NGTB50N65S1W D

NGTB50N65S1WG
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IGBT - Inverter Welding
This Insulated Gate Bipolar Transistor (IGBT) features a robust and
cost effective Trench construction, and provides superior performance
in demanding switching applications, offering both low on state
voltage and minimal switching loss. The IGBT is well suited for
welding applications. Incorporated into the device is a soft and fast
co−packaged free wheeling diode with a low forward voltage.
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50 A, 650 V
VCEsat = 2.1 V
EOFF = 0.53 mJ
Features
•
•
•
•
TJmax = 175°C
Soft Fast Reverse Recovery Diode
Optimized for High Speed Switching
These are Pb−Free Devices
C
Typical Applications
• Welding
G
ABSOLUTE MAXIMUM RATINGS
Rating
Symbol
Value
Unit
Collector−emitter voltage
VCES
650
V
Collector current
@ TC = 25°C
@ TC = 100°C
IC
Diode Forward Current
@ TC = 25°C
@ TC = 100°C
IF
A
140
50
A
140
50
C
IFM
140
A
Pulsed collector current, Tpulse
limited by TJmax
ICM
140
A
Gate−emitter voltage
VGE
$20
V
V
$30
Transient gate−emitter voltage
(TPULSE = 5 ms, D < 0.10)
TO−247
CASE 340AL
G
Diode Pulsed Current
TPULSE Limited by TJ Max
Power Dissipation
@ TC = 25°C
@ TC = 100°C
E
PD
E
MARKING DIAGRAM
50N65S1
AYWWG
W
300
150
Operating junction temperature range
TJ
−55 to +175
°C
Storage temperature range
Tstg
−55 to +175
°C
Lead temperature for soldering, 1/8″
from case for 5 seconds
TSLD
260
°C
Stresses exceeding those listed in the Maximum Ratings table may damage the
device. If any of these limits are exceeded, device functionality should not be
assumed, damage may occur and reliability may be affected.
A
Y
WW
G
= Assembly Location
= Year
= Work Week
= Pb−Free Package
This document contains information on a product under development. ON Semiconductor
reserves the right to change or discontinue this product without notice.
ORDERING INFORMATION
Device
NGTB50N65S1WG
© Semiconductor Components Industries, LLC, 2016
May, 2016 − Rev. P0
1
Package
Shipping
TO−247
(Pb−Free)
30 Units / Rail
Publication Order Number:
NGTB50N65S1W/D
NGTB50N65S1WG
THERMAL CHARACTERISTICS
Symbol
Value
Unit
Thermal resistance junction−to−case, for IGBT
Rating
RqJC
0.50
°C/W
Thermal resistance junction−to−case, for Diode
RqJC
1.00
°C/W
Thermal resistance junction−to−ambient
RqJA
40
°C/W
ELECTRICAL CHARACTERISTICS (TJ = 25°C unless otherwise specified)
Parameter
Test Conditions
Symbol
Min
Typ
Max
Unit
VGE = 0 V, IC = 500 mA
V(BR)CES
650
−
−
V
VGE = 15 V, IC = 50 A
VGE = 15 V, IC = 50 A, TJ = 175°C
VCEsat
1.50
−
2.1
2.8
2.45
−
V
VGE = VCE, IC = 350 mA
VGE(th)
4.5
5.5
6.5
V
Collector−emitter cut−off current, gate−
emitter short−circuited
VGE = 0 V, VCE = 650 V
VGE = 0 V, VCE = 650 V, TJ = 175°C
ICES
−
−
−
3.5
0.5
−
mA
Gate leakage current, collector−emitter
short−circuited
VGE = 20 V, VCE = 0 V
IGES
−
−
100
nA
Cies
−
3080
−
pF
VCE = 20 V, VGE = 0 V, f = 1 MHz
Coes
−
149
−
Cres
−
88
−
STATIC CHARACTERISTIC
