NGTB50N65S1WG Product Preview IGBT - Inverter Welding This Insulated Gate Bipolar Transistor (IGBT) features a robust and cost effective Trench construction, and provides superior performance in demanding switching applications, offering both low on state voltage and minimal switching loss. The IGBT is well suited for welding applications. Incorporated into the device is a soft and fast co−packaged free wheeling diode with a low forward voltage. www.onsemi.com 50 A, 650 V VCEsat = 2.1 V EOFF = 0.53 mJ Features • • • • TJmax = 175°C Soft Fast Reverse Recovery Diode Optimized for High Speed Switching These are Pb−Free Devices C Typical Applications • Welding G ABSOLUTE MAXIMUM RATINGS Rating Symbol Value Unit Collector−emitter voltage VCES 650 V Collector current @ TC = 25°C @ TC = 100°C IC Diode Forward Current @ TC = 25°C @ TC = 100°C IF A 140 50 A 140 50 C IFM 140 A Pulsed collector current, Tpulse limited by TJmax ICM 140 A Gate−emitter voltage VGE $20 V V $30 Transient gate−emitter voltage (TPULSE = 5 ms, D < 0.10) TO−247 CASE 340AL G Diode Pulsed Current TPULSE Limited by TJ Max Power Dissipation @ TC = 25°C @ TC = 100°C E PD E MARKING DIAGRAM 50N65S1 AYWWG W 300 150 Operating junction temperature range TJ −55 to +175 °C Storage temperature range Tstg −55 to +175 °C Lead temperature for soldering, 1/8″ from case for 5 seconds TSLD 260 °C Stresses exceeding those listed in the Maximum Ratings table may damage the device. If any of these limits are exceeded, device functionality should not be assumed, damage may occur and reliability may be affected. A Y WW G = Assembly Location = Year = Work Week = Pb−Free Package This document contains information on a product under development. ON Semiconductor reserves the right to change or discontinue this product without notice. ORDERING INFORMATION Device NGTB50N65S1WG © Semiconductor Components Industries, LLC, 2016 May, 2016 − Rev. P0 1 Package Shipping TO−247 (Pb−Free) 30 Units / Rail Publication Order Number: NGTB50N65S1W/D NGTB50N65S1WG THERMAL CHARACTERISTICS Symbol Value Unit Thermal resistance junction−to−case, for IGBT Rating RqJC 0.50 °C/W Thermal resistance junction−to−case, for Diode RqJC 1.00 °C/W Thermal resistance junction−to−ambient RqJA 40 °C/W ELECTRICAL CHARACTERISTICS (TJ = 25°C unless otherwise specified) Parameter Test Conditions Symbol Min Typ Max Unit VGE = 0 V, IC = 500 mA V(BR)CES 650 − − V VGE = 15 V, IC = 50 A VGE = 15 V, IC = 50 A, TJ = 175°C VCEsat 1.50 − 2.1 2.8 2.45 − V VGE = VCE, IC = 350 mA VGE(th) 4.5 5.5 6.5 V Collector−emitter cut−off current, gate− emitter short−circuited VGE = 0 V, VCE = 650 V VGE = 0 V, VCE = 650 V, TJ = 175°C ICES − − − 3.5 0.5 − mA Gate leakage current, collector−emitter short−circuited VGE = 20 V, VCE = 0 V IGES − − 100 nA Cies − 3080 − pF VCE = 20 V, VGE = 0 V, f = 1 MHz Coes − 149 − Cres − 88 − STATIC CHARACTERISTIC Collector−emitter breakdown voltage, gate−emitter short−circuited Collector−emitter saturation voltage Gate−emitter threshold voltage