MCP87030 High-Speed N-Channel Power MOSFET Features: Description: • Low Drain-to-Source On Resistance (RDS(ON)) • Low Total Gate Charge (QG) and Gate-to-Drain Charge (QGD) • Low Series Gate Resistance (RG) • Fast Switching • Capable of Short Dead-Time Operation • RoHS Compliant The MCP87030 is an N-Channel power MOSFET in a popular PDFN 5 mm x 6 mm package. Advanced packaging and silicon processing technologies allow the MCP87030 to achieve a low QG for a given RDS(on) value, resulting in a low Figure of Merit (FOM). Combined with low RG, the low FOM of the MCP87030 allows high efficiency power conversion with reduced switching and conduction losses. Applications: • Point-of-Load DC-DC Converters • High-Efficiency Power Management in Servers, Networking and Automotive Applications Package Type PDFN 5 x 6 S 1 8 D S 2 7 D S 3 6 D G 4 5 D Product Summary Table: Unless otherwise indicated, TA = +25°C Parameters Sym. Min. Typ. Max. Units Conditions Drain-to-Source Breakdown Voltage BVDSS 25 — — V VGS = 0V, ID = 250 µA Gate-to-Source Threshold Voltage VGS(TH) 1 1.3 1.6 V VDS = VGS, ID = 250 µA Drain-to-Source On Resistance RDS(ON) — 3.3 4 mΩ VGS = 4.5V, ID = 20A — 2.8 3.5 mΩ VGS = 10V, ID = 20A Operating Characteristics Total Gate Charge QG — 17 22 nC VDS = 12.5V, ID = 20A, VGS = 4.5V Gate-to-Drain Charge QGD — 6.7 — nC VDS = 12.5V, ID = 20A RG — 1.2 — Ω — Thermal Resistance Junction-to-X RθJX — — 55 °C/W Note 1 Thermal Resistance Junction-to-Case RθJC — — 1.2 °C/W Note 2 Series Gate Resistance Thermal Characteristics Note 1: 2: RθJX is determined with the device surface mounted on a 4-Layer FR4 PCB, with a 1" x 1" mounting pad of 2 oz. copper. This characteristic is dependent on user’s board design. RθJC is determined using JEDEC 51-14 Method. This characteristic is determined by design. 2013 Microchip Technology Inc. DS200002328B-page 3 MCP87030 1.0 † Notice: Stresses above those listed under “Maximum Ratings” may cause permanent damage to the device. This is a stress rating only and functional operation of the device at those or any other conditions above those indicated in the operational sections of this specification is not intended. Exposure to maximum rating conditions for extended periods may affect device reliability. ELECTRICAL CHARACTERISTICS Absolute Maximum Ratings† VDS .......................................................................+25V VGS ........................................................... +10.0V / -8V ID, Continuous ................................. 100A, TC = +25°C PD .....................................................2.2W, TA = +25°C TJ, TSTG..............................................-55°C to +150°C EAS Avalanche Energy ..................................... 