MCP87130 High-Speed N-Channel Power MOSFET Features: Description: • Low Drain-to-Source On Resistance (RDS(ON)) • Low Total Gate Charge (QG) and Gate-to-Drain Charge (QGD) • Low Series Gate Resistance (RG) • Capable of Short Dead-Time Operation • RoHS Compliant The MCP87130 is an N-Channel power MOSFET in a popular PDFN 5 mm x 6 mm package as well as a PDFN 3.3 mm x 3.3 mm package. Advanced packaging and silicon processing technologies allow the MCP87130 to achieve a low QG for a given RDS(ON) value, resulting in a low Figure of Merit (FOM). Combined with low RG, the low FOM of the MCP87130 allows high efficiency power conversion with reduced switching and conduction losses. Applications: • Point-of-Load DC-DC Converters • High Efficiency Power Management in Servers, Networking, and Automotive Applications Package Type PDFN 5 x 6 PDFN 3.3 x 3.3 S 1 8 D S 2 7 D S 3 6 D G 4 5 D Product Summary Table: Unless otherwise indicated, TA = +25˚C. Parameters Sym. Min. Typ. Max. Units Conditions Drain-to-Source Breakdown Voltage BVDSS 25 — — V VGS = 0V, ID = 250 µA Gate-to-Source Threshold Voltage VGS(TH) 1.1 1.35 1.7 V VDS = VGS, ID = 250 µA Drain-to-Source On Resistance RDS(ON) — 13.8 16.5 mΩ — 11.3 13.5 mΩ VGS = 10V, ID = 10A QG — 5.5 8 nC VDS = 12.5V, ID = 10A, VGS = 4.5V QGD — 2.6 — nC VDS = 12.5V, ID = 10A RG — 1.7 — Ω Thermal Resistance Junction-to-X, 8L 3.3x3.3-PDFN RθJX — — 73 Thermal Resistance Junction-to-Case, 8L 3.3x3.3-PDFN RθJC — — 3.3 °C/W Note 2 Thermal Resistance Junction-to-X, 8L 5x6-PDFN RθJX — — 58 °C/W Note 1 Thermal Resistance Junction-to-Case, 8L 5x6-PDFN RθJC — — 3.3 °C/W Note 2 Operating Characteristics Total Gate Charge Gate-to-Drain Charge Series Gate Resistance VGS = 4.5V, ID = 10A Thermal Characteristics Note 1: 2: °C/W Note 1 RθJX is determined with the device surface mounted on a 4-Layer FR4 PCB, with a 1” x 1” mounting pad of 2 oz. copper. This characteristic is dependent on user’s board design. RθJC is determined using JEDEC 51-14 Method. This characteristic is determined by design. 2013 Microchip Technology Inc. DS20005159B-page 1 MCP87130 1.0 † Notice: Stresses above those listed under “Maximum Ratings” may cause permanent damage to the device. This is a stress rating only and functional operation of the device at those or any other conditions above those indicated in the operational sections of this specification is not intended. Exposure to maximum rating conditions for extended periods may affect device reliability. ELECTRICAL CHARACTERISTICS Absolute Maximum Ratings † VDS .......................................................................+25V VGS ........................................................... +10.0V / -8V ID, Continuous .............................................................. 8L 5x6-PDFN ............................. 43A, TC = +25°C 8L 3.3x3.3-PDFN ....................... 43A, TC = +25°C PD ................................................................................. 8L 5x6-PDFN ........................... 2.1W, TA = +25°C 8L 3.3x3.3-PDFN .......... ...........1.7W, TA = +25°C TJ, TSTG.............................................. -55˚C to +150˚C EAS Avalanche Energy ....................................... 