Collector−emitter breakdown voltage,
gate−emitter short−circuited
Collector−emitter saturation voltage
Gate−emitter threshold voltage
DYNAMIC CHARACTERISTIC
Input capacitance
Output capacitance
Reverse transfer capacitance
Gate charge total
Qg
−
128
−
Qge
−
30
−
Qgc
−
69
−
td(on)
−
75
−
tr
−
46
−
td(off)
−
128
−
tf
−
68
−
Eon
−
1.25
−
Eoff
−
0.53
−
Total switching loss
Ets
−
1.78
−
Turn−on delay time
td(on)
−
70
−
Gate to emitter charge
VCE = 480 V, IC = 50 A, VGE = 15 V
Gate to collector charge
nC
SWITCHING CHARACTERISTIC, INDUCTIVE LOAD
Turn−on delay time
Rise time
Turn−off delay time
Fall time
Turn−on switching loss
TJ = 25°C
VCC = 400 V, IC = 50 A
Rg = 10 W
VGE = 15 V
Turn−off switching loss
Rise time
ns
mJ
ns
tr
−
48
−
td(off)
−
135
−
tf
−
93
−
Eon
−
1.75
−
Turn−off switching loss
Eoff
−
0.92
−
Total switching loss
Ets
−
2.67
−
VGE = 0 V, IF = 50 A
VGE = 0 V, IF = 50 A, TJ = 175°C
VF
1.50
−
2.65
2.8
3.25
−
V
TJ = 25°C
IF = 50 A, VR = 200 V
diF/dt = 200 A/ms
trr
−
70
−
ns
nC
Turn−off delay time
Fall time
Turn−on switching loss
TJ = 175°C
VCC = 400 V, IC = 50 A
Rg = 10 W
VGE = 15 V
mJ
DIODE CHARACTERISTIC
Forward voltage
Reverse recovery time
Reverse recovery charge
Reverse recovery current
Reverse recovery time
Reverse recovery charge
Reverse recovery current
TJ = 175°C
IF = 50 A, VR = 200 V
diF/dt = 200 A/ms
Qrr
−
450
−
Irrm
−
11
−
A
trr
−
120
−
ns
Qrr
−
1.27
−
mC
Irrm
−
17
−
A
Product parametric performance is indicated in the Electrical Characteristics for the listed test conditions, unless otherwise noted. Product
performance may not be indicated by the Electrical Characteristics if operated under different conditions.
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2
NGTB50N65S1WG
TYPICAL CHARACTERISTICS
140
IC, COLLECTOR CURRENT (A)
120
13 V
100
80
60
11 V
40
10 V
7V
20
0
1
2
3
4
9V
8V
6
5
15 V
VGE = 20 to 17 V
100
13 V
80
60
11 V
40
10 V
9V
8V
7V
20
8
0
1
2
3
4
6
5
7
VCE, COLLECTOR−EMITTER VOLTAGE (V)
VCE, COLLECTOR−EMITTER VOLTAGE (V)
Figure 1. Output Characteristics
Figure 2. Output Characteristics
8
140
140
VGE = 20 to 15 V
TJ = −55°C
TJ = 175°C
120
13 V
100
80
60
11 V
40
10 V
20
9V
7 V and 8 V
0
0
2
1
3
4
6
5
100
13 V
80
60
11 V
40
10 V
7V
20
0
1
2
3
4
5
6
9V
8V
7
VCE, COLLECTOR−EMITTER VOLTAGE (V)
Figure 3. Output Characteristics
Figure 4. Output Characteristics
120
100
TJ = 175°C
80
60
40
20
0
2
VGE = 20 to 17 V
VCE, COLLECTOR−EMITTER VOLTAGE (V)
TJ = 25°C
0
15 V
120
0
8
7
140
IC, COLLECTOR CURRENT (A)
TJ = 150°C
120
0
7
IC, COLLECTOR CURRENT (A)
0
IC, COLLECTOR CURRENT (A)
140
TJ = 25°C
VCE, COLLECTOR−EMITTER VOLTAGE (V)
IC, COLLECTOR CURRENT (A)
VGE = 20 to 15 V
4
6
8
10
12
14
16
18
20
4.0
IC = 75 A
3.5
3.0
IC = 50 A
2.5
IC = 25 A
2.0
1.5
1.0
−75 −50 −25
0
25
50
75 100 125 150 175 200
VGE, GATE−EMITTER VOLTAGE (V)
TJ, JUNCTION TEMPERATURE (°C)
Figure 5. Typical Transfer Characteristics
Figure 6. VCE(sat) vs. TJ
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3
8
NGTB50N65S1WG
TYPICAL CHARACTERISTICS
10K
100
90