450 mJ ID = 30A, L = 1 mH, RG = 25Ω DC ELECTRICAL CHARACTERISTICS Electrical Characteristics: Unless otherwise indicated, TA = +25°C Parameters Sym. Min. Typ. Max. Units Conditions BVDSS 25 — — V VGS = 0V, ID = 250 µA IDSS — — 1 µA VGS = 0V, VDS = 20V Gate-to-Source Leakage Current IGSS — — 100 nA VDS = 0V, VGS = 10V/-8V Gate-to-Source Threshold Voltage VGS(TH) 1 1.3 1.6 V VDS = VGS, ID = 250 µA RDS(ON) — 4 — m VGS = 3.3V, ID = 20A — 3.3 4 m VGS = 4.5V, ID = 20A Static Characteristics Drain-to-Source Breakdown Voltage Drain-to-Source Leakage Current Drain-to-Source On Resistance — 2.8 3.5 m gfs — 113 — S VDS = 12.5V, ID = 20A CISS — 1635 — pF VGS = 0V, VDS = 12.5V, f = 1 MHz Output Capacitance COSS — 730 — pF VGS = 0V, VDS = 12.5V, f = 1 MHz Reverse Transfer Capacitance CRSS — 160 — pF VGS = 0V, VDS = 12.5V, f = 1 MHz Total Gate Charge QG — 17 22 nC VDS = 12.5V, ID = 20A, VGS = 4.5V Gate-to-Drain Charge QGD — 6.7 — nC VDS = 12.5V, ID = 20A Gate-to-Source Charge QGS — 3.2 — nC VDS = 12.5V, ID = 20A Gate Charge at VGS(TH) QG(TH) — 2.1 — nC VDS = 12.5V, ID = 20A Output Charge QOSS — 14.3 — nC VDS = 12.5V, VGS = 0 Turn-On Delay Time td(on) — 5 — ns VDS = 12.5V, VGS = 4.5V, ID = 20A, RG = 2 tr — 17 — ns VDS = 12.5V, VGS = 4.5V, ID = 20A, RG = 2 td(off) — 14 — ns VDS = 12.5V, VGS = 4.5V, ID = 20A, RG = 2 tf — 16 — ns VDS = 12.5V, VGS = 4.5V, ID = 20A, RG = 2 RG — 1.2 — Transconductance VGS = 10V, ID = 20A Dynamic Characteristics Input Capacitance Rise Time Turn-Off Delay Time Fall Time Series Gate Resistance DS200002328B-page 4 2013 Microchip Technology Inc. MCP87030 DC ELECTRICAL CHARACTERISTICS (CONTINUED) Electrical Characteristics: Unless otherwise indicated, TA = +25°C Parameters Sym. Min. Typ. Max. Units Conditions Diode Forward Voltage VFD — 0.8 1 V Reverse Recovery Charge QRR — 32 — nC IS = 20A, di/dt = 300 A/µs trr — 20 — ns IS = 20A, di/dt = 300 A/µs EAS 112.5 — — mJ ID = 15A, L = 1 mH, RG = 25 Sym. Min. Typ. Max. Units Operating Junction Temperature Range TJ -55 — 150 °C Storage Temperature Range TA -55 — 150 °C Thermal Resistance Junction-to-X, 8L 5x6-PDFN RθJX — — 55 °C/W Note 1 Thermal Resistance Junction-to-Case, 8L 5x6-PDFN RθJC — — 1.2 °C/W Note 2 Diode Characteristics Reverse Recovery Time IS = 20A, VGS = 0V Avalanche Characteristics Avalanche Energy TEMPERATURE CHARACTERISTICS Electrical Characteristics: Unless otherwise indicated, TA = +25°C Parameters Conditions Temperature Ranges Package Thermal Resistances Note 1: 2: RθJX is determined with the device surface mounted on a 4-Layer FR4 PCB, with a 1" x 1" mounting pad of 2 oz. copper. This characteristic is dependent on user’s board design. RθJC is determined using JEDEC 51-14 Method. This characteristic is determined by design. 2013 Microchip Technology Inc. DS200002328B-page 5 MCP87030 2.0 TYPICAL PERFORMANCE CURVES The graphs and tables provided following this note are a statistical summary based on a limited number of samples and are provided for informational purposes only. The performance characteristics listed herein are not tested or guaranteed. In some graphs or tables, the data presented may be outside the specified operating range (e.g., outside specified power supply range) and therefore outside the warranted range. Note: Note: Unless otherwise indicated, TA = +25°C. 80 1.8 ID - D Drain Current (A) Norm malized On-State Resistance VGS = 10V 70 VGS = 4.5V 60 VGS = 3V 50 40 30 VGS = 2.5V 2 5V 20 10 1.4 1.2 1 08 0.8 0.6 0.4 0 0.0 0.2 0.4 0.6 VDS - Drain-to-Source Voltage (V) FIGURE 2-1: Characteristics. Typical Output FIGURE 2-4: vs. Temperature. VGS - Gate--to-Source Voltage (V) 60 50 40 TC = +25°C 30 TC = +125 +125°C C 20 TC = -55°C 10 0 1 1.25 1.5 1.75 2 2.25 2.5 2.75 Typical Transfer Normalized On Resistance ID = 20A 9 VDS = 5V 8 7 6 VDS = 12.5V 5 4 3 2 1 0 3 0 5 10 15 20 25 QG - Gate Charge (nC) FIGURE 2-5: Gate Charge. 