INFINEON 4N33

4N32/4N33
PHOTODARLINGTON
OPTOCOUPLER
FEATURES
• Very High Current Transfer Ratio, 500% Min.
• High Isolation Resistance, 1011 Ω Typical
• Standard Plastic DIP Package
• Underwriters Lab File #E52744
• V VDE Approvals #0884 (Available with
Option 1)
D E
Dimensions in inches (mm)
Pin One ID.
3
2
1
.248 (6.30)
.256 (6.50)
4
The 4N32 and 4N33 are optically coupled isolators
with a Gallium Arsenide infrared LED and a silicon
photodarlington sensor. Switching can be
achieved while maintaining a high degree of isolation between driving and load circuits. These optocouplers can be used to replace reed and mercury
relays with advantages of long life, high speed
switching and elimination of magnetic fields.
.335 (8.50)
.343 (8.70)
Emitter
Peak Reverse Voltage ........................................3 V
Continuous Forward Current .........................60 mA
Power Dissipation at 25°C..........................100 mW
Derate Linearly from 55°C....................1.33 mW/°C
Detector
Collector-Emitter Breakdown Voltage,
BVCEO .......................................................... 30 V
Emitter-Base Breakdown Voltage,
BVEBO ............................................................. 8V
Collector-Base Breakdown Voltage,
BVCBO .......................................................... 50 V
Emiter-Collector Breakdown Voltage,
BVECO ............................................................ 5 V
Collector (load) Current...............................125 mA
Power Dissipation at 25°C Ambient ...........150 mW
Derate Linearly from 25°C......................2.0 mW/°C
Package
Total Dissipation at 25°C Ambient .............250 mW
Derate Linearly from 25°C......................3.3 mW/°C
Isolation Test Voltage......................... 5300 VACRMS
Between Emitter and Detector,
Standard Climate: 23°C/50%RH,
DIN 50014
Leakage Path ........................................ 7 mm min.
Air Path................................................... 7 mm min.
Isolation Resitance
VIO=500 V/25°C ...................................... ≥1012 Ω
VIO=500 V/100°C .................................... ≥1011 Ω
Storage Temperature ...................–55°C to +150°C
Operating Temperature ...............–55°C to +100°C
Lead Soldering Time at 260°C .................... 10 sec.
6 Base
Cathode 2
DESCRIPTION
Maximum Ratings
Anode 1
5
4 Emitter
NC 3
6
.300 (7.62)
typ.
.039
(1.00)
min.
4°
typ.
5 Collector
.130 (3.30)
.150 (3.81)
18° typ.
.020 (.051) min.
.010 (.25)
.014 (.35)
.031 (0.80)
.035 (0.90)
.018 (0.45)
.022 (0.55)
.110 (2.79)
.150 (3.81)
.300 (7.62)
.347 (8.82)
.100 (2.54) typ.
Electrical Characteristics (TA=25°C)
Parameter
Min.
Typ.
Max.
Unit
Condition
Forward Voltage
1.25
1.5
V
IF=50 mA
Reverse Current
0.1
100
µA
VR=3.0 V
Capacitance
25
pF
VR=0 V
Emitter
Detector
BVCEO*
30
V
IC=100 µA, IF=0
BVCBO*
50
V
IC=100 µA, IF=0
BVEBO*
8
V
IC=100 µA, IF=0
BVECO*
5
V
IE=100 µA, IF=0
nA
VCE=10 V, IF=0
10
ICEO
1.0
HFE
13K
100
IC=0.5 mA
Package
Current Transfer Ratio
500
%
IF=10 mA,
VCE=10 V
IC=2 mA,
IF=8 mA
VCEsat
1.0
V
Coupling Capacitance
1.5
pF
Turn On Time
5
µs
VCC=10 V,
IC=50 mA
Turn Off Time
100
µs
IF=200mA,
RL=180 Ω
*Indicates JEDEC registered values
5–1
Figure 1. Forward voltage versus forward current
Figure 5. Non-saturated and saturated HFE versus
base current
5
1.3
Ta = -55°C
HFE - Forward Transfer Gain
VF - Forward Voltage - V
1.4
1.2
Ta = 25°C
1.1
1.0
0.9
Ta = 100°C
0.8
0.7
.1
1
10
IF - Forward Current - mA
0.8
Vce = 5 V
0.2
Vce =1V
1
10
100
IF - LED Current - mA
1000
Vce = 1V
.01
100
Figure 4. Normalized collector-base photocurrent
versus LED current
NIcb - Normalized Icb
10
80 Ta = 25°C, Vcc = 5V
Vth = 1.5 V
60
1KΩ
220Ω
40
470Ω
20
100Ω
0
0
5
10
15
IF - LED Current - mA
20
1KΩ
15
Ta = 25°C
Vcc = 5 V
Vth = 1.5 V
10
100Ω
5
0
0
5
10
15
IF - LED Current - mA
20
VCC
RL
VO
tD
tR
.001
tPHL
100
VO
tPLH
.01
1
10
IF - LED Current - mA
100
Figure 8. Switching waveform and switching schematic
.1
.1
10
IF
Normalized to:
Ta = 25°C
Vcb = 3.5 V
IF = 10 mA
1
1
20
Vce = 5 V
1
10
IF - LED Current - mA
.1
Figure 7. High to low propagation delay versus
collector load resistance and LED current
.1
.001
.1
0
.01
tpHL - High/Low Propagation
delay - µs
NIce - Normalized Ice
Figure 3. Normalized non-saturated and saturated collector-emitter current versus LED current
10 Normalized to:
Ta = 25°C
IF = 10 mA
1
Vce = 5 V
Vce = 1 V
2000
Figure 6. Low to high propagation delay versus
collector load resistance and LED current
0.4
0.0
.1
4000
Ib - Base Current - µA
Normalized to:
Vce = 5 V
IF = 10 mA
Ta = 25 °C
0.6
Vce = 5 V
6000
tpLH - Low/High Propagation
Delay - µs
NCTRce - Normalized CTRce
1.0
Ta = 25°C
8000
100
Figure 2. Normalized non-saturated and saturated
CTRce versus LED current
1.2
10000
tS
IF
VTH=1.5 V
tF
4N32/33
5–2