DYNAMIC CHARACTERISTIC Input capacitance Output capacitance Reverse transfer capacitance Gate charge total Qg − 128 − Qge − 30 − Qgc − 69 − td(on) − 75 − tr − 46 − td(off) − 128 − tf − 68 − Eon − 1.25 − Eoff − 0.53 − Total switching loss Ets − 1.78 − Turn−on delay time td(on) − 70 − Gate to emitter charge VCE = 480 V, IC = 50 A, VGE = 15 V Gate to collector charge nC SWITCHING CHARACTERISTIC, INDUCTIVE LOAD Turn−on delay time Rise time Turn−off delay time Fall time Turn−on switching loss TJ = 25°C VCC = 400 V, IC = 50 A Rg = 10 W VGE = 15 V Turn−off switching loss Rise time ns mJ ns tr − 48 − td(off) − 135 − tf − 93 − Eon − 1.75 − Turn−off switching loss Eoff − 0.92 − Total switching loss Ets − 2.67 − VGE = 0 V, IF = 50 A VGE = 0 V, IF = 50 A, TJ = 175°C VF 1.50 − 2.65 2.8 3.25 − V TJ = 25°C IF = 50 A, VR = 200 V diF/dt = 200 A/ms trr − 70 − ns nC Turn−off delay time Fall time Turn−on switching loss TJ = 175°C VCC = 400 V, IC = 50 A Rg = 10 W VGE = 15 V mJ DIODE CHARACTERISTIC Forward voltage Reverse recovery time Reverse recovery charge Reverse recovery current Reverse recovery time Reverse recovery charge Reverse recovery current TJ = 175°C IF = 50 A, VR = 200 V diF/dt = 200 A/ms Qrr − 450 − Irrm − 11 − A trr − 120 − ns Qrr − 1.27 − mC Irrm − 17 − A Product parametric performance is indicated in the Electrical Characteristics for the listed test conditions, unless otherwise noted. Product performance may not be indicated by the Electrical Characteristics if operated under different conditions. www.onsemi.com 2 NGTB50N65S1WG TYPICAL CHARACTERISTICS 140 IC, COLLECTOR CURRENT (A) 120 13 V 100 80 60 11 V 40 10 V 7V 20 0 1 2 3 4 9V 8V 6 5 15 V VGE = 20 to 17 V 100 13 V 80 60 11 V 40 10 V 9V 8V 7V 20 8 0 1 2 3 4 6 5 7 VCE, COLLECTOR−EMITTER VOLTAGE (V) VCE, COLLECTOR−EMITTER VOLTAGE (V) Figure 1. Output Characteristics Figure 2. Output Characteristics 8 140 140 VGE = 20 to 15 V TJ = −55°C TJ = 175°C 120 13 V 100 80 60 11 V 40 10 V 20 9V 7 V and 8 V 0 0 2 1 3 4 6 5 100 13 V 80 60 11 V 40 10 V 7V 20 0 1 2 3 4 5 6 9V 8V 7 VCE, COLLECTOR−EMITTER VOLTAGE (V) Figure 3. Output Characteristics Figure 4. Output Characteristics 120 100 TJ = 175°C 80 60 40 20 0 2 VGE = 20 to 17 V VCE, COLLECTOR−EMITTER VOLTAGE (V) TJ = 25°C 0 15 V 120 0 8 7 140 IC, COLLECTOR CURRENT (A) TJ = 150°C 120 0 7 IC, COLLECTOR CURRENT (A) 0 IC, COLLECTOR CURRENT (A) 140 TJ = 25°C VCE, COLLECTOR−EMITTER VOLTAGE (V) IC, COLLECTOR CURRENT (A) VGE = 20 to 15 V 4 6 8 10 12 14 16 18 20 4.0 IC = 75 A 3.5 3.0 IC = 50 A 2.5 IC = 25 A 2.0 1.5 1.0 −75 −50 −25 0 25 50 75 100 125 150 175 200 VGE, GATE−EMITTER VOLTAGE (V) TJ, JUNCTION TEMPERATURE (°C) Figure 5. Typical Transfer Characteristics Figure 6. VCE(sat) vs. TJ www.onsemi.com 3 8 NGTB50N65S1WG TYPICAL CHARACTERISTICS 10K 100 90 IF, FORWARD CURRENT (A) CAPACITANCE (pF) TJ = 25°C Cies 1K Coes 100 Cres TJ = 25°C 80 70 TJ = 175°C 60 50 40 30 20 10 10 0 10 30 20 40 50 60 70 80 90 100 0 1.0 1.5 2.0 2.5 3.0 3.5 VF, FORWARD VOLTAGE (V) Figure 7. Typical