30 35 Gate-to-Source Voltage vs. 3.5 10 9 ID = 20A f = 1 MHz VGS = 0V 3 C-C Capacitance (nF) RDS(ON) - On-State Resistance (m) 20 40 60 80 100 120 140 160 10 VGS - Gate-to-Source Voltage (V) FIGURE 2-2: Characteristics. 0 TC - Case Temperature (°C) VDS = 5V 70 -60 -40 -20 0.8 80 ID - D Drain Current (A) ID = 20A VGS = 4.5V 1.6 8 7 6 5 TC = +125°C 4 TC = +25°C 3 2.5 2 CISS 1.5 1 COSS 0.5 2 CRSS 0 0 2 4 6 8 VGS - Gate-to-Source Voltage (V) FIGURE 2-3: Source Voltage. DS200002328B-page 6 10 On Resistance vs. Gate-to- 0 5 10 15 VDS - Drain-to-Source Voltage (V) FIGURE 2-6: Source Voltage. 20 Capacitance vs. Drain-to- 2013 Microchip Technology Inc. MCP87030 Note: Unless otherwise indicated, TA = +25°C. 120 1.7 ID - Drain Current (A) VGS(TH)) - Gate-to-Source Thres shold Voltage (V) ID = 250 μA 1.5 1.3 1.1 0.9 100 VGS = 10V 80 VGS = 4.5V 60 40 20 0.7 0 -75 -50 -25 0 25 50 75 100 125 150 175 TC - Case Temperature (°C) FIGURE 2-7: Gate-to-Source Threshold Voltage vs. Temperature. 0 25 FIGURE 2-10: Temperature. 50 75 100 125 TC - Case Temperature (Û& 150 Maximum Drain Current vs. ZșJA - Normalized Thermal Impedance ISD - Source-to-Drain Current (A) 100 10 1 TC = +125°C 0.1 TC = +25°C 0.01 0.2 0.4 0.6 0.8 VSD - Source-to-Drain Voltage (V) 1.0 FIGURE 2-8: Source-to-Drain Current vs. Source-to-Drain Voltage. 1000 1 ms 10 10 ms 100 ms 1s DC RșJA = 55 °C/W Single Pulse 0.01 0.01 FIGURE 2-9: Area. 0.1 1 10 VDS - Drain-to-Source Voltage (V) 100 Maximum Safe Operating 2013 Microchip Technology Inc. 0.01 0.1 10 t1 - Pulse Duration (s) FIGURE 2-11: Impedance. IAS - Ava alanche Current (A) ID - Drain Current (A) 100 0.1 DC = 0.5 DC = 0.3 DC = 0.1 DC = 0.05 DC = 0.02 DC = 0.01 Single Pulse 1000 Transient Thermal 100 Operation in this range is limited by RDS(on) 1 0.1 0.001 0.001 0.001 0.0 1 10 1 0.01 TC = +150°C TC = +25°C 0.1 1 10 tAV - Avalanche Time (ms) 100 FIGURE 2-12: Single-Pulse Unclamped Inductive Switching. DS200002328B-page 7 VBR(DSS) - B Breakdown Voltage (V) MCP87030 30 ID = 250 μA 29 28 27 26 25 -60 -40 -20 0 20 40 60 80 100 120 140 160 TC - Case Temperature(°C) FIGURE 2-13: Drain-to-Source Breakdown Voltage vs. Temperature. DS200002328B-page 8 2013 Microchip Technology Inc. MCP87030 3.0 PIN DESCRIPTIONS The descriptions of the pins are listed in Table 3-1. TABLE 3-1: PIN FUNCTION TABLE MCP87030 5x6 PDFN Symbol Description 1, 2, 3 S Source pin 4 G Gate pin 5, 6, 7, 8 D Drain pin, including exposed thermal pad 2013 Microchip Technology Inc. DS200002328B-page 9 MCP87030 4.0 PACKAGING INFORMATION 4.1 Package Marking Information* 8-Lead PDFN (5x6x1.0 mm) NNN PIN 1 Example 87030 U/MF e ^^3 1234 256 PIN 1 *RoHS compliant using EU-RoHS exemption: 7(a) – Lead in high-melting-temperature-type solders (i.e., lead-based alloys containing 85% by weight or more lead) can be found on the outer packaging for this package. Legend: XX...X Y YY WW NNN e3 * Note: DS200002328B-page 10 Customer-specific information