IF, FORWARD CURRENT (A)
CAPACITANCE (pF)
TJ = 25°C
Cies
1K
Coes
100
Cres
TJ = 25°C
80
70
TJ = 175°C
60
50
40
30
20
10
10
0
10
30
20
40
50
60
70
80
90
100
0
1.0
1.5
2.0
2.5
3.0
3.5
VF, FORWARD VOLTAGE (V)
Figure 7. Typical Capacitance
Figure 8. Diode Forward Characteristics
18
1.9
16
1.7
14
12
10
8
6
VCE = 480 V
VGE = 15 V
IC = 50 A
4
2
VCE = 400 V
VGE = 15 V
IC = 50 A
Rg = 10 W
1.5
4.0
Eon
1.3
1.1
0.9
Eoff
0.7
0.5
0.3
0
0
20
60
40
80
100
120
0
140
20
40
60
80
100 120 140 160 180 200
QG, GATE CHARGE (nC)
TJ, JUNCTION TEMPERATURE (°C)
Figure 9. Typical Gate Charge
Figure 10. Switching Loss vs. Temperature
6
SWITCHING LOSS (mJ)
1000
SWITCHING TIME (ns)
0.5
VCE, COLLECTOR−EMITTER VOLTAGE (V)
SWITCHING LOSS (mJ)
VGE, GATE−EMITTER VOLTAGE (V)
0
td(off)
100
tf
td(on)
tr
10
VCE = 400 V
VGE = 15 V
IC = 50 A
Rg = 10 W
1
0
25
50
VCE = 400 V
VGE = 15 V
TJ = 175°C
Rg = 10 W
5
Eoff
4
3
2
Eon
1
0
75
100
125
150
175
200
0
10
20
30
40
50
60
70
TJ, JUNCTION TEMPERATURE (°C)
IC, COLLECTOR CURRENT (A)
Figure 11. Switching Time vs. Temperature
Figure 12. Switching Loss vs. IC
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4
80
90
NGTB50N65S1WG
TYPICAL CHARACTERISTICS
7
1000
VCE = 400 V
VGE = 15 V
TJ = 175°C
IC = 50 A
tf
100
SWITCHING LOSS (mJ)
SWITCHING TIME (ns)
6
td(off)
td(on)
tr
10
VCE = 400 V
VGE = 15 V
TJ = 175°C
Rg = 10 W
1
0
10
20
5
4
3
2
0
30
40
50
60
70
80
90
5
RG, GATE RESISTOR (W)
Figure 13. Switching Time vs. IC
Figure 14. Switching Loss vs. RG
3.5
SWITCHING LOSS (mJ)
tf
100
td(on)
tr
VCE = 400 V
VGE = 15 V
TJ = 175°C
IC = 50 A
10
VGE = 15 V
TJ = 175°C
IC = 50 A
Rg = 10 W
3.0
2.5
Eon
2.0
Eoff
1.5
1.0
0.5
0
5
150 200
10 15 20 25 30 35 40 45 50 55 60 65 70
250
300
350
400
450
500
550 600
RG, GATE RESISTOR (W)
VCE, COLLECTOR−EMITTER VOLTAGE (V)
Figure 15. Switching Time vs. RG
Figure 16. Switching Loss vs. VCE
1000
VGE = 15 V
TJ = 175°C
IC = 50 A
Rg = 10 W
IC, COLLECTOR CURRENT (A)
SWITCHING TIME (ns)
10 15 20 25 30 35 40 45 50 55 60 65 70
IC, COLLECTOR CURRENT (A)
td(off)
SWITCHING TIME (ns)
Eoff
1
1000
1000
Eon
td(off)
100
tf
td(on)
tr
10
100 ms
1 ms
50 ms
100
dc operation
10
Single Nonrepetitive
Pulse TC = 25°C
Curves must be derated
linearly with increase
in temperature
1
0.1
150 200
250
300
350
400
450
500
550 600
1
10
100
1K
VCE, COLLECTOR−EMITTER VOLTAGE (V)
VCE, COLLECTOR−EMITTER VOLTAGE (V)
Figure 17. Switching Time vs. VCE
Figure 18. Safe Operating Area
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5
10K
NGTB50N65S1WG
TYPICAL CHARACTERISTICS
160
trr, REVERSE RECOVERY TIME (ns)
IC, COLLECTOR CURRENT (A)
1000
100
10
VGE = 15 V, TC = 175°C
1
TJ = 175°C, IF = 50 A
120
100
TJ = 25°C, IF = 50 A
80
60
40
20
1
10
100
1K
100
300
500
700
900
diF/dt, DIODE CURRENT SLOPE (A/ms)
Figure 19. Reverse Bias Safe Operating Area
Figure 20. trr vs. diF/dt
Irm, REVERSE RECOVERY CURRENT (A)
VCE, COLLECTOR−EMITTER VOLTAGE (V)
2.0
VR = 400 V
1.8
1.6
TJ = 175°C, IF = 50 A
1.4
1.2
1.0
0.8
TJ = 25°C, IF = 50 A
0.6
0.4
0.2
0
100
300
500
700
