BAR 64-03W Silicon PIN Diode l High voltage current controlled RF resistor for RF attenuator and swirches l Freqency range above 1 MHz l Low resistance and short carrier lifetime l For frequencies up to 3 GHz Type Marking Ordering Code (tape and reel) BAR 64-03W 2 Q62702-A1045 Pin Configuration Package 1 2 C A SOD-323 1) Maximum Ratings per Diode Parameter Symbol Reverse voltage VR IF Ptot Tj Top Tstg Forward current Total Power dissipation TS ≤ 25°C Junction temperature Operating temperature range Storage temperature range BAR 64-03W Unit 200 V 100 mA 250 mW 150 °C -55 +150°C °C -55...+150°C °C Thermal Resistance Junction-ambient 1) Rth JA ≤ 450 K/W _________________________ 1)Package mounted on alumina 15mm x 16.7mm x 0.7mm Semiconductor Group 1 Edition A01, 22.07.94 BAR 64-03W Electrical Characteristics at TA = 25 °C, unless otherwise specified. Parameter Symbol Value min. typ. Unit max. DC Characteristics per Diode Breakdown voltage IR = 5 µA Forward voltage IF = 50 mA V(BR) Diode capacitance VR = 20 V, f = 1 MHz Forward resistance IF = 1 mA, f = 100 MHz IF = 10 mA, f = 100 MHz IF = 100 mA, f = 100 MHz Charge carrier lifetime IF = 10 mA, IR = 6 mA, IR = 3 mA Series inductance CT V 200 V - - 1.1 - 0.23 0.35 -- 12.5 2.1 0.85 20 3.8 1.35 - 1.55 - pF Ω rf µs τL Ls nH - Semiconductor Group - VF 2 2.0 - Edition A01, 22.07.94 BAR 64-03W Forward resistance rf= f (IF) f = 100 MHz Diode capacitance CT= f (VR) f = 1 MHz. Forward current IF = f (VF) Semiconductor Group 3 Edition A01, 22.07.94