50 mJ ID = 10A, L = 1 mH, RG = 25Ω DC ELECTRICAL CHARACTERISTICS Electrical Characteristics: Unless otherwise indicated, TA = +25°C Parameters Sym. Min. Typ. Max. Units Conditions BVDSS 25 — — V Drain-to-Source Leakage Current IDSS — — 1 µA VGS = 0V, VDS = 20V Gate-to-Source Leakage Current IGSS — — 100 nA VDS = 0V, VGS = 10V/-8V Gate-to-Source Threshold Voltage VGS(TH) 1.1 1.35 1.7 V VDS = VGS, ID = 250 µA Drain-to-Source On Resistance RDS(ON) — 17.3 — m VGS = 3.3V, ID = 10A — 13.8 16.5 m VGS = 4.5V, ID = 10A — 11.3 13.5 m VGS = 10V, ID = 10A gfs — 40 — S VDS = 12.5V, ID = 10A Static Characteristics Drain-to-Source Breakdown Voltage Transconductance VGS = 0V, ID = 250 µA Dynamic Characteristics Input Capacitance CISS — 400 — pF VGS = 0V, VDS = 12.5V, f = 1 MHz Output Capacitance COSS — 200 — pF VGS = 0V, VDS = 12.5V, f = 1 MHz Reverse Transfer Capacitance CRSS — 60 — pF VGS = 0V, VDS = 12.5V, f = 1 MHz Total Gate Charge QG — 5.5 8 nC VDS = 12.5V, ID = 10A, VGS = 4.5V Gate-to-Drain Charge QGD — 2.6 — nC VDS = 12.5V, ID = 10A Gate-to-Source Charge QGS — 0.9 — nC VDS = 12.5V, ID = 10A Gate Charge at VGS(TH) QG(TH) — 0.6 — nC VDS = 12.5V, ID = 10A Output Charge QOSS — 3.7 — nC VDS = 12.5V, VGS = 0 Turn-On Delay Time td(on) — 2.2 — ns VDS = 12.5V, VGS = 4.5V, ID = 10A, RG = 2 tr — 5.4 — ns VDS = 12.5V, VGS = 4.5V, ID = 10A, RG = 2 td(off) — 4.2 — ns VDS = 12.5V, VGS = 4.5V, ID = 10A, RG = 2 tf — 2.1 — ns VDS = 12.5V, VGS = 4.5V, ID = 10A, RG = 2 RG — 1.7 — Rise Time Turn-Off Delay Time Fall Time Series Gate Resistance DS20005159B-page 2 2013 Microchip Technology Inc. MCP87130 DC ELECTRICAL CHARACTERISTICS (CONTINUED) Electrical Characteristics: Unless otherwise indicated, TA = +25°C Parameters Sym. Min. Typ. Max. Units Conditions Diode Forward Voltage VFD — 0.8 1 V Reverse Recovery Charge QRR — 7 — nC IS = 10A, di/dt = 300 A/µs trr — 9.5 — nS IS = 10A, di/dt = 300 A/µs EAS 4.5 — — mJ ID = 3A, L = 1 mH, RG = 25 Sym. Min. Typ. Max. Units Operating Junction Temperature Range TJ -55 — 150 °C Storage Temperature Range TA -55 — 150 °C Thermal Resistance Junction-to-X, 8L 3.3x3.3-PDFN RθJX — — 73 °C/W Note 1 Thermal Resistance Junction-to-Case, 8L 3.3x3.3-PDFN RθJC — — 3.3 °C/W Note 2 Thermal Resistance Junction-to-X, 8L 5x6-PDFN RθJX — — 58 °C/W Note 1 Thermal Resistance Junction-to-Case, 8L 5x6-PDFN RθJC — — 3.3 °C/W Note 2 Diode Characteristics Reverse Recovery Time IS = 10A, VGS = 0V Avalanche Characteristics Avalanche Energy TEMPERATURE CHARACTERISTICS Electrical Characteristics: Unless otherwise indicated, TA = +25°C Parameters Conditions Temperature Ranges Package Thermal Resistances Note 1: 2: RθJX is determined with the device surface mounted on a 4-Layer FR4 PCB, with a 1” x 1” mounting pad of 2 oz. copper. This characteristic is dependent on user’s board design. RθJC is determined using JEDEC 51-14 Method. This characteristic is determined by design. 2013 Microchip Technology Inc. DS20005159B-page 3 MCP87130 2.0 TYPICAL PERFORMANCE CURVES The graphs and tables provided following this note are a statistical summary based on a limited number of samples and are provided for informational purposes only. The performance characteristics listed herein are not tested or guaranteed. In some graphs or tables, the data presented may be outside the specified operating range (e.g., outside specified power supply range) and therefore outside the warranted range. Note: Note: Unless otherwise indicated, TA = +25°C. Normalized d On-State Resistance 40 ID - D Drain Current (A) VGS = 10V VGS = 4.5V 30 VGS = 3V 20 VGS = 2.5V 10 0 1.0 2.0 VDS - Drain-to-Source Voltage (V) FIGURE 2-1: Characteristics. VDS = 5V 30 20 TC = +25°C 10 0 1.25 1.5 RDS(ON) - On-S State Resistance (m) TC = -55°C 1.75 2 2.25 2.5 2.75 3 VGS - Gate-to-Source Voltage (V) FIGURE 2-2: Characteristics. 