NGTG40N120FL2W D

NGTG40N120FL2WG
IGBT - Field Stop II
This Insulated Gate Bipolar Transistor (IGBT) features a robust and
cost effective Field Stop II Trench construction, and provides superior
performance in demanding switching applications, offering both low
on state voltage and minimal switching loss. The IGBT is well suited
for UPS and solar applications.
Features
•
•
•
•
•
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Extremely Efficient Trench with Field Stop Technology
TJmax = 175°C
Optimized for High Speed Switching
10 ms Short Circuit Capability
These are Pb−Free Devices
40 A, 1200 V
VCEsat = 2.0 V
Eoff = 1.10 mJ
C
Typical Applications
• Solar Inverter
• Uninterruptible Power Inverter Supplies (UPS)
• Welding
G
ABSOLUTE MAXIMUM RATINGS
Rating
Symbol
Value
Unit
Collector−emitter voltage
VCES
1200
V
Collector current
@ TC = 25°C
@ TC = 100°C
IC
Pulsed collector current, Tpulse
limited by TJmax
ICM
Gate−emitter voltage
Transient gate−emitter voltage
(Tpulse = 5 ms, D < 0.10)
VGE
Power Dissipation
@ TC = 25°C
@ TC = 100°C
PD
Short Circuit Withstand Time
VGE = 15 V, VCE = 500 V, TJ ≤ 150°C
E
A
80
40
200
A
V
$20
±30
W
535
267
TSC
10
ms
Operating junction temperature
range
TJ
−55 to +175
°C
Storage temperature range
Tstg
−55 to +175
°C
Lead temperature for soldering, 1/8”
from case for 5 seconds
TSLD
260
°C
G
C
TO−247
CASE 340AL
E
MARKING DIAGRAM
G40N120FL2
AYWWG
Stresses exceeding those listed in the Maximum Ratings table may damage the
device. If any of these limits are exceeded, device functionality should not be
assumed, damage may occur and reliability may be affected.
A
Y
WW
G
= Assembly Location
= Year
= Work Week
= Pb−Free Package
ORDERING INFORMATION
Device
NGTG40N120FL2WG
© Semiconductor Components Industries, LLC, 2014
March, 2014 − Rev. 0
1
Package
Shipping
TO−247 30 Units / Rail
(Pb−Free)
Publication Order Number:
NGTG40N120FL2W/D
NGTG40N120FL2WG
THERMAL CHARACTERISTICS
Symbol
Value
Unit
Thermal resistance junction−to−case, for IGBT
Rating
RqJC
0.28
°C/W
Thermal resistance junction−to−ambient
RqJA
40
°C/W
ELECTRICAL CHARACTERISTICS (TJ = 25°C unless otherwise specified)
Parameter
Test Conditions
Symbol
Min
Typ
Max
Unit
VGE = 0 V, IC = 500 mA
V(BR)CES
1200
−
−
V
VGE = 15 V, IC = 40 A
VGE = 15 V, IC = 40 A, TJ = 175°C
VCEsat
−
−
2.00
2.40
2.40
−
V
VGE = VCE, IC = 400 mA
VGE(th)
4.5
5.5
6.5
V
Collector−emitter cut−off current, gate−
emitter short−circuited
VGE = 0 V, VCE = 1200 V
VGE = 0 V, VCE = 1200 V, TJ = 175°C
ICES
−
−
−
−
0.4
2
mA
Gate leakage current, collector−emitter
short−circuited
VGE = 20 V , VCE = 0 V
IGES
−
−
200
nA
Cies
−
7385
−
pF
Coes
−
230
−
Cres
−
140
−
Qg
−
313
−
Qge
−
61
−
Qgc
−
151
−
td(on)
−
116
−
STATIC CHARACTERISTIC
Collector−emitter breakdown voltage,
gate−emitter short−circuited
Collector−emitter saturation voltage
Gate−emitter threshold voltage
Input capacitance
Output capacitance
VCE = 20 V, VGE = 0 V, f = 1 MHz
Reverse transfer capacitance
Gate charge total
Gate to emitter charge
VCE = 600 V, IC = 40 A, VGE = 15 V
Gate to collector charge
nC
SWITCHING CHARACTERISTIC, INDUCTIVE LOAD
Turn−on delay time
Rise time
Turn−off delay time
Fall time
TJ = 25°C
VCC = 600 V, IC = 40 A
Rg = 10 W
VGE = 0 V/ 15V*
tr
−
42
−
td(off)
−
286
−
tf
−
121
−
Eon
−
3.4
−
Eoff
−
1.1
−
Total switching loss
Ets
−
4.5
−
Turn−on delay time
td(on)
−
111
−
Turn−on switching loss
Turn−off switching loss
Rise time
tr
−
43
−
td(off)
−
304
−
tf
−
260
−
Eon
−
4.4
−
Turn−off switching loss
Eoff
−
2.5
−
Total switching loss
Ets
−
6.9
−
Turn−off delay time
Fall time
Turn−on switching loss
TJ = 175°C
VCC = 600 V, IC = 40 A
Rg = 10 W
VGE = 0 V/ 15V*
ns
mJ
ns
mJ
Product parametric performance is indicated in the Electrical Characteristics for the listed test conditions, unless otherwise noted. Product
performance may not be indicated by the Electrical Characteristics if operated under different conditions.
