Hall Sensor KSY 44 Preliminary Data Features • • • • • • • • • High sensitivity High operating temperature Small linearity error Low offset voltage Low TC of sensitivity Specified TC of offset voltage Low inductive zero component Package thickness 0.7 mm Connections from one side of the package Typical Applications • Current and power measurement • Magnetic field measurement • Control of brushless DC motors Rotation and position sensing • Measurement of diaphragm • Movement for pressure sensing Dimensions in mm Type Marking Ordering Code KSY 44 44 Q62705-K265 The KSY 44 is a MOVPE1) Hall sensor in a mono-crystalline GaAs material, built into an extremely flat plastic package (SOH). It is outstanding for a high magnetic sensitivity and low temperature coefficients. The 0.35 × 0.35 mm2 chip is mounted onto a non-magnetic leadframe. 1) Metal Organic Vapour Phase Epitaxy Semiconductor Group 1 1998-11-13 KSY 44 Maximum Ratings Parameter Symbol Value Unit Operating temperature TA Tstg I1 GthA GthC – 40…+ 175 °C – 50…+ 180 °C 10 mA ≥ 1.5 ≥ 2.2 mW/K mW/K 7 mA Open-circuit sensitivity I1N KB0 150…265 V/AT Open-circuit Hall voltage V20 105…185 mV Ohmic offset voltage I1 = I1N, B = 0 T VR0 ≤ ± 15 mV Linearity of Hall voltage B = 0…0.5 T B = 0…1.0 T FL ≤ ± 0.2 ≤ ± 0.7 % % R10 R20 TCV20 600…900 Ω 1000…1500 Ω ∼ – 0.03 %/K Temperature coefficient of the internal resistance, B = 0 T TCR10, R20 ∼ + 0.3 %/K Temperature coefficient of ohmic offset voltage, I1 = I1N, B = 0 T TCVR0 ∼ – 0.3 %/K Inductive zero component, I1N = 0 0.16 cm2 Switch-on drift of the ohmic offset voltage I1 = I1N, B = 0 T A21) dV02) ∆V03) ≤ 0.3 ≤ 0.1 mV mV Noise figure F ∼ 10 dB Storage temperature Supply current Thermal conductivity soldered, in air Characteristics (TA = 25 °C) Nominal supply current I1 = I1N, B = 0.1 T Input resistance Output resistance B=0 T B=0 T Temperature coefficient of the open-circuit Hall voltage I1 = I1N, B = 0.1 T 1) With time varying induction there exists an inductive voltage Vind between the Hall voltage terminals (supply current I1 = 0): Vind = A2 × dB/dt × 10-4 with V(V), A2 (cm2), B(T), t(s) 2) dV0 = V0(t = 1s) – V0(t = 0.1 s) 3) ∆V0 = V0(t = 3m) – V0(t = 1 s) Semiconductor Group 2 1998-11-13 KSY 44 Connection of a Hall Sensor with a Power Source Since the voltage on the component must not exceed 10 V, the connection to the constant current supply should only be done via a short circuit by-pass. The by-pass circuit-breaker shall not be opened before turning on the power source, in order to avoid damage to the Hall sensor due to power peaks. Polarity of Hall Voltage Semiconductor Group 3 1998-11-13