1.2 1 0.8 0.6 0.4 -60 -40 -20 0 20 40 60 80 100 120 140 160 TC - Case Temperature (°C) FIGURE 2-4: vs. Temperature. Typical Output TC = +125°C 1.4 3.0 10 VDS = 5V 8 7 6 VDS = 12.5V 5 4 3 2 1 0 0 2 FIGURE 2-5: Gate Charge. Typical Transfer Normalized On Resistance ID = 10A 9 3.25 4 6 8 QG - Gate Charge (nC) 10 12 Gate-to-Source Voltage vs. 0.8 26 ID = 10A 24 f = 1 MHz VGS = 0V 0.7 C - Ca apacitance (nF) ID - D Drain Current (A) 40 ID = 10A VGS = 4.5V 1.6 VGS - Gate--to-Source Voltage (V) 0.0 1.8 22 20 TC = +125°C 18 16 14 TC = +25°C 12 0.6 0.5 CISS 0.4 0.3 COSS 0.2 0.1 10 CRSS 0 0 2 4 6 8 VGS - Gate-to-Source Voltage (V) FIGURE 2-3: Source Voltage. DS20005159B-page 4 10 On Resistance vs. Gate-to- 0 5 10 15 VDS - Drain-to-Source Voltage (V) FIGURE 2-6: Source Voltage. 20 Capacitance vs. Drain-to- 2013 Microchip Technology Inc. MCP87130 70 1.7 ID = 250 μA 60 ID - Drain Current (A) VGS(TH) - Gatte-to-Source Threshold Voltage (V) Note: Unless otherwise indicated, TA = +25°C. 1.5 1.3 1.1 50 40 VGS = 4.5V 20 10 0 0.9 0 -75 -50 -25 0 25 50 75 100 125 150 175 TC - Case Temperature (°C) FIGURE 2-7: Gate-to-Source Threshold Voltage vs. Temperature. 25 75 100 125 150 FIGURE 2-10: Maximum Drain Current vs. Temperature 5x6-PDFN (MCP87130T-U/MF). 100 10 1 TC = +125°C TC = +25°C 0.1 0.01 0.001 0.0 0.2 0.4 0.6 0.8 1 0.1 DC = 0.5 DC = 0.3 DC = 0.1 DC = 0.05 DC = 0.02 DC = 0.01 Single Pulse 0.01 0.001 0.001 1.0 VSD - Source-to-Drain Voltage (V) FIGURE 2-8: Source-to-Drain Current vs. Source-to-Drain Voltage. 1 ms 10 ms 100 ms 1s 0.1 RșJA = 58 °C/W Single Pulse 0.01 0.01 0.1 1 10 VDS - Drain-to-Source Voltage (V) DC 100 10 1 ms 10 ms 100 ms 1 1s 0.1 DC RșJA = 73 °C/W Single Pulse 100 FIGURE 2-9: Maximum Safe Operating Area 5x6-PDFN (MCP87130T-U/MF). 2013 Microchip Technology Inc. ID - Drain Current (A) Operation in this range is limited by RDS(on) 100 1 1000 1000 Operation in this range is limited by RDS(on) 10 0.1 10 t1 - Pulse Duration (s) FIGURE 2-11: Transient Thermal Impedance 5x6-PDFN (MCP87130T-U/MF). 1000 ID - Drain Current (A) 50 TC - Case Temperature (Û& ZșJA - Normalized Thermal Impedance ISD - Sourc ce-to-Drain Current (A) VGS = 10V 30 0.01 0.01 0.1 1 10 VDS - Drain-to-Source Voltage (V) 100 FIGURE 2-12: Maximum Safe Operating Area 3.3x3.3-PDFN (MCP87130T-U/LC). DS20005159B-page 5 MCP87130 VBR(DSS) - B Breakdown Voltage (V) 70 ID - Drain Current (A) 60 50 40 VGS = 10V 30 VGS = 4.5V 20 10 0 0 25 50 75 100 125 150 TC - Case Temperature (Û& ID = 250 μA 30 29 28 27 26 25 -60 -40 -20 0 20 40 60 80 100 120 140 160 TC - Case Temperature(°C) FIGURE 2-13: Maximum Drain Current vs. Temperature 3.3x3.3-PDFN (MCP87130T-U/LC). ZșJA - Normalized Thermal Impedance 31 FIGURE 2-16: Drain-to-Source Breakdown Voltage vs. Temperature. 1 0.1 DC = 0.5 DC = 0.3 DC = 0.1 DC = 0.05 DC = 0.02 DC = 0.01 Single Pulse 0.01 0.001 0.001 0.1 10 t1 - Pulse Duration (s) 1000 IAS - Ava alanche Current (A) FIGURE 2-14: Transient Thermal Impedance 3.3x3.3-PDFN (MCP87130T-U/LC). 10 TC = +25°C TC = +150°C 1 0.01 0.1 1 10 tAV - Avalanche Time (ms) FIGURE 2-15: Single-Pulse Unclamped Inductive Switching. DS20005159B-page 6 2013 Microchip Technology Inc. MCP87130 3.0 PIN DESCRIPTIONS The descriptions of the pins are listed in Table 3-1. TABLE 3-1: PINOUT DESCRIPTION FOR THE MCP87130 MCP87130 5x6 PDFN, 3.3 x 3.3 PDFN Pin Type Function 1, 2, 3 S Source pin 4 G Gate pin 5, 6, 7, 8 D Drain pin, including exposed thermal pad 2013 Microchip Technology Inc. DS20005159B-page 7 MCP87130 4.0 PACKAGING INFORMATION 4.1 Package