Capacitance Figure 8. Diode Forward Characteristics 18 1.9 16 1.7 14 12 10 8 6 VCE = 480 V VGE = 15 V IC = 50 A 4 2 VCE = 400 V VGE = 15 V IC = 50 A Rg = 10 W 1.5 4.0 Eon 1.3 1.1 0.9 Eoff 0.7 0.5 0.3 0 0 20 60 40 80 100 120 0 140 20 40 60 80 100 120 140 160 180 200 QG, GATE CHARGE (nC) TJ, JUNCTION TEMPERATURE (°C) Figure 9. Typical Gate Charge Figure 10. Switching Loss vs. Temperature 6 SWITCHING LOSS (mJ) 1000 SWITCHING TIME (ns) 0.5 VCE, COLLECTOR−EMITTER VOLTAGE (V) SWITCHING LOSS (mJ) VGE, GATE−EMITTER VOLTAGE (V) 0 td(off) 100 tf td(on) tr 10 VCE = 400 V VGE = 15 V IC = 50 A Rg = 10 W 1 0 25 50 VCE = 400 V VGE = 15 V TJ = 175°C Rg = 10 W 5 Eoff 4 3 2 Eon 1 0 75 100 125 150 175 200 0 10 20 30 40 50 60 70 TJ, JUNCTION TEMPERATURE (°C) IC, COLLECTOR CURRENT (A) Figure 11. Switching Time vs. Temperature Figure 12. Switching Loss vs. IC www.onsemi.com 4 80 90 NGTB50N65S1WG TYPICAL CHARACTERISTICS 7 1000 VCE = 400 V VGE = 15 V TJ = 175°C IC = 50 A tf 100 SWITCHING LOSS (mJ) SWITCHING TIME (ns) 6 td(off) td(on) tr 10 VCE = 400 V VGE = 15 V TJ = 175°C Rg = 10 W 1 0 10 20 5 4 3 2 0 30 40 50 60 70 80 90 5 RG, GATE RESISTOR (W) Figure 13. Switching Time vs. IC Figure 14. Switching Loss vs. RG 3.5 SWITCHING LOSS (mJ) tf 100 td(on) tr VCE = 400 V VGE = 15 V TJ = 175°C IC = 50 A 10 VGE = 15 V TJ = 175°C IC = 50 A Rg = 10 W 3.0 2.5 Eon 2.0 Eoff 1.5 1.0 0.5 0 5 150 200 10 15 20 25 30 35 40 45 50 55 60 65 70 250 300 350 400 450 500 550 600 RG, GATE RESISTOR (W) VCE, COLLECTOR−EMITTER VOLTAGE (V) Figure 15. Switching Time vs. RG Figure 16. Switching Loss vs. VCE 1000 VGE = 15 V TJ = 175°C IC = 50 A Rg = 10 W IC, COLLECTOR CURRENT (A) SWITCHING TIME (ns) 10 15 20 25 30 35 40 45 50 55 60 65 70 IC, COLLECTOR CURRENT (A) td(off) SWITCHING TIME (ns) Eoff 1 1000 1000 Eon td(off) 100 tf td(on) tr 10 100 ms 1 ms 50 ms 100 dc operation 10 Single Nonrepetitive Pulse TC = 25°C Curves must be derated linearly with increase in temperature 1 0.1 150 200 250 300 350 400 450 500 550 600 1 10 100 1K VCE, COLLECTOR−EMITTER VOLTAGE (V) VCE, COLLECTOR−EMITTER VOLTAGE (V) Figure 17. Switching Time vs. VCE Figure 18. Safe Operating Area www.onsemi.com 5 10K NGTB50N65S1WG TYPICAL CHARACTERISTICS 160 trr, REVERSE RECOVERY TIME (ns) IC, COLLECTOR CURRENT (A) 1000 100 10 VGE = 15 V, TC = 175°C 1 TJ = 175°C, IF = 50 A 120 100 TJ = 25°C, IF = 50 A 80 60 40 20 1 10 100 1K 100 300 500 700 900 diF/dt, DIODE CURRENT SLOPE (A/ms) Figure 19. Reverse Bias Safe Operating Area Figure 20. trr vs. diF/dt Irm, REVERSE RECOVERY CURRENT (A) VCE, COLLECTOR−EMITTER VOLTAGE (V) 2.0 VR = 400 V 1.8 1.6 TJ = 175°C, IF = 50 A 1.4 1.2 1.0 0.8 TJ = 25°C, IF = 50 A 0.6 0.4 0.2 0 100 300 500 700 900 1100 VR = 400 V TJ = 175°C, IF = 50 A 25 20 15 TJ = 25°C, IF = 50 A 10 5 0 100 500 300 700 900 diF/dt, DIODE CURRENT SLOPE (A/ms) Figure 21. Qrr vs. diF/dt Figure 22. Irm vs. diF/dt 4.00 3.75 3.50 3.25 3.00 2.75 IF = 75 A IF = 50 A 2.50 2.25 IF = 25 A 2.00 1.75 1.50 1.25 1.00 −75 −50 −25 0 25 75 100 125 150 175 200 50 TJ, JUNCTION