900
1100
VR = 400 V
TJ = 175°C, IF = 50 A
25
20
15
TJ = 25°C, IF = 50 A
10
5
0
100
500
300
700
900
diF/dt, DIODE CURRENT SLOPE (A/ms)
Figure 21. Qrr vs. diF/dt
Figure 22. Irm vs. diF/dt
4.00
3.75
3.50
3.25
3.00
2.75
IF = 75 A
IF = 50 A
2.50
2.25
IF = 25 A
2.00
1.75
1.50
1.25
1.00
−75 −50 −25
0
25
75 100 125 150 175 200
50
TJ, JUNCTION TEMPERATURE (°C)
Figure 23. VF vs. TJ
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6
1100
30
diF/dt, DIODE CURRENT SLOPE (A/ms)
VF, FORWARD VOLTAGE (V)
Qrr, REVERSE RECOVERY CHARGE (mC)
VR = 400 V
140
1100
NGTB50N65S1WG
TYPICAL CHARACTERISTICS
150
Ramp, TC = 80°C
Ipk (A)
125
100
Ramp, TC = 110°C
Square, TC = 80°C
75
Square, TC = 110°C
50
25
0
0.01
0.1
1
10
100
1000
FREQUENCY (kHz)
Figure 24. Collector Current vs. Switching Frequency
R(t), SQUARE−WAVE PEAK (°C/W)
1
50% Duty Cycle
RqJC = 0.50
20%
0.1
10%
5%
0.01
2%
Junction R1
R2
Rn
C1
C2
Cn
0.001
Single Pulse
Ri (°C/W) Ci (J/W)
0.0642
0.0608
0.0507
0.1706
0.1423
0.0094
0.0016
0.0052
0.0197
0.0185
0.0703
3.3617
Duty Factor = t1/t2
Peak TJ = PDM x ZqJC + TC
0.0001
0.000001
Case
0.00001
0.0001
0.001
0.01
0.1
1
PULSE TIME (sec)
Figure 25. IGBT Transient Thermal Impedance
R(t), SQUARE−WAVE PEAK (°C/W)
1
RqJC = 1.0
50% Duty Cycle
Ri (°C/W) Ci (J/W)
20%
10%
0.1
Junction R1
R2
Rn
C1
C2
Cn
Case
5%
2%
0.01
0.000065
0.000493
0.001398
0.001975
0.003384
0.005124
0.023709
0.057588
0.125720
2.504837
Duty Factor = t1/t2
Peak TJ = PDM x ZqJC + TC
Single Pulse
0.000001
0.015502
0.020298
0.022613
0.050622
0.093449
0.195154
0.133377
0.173649
0.251534
0.039923
0.00001
0.0001
0.001
PULSE TIME (sec)
0.01
Figure 26. Diode Transient Thermal Impedance
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7
0.1
1
NGTB50N65S1WG
Figure 27. Test Circuit for Switching Characteristics
Figure 28. Definition of Turn On Waveform
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8
NGTB50N65S1WG
Figure 29. Definition of Turn Off Waveform
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9
NGTB50N65S1WG
PACKAGE DIMENSIONS
TO−247
CASE 340AL
ISSUE A
B
A
NOTE 4
E
SEATING
PLANE
0.635
M
P
A
Q
E2
D
S
NOTE 3
1
2
4
DIM
A
A1
b
b2
b4
c
D
E
E2
e
L
L1
P
Q
S
3
L1
NOTE 5
L
2X
b2
c
b4
3X
e
A1
b
0.25
NOTE 7
M
B A
M
NOTE 6
E2/2
NOTE 4
B A
NOTES:
1. DIMENSIONING AND TOLERANCING PER ASME Y14.5M, 1994.
2. CONTROLLING DIMENSION: MILLIMETERS.
3. SLOT REQUIRED, NOTCH MAY BE ROUNDED.
4. DIMENSIONS D AND E DO NOT INCLUDE MOLD FLASH.
MOLD FLASH SHALL NOT EXCEED 0.13 PER SIDE. THESE
DIMENSIONS ARE MEASURED AT THE OUTERMOST
EXTREME OF THE PLASTIC BODY.
5. LEAD FINISH IS UNCONTROLLED IN THE REGION DEFINED BY
L1.
6. ∅P SHALL HAVE A MAXIMUM DRAFT ANGLE OF 1.5° TO THE
TOP OF THE PART WITH A MAXIMUM DIAMETER OF 3.91.
7. DIMENSION A1 TO BE MEASURED IN THE REGION DEFINED
BY L1.
M
MILLIMETERS
MIN
MAX
4.70
5.30
2.20
2.60
1.00
1.40
1.65
2.35
2.60
3.40
0.40
0.80
20.30
21.40
15.50
16.25
4.32
5.49
5.45 BSC
19.80
20.80
3.50
4.50
3.55
3.65
5.40
6.20
6.15 BSC
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