BUZ 111S SIPMOS Power Transistor Features Product Summary • N channel Drain source voltage VDS • Drain-Source on-state resistance RDS(on) 0.008 Ω Continuous drain current ID Enhancement mode • Avalanche rated 55 V 80 A • dv/dt rated • 175˚C operating temperature Type Package Ordering Code Packaging BUZ111S P-TO220-3-1 Q67040-S4003-A2 Tube BUZ111S E3045A P-TO263-3-2 Q67040-S4003-A6 Tape and Reel BUZ111S E3045 P-TO263-3-2 Q67040-S4003-A5 Tube Pin 1 G Pin 2 Pin 3 D S Maximum Ratings, at Tj = 25 ˚C, unless otherwise specified Parameter Symbol Continuous drain current ID Value A TC = 25 ˚C, 1) 80 TC = 100 ˚C 80 Pulsed drain current Unit IDpulse 320 EAS 700 EAR 30 dv/dt 6 Gate source voltage VGS ±20 V Power dissipation Ptot 300 W -55... +175 ˚C TC = 25 ˚C Avalanche energy, single pulse mJ ID = 80 A, VDD = 25 V, RGS = 25 Ω Avalanche energy, periodic limited by Tjmax Reverse diode dv/dt kV/µs IS = 80 A, VDS = 40 V, di/dt = 200 A/µs, Tjmax = 175 ˚C TC = 25 ˚C Operating and storage temperature T j , Tstg IEC climatic category; DIN IEC 68-1 Data Sheet 55/175/56 1 05.99 BUZ 111S Thermal Characteristics Symbol Parameter Values Unit min. typ. max. Characteristics Thermal resistance, junction - case RthJC - - 0.5 Thermal resistance, junction - ambient, leded RthJA - - 62 SMD version, device on PCB: RthJA @ min. footprint - - 62 @ 6 cm 2 cooling area2) - - 40 K/W Electrical Characteristics, at Tj = 25 ˚C, unless otherwise specified Parameter Symbol Values Unit min. typ. max. V(BR)DSS 55 - - Gate threshold voltage, VGS = VDS ID = 240 µA VGS(th) 2.1 3 4 Zero gate voltage drain current I DSS Static Characteristics Drain- source breakdown voltage V VGS = 0 V, ID = 0.25 mA µA VDS = 50 V, VGS = 0 V, T j = 25 ˚C - 0.1 1 VDS = 50 V, VGS = 0 V, T j = 150 ˚C - - 100 - 10 100 Gate-source leakage current I GSS nA VGS = 20 V, VDS = 0 V Drain-Source on-state resistance Ω RDS(on) VGS = 10 V, ID = 80 A - 0.0065 0.008 1current limited by bond wire 2 Device on 40mm*40mm*1.5mm epoxy PCB FR4 with 6 cm2 (one layer, 70µm thick) copper area for drain connection. PCB is vertical without blown air. Data Sheet 2 05.99 BUZ 111S Electrical Characteristics, at Tj = 25 ˚C, unless otherwise specified Symbol Parameter Values Unit min. typ. max. g fs 30 73 - S Ciss - 3600 4500 pF Coss - 1100 1375 Crss - 550 690 t d(on) - 25 37 tr - 30 45 t d(off) - 65 95 tf - 40 60 Dynamic Characteristics Transconductance VDS≥2*ID*RDS(on)max , ID = 80 A Input capacitance VGS = 0 V, VDS = 25 V, f = 1 MHz Output capacitance VGS = 0 V, VDS = 25 V, f = 1 MHz Reverse transfer capacitance VGS = 0 V, VDS = 25 V, f = 1 MHz Turn-on delay time ns VDD = 30 V, V GS = 10 V, ID = 80 A, RG = 2.4 Ω Rise time VDD = 30 V, V GS = 10 V, ID = 80 A, RG = 2.4 Ω Turn-off delay time VDD = 30 V, V GS = 10 V, ID = 80 A, RG = 2.4 Ω Fall time VDD = 30 V, V GS = 10 V, ID = 80 A, RG = 2.4 Ω Data Sheet 3 05.99 BUZ 111S Electrical Characteristics, at Tj = 25 ˚C, unless otherwise specified Parameter Symbol Values Unit min. typ. max. Q gs - 18 27 Q gd - 61 91.5 Qg - 125 185 V(plateau) - 5.45 - V IS - - 80 A I SM - - 320 VSD - 1.25 1.8 V t rr - 105 160 ns Q rr - 0.29 0.45 µC Dynamic Characteristics Gate to source charge nC VDD = 40 V, ID = 80 A