INFINEON BAR64-02

BAR 64-02W
Silicon PIN Diode
• High voltage current controlled
2
RF resistor for RF attenuator and switches
• Frequency range above 1 MHz
• Low resistance and short carrier lifetime
• Very low inductance
1
• For frequencies up to 3 GHz
VES05991
• Extremely small plastic SMD package
Type
Marking Ordering Code
Pin Configuration
Package
BAR 64-02W
M
1=C
SCD-80
Q62702-A1215
2=A
Maximum Ratings
Parameter
Symbol
Diode reverse voltage
VR
200
V
Forward current
IF
100
mA
Total power dissipation, T S ≤ 125°C
Ptot
250
mW
Junction temperature
Tj
150
°C
Operating temperature range
Top
- 55 ...+150
°C
Storage temperature
Tstg
- 55 ...+150
Value
Unit
Thermal Resistance
Junction - ambient
1)
Junction - soldering point
RthJA
≤ 220
RthJS
≤ 140
K/W
1) Package mounted on alumina 15mm x 16.7mm x 0.7mm
Semiconductor Group
Semiconductor Group
11
Sep-07-1998
1998-11-01
BAR 64-02W
Electrical Characteristics at TA = 25 °C, unless otherwise specified.
Parameter
Symbol
Values
Unit
min.
typ.
max.
200
-
-
VF
-
-
1.1
mV
CT
-
0.23
0.35
pF
CC
-
0.09
-
Characteristics
Breakdown voltage
V(BR)
V
I (BR) = 5 µA
Forward voltage
I F = 50 mA
AC characteristics
Diode capacitance
VR = 20 V, f = 1 MHz
Case capacitance
f = 1 MHz
Forward resistance
Ω
rf
I F = 1 mA, f = 100 MHz
-
12.5
20
I F = 10 mA, f = 100 MHz
-
2.1
3.8
I F = 100 mA, f = 100 MHz
-
0.85
1.35
τrr
-
1.55
-
µs
Ls
-
0.6
-
nH
Charge carrier life time
I F = 10 mA, I R = 6 mA, I R = 3 mA
Series inductance
Semiconductor Group
Semiconductor Group
22
Sep-07-1998
1998-11-01
BAR 64-02W
Forward current IF = f (TA*;TS)
*): mounted on alumina 15mm x 16.7mm x 0.7mm
120
100
TS
90
80
70
TA
60
50
40
30
20
10
0
0
20
40
60
80
100
120
150
Permissible Pulse Load
Permissible Pulse Load R thJS = f(t p)
IFmax / IFDC = f(tp)
10 3
10 2
IFmax / IFDC
K/W
RthJS
10 2
10 1
D=0
0.005
0.01
0.02
0.05
0.1
0.2
0.5
10 1
0.5
0.2
0.1
0.05
0.02
0.01
0.005
D=0
10 0
10 -1 -6
10
-
10
-5
10
-4
10
-3
10
-2
s
10
10 0 -6
10
0
tp
Semiconductor Group
Semiconductor Group
10
-5
10
-4
10
-3
10
-2
10
-1
s
10
1
tp
33
Sep-07-1998
1998-11-01
BAR 64-02W
Diode capacitance CT = f (V R)
f = 1MHz
Forward resistance rf = f(IF)
f = 100MHz
10 3
0.6
Ohm
pF
0.4
RF
CT
10 2
10 1
0.3
0.2
10 0
0.1
0.0
0
5
10
15
20
V
10 -1 -2
10
30
10
-1
10
0
10
1
10
VR
2
mA 10
3
IF
Forward current IF = f (V F)
Intermodulation intersept point
T A = 25°C
IP3 = f (I F)
f = parameter
10 3
10 2
5
mA
f=900MHz
f=1800MHz
IP3
IF
10 2
10 1
dBm
10 0
10 -1
10 -2
0.0 0.1 0.2 0.3 0.4 0.5 0.6 0.7 0.8
V
10 1 -1
10
1.0
VF
Semiconductor Group
Semiconductor Group
10
0
mA
10
1
IF
44
Sep-07-1998
1998-11-01