Year code (last digit of calendar year) Year code (last 2 digits of calendar year) Week code (week of January 1 is week ‘01’) Alphanumeric traceability code Pb-free JEDEC designator for Matte Tin (Sn) This package is Pb-free. The Pb-free JEDEC designator ( e3 ) can be found on the outer packaging for this package. In the event the full Microchip part number cannot be marked on one line, it will be carried over to the next line, thus limiting the number of available characters for customer-specific information. 2013 Microchip Technology Inc. MCP87030 2013 Microchip Technology Inc. DS200002328B-page 11 MCP87030 DS200002328B-page 12 2013 Microchip Technology Inc. MCP87030 2013 Microchip Technology Inc. DS200002328B-page 13 MCP87030 DS200002328B-page 14 2013 Microchip Technology Inc. MCP87030 APPENDIX A: REVISION HISTORY Revision B (July 2013) The following is the list of modifications. 1. 2. Updated the Thermal Resistances maximum values in the Temperature Characteristics table. Added Figure 2-9, Figure 2-10 and Figure 2-11. Revision A (January 2013) • Original Release of this Document. 2013 Microchip Technology Inc. DS200002328B-page 15 MCP87030 PRODUCT IDENTIFICATION SYSTEM To order or obtain information, e.g., on pricing or delivery, refer to the factory or the listed sales office. PART NO. Device Device: X Tape and Reel Option MCP87030T: Temperature Range: U Package: X /XX Temperature Range Package Examples: a) MCP87030T-U/MF: Tape and Reel, Ultra-High Temperature, 8LD PDFN package N-Channel Power MOSFET (Tape and Reel) = -55°C to +150°C (Ultra High) MF = 8-Lead High Power Dual Flatpack, No Lead Package (5x6x1.0 mm Body) (PDFN), 8-lead 2013 Microchip Technology Inc. DS200002328B-page 16 Note the following details of the code protection feature on Microchip devices: • Microchip products meet the specification contained in their particular Microchip Data Sheet. • Microchip believes that its family of products is one of the most secure families of its kind on the market today, when used in the intended manner and under normal conditions. • There are dishonest and possibly illegal methods used to breach the code protection feature. All of these methods, to our knowledge, require using the Microchip products in a manner outside the operating specifications contained in Microchip’s Data Sheets. Most likely, the person doing so is engaged in theft of intellectual property. • Microchip is willing to work with the customer who is concerned about the integrity of their code. • Neither Microchip nor any other semiconductor manufacturer can guarantee the security of their code. Code protection does not mean that we are guaranteeing the product as “unbreakable.” Code protection is constantly evolving. We at Microchip are committed to continuously improving the code protection features of our products. Attempts to break Microchip’s code protection feature may be a violation of the Digital Millennium Copyright Act. If such acts allow unauthorized access to your software or other copyrighted work, you may have a right to sue for relief under that Act. Information contained in this publication regarding device applications and the like is