Marking Information* 8-Lead PDFN (3.3x3.3x1.0 mm) Example 130U 1236 256 8-Lead PDFN (5x6x1.0 mm) Example 87130 U/MF e^^3 1236 256 NNN PIN 1 PIN 1 *RoHS compliant using EU-RoHS exemption: 7(a) - Lead in high-melting-temperature-type solders (i.e. lead-based alloys containing 85% by weight or more lead) can be found on the outer packaging for this package. Legend: XX...X Y YY WW NNN e3 * Note: DS20005159B-page 8 Customer-specific information Year code (last digit of calendar year) Year code (last 2 digits of calendar year) Week code (week of January 1 is week ‘01’) Alphanumeric traceability code Pb-free JEDEC designator for Matte Tin (Sn) This package is Pb-free. The Pb-free JEDEC designator ( e3 ) can be found on the outer packaging for this package. In the event the full Microchip part number cannot be marked on one line, it will be carried over to the next line, thus limiting the number of available characters for customer-specific information. 2013 Microchip Technology Inc. MCP87130 2013 Microchip Technology Inc. DS20005159B-page 9 MCP87130 DS20005159B-page 10 2013 Microchip Technology Inc. MCP87130 2013 Microchip Technology Inc. DS20005159B-page 11 MCP87130 DS20005159B-page 12 2013 Microchip Technology Inc. MCP87130 2013 Microchip Technology Inc. DS20005159B-page 13 MCP87130 DS20005159B-page 14 2013 Microchip Technology Inc. MCP87130 APPENDIX A: REVISION HISTORY Revision B (August 2013) The following is the list of modifications. 1. 2. Updated the Thermal Resistances maximum values in the Temperature Characteristics table. Added Figure 2-9, Figure 2-10, Figure 2-11, Figure 2-12, Figure 2-13 and Figure 2-14. Revision A (January 2013) • Original Release of this Document. 2013 Microchip Technology Inc. DS20005159B-page 15 MCP87130 PRODUCT IDENTIFICATION SYSTEM To order or obtain information, e.g., on pricing or delivery, refer to the factory or the listed sales office. PART NO. X /XX Device Temperature Range Package Device: MCP87130T: Temperature Range: U Package: N-Channel power MOSFET (Tape and Reel) (PDFN) Example: a) MCP87130T-U/LC: b) MCP87130T-U/MF: Tape and Reel, Ultra-High Temperature, 8LD 3.3x3.3 PDFN package Tape and Reel, Ultra-High Temperature, 8LD 5x6 PDFN package = -55°C to +150°C (Ultra High) LC = High-Power Dual Flatpack, No Lead Package (3.3x3.3x1.0 mm Body) (PDFN), 8-lead MF = High-Power Dual Flatpack, No Lead Package (5x6x1.0 mm Body) (PDFN), 8-lead DS20005159B-page 16 2013 Microchip Technology Inc. Note the following details of the code protection feature on Microchip devices: • Microchip products meet the specification contained in their particular Microchip Data Sheet. • Microchip believes that its family of products is one of the most secure families of its kind on the market today, when used in the intended manner and under normal conditions. • There are dishonest and possibly illegal methods used to breach the code protection feature. All of these methods, to our knowledge, require using the Microchip products in a manner outside the operating specifications contained in Microchip’s Data Sheets. Most likely, the person doing so is engaged in theft of intellectual property. • Microchip is willing to work with the customer who is concerned about the integrity of their code. • Neither Microchip nor any other semiconductor manufacturer can guarantee the security of their code. Code protection does not mean that we are guaranteeing the product as “unbreakable.” Code protection is constantly evolving. We at Microchip are committed to continuously