Double Differential Magneto Resistor FP 410 L (4 x 80) FM Dimensions in mm Features Typical applications • Double differential magneto resistor on same carrier • Accurate intercenter spacing • High operating temperature range • High output voltage • Compact construction • Available in strip form for automatic assembly • • • • Incremental angular encoders Detection of sense of rotation Detection of speed Detection of position Type Ordering Code FP 410 L (4×80) FM Q65410-L80E (taped) FP 410 L (4×80) FM Q65110-L80F (singular) Semiconductor Group 1 07.96 FP 410 L (4 x 80) FM The double differential magneto resistor assembly consists of two pairs of magneto resistors, (L-type InSb/NiSb semiconductor resistors whose resistance value can be magnetically controlled), which are fixed to a ferrite substrate. Contact to the magneto resistors is achieved using a copper/polyimide carrier film known as Micropack. The basic resistance of each of the magnetic resistors is 80 Ω. The two series coupled pairs of magnetic resistors are actuated by an external magnetic field or can be biased by a permanent magnet and actuated by a soft iron target. Semiconductor Group 2 FP 410 L (4 x 80) FM Maximum ratings Parameter Symbol Value Unit Operating temperature TA Tstg Ptot VIN – 40 / + 175 °C – 40 / + 185 °C 1000 mW 8 V Storage temperature Power dissipation1) Supply voltage2) (B = 0.3 T) Thermal conductivity –attached to heatsink –in still air mW/K Gth case Gth A ≥ 20 2 Basic resistance (I ≤ 1 mA; B = 0 T) R01-3 R04-6 110…220 Ω Center symmetry3) M RB/R0 ≤6 % > 1.7 – Characteristics (TA = 25 °C) Relative resistance change (R = R01-3, R04-6 at B = 0 T) B = ± 0.3 T4) B=±1T Temperature coefficient B=0T B = ± 0.3 T B=±1T >7 TCR – 0.16 – 0.38 – 0.54 1) Corresponding to diagram Ptot = f(Tcase) 2) Corresponding to diagram VIN = f(Tcase) M R 01 – 2 – R 02 – 3 = ------------------------------- × 100% for R01-2 > R02-3 M R 04 – 5 – R 05 – 6 = ------------------------------- × 100% for R04-5 > R05-6 3) R 01 – 2 R 04 – 5 4) 1 T = 1 Tesla = 104 Gauss Semiconductor Group 3 %/K %/K %/K FP 410 L (4 x 80) FM Max. power dissipation versus temperature Ptot = f(T), T = Tcase, TA Maximum supply voltage versus temperature VIN 1-3, 4-6 = f(T), B = 0.3 T Typical MR resistance versus temperature R01-3, 4-6 = f(TA), B = Parameter Typical MR resistance versus magnetic induction B R01-3, 4-6 = f(B), TA = 25 °C Semiconductor Group 4