Differential Magneto Resistor FP 412 L 100 Dimensions in mm Features Typical applications • • • • • • • • • • • Accurate intercenter spacing High operating temperature range High output voltage Signal amplitude independent of speed Compact construction Available in strip form for automatic assembly Detection of speed Detection of position Detection of sense of rotation Angular encoders Linear position sensing Type Ordering Code FP 412 L 100 Q65412-L100 Semiconductor Group 1 07.96 FP 412 L 100 The differential magneto resistor FP 412 L 100 is a magnetically variable resistor in Ltype InSb/NiSb semiconductor material. The MR is glued onto a ferrite substrate and is supplied in a "MICROPACK" copper/polyimide film package. The basic resistance of each of the magneto resistors is 100 Ω. The series coupled MRs are actuated by an external magnetic field or can be biased by a permanent magnet and actuated by a soft iron target. Maximum ratings Parameter Symbol Value Unit Operating temperature TA Tstg Ptot VIN – 40 / + 175 °C – 40 / + 185 °C 1000 mW 10 V Storage temperature Power dissipation1) Supply voltage2) (B = 0.2 T) Thermal conductivity –attached to heatsink –in still air mW/K Gth case Gth A ≥ 20 2 Basic resistance (I ≤ 1 mA, B = 0 T)3) R01-3 150…250 Ω Center symmetry4) M RB/R0 ≤ 10 % > 1.7 – Characteristics (TA = 25 °C) Relative resistance change R0 = R01-3, at B = 0 T B = ± 0.3 T B=±1T Temperature coefficient B=0T B = ± 0.3 T B=±1T >7 TCR – 0.16 – 0.38 – 0.54 1) Corresponding to diagram Ptot = f(Tcase) 2) Corresponding to diagram VIN = f(Tcase) 3) 1 T = 1 Tesla = 104 Gauss 4) M R 01 – 2 – R 02 – 3 = ------------------------------- × 100% for R01-2 > R02-3 R 01 – 2 Semiconductor Group 2 %/K %/K %/K FP 412 L 100 Max. power dissipation versus temperature Ptot = f(T), T = Tcase, TA Maximum supply voltage versus temperature VIN = f(T), B = 0.2 T, T = Tcase, TA Typical MR resistance versus temperature R1-3 = f(TA), B = Parameter Typical MR resistance versus magnetic induction B R1-3 = f(B), TA = 25 °C Semiconductor Group 3