BAR89... Silicon PIN Diode Optimized for antenna switches in hand held applications Very low capacitance at zero volts reverse bias at frequencies above 1GHz (typ. 0.19 pF) Low forward resistance (typ. 0.8 @ IF = 10mA) Very low signal distortion BAR89-02L 1 2 Type BAR89-02L Package TSLP-2-1 Configuration single, leadless LS(nH) Marking 0.4 RS Maximum Ratings at TA = 25°C, unless otherwise specified Parameter Symbol Diode reverse voltage VR 80 Forward current IF 100 mA Total power dissipation Ptot 250 mW Junction temperature Tj 150 °C Operating temperature range Top -55 ... 125 Storage temperature Tstg -55 ... 150 Value Unit V Ts 133°C Thermal Resistance Parameter Symbol Junction - soldering point1) , BAR89-02L RthJS 1For Value Unit 65 K/W calculation of RthJA please refer to Application Note Thermal Resistance 1 Jul-15-2003 BAR89... Electrical Characteristics at TA = 25°C, unless otherwise specified Symbol Values Parameter Unit min. typ. max. 80 - - V - - 50 nA DC Characteristics Breakdown voltage V(BR) I(BR) = 5 µA Reverse current IR VR = 60 V Forward voltage V VF IF = 10 mA - 0.83 0.9 IF = 100 mA - 0.95 1.1 2 Jul-15-2003 BAR89... Electrical Characteristics at TA = 25°C, unless otherwise specified Parameter Symbol Values min. typ. Unit max. AC Characteristics Diode capacitance pF CT VR = 1 V, f = 1 MHz - 0.25 0.35 VR = 0 V, f = 100 MHz - 0.25 - VR = 0 V, f = 1 GHz - 0.19 - VR = 0 V, f = 1.8 GHz - 0.18 - Reverse parallel resistance RP k VR = 0 V, f = 100 MHz - 35 - VR = 0 V, f = 1 GHz - 5 - VR = 0 V, f = 1.8 GHz - 3.5 - Forward resistance rf IF = 1 mA, f = 100 MHz - 3 - IF = 5 mA, f = 100 MHz - 1.2 - IF = 10 mA, f = 100 MHz - 0.8 1.5 rr - 800 - ns I-region width WI - 19 - µm Insertion loss1) |S21|2 Charge carrier life time IF = 10 mA, IR = 6 mA, measured at IR = 3 mA, RL = 100 dB IF = 1 mA, f = 1.8 GHz - -0.23 - IF = 5 mA, f = 1.8 GHz - -0.1 - IF = 10 mA, f = 1.8 GHz - -0.08 - VR = 0 V, f = 0.9 GHz - -19 - VR = 0 V, f = 1.8 GHz - -14 - VR = 0 V, f = 2.45 GHz - -11 - Isolation1) 1BAR89-02L |S21|2 in series configuration, Z = 50 3 Jul-15-2003 BAR89... Diode capacitance CT = (VR ) Reverse parallel resistance RP = (VR ) f = Parameter f = Parameter 10 3 0.5 KOhm pF 10 2 1 MHz 100 MHz 1 GHz 1.8 GHz 0.35 Rp CT 0.4 10 1 0.3 0.25 10 0.2 100 MHz 1 GHz 1.8 GHz 0 0.15 0.1 0 2 4 6 8 10 12 14 V 16 10 -1 0 20 2 4 6 8 10 12 14 16 VR Forward current IF = (VF) f = 100MHz TA = Parameter 3 0 10 A Ohm 10 10 -1 10 -2 2 IF rf 10 -3 10 20 VR Forward resistance rf = (I F) 10 V -40°C +25°C +85°C +125°C 10 -4 1 10 -5 10 -6 10 0 10 -7 10 -8 10 -1 10 -2 10 -1 10 0 10 1 10 2 10 -9 0 mA10 3 IF 0.2 0.4 0.6 0.8 V 1.2 VF 4 Jul-15-2003 BAR89... Forward current IF = (TS ) Permissible Puls Load RthJS = (tp ) BAR89-02L BAR89-02L 10 2 120 mA mA 100 RthJS 90 IF 80 70 10 1 0.5 0.2 0.1 0.05 0.02 0.01 0.005 D=0 60 50 10 0 40 30 20 10 0 0 15 30 45 60 75 90 105 120 °C 10 -1 -6 10 150 10 -5 10 -4 10 -3 10 -2 °C TS 10 0 tp Permissible Pulse Load Insertion loss |S21 |2 = (f) IFmax / IFDC = (tp ) IF = Parameter BAR89-02L in series configuration, Z = 50 BAR89-02L 10 2 0 dB mA 10 |S21| IF -0.1 D=0 0.005 0.01 0.02 0.05 0.1 0.2 0.5 1 -0.15 10mA 5mA 1mA -0.2 -0.25 -0.3 -0.35 10 0 -6 10 10 -5 10 -4 10 -3 10 -2 10 -1 °C 10 -0.4 0 1 tp 1 2 3 4 GHz 6 f 5 Jul-15-2003 BAR89... Isolation |S21 |2 = (f) VR = Parameter BAR89-02L in series configuration, Z = 50 0 |S21| dB -10 -15 0V 1V 10 V -20 -25 -30 0 1 2 3 4 GHz 6 f 6 Jul-15-2003