TEMPERATURE (°C) Figure 23. VF vs. TJ www.onsemi.com 6 1100 30 diF/dt, DIODE CURRENT SLOPE (A/ms) VF, FORWARD VOLTAGE (V) Qrr, REVERSE RECOVERY CHARGE (mC) VR = 400 V 140 1100 NGTB50N65S1WG TYPICAL CHARACTERISTICS 150 Ramp, TC = 80°C Ipk (A) 125 100 Ramp, TC = 110°C Square, TC = 80°C 75 Square, TC = 110°C 50 25 0 0.01 0.1 1 10 100 1000 FREQUENCY (kHz) Figure 24. Collector Current vs. Switching Frequency R(t), SQUARE−WAVE PEAK (°C/W) 1 50% Duty Cycle RqJC = 0.50 20% 0.1 10% 5% 0.01 2% Junction R1 R2 Rn C1 C2 Cn 0.001 Single Pulse Ri (°C/W) Ci (J/W) 0.0642 0.0608 0.0507 0.1706 0.1423 0.0094 0.0016 0.0052 0.0197 0.0185 0.0703 3.3617 Duty Factor = t1/t2 Peak TJ = PDM x ZqJC + TC 0.0001 0.000001 Case 0.00001 0.0001 0.001 0.01 0.1 1 PULSE TIME (sec) Figure 25. IGBT Transient Thermal Impedance R(t), SQUARE−WAVE PEAK (°C/W) 1 RqJC = 1.0 50% Duty Cycle Ri (°C/W) Ci (J/W) 20% 10% 0.1 Junction R1 R2 Rn C1 C2 Cn Case 5% 2% 0.01 0.000065 0.000493 0.001398 0.001975 0.003384 0.005124 0.023709 0.057588 0.125720 2.504837 Duty Factor = t1/t2 Peak TJ = PDM x ZqJC + TC Single Pulse 0.000001 0.015502 0.020298 0.022613 0.050622 0.093449 0.195154 0.133377 0.173649 0.251534 0.039923 0.00001 0.0001 0.001 PULSE TIME (sec) 0.01 Figure 26. Diode Transient Thermal Impedance www.onsemi.com 7 0.1 1 NGTB50N65S1WG Figure 27. Test Circuit for Switching Characteristics Figure 28. Definition of Turn On Waveform www.onsemi.com 8 NGTB50N65S1WG Figure 29. Definition of Turn Off Waveform www.onsemi.com 9 NGTB50N65S1WG PACKAGE DIMENSIONS TO−247 CASE 340AL ISSUE A B A NOTE 4 E SEATING PLANE 0.635 M P A Q E2 D S NOTE 3 1 2 4 DIM A A1 b b2 b4 c D E E2 e L L1 P Q S 3 L1 NOTE 5 L 2X b2 c b4 3X e A1 b 0.25 NOTE 7 M B A M NOTE 6 E2/2 NOTE 4 B A NOTES: 1. DIMENSIONING AND TOLERANCING PER ASME Y14.5M, 1994. 2. CONTROLLING DIMENSION: MILLIMETERS. 3. SLOT REQUIRED, NOTCH MAY BE ROUNDED. 4. DIMENSIONS D AND E DO NOT INCLUDE MOLD FLASH. MOLD FLASH SHALL NOT EXCEED 0.13 PER SIDE. THESE DIMENSIONS ARE MEASURED AT THE OUTERMOST EXTREME OF THE PLASTIC BODY. 5. LEAD FINISH IS UNCONTROLLED IN THE REGION DEFINED BY L1. 6. ∅P SHALL HAVE A MAXIMUM DRAFT ANGLE OF 1.5° TO THE TOP OF THE PART WITH A MAXIMUM DIAMETER OF 3.91. 7. DIMENSION A1 TO BE MEASURED IN THE REGION DEFINED BY L1. M MILLIMETERS MIN MAX 4.70 5.30 2.20 2.60 1.00 1.40 1.65 2.35 2.60 3.40 0.40 0.80 20.30 21.40 15.50 16.25 4.32 5.49 5.45 BSC 19.80 20.80 3.50 4.50 3.55 3.65 5.40 6.20 6.15 BSC ON Semiconductor and are trademarks of Semiconductor Components Industries, LLC dba ON Semiconductor or its subsidiaries in the United States and/or other countries. ON Semiconductor owns the rights to a number of patents, trademarks, copyrights, trade secrets, and other intellectual property. A listing of ON Semiconductor’s product/patent coverage may be accessed at www.onsemi.com/site/pdf/Patent−Marking.pdf. ON Semiconductor reserves the right to make changes without further notice to any products herein. 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