60 100 140 200 ˚C 200 Tj Tj Typ. capacitances Forward characteristics of reverse diode C = f (VDS) IF = f (VSD ) parameter: V GS = 0 V, f = 1 MHz parameter: Tj , tp = 80 µs 10 4 10 3 BUZ110S A pF Ciss C IF 10 2 10 3 Coss 10 1 Crss Tj = 25 ˚C typ Tj = 175 ˚C typ Tj = 25 ˚C (98%) Tj = 175 ˚C (98%) 10 2 0 10 20 V 10 0 0.0 40 VDS Data Book 0.4 0.8 1.2 1.6 2.0 2.4 V 3.0 VSD 7 05.99 BUZ 110S Avalanche Energy EAS = f (Tj) Typ. gate charge parameter: ID = 80 A, V DD = 25 V RGS = 25 Ω VGS = f (QGate ) parameter: ID puls = 80 A BUZ110S 500 16 mJ V 400 12 VGS EAS 350 300 250 10 0,2 VDS max 0,8 VDS max 8 200 6 150 4 100 2 50 0 20 40 60 80 100 120 140 ˚C 0 0 180 Tj 20 40 60 80 100 nC 130 Q Gate Drain-source breakdown voltage V(BR)DSS = f (Tj) BUZ110S 66 V V(BR)DSS 64 62 60 58 56 54 52 50 -60 -20 20 60 100 140 ˚C 200 Tj Data Book 8 05.99