improving the code protection features of our products. Attempts to break Microchip’s code protection feature may be a violation of the Digital Millennium Copyright Act. If such acts allow unauthorized access to your software or other copyrighted work, you may have a right to sue for relief under that Act. Information contained in this publication regarding device applications and the like is provided only for your convenience and may be superseded by updates. It is your responsibility to ensure that your application meets with your specifications. MICROCHIP MAKES NO REPRESENTATIONS OR WARRANTIES OF ANY KIND WHETHER EXPRESS OR IMPLIED, WRITTEN OR ORAL, STATUTORY OR OTHERWISE, RELATED TO THE INFORMATION, INCLUDING BUT NOT LIMITED TO ITS CONDITION, QUALITY, PERFORMANCE, MERCHANTABILITY OR FITNESS FOR PURPOSE. Microchip disclaims all liability arising from this information and its use. Use of Microchip devices in life support and/or safety applications is entirely at the buyer’s risk, and the buyer agrees to defend, indemnify and hold harmless Microchip from any and all damages, claims, suits, or expenses resulting from such use. No licenses are conveyed, implicitly or otherwise, under any Microchip intellectual property rights. Trademarks The Microchip name and logo, the Microchip logo, dsPIC, FlashFlex, KEELOQ, KEELOQ logo, MPLAB, PIC, PICmicro, PICSTART, PIC32 logo, rfPIC, SST, SST Logo, SuperFlash and UNI/O are registered trademarks of Microchip Technology Incorporated in the U.S.A. and other countries. FilterLab, Hampshire, HI-TECH C, Linear Active Thermistor, MTP, SEEVAL and The Embedded Control Solutions Company are registered trademarks of Microchip Technology Incorporated in the U.S.A. Silicon Storage Technology is a registered trademark of Microchip Technology Inc. in other countries. Analog-for-the-Digital Age, Application Maestro, BodyCom, chipKIT, chipKIT logo, CodeGuard, dsPICDEM, dsPICDEM.net, dsPICworks, dsSPEAK, ECAN, ECONOMONITOR, FanSense, HI-TIDE, In-Circuit Serial Programming, ICSP, Mindi, MiWi, MPASM, MPF, MPLAB Certified logo, MPLIB, MPLINK, mTouch, Omniscient Code Generation, PICC, PICC-18, PICDEM, PICDEM.net, PICkit, PICtail, REAL ICE, rfLAB, Select Mode, SQI, Serial Quad I/O, Total Endurance, TSHARC, UniWinDriver, WiperLock, ZENA and Z-Scale are trademarks of Microchip Technology Incorporated in the U.S.A. and other countries. SQTP is a service mark of Microchip Technology Incorporated in the U.S.A. GestIC and ULPP are registered trademarks of Microchip Technology Germany II GmbH & Co. KG, a subsidiary of Microchip Technology Inc., in other countries. All other trademarks mentioned herein are property of their respective companies. © 2013, Microchip Technology Incorporated, Printed in the U.S.A., All Rights Reserved. Printed on recycled paper. ISBN: 978-1-62077-423-6 QUALITY MANAGEMENT SYSTEM CERTIFIED BY DNV == ISO/TS 16949 == 2013 Microchip Technology Inc. Microchip received ISO/TS-16949:2009 certification for its worldwide headquarters, design and wafer fabrication facilities in Chandler and Tempe, Arizona; Gresham, Oregon and design centers in California and India. The Company’s quality system processes and procedures are for its PIC® MCUs and dsPIC® DSCs, KEELOQ® code hopping devices, Serial EEPROMs, microperipherals, nonvolatile memory and analog products. In addition, Microchip’s quality system for the design and manufacture of development systems is ISO 9001:2000 certified. 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