provided only for your convenience and may be superseded by updates. It is your responsibility to ensure that your application meets with your specifications. MICROCHIP MAKES NO REPRESENTATIONS OR WARRANTIES OF ANY KIND WHETHER EXPRESS OR IMPLIED, WRITTEN OR ORAL, STATUTORY OR OTHERWISE, RELATED TO THE INFORMATION, INCLUDING BUT NOT LIMITED TO ITS CONDITION, QUALITY, PERFORMANCE, MERCHANTABILITY OR FITNESS FOR PURPOSE. Microchip disclaims all liability arising from this information and its use. Use of Microchip devices in life support and/or safety applications is entirely at the buyer’s risk, and the buyer agrees to defend, indemnify and hold harmless Microchip from any and all damages, claims, suits, or expenses resulting from such use. No licenses are conveyed, implicitly or otherwise, under any Microchip intellectual property rights. Trademarks The Microchip name and logo, the Microchip logo, dsPIC, FlashFlex, KEELOQ, KEELOQ logo, MPLAB, PIC, PICmicro, PICSTART, PIC32 logo, rfPIC, SST, SST Logo, SuperFlash and UNI/O are registered trademarks of Microchip Technology Incorporated in the U.S.A. and other countries. FilterLab, Hampshire, HI-TECH C, Linear Active Thermistor, MTP, SEEVAL and The Embedded Control Solutions Company are registered trademarks of Microchip Technology Incorporated in the U.S.A. Silicon Storage Technology is a registered trademark of Microchip Technology Inc. in other countries. Analog-for-the-Digital Age, Application Maestro, BodyCom, chipKIT, chipKIT logo, CodeGuard, dsPICDEM, dsPICDEM.net, dsPICworks, dsSPEAK, ECAN, ECONOMONITOR, FanSense, HI-TIDE, In-Circuit Serial Programming, ICSP, Mindi, MiWi, MPASM, MPF, MPLAB Certified logo, MPLIB, MPLINK, mTouch, Omniscient Code Generation, PICC, PICC-18, PICDEM, PICDEM.net, PICkit, PICtail, REAL ICE, rfLAB, Select Mode, SQI, Serial Quad I/O, Total Endurance, TSHARC, UniWinDriver, WiperLock, ZENA and Z-Scale are trademarks of Microchip Technology Incorporated in the U.S.A. and other countries. SQTP is a service mark of Microchip Technology Incorporated in the U.S.A. GestIC and ULPP are registered trademarks of Microchip Technology Germany II GmbH & Co. KG, a subsidiary of Microchip Technology Inc., in other countries. All other trademarks mentioned herein are property of their respective companies. © 2013, Microchip Technology Incorporated, Printed in the U.S.A., All Rights Reserved. Printed on recycled paper. ISBN: 978-1-62077-395-6 QUALITY MANAGEMENT SYSTEM CERTIFIED BY DNV == ISO/TS 16949 == 2013 Microchip Technology Inc. Microchip received ISO/TS-16949:2009 certification for its worldwide headquarters, design and wafer fabrication facilities in Chandler and Tempe, Arizona; Gresham, Oregon and design centers in California and India. The Company’s quality system processes and procedures are for its PIC® MCUs and dsPIC® DSCs, KEELOQ® code hopping devices, Serial EEPROMs, microperipherals, nonvolatile memory and analog products. In addition, Microchip’s quality system for the design and manufacture of development systems is ISO 9001:2000 certified. DS200002328B-page 17 Worldwide Sales and Service AMERICAS ASIA/PACIFIC ASIA/PACIFIC EUROPE Corporate Office 2355 