Gate to drain charge VDD = 40 V, ID = 80 A Gate charge total VDD = 40 V, ID = 80 A, VGS = 0 to 10 V Gate plateau voltage VDD = 40 V, ID = 80 A Reverse Diode Inverse diode continuous forward current TC = 25 ˚C Inverse diode direct current,pulsed TC = 25 ˚C Inverse diode forward voltage VGS = 0 V, I F = 160 A Reverse recovery time VR = 30 V, IF=IS , diF/dt = 100 A/µs Reverse recovery charge VR = 30 V, IF=l S , diF/dt = 100 A/µs Data Sheet 4 05.99 BUZ 111S Power Dissipation Drain current Ptot = f (TC) ID = f (TC ) parameter: VGS ≥ 10 V BUZ111S BUZ111S 90 320 A W 70 240 ID Ptot 60 200 50 160 40 120 30 80 20 40 10 0 0 20 40 60 80 0 0 100 120 140 160 ˚C 190 20 40 60 80 100 120 140 160 ˚C 190 TC TC Safe operating area Transient thermal impedance I D = f (V DS) ZthJC = f (tp ) parameter : D = 0 , T C = 25 ˚C parameter : D = tp /T 10 3 BUZ111S 10 1 BUZ111S K/W tp = 29.0µs 10 0 DS /I D A V R DS (o ID n) = 100 µs Z thJC 10 2 10 -1 10 -2 D = 0.50 0.20 1 ms 10 1 10 -3 0.10 0.05 10 ms DC 10 0 -1 10 10 0 10 1 V 0.02 10 2 VDS Data Sheet 10 -4 single pulse 10 -5 -7 10 10 -6 10 -5 0.01 10 -4 10 -3 10 -2 s 10 0 tp 5 05.99 BUZ 111S Typ. output characteristics Typ. drain-source-on-resistance I D = f (VDS) RDS(on) = f (ID) parameter: tp = 80 µs parameter: V GS BUZ111S 190 BUZ111S Ptot = 300W l A kj 0.026 ih g Ω f 160 VGS [V] a 4.0 ID e 120 100 c 5.0 d 5.5 e 6.0 f 6.5 d g 7.0 h 7.5 i 8.0 j 9.0 k 10.0 80 60 4.5 c l c d e 0.022 0.020 RDS(on) 140 b b 0.018 0.016 0.014 0.012 f 0.010 g h 0.008 20.0 40 j 0.006 i k l b 0.004 20 a 0.002 0 0.0 0.5 1.0 1.5 2.0 2.5 3.0 3.5 4.0 V 5.0 0.000 0 VDS VGS [V] = b 4.5 c 5.0 20 d 5.5 e f 6.0 6.5 40 g 7.0 60 80 h i 7.5 8.0 j 9.0 k l 10.0 20.0 120 A 100 150 ID Typ. transfer characteristics I D= f (VGS) Typ. forward transconductance parameter: tp = 80 µs VDS ≥ 2 x I D x RDS(on) max gfs = f(ID ); Tj = 25˚C parameter: gfs 80 75 S A 60 60 55 gfs ID 50 50 45 40 40 35 30 30 25 20 20 15 10 10 5 0 0 1 2 3 4 V 0 0 6 VGS Data Sheet 10 20 30 40 50 A 65 ID 6 05.99 BUZ 111S Gate threshold voltage Drain-source on-resistance VGS(th) = f (Tj) RDS(on) = f (Tj) parameter : VGS = V DS, ID = 240 µA parameter : ID = 80 A, VGS = 10 V BUZ111S 5.0 V 0.028 Ω 4.4 0.024 4.0 VGS(th) RDS(on) 0.022 0.020 0.018 3.6 3.2 0.016 2.8 0.014 2.4 0.012 98% 2.0 0.010 typ 1.6 0.008 max typ 1.2 0.006 0.8 min 0.004 0.4 0.002 0.000 -60 0.0 -60 -20 20 60 100 140 ˚C -20 20 60 100 140 200 ˚C 200 Tj Tj Typ. capacitances Forward characteristics of reverse diode C = f (VDS) IF = f (VSD ) parameter: V GS = 0 V, f = 1 MHz parameter: Tj , tp = 80 µs 10 4 10 3 BUZ111S A Ciss pF C IF 10 2 Coss 10 3 Crss 10 1 Tj = 25 ˚C typ Tj = 175 ˚C typ Tj = 25 ˚C (98%) Tj = 175 ˚C (98%) 10 2 0 10 20 V 10 0 0.0 40 VDS Data Sheet 0.4 0.8 1.2 1.6 2.0 2.4 V 3.0 VSD 7 05.99 BUZ 111S Avalanche Energy EAS = f (Tj) Typ. gate charge parameter: ID = 80 A, V DD = 25 V VGS = f (QGate ) RGS = 25 Ω parameter: ID puls = 80 A BUZ111S 750 16 V mJ VGS EAS 12 450 10 0,2 VDS max 0,8 VDS max 8 300 6 4 150 2 0 20 40 60 80 100 120 140 ˚C 0 0 180 Tj 20 40 60 80 100 120 140 nC 180 Q Gate Drain-source breakdown voltage V(BR)DSS = f (Tj) BUZ111S 66 V V(BR)DSS 64 62 60 58 56 54 52 50 -60 -20 20 60 100 140 ˚C 200 Tj Data Sheet 8 05.99