*Includes diode reverse recovery loss using NGTB40N120FL2WG.
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NGTG40N120FL2WG
TYPICAL CHARACTERISTICS
160
TJ = 25°C
140
IC, COLLECTOR CURRENT (A)
IC, COLLECTOR CURRENT (A)
160
VGE = 20 V
to 13 V
120
100
11 V
80
10 V
60
40
9V
20
0
7V
0
1
2
3
4
8V
5
7
6
8
100
11 V
80
10 V
60
9V
40
8V
20
7V
1
2
3
4
5
6
8
7
VCE, COLLECTOR−EMITTER VOLTAGE (V)
VCE, COLLECTOR−EMITTER VOLTAGE (V)
Figure 1. Output Characteristics
Figure 2. Output Characteristics
160
140
IC, COLLECTOR CURRENT (A)
TJ = −55°C
VGE = 20 V
to 13 V
120
11 V
100
80
60
10 V
40
7V
20
9V
8V
0
1
2
3
4
5
6
7
140
120
100
80
60
40
TJ = 150°C
20
TJ = 25°C
0
0
8
1
2
3
4
5
6
7
8
9 10 11 12 13
VCE, COLLECTOR−EMITTER VOLTAGE (V)
VGE, GATE−EMITTER VOLTAGE (V)
Figure 3. Output Characteristics
Figure 4. Typical Transfer Characteristics
3.50
100000
TJ = 25°C
IC = 75 A
3.00
IC = 40 A
2.50
2.00
IC = 20 A
1.50
1.00
C, CAPACITANCE (pF)
IC, COLLECTOR CURRENT (A)
VCE, COLLECTOR−EMITTER VOLTAGE (V)
VGE = 20 V
to 13 V
120
0
160
0
TJ = 150°C
140
Cies
10000
1000
Coes
100
Cres
10
0.50
0.00
−75 −50 −25
0
25
50
1
75 100 125 150 175 200
0
10
20
30
40
50
60
70
80
TJ, JUNCTION TEMPERATURE (°C)
VCE, COLLECTOR−EMITTER VOLTAGE (V)
Figure 5. VCE(sat) vs TJ
Figure 6. Typical Capacitance
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3
90 100
NGTG40N120FL2WG
TYPICAL CHARACTERISTICS
VGE, GATE−EMITTER VOLTAGE (V)
16
14
VCE = 600 V
12
10
8
6
4
VCE = 600 V
VGE = 15 V
IC = 40 A
2
0
0
50
100
200
150
250
300
350
QG, GATE CHARGE (nC)
Figure 7. Typical Gate Charge
1000
5
4.5
3
2.5
Eoff
2
1.5
VCE = 600 V
VGE = 15 V
IC = 40 A
Rg = 10 W
1
0
0
12
20
40
60
80
100
8
140
td(off)
tf
100
tr
10
160
td(on)
VCE = 600 V
VGE = 15 V
IC = 40 A
Rg = 10 W
0
20
40
60
80
100
Figure 8. Switching Loss vs. Temperature
Figure 9. Switching Time vs. Temperature
Eon
Eoff
td(off)
tf
td(on)
100
tr
VCE = 600 V
VGE = 15 V
TJ = 150°C
Rg = 10 W
2
15
25
160
1000
4
5
140
TJ, JUNCTION TEMPERATURE (°C)
6
0
120
TJ, JUNCTION TEMPERATURE (°C)
VCE = 600 V
VGE = 15 V
TJ = 150°C
Rg = 10 W
10
120
SWITCHING TIME (ns)
SWITCHING LOSS (mJ)
3.5
0.5
SWITCHING LOSS (mJ)
SWITCHING TIME (ns)
Eon
4
35
45
55
65
75
10
85
5
15
25
35
45
55
65
IC, COLLECTOR CURRENT (A)
IC, COLLECTOR CURRENT (A)
Figure 10. Switching Loss vs. IC
Figure 11. Switching Time vs. IC
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75
85
NGTG40N120FL2WG
TYPICAL CHARACTERISTICS
10000
VCE = 600 V
VGE = 15 V
TJ = 150°C
IC = 40 A
SWITCHING LOSS (mJ)
12
10
SWITCHING TIME (ns)
14
Eon
8
6
4
Eoff
VCE = 600 V
VGE = 15 V
TJ = 150°C
IC = 40 A
1000
td(off)
td(on)
tf
100
tr
2
0
5
15
25
35
55
45
65
75
10
5
85
15
25
35
45
55
65
Rg, GATE RESISTOR (W)
Rg, GATE RESISTOR (W)
Figure 12. Switching Loss vs. Rg
Figure 13. Switching Time vs. Rg
75
85
1000
7
5
SWITCHING TIME (ns)
SWITCHING LOSS (mJ)
6
Eon
4
3
Eoff
2
VGE = 15 V