West Chandler Blvd. Chandler, AZ 85224-6199 Tel: 480-792-7200 Fax: 480-792-7277 Technical Support: http://www.microchip.com/ support Web Address: www.microchip.com Asia Pacific Office Suites 3707-14, 37th Floor Tower 6, The Gateway Harbour City, Kowloon Hong Kong Tel: 852-2401-1200 Fax: 852-2401-3431 India - Bangalore Tel: 91-80-3090-4444 Fax: 91-80-3090-4123 India - New Delhi Tel: 91-11-4160-8631 Fax: 91-11-4160-8632 Austria - Wels Tel: 43-7242-2244-39 Fax: 43-7242-2244-393 Denmark - Copenhagen Tel: 45-4450-2828 Fax: 45-4485-2829 India - Pune Tel: 91-20-2566-1512 Fax: 91-20-2566-1513 France - Paris Tel: 33-1-69-53-63-20 Fax: 33-1-69-30-90-79 Japan - Osaka Tel: 81-6-6152-7160 Fax: 81-6-6152-9310 Germany - Munich Tel: 49-89-627-144-0 Fax: 49-89-627-144-44 Atlanta Duluth, GA Tel: 678-957-9614 Fax: 678-957-1455 Boston Westborough, MA Tel: 774-760-0087 Fax: 774-760-0088 Chicago Itasca, IL Tel: 630-285-0071 Fax: 630-285-0075 Cleveland Independence, OH Tel: 216-447-0464 Fax: 216-447-0643 Dallas Addison, TX Tel: 972-818-7423 Fax: 972-818-2924 Detroit Farmington Hills, MI Tel: 248-538-2250 Fax: 248-538-2260 Indianapolis Noblesville, IN Tel: 317-773-8323 Fax: 317-773-5453 Los Angeles Mission Viejo, CA Tel: 949-462-9523 Fax: 949-462-9608 Santa Clara Santa Clara, CA Tel: 408-961-6444 Fax: 408-961-6445 Toronto Mississauga, Ontario, Canada Tel: 905-673-0699 Fax: 905-673-6509 Australia - Sydney Tel: 61-2-9868-6733 Fax: 61-2-9868-6755 China - Beijing Tel: 86-10-8569-7000 Fax: 86-10-8528-2104 China - Chengdu Tel: 86-28-8665-5511 Fax: 86-28-8665-7889 China - Chongqing Tel: 86-23-8980-9588 Fax: 86-23-8980-9500 Korea - Daegu Tel: 82-53-744-4301 Fax: 82-53-744-4302 China - Hangzhou Tel: 86-571-2819-3187 Fax: 86-571-2819-3189 Korea - Seoul Tel: 82-2-554-7200 Fax: 82-2-558-5932 or 82-2-558-5934 China - Hong Kong SAR Tel: 852-2943-5100 Fax: 852-2401-3431 Malaysia - Kuala Lumpur Tel: 60-3-6201-9857 Fax: 60-3-6201-9859 China - Nanjing Tel: 86-25-8473-2460 Fax: 86-25-8473-2470 Malaysia - Penang Tel: 60-4-227-8870 Fax: 60-4-227-4068 China - Qingdao Tel: 86-532-8502-7355 Fax: 86-532-8502-7205 Philippines - Manila Tel: 63-2-634-9065 Fax: 63-2-634-9069 China - Shanghai Tel: 86-21-5407-5533 Fax: 86-21-5407-5066 Singapore Tel: 65-6334-8870 Fax: 65-6334-8850 China - Shenyang Tel: 86-24-2334-2829 Fax: 86-24-2334-2393 Taiwan - Hsin Chu Tel: 886-3-5778-366 Fax: 886-3-5770-955 China - Shenzhen Tel: 86-755-8864-2200 Fax: 86-755-8203-1760 Taiwan - Kaohsiung Tel: 886-7-213-7828 Fax: 886-7-330-9305 China - Wuhan Tel: 86-27-5980-5300 Fax: 86-27-5980-5118 Taiwan - Taipei Tel: 886-2-2508-8600 Fax: 886-2-2508-0102 China - Xian Tel: 86-29-8833-7252 Fax: 86-29-8833-7256 Thailand - Bangkok Tel: 66-2-694-1351 Fax: 66-2-694-1350 Italy - Milan Tel: 39-0331-742611 Fax: 39-0331-466781 Netherlands - Drunen Tel: 31-416-690399 Fax: 31-416-690340 Spain - Madrid Tel: 34-91-708-08-90 Fax: 34-91-708-08-91 UK - Wokingham Tel: 44-118-921-5869 Fax: 44-118-921-5820 China - Xiamen Tel: 86-592-2388138 Fax: 86-592-2388130 China - Zhuhai Tel: 86-756-3210040 Fax: 86-756-3210049 DS200002328B-page 18 Japan - Tokyo Tel: 81-3-6880- 3770 Fax: 81-3-6880-3771 11/29/12 2013 Microchip Technology Inc.