TJ = 150°C
IC = 40 A
Rg = 10 W
1
0
350
400
450
500
550
600 650
700
750
100
tr
VGE = 15 V
TJ = 150°C
IC = 40 A
Rg = 10 W
400
450
500
550
600 650
700
750 800
VCE, COLLECTOR−EMITTER VOLTAGE (V)
VCE, COLLECTOR−EMITTER VOLTAGE (V)
Figure 14. Switching Loss vs. VCE
Figure 15. Switching Time vs. VCE
1000
100
IC, COLLECTOR CURRENT (A)
IC, COLLECTOR CURRENT (A)
tf
td(on)
10
350
800
1000
50 ms
10
dc operation
100 ms
1 ms
1
Single Nonrepetitive
Pulse TC = 25°C
Curves must be derated
linearly with increase
in temperature
0.1
0.01
td(off)
1
10
100
1000
100
10
1
10000
VGE = 15 V, TC = 125°C
1
10
100
1000
10000
VCE, COLLECTOR−EMITTER VOLTAGE (V)
VCE, COLLECTOR−EMITTER VOLTAGE (V)
Figure 16. Safe Operating Area
Figure 17. Reverse Bias Safe Operating Area
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NGTG40N120FL2WG
TYPICAL CHARACTERISTICS
250
VCE = 600 V, RG = 10 W, VGE = 0/15 V
200
Ipk (A)
TC = 80°C
150
TC = 80°C
TC = 110°C
100
50
0
0.01
0.1
1
10
100
1000
FREQUENCY (kHz)
Figure 18. Collector Current vs. Switching
Frequency
SQUARE−WAVE PEAK R(t) (°C/W)
1
RqJA = 0.28
50% Duty Cycle
0.1
0.01
20%
10%
5%
R1
Junction
R2
Rn
Case
2%
C1
0.001
0.0001
1E−06
Ci (J/°C)
0.006487
0.023120
0.061163
0.092651
1.252250
Duty Factor = t1/t2
Peak TJ = PDM x ZqJC + TC
Single Pulse
1E−05
Cn
C2
Ri (°C/W)
0.048747
0.043252
0.051703
0.107932
0.025253
0.0001
0.001
0.01
ON−PULSE WIDTH (s)
Figure 19. IGBT Transient Thermal Impedance
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0.1
1
NGTG40N120FL2WG
Figure 20. Test Circuit for Switching Characteristics
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7
NGTG40N120FL2WG
Figure 21. Definition of Turn On Waveform
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8
NGTG40N120FL2WG
Figure 22. Definition of Turn Off Waveform
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NGTG40N120FL2WG
PACKAGE DIMENSIONS
TO−247
CASE 340AL
ISSUE A
E
E2/2
B
A
NOTE 4
SEATING
PLANE
Q
E2
D
2
B A
4
DIM
A
A1
b
b2
b4
c
D
E
E2
e
L
L1
P
Q
S
3
L1
NOTE 5
L
2X
b2
c
b4
3X
e
b
0.25
A1
NOTE 7
M
B A
M
NOTE 6
S
NOTE 3
1
M
P
A
NOTE 4
0.635
NOTES:
1. DIMENSIONING AND TOLERANCING PER ASME Y14.5M, 1994.
2. CONTROLLING DIMENSION: MILLIMETERS.
3. SLOT REQUIRED, NOTCH MAY BE ROUNDED.
4. DIMENSIONS D AND E DO NOT INCLUDE MOLD FLASH.
MOLD FLASH SHALL NOT EXCEED 0.13 PER SIDE. THESE
DIMENSIONS ARE MEASURED AT THE OUTERMOST
EXTREME OF THE PLASTIC BODY.
5. LEAD FINISH IS UNCONTROLLED IN THE REGION DEFINED BY
L1.
6. ∅P SHALL HAVE A MAXIMUM DRAFT ANGLE OF 1.5° TO THE
TOP OF THE PART WITH A MAXIMUM DIAMETER OF 3.91.
7. DIMENSION A1 TO BE MEASURED IN THE REGION DEFINED
BY L1.
M
MILLIMETERS
MIN
MAX
4.70
5.30
2.20
2.60
1.00
1.40
1.65
2.35
2.60
3.40
0.40
0.80
20.30
21.40
15.50
16.25
4.32
5.49
5.45 BSC
19.80
20.80
3.50
4.50
3.55
3.65
5.40
6.20
6.15 BSC
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NGTG40N120FL2W/D